共查询到20条相似文献,搜索用时 31 毫秒
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《Photonics Technology Letters, IEEE》2009,21(14):975-977
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The GaN based blue light emitting diodes (LEDs) with a thin AlInN layer inserted in front of the electron blocking layer (EBL) are experimentally studied. It is found that inserting a thin EBL can improve the light output power and reduce the efficiency droop compared with the conventional AlGaN counterparts. Based on numerical simulation and analysis, the improvement on the electrical and optical characteristics is mainly attributed to the reduction of the electron leakage current, which increases the concentration of carriers in the quantum well (QW) when the thin AlInN layer is used. 相似文献
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A dual-blue light-emitting diode (LED) with asymmetric A1GaN composition-graded barriers but without an AlGaN electron blocking layer (EBL) is analyzed numerically. Its spectral stability and efficiency droop are improved compared with those of the conventional InGaN/GaN quantum well (QW) dual-blue LEDs based on stacking structure of two In0.18Ga0.szN/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. The improvement can be attributed to the markedly enhanced injection of holes into the dual-blue active regions and effective reduction of leakage current. 相似文献
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The typical light emission efficiency behaviors of InGaN/GaN multi-quantum well (MQW) blue light- emitting diodes (LEDs) grown on c-plane sapphire substrates are characterized by pulsed current operation mode in the temperature range 40 to 300 K. At temperatures lower than 80 K, the emission efficiency of the LEDs decreases approximately as an inverse square root relationship with drive current. We use an electron leakage model to explain such efficiency droop behavior; that is, the excess electron leakage into the p-side of the LEDs under high forward bias will significantly reduce the injection possibility of holes into the active layer, which in turn leads to a rapid reduction in the radiative recombination efficiency in the MQWs. Combining the electron leakage model and the quasi-neutrality principle in the p-type region, we can readily derive the inverse square root dependent function between the light emission efficiency and the drive current. It appears that the excess electron leakage into the p-type side of the LEDs is primarily responsible for the low-temperature efficiency droop behavior. 相似文献
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Ru-Chin Tu Chun-Ju Tun Shyi-Ming Pan Chang-Cheng Chuo J.K. Sheu Ching-En Tsai Te-Chung Wang Gou-Chung Chi 《Photonics Technology Letters, IEEE》2003,15(10):1342-1344
The 400-nm near-ultraviolet InGaN-GaN multiple quantum well light-emitting diodes (LEDs) with Mg-doped AlGaN electron-blocking (EB) layers of various configurations and grown under various conditions, were grown on sapphire substrates by metal-organic vapor phase epitaxy system. LEDs with AlGaN EB layers grown at low temperature (LT) were found more effectively to prevent electron overflow than conventional LEDs with an AlGaN one grown at high temperature (HT). The electroluminescent intensity of LEDs with an LT-grown AlGaN layer was nearly three times greater than that of LEDs with an HT-grown AlGaN. Additionally, the LEDs with an LT-grown AlGaN layer in H/sub 2/ ambient were found to increase the leakage current by three orders of magnitude and reduce the efficiency of emission. 相似文献
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The advantages of the p-AIInGaN/GaN superlattices' (SLs) structure as an electron blocking layer (EBL) for InGaN blue light-emitting diodes (LEDs) were studied by experiment and APSYS simulation. Elec- troluminescence (EL) measurement results show that the LEDs with the p-AllnGaN/GaN SLs' structure EBL ex- hibited better optical performance compared with the conventional A1GaN EBL due to the enhancement of hole concentration and hole carrier transport efficiency, and the confinement of electrons' overflow between multiple quantum-wells (MQWs) and EBL. 相似文献
