Low power CW optical limiting properties of bis(2-aminopyridinium)-succinate-succinic acid (2APS) single crystal

The increase in the usage of low power CW lasers in various applications needs for the design of optical limiters with low thresholds. The optical limiting properties and nonlinear refractive index (n₂ = −2.4189 × 10⁻⁸ cm²/W) of transparent organic crystal bis(2-aminopyridinium)-succinate-succinic acid (2APS) single crystal using continuous wave He-Ne laser excitation following Z-scan method have been evaluated. The sample exhibited negative (defocusing) nonlinearity. This thermally induced defocusing nature of 2APS crystal can be used to design the low power optical limiters. As the origin for this nonlinearity is thermal, a complete thermal transport properties such as thermal diffusivity (α_s = 5.97 ± 0.03 × 10⁻³ cm²/s), thermal effusivity (e_s = 1.94 ± 0.02 × 10⁻² J/cm²-K-s^1/2), thermal conductivity (k_s = (4. 66 ± 0.04) × 10⁻³ W/cm-K)) and specific heat capacity (C_ps = (5.61 ± 0.05) × 10⁻¹ J/g-K) of the material were studied following the photopyro electric (PPE) technique.     

Microhardness studies on calcium hydrogen phosphate (brushite) crystals

Vicker's and Knoop microhardness studies were carried out on grown calcium hydrogen phosphate dihydrate (CaHPO₄·2H₂O) crystals over a load range of 10-50 g. The Vickers (H_V) and Knoop (H_K) microhardness numbers for the above loads were found to be in the range of 94-170 kg/mm² and 28-35 kg/mm² respectively. It was also found that these numbers increased with increase in load. The Mayer's index (n) was found to be greater than 1.6 showing soft-material characteristics. The fracture toughness values (K_c), determined from measurements of crack length, were estimated to be 6 ± 0.5 × 10³ kg m^−3/2 and 4.5 ± 0.5 × 10³ kg m^−3/2 at 25 g and 50 g respectively. The brittleness indices (B_i) were found as 2.3 ± 0.1 × 10⁴ m^−1/2 for 25 g and 3.7 ± 0.1 × 10⁴ m^−1/2 for 50 g. Using Wooster's empirical relation, the elastic stiffness coefficient (c₁₁) has been calculated from Vicker's hardness values as 4.8 ± 0.5 × 10¹⁵ Pa for 10 g, 9.7 ± 0.5 × 10¹⁵ Pa for 25 g and 13.3 ± 0.5 × 10¹⁵ Pa for 50 g. The Young's modulus was calculated as 1.5 ± 0.1 × 10¹⁰ N m⁻² from Knoop microhardness values.     

Kapitza resistance and thermal conductivity of Mylar at superfluid helium temperature

The Kapitza resistance and the thermal conductivity of type A Mylar sheets in the temperature range between 1.4 and 2.1 K have been determined. Four sheets with varying thickness from 37 μm to 255 μm, have been tested in steady-state condition. For a small temperature difference (10-30 mK) and heat flux density smaller than 30 Wm⁻², the total thermal resistance of the sheet is determined as a function of sheet thickness and bath temperature. The Kapitza resistance is given by R_K = (1.28 ± 0.08)T⁻³ × 10⁻³ Km² W⁻¹, and the thermal conductivity, κ = [(8.83 ± 0.75) + (11.73 ± 0.43) × T] × 10⁻³ Wm⁻¹ K⁻¹.     

Novel MoO3 and WO3 hollow nanospheres assembled with polymeric micelles

Novel β-MoO₃ and WO₃ hollow nanospheres were synthesized using a soft template of polymeric micelle with core-shell-corona architecture. Poly(styrene-b-[3-(methacryloylamino)propyl] trimethylammonium chloride-b-ethylene oxide) micelles (PS-PMAPTAC-PEO) with cationic shell block effectively produce core/shell composite particles through electrostatic interaction with anionic precursors WO₄²⁻ and MoO₄²⁻. Transmission electron microscope (TEM) images of β-MoO₃ and WO₃ have confirmed the hollow structure with average outer diameter of 42 ± 2 and 46 ± 2 nm, respectively; the hollow cavity diameters were found to be 16  ± 1 nm and 14 ± 1 nm for β-MoO₃ and WO₃, respectively. The combination of nitrogen adsorption/desorption analyses and TEM observation confirmed the presence of disordered mesopores in the shell domain of β-MoO₃ and WO₃ hollow particles.     

