Large-sized-mismatched group-V element doped ZnO films fabricated on silicon substrates by pulsed laser deposition

Pulsed laser deposition has been utilized to synthesize impurity-doped ZnO thin films on silicon substrate. Large-sized-mismatched group-V elements (A^V) including P, As, Sb and Bi were used as dopants. Hall effect measurements show that hole concentration in the order of 10¹⁶-10¹⁸ cm⁻³, resistivity in the range of 10-100 Ω cm, Hall mobility in the range of 10-100 cm²/Vs were obtained only for ZnO:As and ZnO:Bi thin films. X-ray diffraction measurements reveal that the films possess polycrystallinity or nanocrystallinity with ZnO (002) preferred orientation. Guided by X-ray photoemission spectroscopy analyses and theoretical calculations for large-sized-mismatched group-V dopant in ZnO, the A_Zn^V-2V_Zn complexes are believed to be the most possible acceptors in the p-type A^V-doped ZnO thin films.     

High efficiency green phosphorescent organic light emitting device with (TCTA/TCTA0.5TPBi0.5/TPBi): Ir(ppy)3 emission layer

A new high efficiency green light emitting phosphorescent device with an emission layer consisting of {4,4',4'-tris(N-carbazolyl)-triphenylamine[TCTA]/TCTA_0.5TPBi_0.5/1,3,5-tris(N-phenylbenzimiazole-2-yl)benzene[TPBi]}:tris(2-phenylpyridine)iridium(III)[Ir(ppy)₃] was fabricated and its electroluminescence characteristics were evaluated in comparison with those of devices with emission layers made of (TCTA_0.5TPBi_0.5):Ir(ppy)₃ and (TCTA/ TPBi):Ir(ppy)₃.The device with the emission layer consisting of (TCTA/TCTA_0.5TPBi_0.5/TPBi):Ir(ppy)₃ showed a luminance of 11,000 cd/m² at an applied voltage of 8 V and maximum current efficiency of 63 cd/A under a luminance of 500 cd/m². The peak wavelength in the electroluminescent spectral and color coordinate on the Commission Internationale de I'Eclairage(CIE) chart were 513 nm and (0.31, 0.62) in this device, respectively. Under a luminance of 10000 cd/m², the current efficiency of this device was 55 cd/A, which is 1.4 and 1.1 times better than those of the devices with the emission layers made of (TCTA_0.5TPBi_0.5):Ir(ppy)₃ and (TCTA/TPBi):Ir(ppy)₃, respectively.     

Effect of oxygen pressure of SiOx buffer layer on the electrical properties of GZO film deposited on PET substrate

The present work was made to investigate the effect of oxygen pressure of SiO_x layer on the electrical properties of Ga-doped ZnO (GZO) films deposited on poly-ethylene telephthalate (PET) substrate by utilizing the pulsed-laser deposition at ambient temperature. For this purpose, the SiO_x buffer layers were deposited at various oxygen pressures ranging from 13.3 to 46.7 Pa. With increasing oxygen pressure during the deposition of SiO_x layer as a buffer, the electrical resistivity of GZO/SiO_x/PET films gradually decreased from 7.6 × 10^− 3 to 6.8 × 10^− 4 Ω·cm, due to the enhanced mobility of GZO films. It was mainly due to the grain size of GZO films related to the roughened surface of the SiO_x buffer layers. In addition, the average optical transmittance of GZO/SiO_x/PET films in a visible regime was estimated to be ~ 90% comparable to that of GZO deposited onto a glass substrate.     

Rib waveguides based on Zn-substituted LiNbO3 films grown by liquid phase epitaxy

The fabrication of epitaxially grown Zn-substituted LiNbO₃ (Zn:LiNbO₃) waveguide films and rib waveguides is reported and detailed investigations about microstructure, morphology and optical waveguide properties are provided. Zn:LiNbO₃ films were grown on congruent X-cut LiNbO₃ substrates by a modified liquid phase epitaxy in solid–liquid coexisting solutions. The homogeneously Zn-substituted films exhibit high crystalline perfection and extremely flat surfaces with averaged surface roughness of rms = 0.2–0.3 nm. At the film/substrate interface a Zn-containing transient layer has been observed, which allows the growth of elastically strained Zn:LiNbO₃ film lattices. X-ray diffraction reciprocal-space measurements prove the pseudomorphic film growth. The refractive index difference between substrate and film depends on the zinc substitution content, which increase with rising growth temperatures. For films with 5.3 mol% Zn (Δn_o ≈ +5 × 10⁻³) only ordinary ray propagation was observed, while for films with 7.5 mol% Zn (Δn_o ≈ +8 × 10⁻³, Δn_e ≈ +5 × 10⁻³) both modes, TM and TE propagate. Stress-induced refractive index changes are in the order of Δn ≈ 10⁻⁴. In rib waveguide microstructures singlemode propagation with nearly symmetrical field distribution has been observed. To demonstrate the potential of the proton exchange-assisted dry-etching technique interferometer microstructures were fabricated.     

