To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009)

In Memoriam

To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009)     

Electrosynthesis of organic–inorganic compounds (p–n heterojunction)

An electrochemical deposition procedure by cyclic voltammetry, in an electrolyte solution was adopted for the preparation of thin films of polypyrrole–gallium arsenide composite materials. The properties of the composite layers were studied by cyclic voltammetry, electrochemical impedance spectroscopy and photoelectrochemical measurements. The p- and n-type semiconductor behaviour of the polypyrrole (PPy) and gallium arsenide (GaAs) were studied by photocurrent measurements. It was found that the composite material (PPy–GaAs) had a (p–n) heterojunction behaviour.     

2001亚洲信息技术展览会(CeBIT Asia2001)

ＣｅＢＩＴＡｓｉａ———亚洲信息技术展览会将于 2 0 0 1年 8月 8日至 11日首次在中国上海的光大展览中心举行 ,届时ＣｅＢＩＴ这一著名展览将登陆中国这一世界上最大的出口市场。这一投资不仅是面向中国的经济 ,同时也为建立同周边亚洲国家的商业联系敲开方便之门。有来自包括 2 2个国家的世界知名跨国公司在内的总共约 50 0家厂商参展此次展览。ＣｅＢＩＴ亚洲展展示的产品和解决方案涉及信息技术和电信、网络计算、办公自动化、软件、互联网、电子商务和消费电子产品。另外包括如ｅｎａｃａｓｉａ亚洲电子网络 (为公共和私人部门提供电…     

On the preparation and photoelectric properties of Tl1–x In1–x Sn x Se2 (x = 0.1–0.25) alloys

The technological conditions for growing single crystals of Tl_1–x In_1–x Sn _x Se₂ (x = 0.1–0.25) alloys are developed. The spectral distribution of the photoconductivity of the grown crystals at T = 300 K and thermally stimulated conductivity are studied. The effect of In³⁺cation substitution with Sn⁴⁺ in Tl_1–x In_1–x Sn _x Se₂ (x = 0.1–0.25) alloys on their photoelectric properties is shown.     

Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator

The nonvolatile memory thin-film transistors (M-TFTs) using a solution-processed indium-zinc-titanium oxide (IZTiO) active channel and a poly(vinylidene fluoride-trifluoroethylene) ferroelectric gate insulator were fabricated and characterized to elucidate the relationships between the IZTiO channel composition and the memory performances such as program speed and data retention. The compositions of the spin-coated IZTiO layers were modified with different Ti amounts of 0, 2, 5, and 10 mol%. The carrier concentration of IZTiO channel layer was effectively modulated by the incorporated Ti amounts and the defect densities within the channel were effectively reduced by Ti incorporation. The M-TFT fabricated with IZTiO channel with 2-mol% Ti composition exhibited the best overall device performances, in which the μ_FE, SS, MW, and programmed I_on/off were obtained to be 23.6 cm² V^?1 s^?1, 701 mV/decade, 11.8 V, and 1.2 × 10⁵, respectively. Furthermore, thanks to the suitable amounts of Ti incorporation into the IZO, the improved program speed and data retention properties were successfully confirmed.     

JOURNAL OF ELECTRONICS(2001) (CHINA) CONTENTS

NO.1Accm’ate Detection of High—Speed Multi—Target Video Sequences Motion Regions Based 011 Reconsttucted Background Difference ........................................ ......................…........…...Zhang Wentao,Li Xiaofeng,Li Zaiming(1)A Novel Imaging Method in Stepped Frequency Radar Without Spurious Peaks ...... …..,......….…....……....……….....Lei肌_,l,Long Teng,Han Yueqiu(8)A Modified Nonlinear Diffusion Model and Its Application to hnage Smoothing and Edge…     

Nanostructure Growth in the Ga(In)AsP–GaAs System under Quasi-Equilibrium Conditions

Semiconductors - The formation of nanostructures on the surface of GaAs under quasi-equilibrium conditions in a quasi-closed volume from saturated phosphor and indium vapors in the presence of a Au...     

The forward bias current density–voltage–temperature (J–V–T) characteristics of Al–SiO2–pSi (MIS) Schottky diodes

Metal–insulator–semiconductor Schottky diodes were fabricated to investigate the tunnel effect and the dominant carrier transport mechanism by using current density–voltage (J–V) and capacitance–voltage (C–V) measurements in the temperature range of 295–370?K. The slope of the ln?J–V curves was almost constant value over the nearly four decades of current and the forward bias current density J is found to be proportional to J_o (T) exp(AV). The values of N_ss estimated from J–V and C–V measurements decreased with increasing temperature. The temperature dependence of the barrier heights obtained from forward bias J–V was found to be entirely different than that from the reverse bias C–V characteristics. All these behaviours confirmed that the prepared samples have a tunnel effect and the current transport mechanism in the temperature range of 295–370?K was predominated by a trap-assisted multi-step tunnelling, although the Si wafer has low doping concentration and the measurements were made at moderate temperature.     

