Microstructure and thermoelectric properties of Sb doped Hf0.25Zr0.75NiSn Half-Heusler compounds with improved carrier mobility

Half-Heusler (HH) semiconductor alloys are being widely investigated due to their promising potential for thermoelectric (TE) power generation applications. Sb is an effective doping element for n-type ZrNiSn half-Heuslers alloys. HH thermoelectric materials Hf_0.25Zr_0.75NiSn_1−xSb_x (0 ≤ x ≤ 0.03) were synthesized by induction melting combined with plasma activated sintering (PAS) technique. X-ray diffraction concluded that single-phase HH compounds without compositional segregations were obtained. Presence of bended lamellar structures was revealed by the FESEM. Sb doping significantly enhanced the electrical conductivity, power factor and carrier concentration of the alloys. An increase in the carrier mobility was also observed. Consequently, optimum values of 4.36 × 10⁻³ W/mK² and 4.7 × 10²⁰ cm⁻³ were achieved for power factor and carrier concentration, respectively. As a result, a ZT value of 0.83 at 923 K was obtained which is about 67% improvement compared to the un-doped sample.     

Thermoelectric properties of Cd doped tetrahedrite: Cu12−xCdxSb4S13

The effect of Cd doping on the thermoelectric properties of synthetic tetrahedrites Cu_12−xCd_xSb₄S₁₃ (x = 0, 0.25, 0.5, 0.75, 1, 1.25 and 1.5) was studied. Powder X-Ray Diffraction and electron probe micro analysis confirm the presence of tetrahedrite as main phase with a trace of impurity phases. The influence of Cd substitution on Cu was confirmed by a systematic increase of electrical resistivity and Seebeck coefficient with doping content. Power factor decreased with doping content mainly affected by the significant increase in electrical resistivity. The total thermal conductivity was found to be reduced from 1.32 W/m-K for the sample with x = 0 to 0.71 W/m-K for the sample x = 0.75 at 623 K but showed an abrupt increment for x = 1 and decreased for the subsequent samples with x = 1.25 and x = 1.5. A combined result of power factor and thermal conductivity leads to thermoelectric figure of merit, zT = 0.9 at 623 K for Cu_11.25Cd_0.75Sb₄S₁₃.     

Thermoelectric performance of Mg2−xCaxSi compounds

Thermoelectric materials Mg_2−xCa_xSi (x = 0, 0.01, 0.03, 0.05, 0.07, 0.1) compounds have been prepared by vacuum melting followed by hot-pressing. Effects of the substitution of Ca for Mg on phase structures and the thermoelectric properties of the hot-pressed compounds were investigated. It was found that the alloying of Ca in Mg₂Si based compounds increases the electrical conductivity and decreases the Seebeck coefficient of the compounds, due to the electronegativity difference between Ca and Mg. The dimensionless figures of merit of Mg₂Si and Mg_1.99Ca_0.01Si reach, respectively, 0.41 and 0.34 at 660 K.     

Synthesis and thermoelectric properties of CoSb3/WO3 thermoelectric composites

In this study, nano-sized WO₃ powder was dispersed into CoSb₃ powder by ball milling and CoSb₃/WO₃ thermoelectric composites were fabricated using hot-pressing sintering. The results showed that the WO₃ phase distributed uniformly in the form of clusters and the average size of cluster was lower than 4 μm. As the content of WO₃ increased, the electrical conductivity and Seebeck coefficient of CoSb₃/WO₃ composites decreased. The thermal conductivity of composites decreased obviously which resulted from the phonon scattering by the WO₃ inclusions locating on the grain boundaries of CoSb₃ matrix. The highest thermoelectric figure of merit ZT = 0.40 was achieved at 650 K for CoSb₃/2%WO₃ composite.     