Surface morphology and growth mechanisms for sputtered amorphous silicon nitride thin films

Evolution of surface of sputter-deposited amorphous Si₃N₄ films growth on Si (100) substrates was investigated using atomic force microscopy (AFM). The scaling behaviors of the AFM topographical profiles were analyzed using the one-dimensional power spectral density. The results of root-mean-square surface height variation showed that there is a power law relationship between the surface roughness and deposition time. It is interesting to note that the growth exponent can be divided into one region and two regions, respectively, when Si₃N₄ films are deposited at different working pressures. A very low growth exponent of β = 0.07 ± 0.01 was found when Si₃N₄ films were deposited at a working pressure of 1.6 × 10^− 1 Pa. However, the growth exponent β can be divided into two regions, which is β₁ = 0.09 ± 0.01, β₂ = 0.24 ± 0.03 and β₁ = 0.09 ± 0.01, β₂ = 0.33 ± 0.04, when the films were deposited at a working pressure of 2.1 × 10^− 1 Pa and 2.7 × 10^− 1 Pa, respectively. The mechanisms of anomalous dynamic scaling exponents of Si₃N₄ films deposited at different working pressures were discussed.     

Very-low temperature specific heat of Torlon

The specific heat of Torlon has been measured in the 0.15-4.2 K temperature range. Data below 1 K can be represented by c(T) = P₁T^1+δ + P₂T³, with P₁ = (5.41 ± 0.08)·10⁻⁶J K^−(2+δ) g⁻¹, P₂ = (2.82 ± 0.03) ·10⁻⁵JK⁻⁴g⁻¹ and δ = 0.28 ± 0.01, as predicted by the tunnelling theory. Above 1 K, the behaviour of c(T) is similar to that of other amorphous materials and can be expressed as: c(T) = P · T^Ω with P = (2.68 ± 0.07)·10⁻⁵JK^Ω+1g⁻¹ and Ω = 3.32 ± 0.02.     

Synthesis and ferromagnetic property of new binary copper iron pyrophosphate CuFeP2O7

The pyrophosphate of CuFeP₂O₇ was synthesized through one step-thermal synthesis at 500 °C using the mixing of copper carbonate, iron metals and phosphoric acid. FTIR and XRD results indicate the dominant feature of pyrophosphate (P₂O₇⁴⁻) anion and a pure monoclinic phase with space group C_2h⁶ (Z = 4), respectively. The crystallite size of 25 ± 9 nm for the CuFeP₂O₇ was estimated by X-ray line broadening. Room temperature magnetization result shows ferromagnetic behavior of the CuFeP₂O₇ powder, having hysteresis loop in the range of ± 10,000 Oe with the specific magnetization value of 1.57 emu g^− 1. This property is important for specific application and is presented for the first time.     

An investigation on palladium sulphide (PdS) thin films as a photovoltaic material

Polycrystalline PdS thin films with tetragonal structure have been grown by direct sulphuration of Pd layers. They are formed by crystallites of size ∼ 50 nm. As-grown PdS films show a Seebeck coefficient, S = − 250 ± 30 μV/K, which indicates an n-type conductivity. Electrical resistivity of the samples, measured by the four contact probe, is (6.0 ± 0.6) × 10^− 2 Ω·cm. Hall effect measurements, confirms n-type conductivity with a negative carrier density n = (8.0 ± 2.0) × 10¹⁸ cm^− 3 and electron mobility μ of (20 ± 2) cm²/V s. Band gap energy (E_g) and absorption coefficient (α) are determined from the optical transmission and reflectance of the films. A direct transition with energy gap E_g = (1.60 ± 0.01) eV is obtained. Optical absorption coefficient in the range of photon energies hν > 2.0 eV is higher than 10⁵ cm^− 1. All these properties make PdS thin films a good alternative material for solar applications.     