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Simplified phosphorescent organic light-emitting device (PHOLED), which utilizes only two organic layers, showed record-high efficiency when first introduced. It is quite surprising that this device can have such high efficiency without the use of complex carrier and exciton confinement layers that are common in the state-of-the-art PHOLEDs nowadays. Therefore, it is important to understand how good charge balance is in simplified PHOLED and why. In this work, we study the effects of altering charge balance in simplified PHOLED through means of changing layer thickness in the hole transport layer (HTL) and electron transport layer (ETL) as well as intentionally doping hole and electron traps in the HTL and ETL, respectively, on device efficiency. The results show that when using high carrier mobility charge transport materials, changing layer thickness does not impact charge balance appreciably. On the other hand, introducing charge traps in a thin layer within the HTL or ETL can, in comparison, influence charge balance more significantly, and proves to be a more effective approach for studying the factors limiting charge balance in these devices. The results reveal that simplified PHOLEDs are generally hole-rich, and that the leakage of electrons to the counter electrode is also a major mechanism behind the poor charge balance and efficiency loss in these devices. In order to optimize charge balance in simplified PHOLED, it is important to reduce hole transport in the device so that e-h ratio can be brought closer to unity, as well as eliminate electron leakage. Finally, we show that by simply using an electron blocking HTL, the efficiency of the device can be enhanced by as much as 25%, representing the highest reported for simplified PHOLEDs. 相似文献
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The balance of electron–hole charge carriers in quantum dot (QD) light-emitting diodes (QLEDs) is an important factor to achieve high efficiency. However, poor interfacial properties between QDs and their adjacent layers are likely to deteriorate the electron–hole charge balance, resulting in the poor performance of a QLED. In this paper, we report an enhanced efficiency in red-emitting inverted QLEDs by modifying the interface properties between QDs and ZnO electron transport layer (ETL) using a thin layer of non-conjugated polymer, poly(4-vinylpyridine) (PVPy). Based on the precise control of the electrical properties with PVPy, the maximum efficiency of the QLED is enhanced by 30% compared to the device without a PVPy layer. In particular, the efficiency at low current density region is significantly increased. We investigate the effect of the PVPy interlayer on the performance of QLEDs and find that this thin layer not only shifts the energy levels of the underlying ZnO ETL, but also effectively blocks the leakage current at the ETL/QD interface. 相似文献
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High triplet energy electron transport materials with dibenzothiophene and dibenzofuran cores modified with a diphenyltriazine unit were investigated as electron transport type exciton blocking materials for stable blue phosphorescent organic light-emitting diodes. The two exciton blocking materials showed high triplet energy above 2.80 eV and enhanced quantum efficiency of the blue phosphorescent devices by more than 40% while maintaining stability of the pristine blue devices without the high triplet energy exciton blocking layer. 相似文献
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We demonstrate the cost-effective fabrication of organic light-emitting diodes (OLEDs) using a sputter-patterned indium–tin-oxide (ITO). This scheme brings in a leakage current on the slope of the sputter-patterned ITO edges due to spike-like surface. To suppress it, we place thermally evaporated organic insulating molecules right on the ITO edges for preventing hole leakage, just below the aluminum (Al) cathode for blocking electron leakage, or both on the ITO edges and below the Al cathode. It is demonstrated that blocking off both hole- and electron-leak pathways (via the spikes) is highly desired to enhance the current efficiency and lifetime of the sputter-patterned ITO-based OLEDs. 相似文献
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Jun-Rong Chen Chung-Hsien Lee Tsung-Shine Ko Yi-An Chang Tien-Chang Lu Hao-Chung Kuo Yen-Kuang Kuo Shing-Chung Wang 《Lightwave Technology, Journal of》2008,26(3):329-337
Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary AlGaN or a quaternary AlInGaN electronic blocking layer (EBL) have been numerically investigated by employing an advanced device-simulation program. The simulation results indicate that the characteristics of InGaN quantum-well lasers can be improved by using the quaternary AlInGaN EBL. When the aluminum and indium compositions in the AlInGaN EBL are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN EBL can be reduced. Under this circumstance, the electron leakage current and the laser threshold current can obviously be decreased as compared with the laser structure with a conventional AlGaN EBL when the built-in polarization is taken into account in the calculation. Furthermore, the AlInGaN EBL also gives a higher refractive index than the AlGaN EBL, which is a benefit for a higher quantum-well optical confinement factor in laser operations. 相似文献
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着重对紫外(UV)LED芯片的反向漏电进行研究,使用高Al组分的AlGaN材料作为LED外延结构中的电子阻挡层(EBL),旨在解决UV LED芯片在老化后的漏电问题。结果表明,高Al组分的AlGaN EBL凭借其足够高的势垒高度,可以有效降低电子泄漏水平,从而改善UV LED芯片在老化后的反向漏电问题。选取365~415 nm波段、量子阱禁带宽度为3.0~3.4 eV的外延片为研究对象,研究了EBL工艺对老化后芯片漏电性能的影响,得到AlGaN EBL的最佳Al组分为30%~40%,对应禁带宽度为4.0~4.3 eV。使用该方法制作的UV LED芯片在经过长时间老化后,其漏电流可以保持在1 nA以下,综合性能大幅提升。 相似文献
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Colloidal quantum dot light-emitting diodes (QLEDs) are reported with improved external quantum efficiencies (EQE) and efficiency roll-off under high current densities by introducing a thermally-evaporated organic cathode interfacial material (CIM) Phen-NaDPO. QLEDs with this new CIM modified Al cathode were fabricated, giving an upwards of 25% enhancement in the EQE relative to the bare Al device. Ultraviolet photoemission spectroscopy (UPS) suggests that this material can effectively lower the work function of Al, therefore facilitating the electron injection in QLEDs. Furthermore, Phen-NaDPO was introduced into the LiF/Al device to afford better balanced hole/electron injection in the emitting layer. Consequently, the QLEDs with the organic CIM/LiF/Al cathode further increased EQE and current efficiency by 44% and 52%, respectively, with higher luminance and lower efficiency roll-off under high current densities. 相似文献
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T. Takeuchi T. Detchprohm M. Iwaya N. Hayashi K. Isomura K. Kimura M. Yamaguchi S. Yamaguchi C. Wetzel H. Amano I. Akasaki Y. W. Kaneko R. Shioda S. Watanabe T. Hidaka Y. Yamaoka Y. S. Kaneko N. Yamada 《Journal of Electronic Materials》2000,29(3):302-305
We obtained 1 μm crack-free AlGaN layers up to an AlN molar fraction of 0.4 by growing directly on low-temperature-deposited
buffer layers. The buffer layer is effective for growing AlGaN layers without the stress caused by the lattice mismatch. We
also demonstrated nitride-based laser diodes with such a 1 μm crack-free n-AlGaN cladding layer/n-AlGaN contact layer/low-temperature-deposited
buffer layer/sapphire structure, which showed a clear single spot in a far field pattern. The AlGaN-based structure can suppress
optical leakage from the waveguide region to the underlying layer. The threshold current of the laser diode is about 230 mA,
which is comparable to or better than that of our laser diodes with the conventional GaN-based structure. 相似文献
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Lattice-matched Pt/Au–In0.17Al0.83N/GaN hetreojunction Schottky barrier diodes (SBDs) with circular planar structure have been fabricated. The electrical characteristics of InAlN/GaN SBD, such as two-dimensional electron gas (2DEG) density, turn-on voltage, Schottky barrier height, reverse breakdown voltage and the forward current-transport mechanisms, are investigated and compared with those of a conventional AlGaN/GaN SBD. The results show that, despite the higher Schottky barrier height, more dislocations in InAlN layer causes a larger leakage current and lower reverse breakdown voltage than the AlGaN/GaN SBD. The emission microscopy images of past-breakdown device suggest that a horizontal premature breakdown behavior attributed to the large leakage current happens in the InAlN/GaN SBD, differing from the vertical breakdown in the AlGaN/GaN SBD. 相似文献