硅含量对真空熔炼电阻靶材和电阻薄膜性能的影响

采用真空熔炼方法研制新型溅射用高阻靶材,并试验靶材含硅量对溅射电阻薄膜性能的影响。     

薄膜电阻加热器的高精度温控

文中介绍了用掺锡的氧化铟导电膜作为加热方式并采和比例积分微分方式通过A／D卡输出电平控制加热电压，实现高精度温控，重点是针对小热容加热体的特点采用相应的措施通过比例积分微分控制实现精确控温。初步研制成了高发射率、可持续工作并能实现精确控温的高精度薄膜电阻加热板。     

BaRuO3电阻薄膜制备技术

ＭＲｕＯ３系电阻薄膜是高热稳定的电阻薄膜材料。本文介绍用高频反应溅射制备ＢａＲｕＯ３电阻薄膜技术。并用电镜、ｘ－射线衍射仪、多功能电子能谱仪观察测得ＢａＲａＯ３薄膜的形貌、晶体结种、组成。结果表明：高频反应溅射制备的ＢａＲｕＯ３薄膜为六方结构（１１０）取向的多晶薄膜，由高低温下的电阻测定表明，该膜质有稳定的电阻温度系数和高温热稳定性能，是理想的发热电阻材料。     

CrSi薄膜电阻温度系数研究

对可能影响CrSi（铬硅）薄膜电阻温度系数（TCR）的工艺参数进行研究分析,通过有针对性的多组试验,优化了工艺奈件,使电阻温度系数从±50ppm／℃降到了±20ppm／℃。     

薄膜电阻网络及数模转换器

本文介绍了采用薄膜制造技术生产的电阻网络及数模转换器，指出了电阻网络是数模转换器的关键元件，国内外部份数模转换器的特性，以及应用及发展潜力。     

光电子薄膜的进展

由于光电子器件的迅速发展,对光电子器件应用的薄膜提出了很高的要求。本文简要地论述了光电子薄膜制备技术的重要进展,同时扼要地介绍了本实验室在这方面所开展的初步工作。     

High-Throughput Screening Thickness-Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse

The functionalities and applications of oxide thin films are highly dependent on their thickness. Most thickness-dependent studies on oxide thin films require the preparation of independent samples, which is labor-intensive and time-consuming and inevitably introduces experimental errors. To address this challenge, a general strategy based on high-throughput pulsed laser deposition technology is proposed to precisely control the thin-film thickness in local regions under similar growth conditions. The as-proposed synthesis strategy is demonstrated using typical complex oxide materials of SrTiO₃ (STO). Consequently, high-throughput STO thin films with nine gradient thicknesses ranging from 10.1 to 30.5 nm are fabricated. Notably, a transition from the unipolar to the bipolar resistive switching mode is observed with increasing STO thickness. Moreover, a physical mechanism based on the heterostructure-mediated redistribution of oxygen vacancies is employed to interpret the transition between the two memristive patterns. The screening of STO thin films with different resistive switching behaviors revealed that the STO thin film with a thickness of 20.3 nm exhibit excellent conductance modulation properties under the application of electrical pulses as well as significant reliability for the emulation of various synaptic functions, rendering it a promising material for artificial neuromorphic computing applications.     

In Situ Formation of Dendrites in Eumelanin Thin Films between Gold Electrodes

Eumelanin is a ubiquitous pigment in the human body, animals, and plants, with potential for bioelectronic applications because of its unique set of physical and chemical properties, including strong UV‐vis absorption, mixed ionic/electronic conduction, free radical scavenging and anti‐oxidant properties. Herein, a detailed investigation is reported of eumelanin thin films grown on substrates patterned with gold electrodes as a model system for device integration, using electrical measurements, atomic force microscopy, scanning electron microscopy, fluorescence microscopy, and time‐of‐flight secondary ion mass spectroscopy. Under prolonged electrical biasing in humid air, one can observe gold dissolution and formation of gold‐eumelanin nanoaggregates, the assembly of which leads to the formation of dendrites forming conductive pathways between the electrodes. Based on results collected with eumelanins from different sources, a mechanism is proposed for the formation of the nanoaggregates and dendrites, taking into account the metal binding properties of eumelanin. The surprising interaction between eumelanin and gold points to new opportunities for the fabrication of eumelanin‐gold nanostructures and biocompatible memory devices and should be taken into account in the design of devices based on eumelanin thin films.     

