Temperature dependent electrical and dielectric properties of Au/polyvinyl alcohol (Ni, Zn-doped)/n-Si Schottky diodes

The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si Schottky diodes (SDs) were studied in the temperature range of 80-400 K. The investigation of various SDs fabricated with different types of interfacial layer is important for understanding the electrical and dielectric properties of SDs. Therefore, in this study polyvinyl alcohol (PVA) film was used as an interfacial layer between metal and semiconductor. The electrical and dielectric properties of Au/PVA (Ni, Zn-doped)/n-Si SDs were calculated from the capacitance-voltage (C-V) and conductance-voltage (G/w-V) measurements. The effects of interface state density (N_ss) and series resistance (R_s) on C-V characteristics were investigated in the wide temperature range. It was found that both of the C-V-T and G/w-V-T curves included two abnormal regions and one intersection point. The dielectric constant (ε″), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) obtained from the measured capacitance and conductance were studied for Au/PVA (Ni, Zn-doped)/n-Si SDs. Experimental results show that the values of ε′, ε″ and tan δ are a strong function of the temperature. Also, the results indicate the interfacial polarization can be more easily occurred at high temperatures.     

Temperature dependent electrical and dielectric properties of Sn/p-Si metal-semiconductor (MS) structures

In this study, we investigated temperature dependent electrical and dielectric properties of the Sn/p-Si metal-semiconductor (MS) structures using capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics in the temperature range 80-400 K. The dielectric constant (ε′), dielectric loss (ε′′), dielectric loss tangent (tan δ) and ac electrical conductivity (σ_ac) were calculated from the C-V and G/ω-V measurements and plotted as a function of temperature. The values of the ε′, ε′′, tan δ and σ_ac at low temperature (=80 K) were found to be 0.57, 0.37, 0.56 and 1.04 × 10⁻⁷, where as the values of the ε′, ε′′, tan δ and σ_ac at high temperature (=400 K) were found to be 0.75, 0.44, 0.59 and 1.21 × 10⁻⁶, respectively. An increase in the values of the ε′, ε′′, tan δ and σ_ac where observed with increase in temperature. Furthermore, the effects of interface state density (N_SS) and series resistance (R_S) on C-V characteristics were investigated in the wide temperature range.     

Dielectric spectroscopy studies on (PVP + PVA) polyblend film

The thermal behavior of (PVP + PVA) polyblend film have been examined using differential scanning calorimetry and scanning electron microscopy. Capacitance and loss tangent values of polyvinyl pyrrolidone (PVP) + polyvinyl alcohol (PVA) polyblend film were measured in the frequency range 1-100 kHz and temperature range 298-423 K. Dielectric permittivity of real part (ε′) was obtained from capacitance data and dielectric permittivity of imaginary part (ε″) was obtained from real part of dielectric permittivity and loss tangent values. The decrease in dielectric permittivity was observed with increasing frequency and also observed increase in dielectric permittivity with increasing temperature. The complex dielectric constant (ε*) has been described by the electric modulus M* = (1/ε*) = M′ + iM″. The data of M* has been analysed by the stretched exponential decay of the electric field, Φ(t) = exp−(t/τ₀)^β.     

Frequency and voltage dependence of negative capacitance in Au/SiO2/n-GaAs structures

The frequency (f) and bias voltage (V) dependence of electrical and dielectric properties of Au/SiO₂/n-GaAs structures have been investigated in the frequency range of 10 kHz–3 MHz at room temperature by considering the presence of series resistance (R_s). The values of R_s, dielectric constant (ε′), dielectric loss (ε″) and dielectric loss tangent (tan δ) of these structures were obtained from capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements and these parameters were found to be strong functions of frequency and bias voltage. In the forward bias region, C–V plots show a negative capacitance (NC) behavior, hence ε′–V plots for each frequency value take negative values as well. Such negative values of C correspond to the maximum of the conductance (G/ω). The crosssection of the C–V plots appears as an abnormality when compared to the conventional behavior of ideal Schottky barrier diode (SBD), metal–insulator–semiconductor (MIS) and metal–oxide–semiconductor (MOS) structures. Such behavior of C and ε′ has been explained with the minority-carrier injection and relaxation theory. Experimental results show that the dielectric properties of these structures are quite sensitive to frequency and applied bias voltage especially at low frequencies because of continuous density distribution of interface states and their relaxation time.     