Thermoelectric properties and electronic structure of p-type Mg2Si and Mg2Si0.6Ge0.4 compounds doped with Ga

Mg₂Si:Ga_x and Mg₂Si_0.6Ge_0.4:Ga_x (x = 0.4% and 0.8%) solid solutions have been synthesized by direct melting in tantalum crucibles and hot pressing. The effect of Ga doping on the thermoelectric properties has also been investigated by measurements of thermopower, electrical resistivity, Hall coefficient and thermal conductivity in temperature range from 300 to 850 K. All samples exhibit a p-type conductivity evidenced by positive sign of both thermopower and Hall coefficient in the investigated temperatures. The maximum value of the dimensionless figure of merit ZT was reached for the Mg₂Si_0.6Ge_0.4:Ga(0.8%) compound at 625 K (ZT ∼ 0.36). The p-type character of thermoelectric behaviours of Ga-doped Mg₂Si and Mg₂Si_0.6Ge_0.4 compounds well corroborates with the results of electronic structure calculations performed by the Korringa-Kohn-Rostoker method and the coherent potential approximation (KKR-CPA), since Ga diluted in Mg₂Si and Mg₂Si_0.6Ge_0.4 (on Si/Ge site) behaves as hole donor due to the Fermi level shifted to the valence band edge. The onset of large peak of DOS from Ga impurity at the valence band edge, well corroborates with high Seebeck coefficient measured in Ga-doped samples.     

Thermoelectric properties of Zn4Sb3 intermetallic compound doped with Aluminum and Silver

The β-phase Zn₄Sb₃ has attracted much attention because of its high thermoelectric performance in the intermediate temperature range thanks to disorder in the Zn lattice site. In this work are presented structural, thermal, electric and thermoelectric characterization of Zn₄Sb₃ pure and Ag, Al doped, prepared by a simple synthesis. Structural and microstructural analyses reveal homogeneous one-phases having compositions in agreement with the nominal ones. After thermoelectric characterization, Ag doping results mostly effective in lowering the resistivity and Seebeck coefficient value, by introducing holes in the system. On the other hand, the Al substitution yields a very small decrease of the Seebeck coefficient but, at the same time, a significant decrease of the thermal conductivity mainly due to the depressed phonon contribution. The thermal conductivity behavior is the main responsible for the good thermoelectric performances of (Zn_0.99Al_0.01)₄Sb₃, whose thermoelectric figure of merit reaches the encouraging value of 0.23 at 260 K.     

Thermoelectric properties of Indium doped Cu2GeSe3

Cu₂Ge_1−xIn_xSe₃ (x = 0, 0.05, 0.1, 0.15) compounds were prepared by a solid state synthesis. The powder X-ray diffraction pattern of the undoped sample revealed an orthorhombic phase. The increase in doping content led to the appearance of additional peaks related to cubic and tetragonal phases along with the orthorhombic phase. This may be due to the substitutional disorder created by Indium doping. Scanning Electron Microscopy micrographs showed a continuous large grain growth with low porosity, which confirms the compaction of the samples after hot pressing. Elemental composition was measured by Electron Probe Micro Analyzer and confirmed that all the samples are in the stoichiometric ratio. The electrical resistivity (ρ) systematically decreased with an increase in doping content, but increased with the temperature indicating a heavily doped semiconductor behavior. A positive Seebeck coefficient (S) of all samples in the entire temperature range reveal holes as predominant charge carriers. Positive Hall coefficient data for the compounds Cu₂In_xGe_1−xSe₃ (x = 0, 0.1) at room temperature (RT) confirm the sign of Seebeck coefficient. The trend of ρ as a function of doping content for the samples Cu₂In_xGe_1−xSe₃ with x = 0 and 0.1 agrees with the measured charge carrier density calculated from Hall data. The total thermal conductivity increased with rising doping content, attributed to an increase in carrier thermal conductivity. The thermal conductivity revealed 1/T dependence, which indicates the dominance of Umklapp phonon scattering at elevated temperatures. The maximum thermoelectric figure of merit (ZT) = 0.23 at 723 K was obtained for Cu₂In_0.1Ge_0.9Se₃.     