Meteorological variations of PM2.5/PM10 concentrations and particle-associated polycyclic aromatic hydrocarbons in the atmospheric environment of Zonguldak, Turkey

Airborne particulate matter (PM_2.5 and PM₁₀) concentrations were measured in Zonguldak, Turkey from January to December 2007, using dichotomous Partisol 2025 sampler. Collected particulate matter was analyzed for 14 selected polycyclic aromatic hydrocarbons (PAHs) by high-performance liquid chromatography with fluorescence detection (HPLC-FL). The seasonal variations of PM_2.5 and PM₁₀ concentrations were investigated together with their relationships with meteorological parameters. The maximum daily concentrations of PM_2.5 and PM₁₀ reached 83.3 μg m⁻³ and 116.7 μg m⁻³ in winter, whereas in summer, they reached 32.4 μg m⁻³ and 66.7 μg m⁻³, respectively. Total concentration of PM₁₀-associated PAHs reached 492.4 ng m⁻³ in winter and 26.0 ng m⁻³ in summer times. The multiple regression analysis was performed to predict total PM_2.5- and PM₁₀-associated PAHs and benzo(a)pyrene-equivalent (BaPE) concentrations with respect to meteorological parameters and particulate mass concentrations with the determination coefficients (R²) of 0.811, 0.805 and 0.778, respectively. The measured mean values of concentrations of total PM_2.5- and PM₁₀-associated PAHs were found to be 88.4 ng m⁻³ and 93.7 ng m⁻³ while their predicted mean values were found to be 92.5 ng m⁻³ and 98.2 ng m⁻³, respectively. In addition, observed and predicted mean concentration values of PM_2.5-BaPE were found to be 14.1 ng m⁻³ and 14.6 ng m⁻³. The close annual mean concentrations of measured and predicted total particulate related PAHs imply that the models can be reliably used for future predictions of particulate related PAHs in urban atmospheres especially where fossil fuels are mainly used for heating.     

Electrical and optical properties of 12CaO·7Al2O3 electride doped indium tin oxide thin film deposited by RF magnetron co-sputtering

12CaO·7Al₂O₃ electride (C12A7:e⁻) doped indium tin oxide (ITO) (ITO:C12A7:e⁻) thin films were fabricated on a glass substrate by an RF magnetron co-sputtering system with increasing number of C12A7:e⁻ chips (from 1 to 7) and at various oxygen partial pressure ratios. The optical transmittance of the ITO:C12A7:e⁻ thin film was higher than 70% in the visible wavelength region. In the electrical properties of the thin film, a decrease of the carrier concentration from 2.6 × 10²⁰ cm^− 3 to 2.1 × 10¹⁸ cm^− 3 and increase of the resistivity from 1.4 × 10^− 3 Ω cm to 4.1 × 10^− 1 Ω cm were observed with increasing number of C12A7:e⁻ chips and oxygen partial pressure ratios. It was also observed that the Hall mobility was decreased from 17.27 cm²·V^− 1·s^− 1 to 5.13 cm²·V^− 1·s^− 1. The work function of the ITO thin film was reduced by doping it with C12A7:e⁻.     

Irradiation induced effects on Ni3N/Si bilayer system

The irradiation effect in Ni₃N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10¹⁴ ions/cm² was investigated at room temperature. Grazing incidence X-ray diffraction determined the formation of Ni₂Si and Si₃N₄ phases at the interface. The roughness of the thin film was measured by atomic force microscopy. X-ray reflectivity was used to measure the thickness of thin films. X-ray photoelectron spectroscopy has provided the elemental binding energy of Ni₃N thin films. It was observed that after irradiation (Ni 2p_3/2) peak shifted towards a lower binding energy. Optical properties of nickel nitride films, which were deposited onto Si (100) by ion beam sputtering at vacuum 1.2 × 10⁻⁴ torr, were examined using Au ions. In-situ I–V measurements on Ni₃N/Si samples were also undertaken at room temperature which showed that there is an increase in current after irradiation.     