Temperature and frequency dependent electrical and dielectric properties of Al/SiO2/p-Si (MOS) structure

The electrical and dielectric properties of Al/SiO₂/p-Si (MOS) structures were studied in the frequency range 10 kHz-10 MHz and in the temperature range 295-400 K. The interfacial oxide layer thickness of 320 Å between metal and semiconductor was calculated from the measurement of the oxide capacitance in the strong accumulation region. The frequency and temperature dependence of dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_ac) are studied for Al/SiO₂/p-Si (MOS) structure. The electrical and dielectric properties of MOS structure were calculated from C-V and G-V measurements. Experimental results show that the ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased, and ε′, ε″, tan δ and σ_ac increase with increasing temperature. The values of ε′, ε″ and tan δ at 100 kHz were found to be 2.76, 0.17 and 0.06, respectively. The interfacial polarization can be more easily occurred at low frequencies, and the number of interface state density between Si/SiO₂ interface, consequently, contributes to the improvement of dielectric properties of Al/SiO₂/p-Si (MOS) structure. Also, the effects of interface state density (N_ss) and series resistance (R_s) of the sample on C-V characteristics are investigated. It was found that both capacitance C and conductance G were quite sensitive to temperature and frequency at relatively high temperatures and low frequencies, and the N_ss and R_s decreased with increasing temperature. This is behavior attributed to the thermal restructuring and reordering of the interface. The C-V and G/ω-V characteristics confirmed that the N_ss, R_s and thickness of insulator layer (δ) are important parameters that strongly influence both the electrical and dielectric parameters and conductivity in MOS structures.     

Frequency and gate voltage effects on the dielectric properties of Au/SiO2/n-Si structures

To determine the dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ), the ac electrical conductivity (σ_ac) and the electric modulus of Au/SiO₂/n-Si structure, the measurement admittance technique was used. Experimental results show that the values of ε′, ε″, tan δ, σ_ac and the electric modulus show fairly large frequency and gate bias dispersion especially at low frequencies due to the interface charges and polarization. An increase in the values of the ε′ and ε″ were observed with both a decrease in frequency and an increase in frequency. The σ_ac is found to increase with both increasing frequency and voltage. In addition, the experimental dielectrical data have been analyzed considering electric modulus formalism. It can be concluded that the interface charges and interfacial polarization have strong influence on the dielectric properties of metal-insulator-semiconductor (MIS) structures especially at low frequencies and both in depletion and accumulation regions.     

Influence of Geometric Parameters and Permittivity of Stripline Filters on Resonator Coupling Coefficients

It has been proved that electromagnetic coupling coefficients K of resonators in stripline filters with homogeneous dielectric depend only on geometric parameters of the filter designs and are independent of relative permittivity ε_r (if the dielectric is two-layer, coefficients K depend only on geometric parameters of the filter designs and ratio ε_r2/ε_r1). It has been shown that the revealed earlier influence of permittivity ε_r and the operating frequency on K is only a consequence of the influence of the length of stripline resonators on K: the lesser is the length, the larger is coefficient K. It has been found that these propositions enable consideration of frequency characteristics of the same design of the bandpass filter in different frequency bands by changing εr and performing slight changes in outermost resonators. The results of computer simulation of the transfer of frequency characteristics of a stripline bandpass filter from 3 GHz to 6 and 12 GHz with retaining the fractional bandwidth and selectivity are presented.     

Some transparent semi-conductor metal oxides: Comparative investigations in terms of Wemple–DiDomenico parameters, mechanical performance and Amlouk–Boubaker opto-thermal expansivity

Wemple–DiDomenico model parameters for oxides thin layers (Sb₂O₄, SnO₂, ZnO and WO₃) have been determined from experimental measurement of reflection R(λ) and T(λ) transmission ratios within the Ultraviolet–Visible–Near-Infrared (UV/VIS/NIR) domain (300–1800 nm). This study allowed deducing ε₁(λ) and ε₂(λ) expressions. Exploitation of results concerning their variations enabled estimating the plasma pulse ω_p, the relaxation time τ, the dielectric constant ε_∞ and susceptibility χ_e. Furthermore, opto-thermal and mechanical investigations have been carried out and discussed relatively to the already established optical and thermal characteristics.     

