Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity

Thin films of Zinc Oxide were deposited by the sol-gel technique on glass substrates. The films were doped with Al, Mg or co-doped with both by introduction of appropriate compounds in the solution before dip-coating and annealing in air at 500 °C. Energy Dispersive X-Ray Spectroscopy was employed to measure the dopant incorporation. X-ray diffraction studies indicate that Mg doping increases grain size, while Al doping reduces it. Photoluminescence (PL) measurements indicate that undoped and Al-doped films show, along with a broad near band-edge (NBE) peak, additional peaks at longer wavelengths related to various defect states. However Mg doped films show only a sharp NBE peak, which is blue shifted compared to undoped ZnO, and there are no prominent sub band gap luminescence peaks. This is also the case for Mg and Al co-doped ZnO samples, provided the Mg content is low. Photocurrent measurements were carried out using silver contacts using a De source under atmospheric conditions. Undoped and Mg doped ZnO films showed high resistances and low photocurrent levels. With low Al doping, both the dark current and the photocurrent increase significantly, but the films show very long photocurrent transients. With optimized concentration of Mg/Al co-doping in ZnO, the photocurrent increased by ~98 times compared to ZnO films doped only with Mg. Simultaneously, the photocurrent transients became ~44 times faster than ZnO films doped only with Al.     

Zn(MgBe)Se ultraviolet photodetectors

We present the growth and characterization of blue-violet and ultraviolet photodetectors based on ZnSe and Zn(Mg)BeSe compounds. Structures are grown by molecular beam epitaxy on (001) GaAs substrates. Three types of photodetectors have been fabricated. Zn(Mg)BeSe p-i-n photodiodes exhibit a high response of 0.17 A/W with a rejection rate of 10⁴ and a wavelength cutoff of 450 nm. Schottky barrier photodiodes based on planar geometry devices display a very flat response above the band gap with a rejection rate above 10³. High responses with quantum efficiency higher than 50% have been obtained. The wavelength cutoff can be tuned from 460 (ZnSe) to 380 nm (ZnMgBeSe), which leads to visible blind devices. Detectivities from 2.0 10¹⁰ (ZnMgBeSe) to 1.3 10¹⁰ mHz^1/2W⁻¹ (ZnSe) have also been measured. Metal-semiconductor-metal devices, recently fabricated, exhibit a spectral response very similar to Schottky devices. Quantum efficiencies of 40% are easily obtained in these devices with a rejection rate of 10³.     

Exciton-induced degradation of organic/electrode interfaces in ultraviolet organic photodetectors

We study the degradation mechanisms of ultraviolet (UV) organic photodetectors (OPDs). Contrary to expectations, we determine that the bulk of the organic layers in UV OPDs is stable under prolonged UV irradiation, showing no detectable changes in photophysical characteristics such as photoluminescence yield and exciton lifetime and thus not contributing to the observed degradation behavior of UV OPDs. However, the results show that the organic/electrode interfaces in UV OPDs, including indium tin oxide (ITO)/organic and organic/metal ones, are susceptible to UV irradiation, leading to a deterioration in both charge injection and extraction across the interfaces. The degradation of the organic/electrode interfaces in UV OPDs is essentially induced by UV-generated excitons in their vicinity and may be responsible for nearly 100% of the photo-current loss of UV OPDs. Approaches for improving the photo-stability of organic/electrode interfaces, and thus the lifetime of UV OPDs, are also investigated. We demonstrate that the use of thin (∼0.5 nm) interfacial layers such as lithium acetylacetonate at organic/metal interfaces can significantly reduce the interfacial degradation, and the use of appropriate hole transport materials such as N,N′-bis (naphthalen-1-yl)-N,N′-bis(phenyl) benzidine at ITO/organic interfaces can greatly improve the interfacial photo-stability.     