Investigation of thermoelectric properties of Cu2GaxSn1 − xSe3 diamond-like compounds by hot pressing and spark plasma sintering

P-type compounds Cu₂Ga_xSn_1 ? xSe₃ (x = 0.025, 0.05, 0.075) with a diamond-like structure were consolidated using hot pressing sintering (HP) and spark plasma sintering (SPS) techniques. High-temperature thermoelectric properties as well as low-temperature Hall data are reported. Microstructural analysis shows that the distribution of Ga is homogeneous in the samples sintered by HP but inhomogeneous in the samples sintered by SPS, even with an electrically isolating and thermally conducting BN layer during the sintering. The Seebeck coefficients of the samples sintered by HP and SPS show similar dependence on the carrier concentration and are insensitive to the composition inhomogeneity. In contrast, the composition inhomogeneity results in lower carrier mobility and thus lower electrical conductivity in the samples sintered by SPS than those sintered by HP. Lattice thermal conductivity is further reduced through Ga doping; however, this effect is weakened by the inhomogeneous distribution of Ga. Due to their larger carrier mobility and lower lattice thermal conductivity, the samples sintered by HP exhibit 15–35% higher thermoelectric figure of merits (ZT) than those SPS samples with a high Ga doping level and without the coated BN layer, in which the composition homogeneity is worse. A ZT value of 0.43 is obtained for the HP Cu₂Ga_0.075Sn_0.925Se₃ sample at 700 K.     

Enhanced thermoelectric cooling properties of Bi2Te3−xSex alloys fabricated by combining casting,milling and spark plasma sintering

Bi₂Te_3−xSe_x alloys are extensively used for thermoelectric cooling around room temperature, but, previous studies have reported peak thermoelectric efficiency of the material at higher temperature around 450 K. This study presents the casting followed by high energy ball milling and spark plasma sintering as a thriving methodology to produce efficient and well-built Bi₂Te_3−xSe_x material for the thermoelectric cooling around room temperature. In addition, changes in electrical and thermal transport properties brought up by amount of Se in the Bi₂Te_3−xSe_x material for this methodology are measured and discussed. Although Seebeck coefficient and electrical conductivity showed irregular trend, power factor, thermal conductivity and figure of merit ZT gradually decreased with the increase in amount of Se. A maximum ZT value of 0.875 at 323 K was obtained for x = 0.15 sample owing to its higher power factor. This value is 17% and 38% greater than for x = 0.3 and x = 0.6 samples respectively. At 323 K, herein reported ZT value of 0.875 is higher than the state of art n-type Bi₂Te₃ based thermoelectric materials produced by the time consuming and expensive methodologies.     

A new semiconductor Al2Fe3Si3 with complex crystal structure

Al₂Fe₃Si₃, a new semiconductor with complex triclinic structure was synthesized by arc melting and spark plasma sintering, followed by heat treatment. The nominal compositions of samples have been changed to compensate Al evaporation during synthesis process, and single Al₂Fe₃Si₃ phase has been obtained with the nominal composition of Al: Fe: Si = 26: 37: 37 (6 at.% Al excess against stoichiometry). In this study, we measured the sound velocity, thermal expansion coefficient, Vickers hardness, fracture toughness, electrical conductivity, Seebeck coefficient, and thermal conductivity of the new semiconductor Al₂Fe₃Si₃. The Al₂Fe₃Si₃ sample displayed positive Seebeck coefficient from 300 to 850 K, with a maximum Seebeck coefficient of 110 μV/K at 430 K. The Debye temperature of Al₂Fe₃Si₃ was 640 K, which was similar to or higher than those of other Al, Fe, Si based thermoelectric materials, but the lattice thermal conductivity was lower, 4–5 W/mK, due to the complex crystal structure of Al₂Fe₃Si₃. The maximum ZT value was 0.06 at 580 K.     

Electronic and transport properties of Mg2Si under isotropic strains

Density functional theory and Boltzmann theory calculations of the electronic and thermoelectric properties of Mg₂Si subjected to isotropic strains have been performed. The electrical conductivity, the Seebeck coefficient and the power factor have been evaluated at two temperatures (300 K and 900 K) and two charge carrier concentrations (10¹⁸ cm⁻³ and 1.2 × 10²⁰ cm⁻³ electrons and holes). Up to 3% of both compressive and tensile strains have been applied to the material. From our results, we can highlight that a significant improvement of both the Seebeck coefficient (S) and the power factor (PF) is obtained at low temperature and moderate n-doping. The increase in S and PF amounts to 40% and 100%, respectively, compared to the unstrained Mg₂Si.     