Study on Li-ion diffusion in nano-crystalline LiMn2O4 thin film cathode grown by pulsed laser deposition using CV, EIS and PITT techniques

In the present work, LiMn₂O₄ thin films have been prepared by pulsed laser deposition on stainless steel substrates. The films deposited at 400 °C and 200 mTorr of oxygen were mainly composed of nano-crystals less than 100 nm and their agglomerates. Three different electrochemical methods including CV, EIS and PITT were applied to measure the overall Li⁺-ion diffusion coefficients and charge-transfer resistances at various potentials from 3.85 to 4.5 V. The Li⁺ diffusion coefficients were in the range of 10⁻¹² to 10⁻¹⁰ cm² s⁻¹, depending on the potentials. It was found that the charge-transfer resistances decreased with the increase of potentials. Especially, relatively high diffusion coefficients and low charge-transfer resistances were observed above 4.2 V.     

Observation of phosphorescence from fluorescent organic material Bebq2 using phosphorescent sensitizer

Absorption, emission and excitation spectra of bis(10-hydroxybenzo [h] quinolinato)-beryllium (Bebq₂) were studied using polystyrene film doped with 5 wt% Bebq₂, N,N-di(naphthalene-1-yl)-N,N-diphenyl-benzidene (NPB) film doped with 60 wt% Bebq₂, and neat film. The monomer and aggregate of Bebq₂ give fluorescence at 492 and 511 nm at 12 K, respectively. A strong T₁ emission with a vibronic structure was observed from Bebq₂ below 70 K by heavily doping with phosphorescent tris(2-phenylpyridine) iridium [Ir(ppy)₃]. The T₁ energy of Bebq₂ was estimated to be 2.26 eV from the onset of the 573 nm 0–0 vibronic emission band. The energy transfer mechanism from Ir(ppy)₃ to the T₁ state of Bebq₂ is discussed.     

Surface and grain-boundary energies as well as surface mass transport in polycrystalline CeO2

The multiphase equilibration technique for the determination of the equilibrium angles that develop at the interphase boundaries of a solid–liquid–vapor system, has been used to calculate the surface and interfacial energies in polycrystalline CeO₂ and CeO₂/Cu system in argon atmosphere at the temperature range 1473–1773 K. Linear temperature functions were obtained by extrapolation, for the surface energy γ_sv (J/m²) = 2.465–0.563 × 10⁻³ T and the grain-boundary energy γ_ss (J/m²) = 1.687–0.391 × 10⁻³ T of the ceramic, as well as for the interfacial energy γ_sl (J/m²) = 2.623–1.389 × 10⁻³(T −1356 K) of the CeO₂/Cu system. Grain-boundary grooving studied on polished surfaces of CeO₂ annealed in argon atmosphere at the same temperature range has shown that surface diffusion was the dominant mechanism for the mass transport. The surface diffusion coefficient can be expressed according to the equation D_s (m²/s) = 3.82 × 10⁻⁴ exp(−308,250/RT).     

Preparation of double-doped BaCeO3 and its application in the synthesis of ammonia at atmospheric pressure

Perovskite-type oxides BaCe_0.90Sm_0.10O_3−δ (BCS) and BaCe_0.80Gd_0.10Sm_0.10O_3−δ (BCGS) were synthesized by the sol–gel method and characterized by thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Using the sintered samples as solid electrolytes and silver–palladium alloy as electrodes, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in a solid-state proton-conducting cell reactor. The maximum rate of production of ammonia was 5.82×10⁻⁹ mol s⁻¹ cm⁻².     

Growth, thermal and spectroscopic characteristics of LiNd(WO4)2 crystal

Crystal growth, thermal and optical characteristics of LiNd(WO₄)₂ crystal have been investigated. The LiNd(WO₄)₂ crystal up to Ø15 × 32 mm³ has been grown by Czochralski technique. The hardness is about 5.0 Mohs’ scale. The specific heat at 50 °C is 0.42 J g⁻¹ K⁻¹. The thermal expansion coefficient for c- and a- axes is 1.107 × 10⁻⁵ and 2.104 × 10⁻⁵ K⁻¹, respectively. The absorption and fluorescence spectra and the fluorescence decay curve of LiNd(WO₄)₂ crystal were measured at room temperature. Some spectroscopic parameters such as the intensity parameters, the spontaneous transition probabilities, the fluorescence branching ratios, the radiative lifetimes and emission cross sections were estimated.     