Recent advances in flexible photodetectors based on 1D nanostructures

Semiconductor nanowires have demonstrated excellent electronic and optoelectronic properties. When integrated into photodetectors, excellent device performance can be easily attained. Apart from the exceptional performance, these nanowires can also enable robust and mechanically flexible photodetectors for various advanced utilizations that the rigid counterparts cannot perform. These unique applications include personal healthcare, next-generation robotics and many others. In this review, we would first discuss the nanowire fabrication techniques as well as the assembly methods of constructing large-scale nanowire arrays. Then, the recent development of flexible photodetectors based on these different nanowire material systems is evaluated in detail. At the same time, we also introduce some recent advancement that allows individual photodetectors to integrate into a more complex system for advanced deployment. Finally, a short conclusion and outlook of challenges faced in the future of the community is presented.     

半导体纳米线红外探测研究进展（特邀）

近年来,红外探测器由于其在军民领域广阔的应用前景已经受到了越来越多的关注。为了进一步实现室温宽谱段、高灵敏度、快速响应以及低功耗的红外探测器,低维半导体作为极具潜力的新型沟道材料得到了广泛的研究。其中,纳米线有着独特的电学与光电特性,当被应用到红外光电探测器中时,展现出了巨大的优势,例如尺寸小、功耗低、光吸收效率高、表面态丰富、易于光电子分离与收集以及与传统硅基工艺兼容等等。当前,对于纳米线红外探测器的研究一直在进行中并不断取得突破。文中主要概述了纳米线在红外光电探测领域的最新研究进展,介绍了半导体纳米线的基本特性、材料选择和制备方法,展示了多种二元与三元化合物半导体中已实现红外探测的纳米线材料及其当前研究达到的探测水平,并且分类总结了多种进一步提高光电探测性能的方法,包括异质结合、外场调控、器件集成等,随后针对不同构型纳米线红外探测器的优缺点,进行了简要的对比与说明,最后基于该领域仍然面临的挑战对其未来的发展方向进行了展望,并为其技术发展路线提出了初步的建议。     

二维材料在红外探测器中的应用最新进展（特邀）

二维材料,具有原子厚度,以其独特的物理、化学性质,吸引了广大研究人员的关注,成为了众多研究领域（如物理、材料、电子、光电子和化学等）的明星材料。因二维材料具有较高的载流子迁移率、强的光-物质相互作用、电/光学性质各向异性等,使其在光电子领域具有光明的应用前景。其中,窄带隙二维材料,如黑磷、黑磷砷等,在红外光电探测器中表现出巨大的应用潜力,成为了红外探测领域的新宠。文中将对二维材料在红外探测器中的应用,特别是光子型光电探测器的最新进展进行介绍。首先对二维材料的背景进行介绍;然后介绍表征光电探测器的关键参数;接着介绍二维材料在红外探测器中的最新进展,分别展示了单二维材料红外探测器、异质结红外探测器和光波导红外探测器方面的进展;最后对二维材料在红外探测器中的应用进行展望。     

Amplified Spontaneous Emission in Close‐Packed Films of Semiconductor Nanocrystals Using Picosecond Excitation

We present experimental observations of line‐narrowing of the photoluminescence in close‐packed thin films of CdSe nanocrystals with epitaxial ZnS shells, under excitation from a pulsed source of 100 ps duration, both at 77 K and at room temperature (RT). Atomic force microscopy (AFM) of these films reveals them to be optically flat to less than 1 % of the emission wavelength and we propose that waveguiding and amplified spontaneous emission is the principal mechanism for line‐narrowing. We observe that line‐narrowing is assisted by the use of films with a bimodal distribution of nanocrystal sizes, where the excited state population is concentrated on the larger nanocrystals due to energy transfer.     