Dielectric properties and ac electrical conductivity studies of MIS type Schottky diodes at high temperatures

Dielectric properties and ac electrical conductivity of the Al/SiO₂/p-Si (MIS) Schottky diodes were studied in the frequency and temperature range of 10 kHz-1 MHz and 300-400 K, respectively. Experimental results show that the dielectric constant (ε′), dielectric loss (ε″), loss tangent (tan δ), ac electrical conductivity (σ_ac) and the electric modulus were found a strong function of frequency and temperature. The values of the ε′, ε″ and tan δ decrease with increasing frequencies due to the interface states capacitance and a decrease in conductance with increasing frequency. Also, these values increase with increasing temperature. The σ_ac is found to increase with increasing frequency and increasing temperature. The variation of conductivity as a function of temperature and frequency reveals non-adiabatic hopping of charge carriers between impurities localized states. In addition, the experimental dielectric data have been analyzed by considering electric modulus formalism.     

Energy spectrum of charge carriers in Ag2Te

Conductivity σ(T) and Hall constant R(B, T) are studied for Ag₂Te with excess 0.1% of Te. The change in the R sign from (?) to (+) is found in dependences R(B) at various temperatures. In the temperature dependences of R in a range of 1–3 kG, two extrema are found, namely, minimum at T ～ 60 and maximum at T ≈ 80 K, and at B ≥ 5 kG, the double change in sign of R from (?) to (+) and from (+) to (?) is found. Temperatures of sign inversion for R depend on the magnetic field. At B = 15 kG, the sign of R varies from (?) to (+) at T ≈ 38 K, and from (+) to (?) at T ～ 70 K. It is found approximately in the region of the change in the sign of R(T), the concentration n(T) and electrical conductivity pass through the minimum. It is established that the minima of n(T) and σ(T), extrema in R(T), and sign inversion for R(T) from (?) to (+) as well as the overestimated temperature dependence n∞T ⁴ are caused by localization of conduction electrons at acceptor levels entering the conduction band of Ag₂Te. The values of parameters of electrons (n, μ _n ) and holes (p, μ _p ) at the points of the change in the sign of R(T) from (?) to (+) and from (+) to (?) are determined.     

Dielectric Properties of Au/PVA (Cobalt-Doped)/n-Si Photoconductive Diodes

The voltage (V) and frequency (f) dependence of dielectric parameters such as the dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ), real and imaginary parts of electrical modulus (M′ and M″), and alternating-current (AC) electrical conductivity (σ _AC) of Au/PVA (cobalt-doped)/n-Si structures have been investigated by using experimental admittance measurements conducted at room temperature. The values of ε′, ε″, and tan δ were found to be strong functions of voltage and frequency, especially at low frequencies in the positive voltage region. It was observed that the values of ε′ and ε″ increase as the frequency decreases. The M′ values increase with increasing frequency due to increasing dielectric relaxation, while M″ values, in general, remain stable as frequency is changed. The σ _AC values at each bias voltage increase with increasing frequency.     

On the profile of frequency dependent dielectric properties of (Ni/Au)/GaN/Al0.3Ga0.7N heterostructures

The voltage (V) and frequency (f) dependence of dielectric characteristics such as dielectric constant (ε′), dielectric loss (ε^″), dielectric loss tangent (tan δ) and real and imaginary part of electrical modulus (Μ′ and M^″) of the (Ni/Au)/GaN/Al_0.3Ga_0.7N heterostructures have been investigated by using experimental admittance spectroscopy (capacitance-voltage (C-V) and conductance-voltage (G/w-V)) measurements at room temperature. Experimental results show that the values of the ε′, ε^″, tan δ and the real and imaginary parts of the electric modulus (Μ′ and M^″) obtained from the C and G/w measurements were found to be strong function of frequency and applied bias voltage especially in depletion region at low frequencies. These changes in dielectric parameters can be attributed to the interfacial GaN cap layer, interface polarization and a continuous density distribution of interface states and their relaxation time at metal/semiconductor interface. While the values of the ε′ decrease with increasing frequencies, tan δ, Μ′ and M^″ increase with the increasing frequency. Also, the dielectric loss (ε^″) have a local maximum at about frequency of 100 kHz. It can be concluded that the interface polarization can occur more easily at low frequencies with the number of interface states located at the metal/semiconductor interface.     