The origin of electrical property deterioration with increasing Mg concentration in ZnMgO:Ga

Transparent conductive Ga-doped Zn_1 − xMg_xO (ZnMgO:Ga) films were epitaxially grown via Pulsed Laser Deposition on sapphire by optimizing the substrate temperature and other parameters of deposition. Zn_0.68Mg_0.31Ga_0.01O/sapphire films deposited at 400 °C have a Hall mobility (μ) of 9.2 ± 0.5 cm² V^− 1 s^− 1 and a free electron density (n) of 1.79 × 10²⁰ ± 0.06 × 10²⁰ cm^− 3, yielding an electrical conductivity (σ) = 262 ± 22 S/cm. Zn_0.90Mg_0.09Ga_0.01O/sapphire films, deposited under the same growth conditions, have similar crystalline quality, but significantly better electrical properties (σ = 1450 ± 10 S/cm, μ = 24.5 ± 2.5 cm² V^− 1 s^− 1, n = 3.81 × 10²⁰ ± 0.20 × 10²⁰ cm^− 3). This comparison provides evidence of electrical property deterioration in doped ZnMgO bulk material with increasing Mg content, independent of crystalline quality. Electrical properties of ZnMgO:Ga are further deteriorated by the decrease of the crystalline quality. Polycrystalline Zn_0.90Mg_0.09Ga_0.01O/a-SiO₂ samples deposited under identical conditions on amorphous silica substrates had both inferior crystal quality and inferior transport properties (μ = 2.5 ± 0.2 cm² V^− 1 s^− 1, n = 2.04 × 10²⁰ ± 0.20 × 10²⁰ cm^− 3, σ = 80 ± 8 S/cm) compared to their epitaxial counterparts. Overall, the results of this study indicate that both bulk material properties and crystalline quality influence the electrical properties of single-phase ZnMgO:Ga thin films.     

Perchlorate removal in Fe0/H2O systems: Impact of oxygen availability and UV radiation

In this study, the removal of perchlorate (0.016 mM ) using Fe⁰-only (325 mesh, 10 g L⁻¹) and Fe⁰ (10 g L⁻¹) with UV (254 nm) reactions were investigated under oxic and anoxic conditions (nitrogen purging). Under anoxic conditions, only 2% and 5.6% of perchlorate was removed in Fe⁰-only and Fe⁰/UV reactions, respectively, in a 12 h period. However, under oxic conditions, perchlorate was removed completely in the Fe⁰-only reaction, and reduced by 40% in the Fe⁰/UV reaction, within 9 h. The pseudo-first-order rate constant (k₁) was 1.63 × 10⁻³ h⁻¹ in Fe⁰-only and 4.94 × 10⁻³ h⁻¹ in Fe⁰/UV reaction under anoxic conditions. Under oxic conditions, k₁ was 776.9 × 10⁻³ h⁻¹ in Fe⁰-only reaction and 35.1 × 10⁻³ h⁻¹ in the Fe⁰/UV reaction, respectively. The chlorine in perchlorate was recovered as chloride ion in Fe⁰-only and Fe⁰/UV reactions, but lower recovery of chloride under oxic conditions might due to the adsorption/co-precipitation of chloride ion with the iron oxides. The removal of perchlorate in Fe⁰/UV reaction under oxic conditions increased in the presence of methanol (73%, 9 h), a radical scavenger, indicating that OH radical can inhibit the removal of perchlorate. The removal of perchlorate by Fe⁰-only reaction under oxic condition was highest at neutral pH. Application of the Langmuir-Hinshelwood model indicated that removal of perchlorate was accelerated by adsorption/co-precipitation reactions onto iron oxides and subsequent removal of perchlorate during further oxidation of Fe⁰. The results imply that oxic conditions are essential for more efficient removal of perchlorate in Fe⁰/H₂O system.     