Microstructures and thermoelectric properties of p-type pseudo-binary AgxBi0.5Sb1.5−xTe3 (x = 0.05–0.4) alloys prepared by cold pressing

The p-type pseudo-binary Ag_xBi_0.5Sb_1.5−xTe₃ (x = 0.05–0.4) alloys were prepared by cold pressing. The thermal conductivities (κ) were calculated from the values of heat capacities, densities and thermal diffusivities measured, and range approximately from 0.66 to 0.56 (W K^− 1 m^− 1) for the Ag_xBi_0.5Sb_1.5−xTe₃ alloy with molar fraction x being 0.4. Combining with the electrical properties obtained in the previous study, the maximum dimensionless figure of merit ZT of 1.1 was obtained at the temperature of 558 K.     

Tl2Ba2CaCu2O8 thin films on 2 in. LaAlO3(0 0 1) substrates

High quality Tl₂Ba₂CaCu₂O₈ (Tl-2212) superconducting thin films are prepared on both sides of 2 in. LaAlO₃(0 0 1) substrates by off-axis magnetron sputtering and post-annealing process. XRD measurements show that these films possess pure Tl-2212 phase with C-axis perpendicular to the substrate surface. The thickness unhomogeneity of the whole film on the 2 in. wafer is less than 5%. The superconducting transition temperatures T_cs of the films are around 105 K. At zero applied magnetic field, the critical current densities J_cs of the films on both sides of the wafer were measured to be above 2 × 10⁶ A/cm² at 77 K. The microwave surface resistance R_s of film was as low as 350 μΩ at 10 GHz and 77 K. In order to test the suitability of Tl-2212 thin films for passive microwave devices, 3-pole bandpass filters have been fabricated from double-sided Tl-2212 films on LaAlO₃ substrates.     

Growth and optical characterizations of (Ba0.32Sr0.68)5Nb4O15 crystal

(Ba_0.32Sr_0.68)₅Nb₄O₁₅ crystal with sizes of Ø 17 × 35 mm was grown successfully by Czochralski technique method. The thermal anisotropy was discussed. The principal coefficients of thermal expansion along (100), (010), (001) directions were precisely measured to be 1.308 × 10^− 5, 1.288 × 10^− 5, 1.478 × 10^− 5 K^− 1, respectively. Its optical transparency range has been measured and found to span from 323 to 5500 nm. The bands present in the IR spectra were identified and assigned to the corresponding vibration modes of NbO₆ anions.     

Doping-induced microstructural, textural and optical properties of In2Ti1−xVxO5+δ semiconductors and their role in the photocatalytic splitting of water

The physicochemical properties of V-doped indium titanates (In₂Ti_1−xV_xO_5+δ, 0.0 ≤ x ≤ 0.2) were investigated by using XPS, powder XRD, UV–vis, SEM and luminescence spectroscopy techniques. The Rietveld refinement of XRD data revealed that even though the V-containing samples were isostructural with In₂TiO₅ (orthorhombic space group Pnma), a systematic x-dependent variation was noticeable in the Ti–O bond lengths in [TiO₆] octahedral units, cell parameters and in the value of δ. XPS results confirmed the coexistence of V⁵⁺ and V⁴⁺ states, leading thereby to an enhancement in oxygen non-stoichiometry in the doped samples. A loading-dependent progressive shift from 400 to 750 nm was also observed in the onset of the absorption edge, indicating a significant narrowing of the band gap. Furthermore, the samples with higher V-content were comprised of the grain clusters having larger size and an irregular shape. The UV–vis, photoluminescence and thermoluminescence studies indicate that the doping-induced lattice defects may give rise to certain closely spaced acceptor/donor energy levels in between the band gap of host matrix. The indium titanates are found to serve as stable photocatalysts for water splitting under visible light, where oxygen was the major reaction product. The role of microstructural and morphological properties in the photocatalytic activity is discussed.     

Ca4REO(BO3)3 crystals for green and blue microchip laser generation: from crystal growth to laser and nonlinear optical properties