In memory of Anatoli $$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l} $$ Robertovich Regel’ (1915–1989)

Personalia

In memory of Anatoli $\overset{\lower0.5em\hbox{$\overset{\lower0.5em\hbox{ Robertovich Regel’ (1915–1989)     

Physical device modelling of emitter–base junction of In0.52Al0.48As/In0.53Ga0.47As-based SHBTs

This paper aims to evaluate the base–emitter forward characteristics of In_0.52Al_0.48As/In_0.53Ga_0.47As heterojunction bipolar transistors using numerical simulations in Silvaco while comparing results with fabricated devices. Analysis drawn from simulations reveals that in addition to doping, thickness of emitter and spacer region also plays an important role in determining the operational behaviour of device. The thickness of spacer region strongly influences the nature of heterojunction barrier formed that in turn controls the injection efficiency and dictates various recombination mechanisms. Even a few angstroms added to a spacer layer can cause considerable shift in DC characteristics. Methodology of device modelling is first validated by matching simulated results with the experimental measurements of two different structures. Spacer thickness and emitter doping is then varied in each of the structures to comprehensively study the effect of these variations onto important DC figures of merit.     

入侵检测系(HY-IDS2001)

HY—IDS2001系统是上海华依科技发展有限公司自行研制开发的网络入侵检测系统,是一种分布式的、基于网络的实时入侵检测、报警、响应和防范的工具,能实时分析网络内、外部的入侵企图,在网络系统受到危害前发出报警,对网络攻击做出反应,并采取应对措施,为网络系统提供最大的安全保障。     

Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cells

The effect of the [Ga]/[In+Ga] ratio of gallium and indium on the microwave photoconductivity of Cu–In–Ga–Se (CIGSe) films and on the efficiency of solar cells fabricated in accordance with the same technology is investigated. According to the observations of a field-emission scanning electron microscopy (FESEM), the grain size decreases with increasing Ga content. With increasing gallium content in the samples, the photogenerated-electron lifetime and the activation energy of the microwave photoconductivity also decrease. The changes in the activation energy of the through conduction in darkness are less than 20%. Analysis of the obtained data shows that the known effect of the gallium gradient on the efficiency should be associated with modification of the internal structure of grains instead of with their boundaries.     

In(Ga)As量子点红外探测器

讨论了量子点红外探测器的工作原理、性能参数、暗电流形成机理及其优势,介绍了In(Ga)As量子点红外探测器的主要结构、性能和取得的最新结果,最后探讨了如何进一步提高量子点红外探测器的性能。指出要实现量子点红外探测器的优势,必须优化量子点生长条件,让量子点更小、更均匀和密度更大;必须提高量子点的掺杂控制和掺杂水平,实现每个量子点中有1～2个电子;必须降低量子点生长中引入的应力,增加量子点有源区的层数;此外,还必须寻求新的量子点红外探测器结构。     

Band Gap of (In2S3)x(AgIn5S8)1 –x Single-Crystal Alloys

Semiconductors - In2S3, AgIn5S8, and (In2S3)x(AgIn5S8)1 – x-alloy single crystals are grown by the Bridgman method. The composition and structure of the crystals are determined. It is...     

The temperature dependent analysis of Au/TiO2 (rutile)/n-Si (MIS) SBDs using current–voltage–temperature (I–V–T) characteristics

In this study, the main electrical parameters of Au/TiO₂(rutile)/n-Si Schottky barrier diodes (SBDs) were analyzed by using current–voltage–temperature (I–V–T) characteristics in the temperature range 200–380 K. Titanium dioxide (TiO₂) thin film was deposited on a polycrystalline n-type Silicon (Si) substrate using the DC magnetron sputtering system at 200 °C. In order to improve the crystal quality deposited film was annealed at 900 °C in air atmosphere for phase transition from amorphous to rutile phase. The barrier height (Φ_b) and ideality factor (n) were calculated from I–V characteristics. An increase in the value of Φ_b and a decrease in n with increasing temperature were observed. The values of Φ_b and n for Au/TiO₂(rutile)/n-Si SBDs ranged from 0.57 eV and 3.50 (at 200 K) to 0.82 eV and 1.90 (at 380 K), respectively. In addition, series resistance (R_s) and Φ_b values of MIS SBDs were determined by using Cheung's and Norde's functions. Cheung's plots are obtained from the donward concave curvature region in the forward bias semi-logarithmic I–V curves originated from series resistance. Norde's function is easily used to obtain series resistance as a function of temperature due to current counduction mechanism which is dominated by thermionic emission (TE). The obtained results have been compared with each other and experimental results show that R_s values exhibit an unusual behavior that it increases with increasing temperature.