Very high-speed ultraviolet photodetectors fabricated on GaN

We report on the temporal and the frequency response of both metal-semiconductor-metal (MSM) and p-i-n ultraviolet photodetectors fabricated on single-crystal GaN. The best MSM devices show a fast 10–90% rise-time of ∼28 psec under comparatively low ultraviolet excitation of ∼0.1 W/cm² averagerirradiance. The fast-Fourier transform (FFT) of the pulse response data indicates a bandwidth, f_3dB, of ∼3.8 GHz at a reverse bias of 25 V. This agrees well with the direct frequency response measurement value of ∼3.5 GHz. For the p-i-n devices, we measured a rise-time of ∼43 psec at 15 V reverse bias for a 60 μm diameter mesa with 1 μm thick intrinsic region. The FFT of the p-i-n pulse response obtains f_3dB ≈1.4 GHz. Analysis in terms of reverse bias and geometric scaling indicates that the MSM photodetectors are transit-time limited. The p-i-n devices also show evidence of transit-time limited effects based on trends with respect to reverse bias and intrinsic region thickness. However, our larger area p-i-n devices show clear evidence of RC-limited behavior. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity. We have also found preliminary evidence of microplasmic effects in the p-i-n devices.     

4H-SiC p-i-n紫外光电探测器的电容-电压特性研究

分析并比较了4H-SiC p-i-n紫外光电探测器的电容-电压（C-V）特性随温度和偏置电压的变化情况,观测到4H-SiC p-i-n结构中的深能级缺陷。结果表明：由于近零偏压时探测器i型层已处于耗尽状态,其高频（1 MHz）C-V特性几乎不随反向偏压变化,随着温度升高,被热离化的自由载流子数量增多导致高频结电容随之增大;探测器的低频（100 kHz）结电容比高频结电容具有更强的电压和温度依赖性,原因在于被深能级缺陷俘获的载流子随反向偏压增大或随温度升高而被离化,从而对结电容产生影响。     

Low-noise solar-blind AlxGa1-xN-based metal-semiconductor-metal ultraviolet photodetectors

We report the growth, fabrication, and characterization of high performance Schottky metal-semiconductor-metal solar-blind photodetectors fabricated on epitaxial Al_0.4Ga_0.6N layers grown by metalorganic chemical vapor deposition. The devices exhibited low dark current (<2 pA at 30 V) and a gain-enhanced ultraviolet (UV) photocurrent for bias voltages >40 V. The gain was corroborated by external quantum efficiency measurements reflecting a quantum efficiency as high as 49% (at=272 nm) at 90 V bias, with a corresponding responsivity R=107 mA/W. A visible-to-UV rejection factor of more than three orders of magnitude was demonstrated. Time-domain and frequency-domain speed measurements show a 3-dB bandwidth of ∼100 MHz. Low-frequency noise measurements have determined a detectivity (D^*) as high as 3.3 10¹⁰ cm·Hz^1/2/W for a 500 Hz bandwidth at 37 V bias.     

一种肖特基势垒强型N-AlGaN基 MSM日盲紫外光电探测器

研制一种以薄的高阻AlGaN覆盖层作为肖特基势垒增强层的N?AlGaN基金属?半导体?金属（MSM）日盲紫外光电探测器。与无覆盖层的参考器件相比,覆盖高阻AlGaN层后探测器的暗电流大幅度减小。在5 V偏压下,覆盖高阻AlGaN层的光电探测器的暗电流为1.6 pA,响应度为22.5 mA/W,日盲紫外抑制比大于103,探测率为6.3×1010 cm·Hz1/2/W。     

Nitride-Based ultraviolet metal-semiconductor-metal photodetectors with a low-temperature GaN layer

The GaN metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors with a low-temperature (LT)-GaN layer have been demonstrated. It was found that we could achieve a two orders of magnitude smaller, photodetector-dark current by introducing a LT-GaN layer, which could be attributed to the larger Schottky-barrier height between the Ni/Au metal contact and the LT-GaN layer. It was also found that photodetectors with the LT-GaN layer could provide a larger photocurrent to dark-current contrast ratio and a larger UV-to-visible rejection ratio. The maximum responsivity was found to be 3.3 A/W and 0.13 A/W when the photodetector with a LT-GaN layer was biased at 5 V and 1 V, respectively.     