Poly(acrylamide) functionalized chitosan: An efficient adsorbent for azo dyes from aqueous solutions

In the present communication we report on the optimization of persulfate/ascorbic acid initiated synthesis of chitosan-graft-poly(acrylamide) (Ch-g-PAM) and its application in the removal of azo dyes. The optimum yield of the copolymer was obtained using 16 × 10⁻² M acrylamide, 3.0 × 10⁻² M ascorbic acid, 2.4 × 10⁻³ M K₂S₂O₈ and 0.1 g chitosan in 25 mL of 5% aqueous formic acid at 45 ± 0.2 °C. Ch-g-PAM remained water insoluble even under highly acidic conditions and could efficiently remove Remazol violet and Procion yellow dyes from the aqueous solutions over a pH range of 3–8 in contrast to chitosan (Ch) which showed pH dependent adsorption. The adsorption data of the Ch-g-PAM and Ch for both the dyes were modeled by Langmuir and Freundlich isotherms where the data fitted better to Langmuir isotherms. To understand the adsorption behavior of Ch-g-PAM, adsorption of Remazol violet on to the copolymer was optimized and the kinetic and thermodynamic studies were carried out taking Ch as reference. Both Ch-g-PAM and Ch followed pseudo-second-order adsorption kinetics. The thermodynamic study revealed a positive heat of adsorption (ΔH°), a positive ΔS° and a negative ΔG°, indicating spontaneous and endothermic nature of the adsorption of RV dye on to the Ch-g-PAM. The Ch-g-PAM was found to be very efficient in removing color from real industrial wastewater as well, though the interfering ions present in the wastewater slightly hindered its adsorption capacity. The data from regeneration efficiencies for ten cycles evidenced the high reusability of the copolymer in the treatment of waste water laden with even high concentrations of dye.     

Synthesis and nano-field-effect transistors of p-type Zn0.3Cd0.7Te nanoribbons

Ternarysemiconductor Zn_0.3Cd_0.7Te nanoribbons are, firstly, synthesized via a two-step process, and the structure characterizations reveal that the as-synthesized nanoribbons are single-crystalline with a zinc blende structure and a crystal growth direction of [1-10]. Nano-field-effect transistors are fabricated based on single nanoribbon, and the electron transport characteristics demonstrate that the Zn_0.3Cd_0.7Te ribbons have p-type conductivity with a mobility (μ_h) of 5.7 cm²V⁻¹S⁻¹ and carrier concentration (n_h) about 1.1 × 10¹⁷ cm⁻³. The prepared nanoribbons with significant p-type conductivity will be a very attractive candidate for nanoelectronic devices.     

Synthesis and characteristics of the C12A7-O nanoparticles by citric acid sol-gel combustion method

In this study, the O⁻-containing nanocrystal 12CaO·7Al₂O₃ (C12A7-O⁻) was synthesized by the citric acid sol-gel combustion method. The formation of the C12A7-O⁻ material was investigated via X-ray diffraction, thermogravimetric analysis, differential thermal analysis, electron paramagnetic resonance, field emission-scanning electron microscopy, and time of flight mass spectroscopy. The C12A7-O⁻ material was formed at a lower synthesis temperature (900-1150 °C), with a narrower particle size (33-74 nm). The anionic species stored in the C12A7 material was dominated by the active atomic oxygen anions (O⁻) with a concentration of (1.2 ± 0.3) × 10²⁰ cm^− 3, and the emission current density of O⁻ was about 0.89 ± 0.15 μA/cm² at T_{(sample surface)} = 800 °C and E_{(extraction field)} = 800 V/cm.     