功能薄膜在薄膜电致发光显示技术中的应用

薄膜电致发光(thin film electroluminescence,简称TFEL或EL)显示器件,具有全固化、主动发光、重量轻、视角大、反应速度快、使用温度范围广等诸多优点,有着广泛的应用前景。TFEL器件的结构中包括了多种功能薄膜的应用,器件性能的好坏决定于各种功能薄膜的合理选择及其制备工艺。本文对TFEL器件中的功能薄膜进行了介绍。     

Resistive Switching Characteristics of Al2O3/ZnO Bilayer Thin Films for Flexible Memory Applications

Unipolar resistive switching behaviors of the ZnO and Al2O3/ZnO films fabricated on flexible substrates by pulse laser deposition were studied in this paper. The films were deposited at room temperature without post-annealing treatment during the process. X-ray diffraction results indicated that ZnO film has a dominant peak at (002). Scanning electron microscopy observation showed a columnar grain structure of the ZnO film to the substrate. The bilayer device of Al2O3/ZnO films had stable resistive switching behaviors with a good endurance performance of more than 200 cycles, high resistive switching ratio of over 103 at a read voltage of 0.1 V, which is better than that of the single oxide layer device of ZnO film. A possible resistive switching filamentary mode was demonstrated in this paper. The conduction mechanisms of high and low resistance states can be explained by space charge limited conduction and Ohmics behaviors. The endurance of the bilayer (BL) device was not degraded upon bending cycles, which indicates the potential of the flexible resistive switching random access memory applications.     

氮化镓薄膜的研究进展

主要讨论了Ⅲ—Ⅴ族化合物半导体材料氮化镓(GaN)薄膜的制备工艺、掺杂、衬底和缓冲层等相关问题，并提出了目前GaN研究中所面临的主要问题以及氮化镓材料的应用前景。     

薄膜应力研究

综述了近几年薄膜应力研究的重点及新进展，探讨了薄膜应力研究的发展方向。     

金刚石薄膜和类金刚石薄膜

本文介绍了金刚石薄膜和类金刚石薄膜的制备与薄膜性能分析方法,也介绍了它们的应用前景。本文给出了华北光电所研究类金刚石薄膜的结果。     

HFCVD方法沉积金刚石薄膜的生长研究

本文讨论了金刚石薄膜应用于光学领域所遇到的问题，研究了热丝ＣＶＤ（ＨＦＣＶＤ）方法生长应用于光学膜的金刚石薄膜过程中，衬底表面的预处理和沉积条件如碳源浓度、衬底温度等对制备腹晶粒尺度和晶粒间界以及膜表面形貌的影响．     

脉冲激光沉积法制备氧化锌薄膜

ZnO是一种新型的Ⅱ-Ⅵ族半导体材料,具有优良的晶格、光学和电学性能,其显著的特点是在紫外波段存在受激发射。利用脉冲激光沉积法(PLD)在氧气氛中烧蚀锌靶制备了纳米晶氧化锌薄膜,衬底为石英玻璃,晶粒尺寸约为28-35 nm。X射线衍射(XRD)结果和光致发光(PL)光谱的测量表明,当衬底温度在100-250℃范围内时,所获得的ZnO薄膜具有c轴的择优取向,所有样品的强紫外发射中心均在378-385 nm范围内,深能级发射中心约518-558 nm,衬底温度为200℃时,得到了单一的紫外光发射(没有深能级发光)。这归因于其较高的结晶质量。