Thermoelectric properties of Sb-doped Mg2Si semiconductors

The thermoelectric properties of Sb-doped Mg₂Si (Mg₂Si:Sb = 1:x(0.001 ≦ x ≦ 0.02)) fabricated by spark plasma sintering have been characterized by Hall effect measurements at 300 K and by measurements of electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) between 300 and 900 K. Sb-doped Mg₂Si samples are n-type in the measured temperature range. The electron concentration of Sb-doped Mg₂Si at 300 K ranges from 2.2 × 10¹⁹ for the Sb concentration, where x = 0.001, to 1.5 × 10²⁰ cm⁻³ for x = 0.02. First-principles calculation revealed that Sb atoms are expected to be primarily located at the Si sites in Mg₂Si. The electrical resistivity, Seebeck coefficient, and thermal conductivity are strongly affected by the Sb concentration. The sample x = 0.02 shows a maximum value of the figure of merit ZT, which is 0.56 at 862 K.     

Thermoelectric properties of semi-conducting compound Zn4Sb3

Hot-pressed samples of the semi-conducting compound Zn₄Sb₃ with the stoichiometric composition were prepared and characterized by X-ray and microprobe analysis. Thermoelectric characterization was done through measurements of the electrical and thermal conductivities as well as the Seebeck coefficient between room temperature and 650 K. All samples had p-type conductivity. High thermoelectric figures of merit (ZT) were obtained between 450 and 650 K and a maximum of about 1.3 were obtained at a temperature of 650 K.     

Phases and thermoelectric properties of Ge1−x(Pb0.9Yb0.1)xTe alloys

A series of Ge_1−x(Pb_0.9Yb_0.1)_xTe alloys with x = 0.05, 0.10, 0.15, 0.20 and 0.30 were prepared by a conventional melting and a spark plasma sintering (SPS) techniques. The phases and thermoelectric properties for the alloys were investigated. The alloys consist of the GeTe-based rhombohedral single phase for x = 0.05, while both GeTe-based rhombohedral and PbTe-based rock-salt phases due to spinodal decomposition for the higher Pb content (x ≥ 0.10). The amount of the PbTe-based phase increases with the Pb content x increasing. All samples show p-type conduction. As Pb content x increases, the thermal conductivity reduces obviously, while the Seebeck coefficient and the electrical resistivity increases slightly. The maximum ZT of 1.4 at 723 K was eventually achieved in the sample with x = 0.15 due to its rather low thermal conductivity, from 3.7 W m⁻¹K⁻¹ at room temperature to 1.4 W m⁻¹K⁻¹ at 723 K (3.7–1.4 W m⁻¹K⁻¹), relative high Seebeck coefficient (46.5–141 μV K⁻¹) and relative low electrical resistivity (3.0–7.36 μΩ m).     

Effect of Al-doping on suppression of thermal conductivity in Si dispersed β-FeSi2

Silicon dispersed β-FeSi₂ with different aluminium concentrations are synthesized using eutectoid decomposition of α-Fe₂Si_5−xAl_x (0 ≤ x ≤ 0.1). Phase fractions, microstructure and thermoelectric properties of the above compositions have been investigated. Al-doping in Si dispersed β-FeSi₂ results in increased hole-carrier concentration thereby enhancing the electrical conductivity without compromising the Seebeck coefficient. This results in maximum power factor value of 4.7 μWcm⁻¹ K⁻² at 773 K for the sample with x = 0.1 which is significantly higher than that of an undoped sample. The thermal conductivity of the samples was fitted with the Debye-Callaway model to understand the various scattering processes involved. The analysis shows that an increased point defect scattering of phonons with Al-doping in addition to scattering by Si/β-FeSi₂ interface lowers the thermal conductivity significantly.     

The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4

Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu_2+xCd_1−xGeSe₄ (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K–723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu_2.1Cd_0.9GeSe₄.     