Acceptor doping of Ln2Ti2O7 (Ln = Dy, Ho, Yb) pyrochlores with divalent cations (Mg, Ca, Sr, Zn)

New LANTIOX high-temperature conductors with the pyrochlore structure, (Ln_1−xA_x)₂Ti₂O_7−δ (Ln = Dy, Ho, Yb; A = Ca, Mg, Zn; x = 0, 0.01, 0.02, 0.04, 0.07, 0.1), have been prepared at 1400-1600 °C using mechanical activation, co-precipitation and solid-state reactions. Acceptor doping in the lanthanide sublattice of Ln₂Ti₂O₇ (Ln = Dy, Ho, Yb) with Ca²⁺, Mg²⁺ and Zn²⁺ increases the conductivity of the titanates except in the (Ho_1−xCa_x)₂Ti₂O_7−δ system, where the conductivity decreases slightly at low doping levels, x = 0.01-0.02. The highest conductivity in the (Ln_1−xA_x)₂Ti₂O_7−δ (Ln = Dy, Ho, Yb; A = Ca, Mg, Zn) systems is offered by the (Ln_0.9A_0.1)₂Ti₂O_7−δ and attains maximum value for (Yb_0.9Ca_0.1)₂Ti₂O_6.9 and (Yb_0.9Mg_0.1)₂Ti₂O_6.9 solid solutions:∼2 × 10⁻² and 9 × 10⁻³ S cm⁻¹ at 750 °C, respectively. Ca and Mg are best dopants for Ln₂Ti₂O₇ (Ln = Dy, Ho, Yb) pyrochlores. Using impedance spectroscopy data, we have determined the activation energies for bulk and grain-boundary conduction in most of the (Ln_1−xA_x)₂Ti₂O_7−δ (Ln = Dy, Ho; A = Ca, Mg, Zn) materials. The values obtained, 0.7-1.05 and 1-1.4 eV, respectively, are typical of oxygen ion conductors. We have also evaluated defect formation energies in the systems studied.     

Pseudo spin-valves with different spacer thickness as sensing elements of mechanical strain

Giant magnetoresistance (GMR) effect in cobalt based pseudo spin-valves (SV) is combined with the inverse magnetostriction in sensors of mechanical strain. SV with Co/Au/Co core structure were deposited onto the flexible 125 μm thick polyimide substrates. The influence of magnetostriction on GMR was studied in bending current-in-plane configuration. Total relative strain was between −8.6 × 10⁻³ (compression) and 8.6 × 10⁻³ (tension). SV were designed with respect to the oscillating nature of exchange coupling force vs. spacer thickness. The period of oscillations is not changing under the applied stress in our experimental configuration. From the magnetoresistance ratio vs. strain dependences it follows that the output signal of the strained sensor vs. unloaded one could be improved by a proper choice of the spacer thickness t_s. If t_s = 4 nm the relative output is 36% and for t_s = 2.4 nm it is 34%, however, in this case only in the half range of the strain between 0 and ±8.6 × 10⁻³. For t_s = 2.2 nm the relative output is only 10%.     

Enhancement of photocatalytic H2 evolution on hexagonal CdS by a simple calcination method under visible light irradiation

An easy-handling calcination method has been used to eliminate the trap energy levels of hexagonal cadmium sulfide (CdS). The treated CdS exhibited extremely high photocatalytic activity for H₂ production under visible light irradiation. The rate of photocatalytic H₂ evolution has been dramatically enhanced by 55.8 times to 118 μmol h⁻¹ and further improved by 6.3 times to 749 μmol h⁻¹ after loading with 0.2 wt% Pt co-catalyst.     

Catalytic oxidation of carbon monoxide over radiolytically prepared Pt nanoparticles supported on glass