On the profile of frequency dependent series resistance and dielectric constant in MIS structure

In this study, the frequency dependent of the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/ω - V) measurements of Al/SiO₂/p-Si (MIS) structures are carried out in frequency range of 10 kHz-10 MHz. The frequency dependence of series resistance (R_s), density of surface states (N_ss), dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ) and the ac electrical conductivity (σ_dc) are studied for these structure at room temperature. Experimental results show that both electrical and dielectric parameters were strongly frequency and voltage dependent. The ε′ and ε″ are found to decrease with increasing frequency while σ_ac is increased. Also, both the effects of surface states N_ss and R_s on C-V and G/ω - V characteristics are investigated. It has been seen that the measured C and G decrease with increasing frequency due to a continuous distribution of N_ss in frequency range of 10 kHz-1 MHz. The effect of R_s on the C and G are found noticeable at high frequencies. Therefore, the high frequencies C and G values measured under both reverse and forward bias were corrected for the effect of series resistance R_s to obtain real MIS capacitance C_c and conductance G_c using the Nicollian and Goetzberger technique. The distribution profile of R_s-V gives a peak in the depletion region at low frequencies and disappears with increasing frequencies.     

Diffuse Phase Transition and Electrical Conductivity of Pb(Ca1/3Nb2/3)O3

The lead-based relaxor ceramic Pb(Ca_1/3Nb_2/3)O₃ was prepared by two-step solid-state reaction. The material stabilizes in the orthorhombic phase with refined lattice parameters a = 3.4814 Å, b = 12.9480 Å, and c = 14.2483 Å. The scanning electron micrograph is indicative of heterogeneous grain distribution with average grain size ~0.8–2.0 μm. The temperature-dependent dielectric response has a broad peak at 233.5°C (at 1 kHz, ε′ = 14523). A frequency-dependent shift toward higher temperature with increasing frequency is attributed to relaxor behaviour. Deviation from the Curie–Weiss law is observed at temperatures higher than the temperature, T _m, at which the dielectric constant is maximum. The modified Curie–Weiss law was used to fit the dielectric data; the results were indicative of almost complete diffuse phase transition characteristics. The dielectric relaxation obeys the Vogel–Fulcher relationship with freezing temperature T _f = 214.1°C, activation energy E _a = 0.16 eV, and relaxation frequency ν ₀ = 3.4 × 10⁷ Hz. Electrical conduction is mainly attributed to the hopping mechanism.     

Dielectric constant characterization of large-area substrates in millimeter wave band

A possibility of the dielectric constantε′ measurement for substrates with permittivityε=ε′+iε″ without an essential restriction on their area has been shown experimentally. The method uses frequency measurement of quasioptical dielectric resonator (QDR) with two slots oriented along the QDR radius with a dielectric substrate in one of them. Taking QDR of teflon in 8mm waveband as an example it is found that measurable values ofε′ can ran up 15ε′ _q , whereε′ _q is the QDR material permittivity. Absolute error of the measurements is determined by an accuracy with which the permittivity of calibrated (standard) samples is known. The relative measuring error is determined by the accuracy of the QDR frequency measurement and can be quite a small. As an example the method is demonstrated forLaAlO ₃ single crystals.     

Frequency and voltage dependence of admittance characteristics of Al/Al2O3/PVA:n-ZnSe Schottky barrier diodes

This paper reports the frequency dependence of admittance measurements i.e C–V and G/ω–V characteristics of Al/Al₂O₃/PVA:n-ZnSe MIS diode. The interface states (N_ss) and series resistance (R_s) of the MIS diode strongly influence the C–V–f and G/ω–V–f characteristics. The conductance method is used to calculate the series resistance (R_s), the density of states (N_ss), insulator layer capacitance and thickness. The frequency dependent dieclectric parameters such as dielectric constant (εʹ), dielectric loss (ε″), loss tangent (tan δ) and a.c. electrical conductivity (σ_ac) has been calculated and which are also responsible for observed frequency dispersion in C–V and G/ω curves.     

Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements

The dielectric properties of Ni/n-GaP Schottky diode were investigated in the temperature range 140–300 K by capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements. The effect of temperature on series resistance (R_s) and interface state density (N_ss) were investigated. The dependency of dielectric constant (ε′), dielectric loss (ε′′), loss tangent (tan δ), ac conductivity (σ_ac), real (M′) and imaginary (M′′) parts of the electric modulus over temperature were evaluated and analyzed at 1 MHz frequency. The temperature dependent characteristics of ε′ and ε′′ reveal the contribution of various polarization effects, which increases with temperature. The Arrhenius plot of σ_ac shows two activation energies revealing the presence of two distinct trap states in the chosen temperature range. Moreover, the capacitance–frequency (C–f) measurement over 1 kHz to 1 MHz was carried out to study the effect of localized interface states.     

Structural,electronic and optical properties of Ilmenite ATiO3(A=Fe,Co, Ni)

Ilmenite-type ATiO₃ (A=Fe, Co, Ni) crystals have been investigated via Generalized Gradient Approximation (GGA) in the scheme of Revised Perdew-Burke-Ernzerhof (RPBE) using the first-principles method. The band structures, densities of states, bond orders and charge populations, optical properties including the dielectric function ε(ω), absorption coefficient I(ω), refractive index n(ω), extinction coefficient k(ω), electron energy loss function L(ω) and reflectivity function R(ω), are calculated. The results show that the GGA-optimized geometries agree well with the experimental data. FeTiO₃ has a direct band gap, but both CoTiO₃ and NiTiO₃ exhibit indirect band gap. The analysis for densities of states and atomic charge populations exhibits that TiO bonds possess the stronger covalent bonding strength than AO bonds. The calculated optical properties along [100], [010] and [001] as well as polycrystalline directions demonstrate the significant optical anisotropy parallel and perpendicular to c-axis for ATiO₃. Finally, the origins of main peaks for optical spectra are presented based on electron transitions. Theoretical insights into the microscopic intrinsic properties of ATiO₃ should provide fundamental investigations for further understanding the Ilmenite ATiO₃ materials and improving their practical applications.     

Study of gate dielectric permittivity variation with different equivalent oxide thickness on channel engineered deep sub-micrometer n-MOSFET device for mixed signal applications

The impact of high permittivity gate dielectrics with different equivalent oxide thickness (EOT) for conventional, low and high tilt angle halo implants on the performance of 100 nm n-MOSFETs device is studied using device simulator Synopsys ISE-TCAD. In this paper, we systematically increase the value of gate dielectric (3.9-50) and investigate its effects on conventional, low angle of tilt (10^o) and high angle of tilt (50^o) halo implants for different device parameters of 100 nm n-MOSFETs using two different EOT viz. 1.5 nm and 2.0 nm. The impact of gate dielectric permittivity along with the different angles of halo implants on short channel performance contributing to the DIBL, the subthreshold swing, I_ON/I_OFF ratio, and the threshold voltage V_T are studied for two different EOT thicknesses. The device has been investigated for digital performance parameters like the variation of substrate-body voltage on DIBL, I_OFF, I_ON and the threshold voltage V_T for sub 100 nm technology generation. It has also been investigated for analog performance like trans-conductance generation factor (gm/I_D) and overall gain (gmR₀).     

On the stability of real exponential polynomials with interval-valued delays

We consider the family ? of exponential polynomials. $$f_T (z): = f_0 (z) + f_1 (z)e^{ - zT_1 } + f_2 (z)e^{ - T_2 } + \cdots + f_n (z)e^{ - zT_n } ,T : = T_1 \times T_2 \times \cdots \times T_n ,$$ where thef _k(z),k=0(1)n, are real polynomials under the degree restriction deg(f ₀)>deg(f _k),k=1(1)n, and theT _k,k=1(1)n, are intervals inR ₊. The functions in ? are characteristic functions of linear, retarded dynamical systems with constant coefficients and finitely many interval-valued discrete delays. A stability criterion for ? is expounded; ? is stable if (a) ? contains a stable member and (b) a certain functionalT:S(y) →; {0, 1} vanishes fory in a compact interval inR ₊. Here,S(y) is the boundary of a circular are regionS(y) in the complex plane derived fromf _T. Tools needed for a computer implementation are compiled.