Thermoelectric Properties of Cu-doped Bi<Subscript>2−x</Subscript>Sb<Subscript>x</Subscript>Te<Subscript>3</Subscript> Prepared by Encapsulated Melting and Hot Pressing

P-type Bi_2?xSb_xTe₃:Cu_m (x = 1.5–1.7 and m = 0.002–0.003) solid solutions were synthesized using encapsulated melting and were consolidated using hot pressing. The effects of Sb substitution and Cu doping on the charge transport and thermoelectric properties were examined. The lattice constants decreased with increasing Sb and Cu contents. As the amount of Sb substitution and Cu doping was increased, the electrical conductivity increased, and the Seebeck coefficient decreased owing to the increase in the carrier concentration. All specimens exhibited degenerate semiconductor characteristics and positive Hall and Seebeck coefficients, indicating p-type conduction. The increased Sb substitution caused a shift in the onset temperature of the intrinsic transition and bipolar conduction to higher temperatures. The electronic thermal conductivity increased with increasing Sb and Cu contents owing to the increase in the carrier concentration, while the lattice thermal conductivity slightly decreased due to alloy scattering. A maximum figure of merit, ZT_max = 1.25, was achieved at 373 K for Bi_0.4Sb_1.6Te₃:Cu_0.003.     

Structure and thermoelectric performance of β-Cu2Se doped with Fe,Ni, Mn,In, Zn or Sm

Cu_1.99A_0.01Se (A = Fe, Ni, Mn, In, Zn or Sm) alloys with high thermoelectric performance were prepared through a conventional melting, ball milling and quenching route, followed by a spark plasma sintering technique. Elemental doping did not change the structure type of Cu₂Se. All the samples showed p-type conduction. All the doping elements except Indium reduced the electric resistivity and modified the carrier concentration, leading to a significant increase in the power factor. The lattice distortion and point defects due to the substitution of Cu became new phonon scattering centers, leading to a significant decrease in thermal conductivity. All the samples except the In-doped sample obtained better thermoelectric properties compared with the undoped Cu₂Se sample. The values of the figure of merit ZT of the samples doped with Zn, Mn, Ni, Fe and Sm were 1.25, 1.28, 1.51, 1.07 and 1.07 at 823 K, respectively. In Cu_2−xNi_xSe system, High ZT value of 1.51 is obtained for the sample of x = 0.0075 and 0.010 at 823 K.     

High-performance half-Heusler thermoelectric materials Hf1−x ZrxNiSn1−ySby prepared by levitation melting and spark plasma sintering

Half-Heusler thermoelectric materials Hf_1?xZr_xNiSn_1?ySb_y (x = 0, 0.25, 0.4, 0.5; y = 0.02, 0.04, 0.06) have been prepared by levitation melting followed by spark plasma sintering or hot pressing. X-ray diffraction analysis and scanning electron microscopy observation show that single-phased half-Heusler compounds without compositional segregations have been obtained by levitation melting in a time-efficient manner. A small amount of Sb doping can improve the electrical power factor but undesirably increases the thermal conductivity due to the increased carrier thermal conductivity. The isoelectronic substitution of Zr for Hf substantially decreased the lattice thermal conductivity. A state-of-the-art ZT value of 1.0 has been attained at 1000 K for the levitation-melted and spark-plasma-sintered Hf_0.6Zr_0.4NiSn_0.98Sb_0.02, which is one of the highest achieved ZT values for half-Heusler thermoelectric alloys.     

Sb掺杂对Mg_2Si基化合物热电性能的影响(英文)

采用感应熔炼和真空热压的方法制备了Sb掺杂和未掺杂的Mg2Si基热电材料.研究了Sb掺杂对Mg2Si基热电材料的结构以及热电特性的影响.结果表明:通过Sb掺杂使得载流子浓度从3.07x1019 cm-3增加到1.25x1020 cm-3,电子有效质量也相应增加.测试了从室温到800 K下试样的Seebeck系数,电导率和热导率.结果显示,0.3 at%Sb掺杂使得电导率得到显著增加,在783 K时,ZT值达到0.7.