We have taken advantage of congruent melting behavior of the nonlinear rare-earth oxoborate Ca₄REO(BO₃)₃ family to perfect a process of collective fabrication of self-frequency doubling microchip laser based on Nd:GdCOB (Ca₄Gd_1−xNd_xO(BO₃)₃) crystals. The process goes from Czochralski boule to 1 × 3 mm² chips perfectly oriented (better than 0.1°) to the phase matching direction (θ=90°, φ=46°) in the XY principal plane, with dielectric mirrors directly deposited on both faces of the chips. 20 mW of self-frequency doubling output power at 530 nm was performed under 800 mW of diode laser as incident pump power at 812 nm. In addition, new compositions from the solid solution Ca₄Gd_1−xY_xO(BO₃)₃ (Gd_1−xY_xCOB) (x=0.13, 0.16, 0.44) have been grown by the Czochralski pulling method, in order to achieve noncritical phase matching (NCPM) second harmonic generation of ⁴F_3/2 → ⁴I_9/2 Nd³⁺ doped laser hosts. Three types of laser wavelengths have been chosen: Nd:YAP (YAlO₃) at 930 nm, Nd:YAG (Y₃Al₅O₁₂) at 946 nm, and Nd:ASL (Nd_ySr_1−x La_x−yMg_x Al_12−xO₁₉) at 900 nm. Angular acceptance measurements of these three types of compositions present very large values, compared to pure GdCOB or YCOB oriented in critical phase matching configurations.     

Heteroleptic tris-cyclometalated iridium(III) complexes with phenylpridine and diphenylquinoline derivative ligands

The synthesis and photophysical study of efficient phosphorescent heteroleptic tris-cyclometalated iridium(III) complexes having two different (C^N) ligands are reported. In order to improve the luminescence efficiency by avoiding triplet-triplet (T-T) annihilation, new heteroleptic tris-cyclometalated iridium complexes, Ir(ppy)₂(dpq), Ir(ppy)₂(dpq-3-F) and Ir(ppy)₂(dpq-CF₃), are designed and prepared where ppy, dpq, dpq-3-F and dpq-CF₃ represent 2-phenylpyridine, 2,4-diphenylquinoline, 2-(3-fluorophenyl)-4-phenylquinoline, and 4-phenyl-2-(4-(trifluoromethyl)phenyl)quinoline, respectively. Ppy ligands and dpq derivatives can act as a source of energy supply. When new heteroleptic tris-cyclometalated iridium complex, Ir(ppy)₂(dpq-3-F) is placed in the lowest excited state, the excitation energy is neither quenched nor deactivated but quickly intermolecularly transferred from two ppy ligands to one luminescent dpq-3-F ligand. Such transfer can occur because the triplet energy level of Ir(ppy)₃ is higher than that of Ir(dpq-3-F)₃ and because Ir(dpq-3-F)₃ was known to have a shorter lifetime than that of Ir(ppy)₃. As a result, Ir(ppy)₂(dpq-3-F) shows strong emission band at 620 nm from dpq-3-F ligand in the end. Thus it allows more reddish luminescent color and improves the luminescence by the decrease of quenching or energy deactivation by decreasing the number of the luminescent ligand. To analyze luminescent mechanism, we calculated these complexes theoretically by using computational method.     

Chemical deposition of Al2O3 thin films on Si substrates

Uniform Al₂O₃ films were deposited on silicon substrates by the sol–gel process from stable coating solutions. The technological procedure includes spin coating deposition and investigating the influence of the annealing temperature on the dielectric properties. The layers were studied by Fourier transform infrared spectroscopy and Scanning Electron Spectroscopy. The electrical measurements have been carried out on metal–insulator–semiconductor (MIS) structures. The C–V curves show a negative fixed charge at the interface and density of the interface state, Dit, 3.7 × 10¹¹ eV^− 1cm^− 2 for annealing temperature at 750 °C.     

Efficient blue-green organic light-emitting diodes based on heteroleptic tris-cyclometalated iridium(III) complexes

The blue-green organic light-emitting diodes based on heteroleptic tris-cyclometalated iridium(III) complexes containing the F₂-ppy (2,4-difluorophenylpyridine) and ppy (2-phenylpyridine) ligands were fabricated. Ir(ppy)₃ has been known to have a high phosphorescence efficiency in electroluminescence owing to its strong metal-to-ligand-charge transfer (MLCT) excited state, whereas the luminous efficiency of Ir(F₂-ppy)₃ was found to be low due to weak MLCT. Herein, we report two heteroleptic phosphorescent blue-green emitters, Ir(ppy)₂(F₂-ppy) and Ir(ppy)(F₂-ppy)₂, that exhibit emission peaks at 502 nm and 495 nm, respectively. The maximum luminous efficiencies of the devices with Ir(ppy)₂(F₂-ppy) and Ir(ppy)(F₂-ppy)₂ were 8.93 cd/A and 13.80 cd/A, respectively. The quantum efficiency of the device containing Ir(ppy)(F₂-ppy)₂ was 3.63% at J = 10 mA/cm².