量子阱红外探测器最新进展

量子阱红外探测器(QWIP)自从20世纪80年代被验证后,得到了广泛积极的研究。基于Ⅲ-Ⅴ材料体系、器件工艺的成熟和自身的稳定性、响应带宽窄等特有的优势,QWIP成为对低成本、大面阵、双(多)色高精度探测有综合要求的第三代红外焦平面阵列(FPA)的重要发展方向。本文主要总结了国际QWIP器件的最新发展动态,并展望了其发展趋势。     

Solvent Dependent Shape and Magnetic Properties of Doped ZnO Nanostructures

This study reports on a new solution phase synthesis leading to cobalt and manganese doped ZnO which have been theoretically predicted ferromagnetic at room temperature. The solvothermal synthesis involving the reaction of zinc and cobalt acetate or manganese oleate with benzyl alcohol leads to pure inorganic nanoparticles that are diluted magnetic semiconductors. The addition of an inert solvent, that is used in order to control the amount of benzyl alcohol, drastically influences the particles morphology and strongly affects the magnetic behaviors. Cobalt doped particles are paramagnetic or ferromagnetic depending on the synthesis conditions. In order to exclude the formation of secondary phases and/or metal clusters and to understand the role of the solvent on the magnetic properties, the local structure of Co²⁺ and Mn²⁺ in the wurtzite ZnO matrix were characterized by XRD, UV‐visible diffuse reflectance and electron paramagnetic resonance.     

碳纳米管薄膜制备及其光电探测应用进展

光电探测器在遥感、夜视、侦察、医学成像、环境保护和化学检测等方面的应用十分广泛,而光电探测材料的结构与性能直接影响着光电探测器的性能.近年来碳纳米管由其所具有的独特光学和电学性能迅速成长为光电探测中不可或缺的材料.虽然前期研究主要集中在基于单根碳纳米管的光电响应机理研究,但由于未来应用场景中必然是以碳纳米管薄膜为基础的...     

Step-by-step design procedure for a grid-connected three-phase PWM voltage source converter

The voltage source active rectifier is one of the most interesting solutions to interfacing dc power systems to the grid. Many elements are responsible for the overall system behaviour, such as value of the passive elements, sensors position, analog/digital filters and ac current/dc voltage controllers. In this paper a step-by-step design procedure, taking into account all these elements, is proposed and validated through the tests on an experimental prototype. The reported results are particularly relevant to evaluate the influence on the grid current harmonic content of the grid sensor position and of the use of analog filters in the feedback signals.     

紫外光通信中调制技术研究

紫外光通信是无线光通信的一种,它是利用紫外光在大气中的散射来进行信息传输的一种新型通信模式。然而,紫外光通信的调制解调技术是整个系统的关键难点。在详细阐述紫外光单散射信道模型的基础上,分析了开关键控(OOK)和脉冲位置调制(PPM)的调制结构,并在紫外光单散射信道模型中对上述两种调制技术进行了比较。结果表明:PPM调制技术在误码率性能及信息传输速率上都要优于OOK调制技术,并且随着PPM调制阶数的增加,这种优势会更加的明显。     

太赫兹波导发展现状与展望

太赫兹波具有良好的穿透性、低能性和宽带性,在高速空间通信、环境监测、外差探测、医学探测、无损检测和国防安全等领域具有重要的应用前景。波导传输技术和功能器件是太赫兹系统不可或缺的重要组成部分,太赫兹波导的性能决定了太赫兹系统的信号传输效率和集成度,引起人们的研究兴趣。近年来,太赫兹波导的发展取得了长足的进步,从普通的金属空心波导到金属线波导、介质光纤,再到最近的人工表面等离激元波导、石墨烯、铌酸锂等新型波导,它们展现出了各自的优势,令人振奋。该综述全面介绍了太赫兹波导领域的发展及研究近况,并对其未来应用进行了展望。     

激光光学研究的进展

对激光光学研究的进展作了综述。提出一些在光束描述和传输变换中值得进一步研究的问题，并作了简略分析。