Platinum nanoparticles have been prepared by radiolytic and chemical methods in the presence of stabilizer gelatin and SiO₂ nanoparticles. The formation of Pt nanoparticles was confirmed using UV-vis absorption spectroscopy and transmission electron microscopy (TEM). The prepared particles were coated on the inner walls of the tubular pyrex reactor and tested for their catalytic activity for oxidation of CO. It was observed that Pt nanoparticles prepared in the presence of a stabilizer (gelatin) showed a higher tendency to adhere to the inner walls of the pyrex reactor as compared to that prepared in the presence of silica nanoparticles. The catalyst was found to be active at ≥150 °C giving CO₂. Chemically reduced Pt nanoparticles stabilized on silica nanoparticles gave ∼7% CO conversion per hour. However, radiolytically prepared Pt nanoparticles stabilized by gelatin gave ∼10% conversion per hour. Catalytic activity of radiolytically prepared platinum catalyst, coated on the inner walls of the reactor, was evaluated as a function of CO concentration and reaction temperature. The rate of reaction increased with increase in reaction temperature and the activation energy for the reaction was found to be ∼108.8 kJ mol⁻¹. The rate of CO₂ formation was almost constant (∼1.5 × 10⁻⁴ mol dm⁻³ h⁻¹) at constant O₂ concentration (6.5 × 10⁻³ mol dm⁻³) with increase in CO concentration from 2 × 10⁻⁴ mol dm⁻³ to 3.25 × 10⁻³ mol dm⁻³. The data indicate that catalytic oxidation of CO takes place by Eley-Rideal mechanism.     

Cermet-type hydrogen separation membrane obtained from fine particles of high temperature proton-conductive oxide and palladium

A mixed ionic and electronic conducting hydrogen separation membrane, which consisted of proton-conductive oxide and metallic palladium, was fabricated. A porous alumina tube was employed as a support, and proton-conductive oxide particles were introduced into a microporous top layer of the support by an impregnation method. Palladium particles were deposited into the same porous layer by chemical vapor deposition. Hydrogen permeated preferentially via the membrane thus obtained with a hydrogen permeance (PH₂) of 1.2 × 10^− 9 mol·m^− 2·s^− 1·Pa^− 1 at 873 K. Selectivity for hydrogen (PH₂/PN₂) increased with the operating temperature due to an increase in proton conductivity of the membrane, and PH₂/PN₂ = 5.7 was attained at 873 K.     

Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistors

The effect of low-temperature (200 °C) annealing on the threshold voltage, carrier density, and interface defect density of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) is reported. Transmission electron microscopy and x-ray diffraction analysis show that the amorphous structure is retained after 1 h at 200 °C. The TFTs fabricated from as-deposited IZO operate in the depletion mode with on-off ratio of > 10⁶, sub-threshold slope (S) of ~ 1.5 V/decade, field effect mobility (μ_FE) of 18 ± 1.6 cm²/Vs, and threshold voltage (V_Th) of − 3 ± 0.7 V. Low-temperature annealing at 200 °C in air improves the on-current, decreases the sub-threshold slope (1.56 vs. 1.18 V/decade), and increases the field effect mobility (μ_FE) from 18.2 to 23.3 cm²/Vs but also results in a V_Th shift of − 15 ± 1.1 V. The carrier density in the channel of the as-deposited (4.3 × 10¹⁶ /cm³) and annealed at 200 °C (8.1 × 10¹⁷ /cm³) devices were estimated from test-TFT structures using the transmission line measurement methods to find channel resistivity at zero gate voltage and the TFT structures to estimate carrier mobility.     

Growth and properties of Ca0.28Ba0.72Nb2O6 single crystals

Calcium barium niobate Ca_0.28Ba_0.72Nb₂O₆ (CBN-28) crystals were successfully grown by the Czochralski method. X-ray powder diffraction experiments indicated that CBN single crystals are tetragonal with a = 12.432(±0.002) Å and c = 3.957(±0.001) Å, which have almost the same structure as the Sr_0.50Ba_0.50Nb₂O₆ (SBN-50) crystal. The thermal expansion coefficient perpendicular to Z-direction had been measured to be 1.25 × 10⁻⁵ K⁻¹ between 293.15 and 572.15 K, and along Z-axis was negative between 298.15 and 543.15 K. The specific heat of the crystal had been measured by the differential scanning calorimetric experiments. The transmittance spectra from 200 to 3200 nm were also measured. The measured temperature dependence of dielectric constants showed that the Curie temperature of the CBN-28 crystals is 260 °C, which is about 200 °C higher than that of the (SBN) crystal.