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The structural, elastic, and thermodynamic properties of ZnGeP2 with chalcopyrite structure are investigated using the pseudo-potentials plane wave method based on the density functional theory with the generalized gradient approximation. The lattice parameters (a, c and u) are directly calculated and agree well with previous experimental and theoretical results. The obtained negative formation enthalpy shows that ZnGeP2 crystal has strong structural stability. We have also calculated the bulk modulus B and the elastic parameters (C11, C12, C13, C33, C44, and C66) which have not been measured yet. The accuracy and reliability of the calculated elastic constants of ZnGeP2 crystal are discussed. In addition, the pressure and temperature dependencies of the lattice parameters, bulk modulus, Debye temperature, Grüneisen parameter, entropy, volume thermal expansion coefficient, and specific heat capacity are obtained in the ranges of 0–20 GPa and 0–1200 K using the quasi-harmonic Debye model. To our knowledge this is the first quantitative theoretical prediction of the thermodynamic properties for ZnGeP2 compound and still awaits experimental confirmations. 相似文献
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The ab-initio calculations for the structural, electronic, optical, elastic and thermal properties of Ag-chalcopyrites (AgAlX2: X=S and Se) have been reported using the full potential linearized augmented plane wave (FP-LAPW) method. In this paper, the recently developed Tran–Blaha modified Becke–Johnson potential is used along with the Wu-Cohen generalized gradient approximation (WC-GGA) for the exchange-correlation potential. Results are presented for lattice constants, bulk modulus and its pressure derivative, band structures, dielectric constants and refractive indices. We have also computed the six elastic constants (C11, C12, C13, C33, C44, C66). The thermodynamical properties such as thermal expansion, heat capacity, Debye temperature, entropy, bulk modulus are calculated employing the quasi-harmonic Debye model at different temperatures (0–900 K) and pressures (0–8 GPa) and the silent results are interpreted. Hardness of the materials is calculated for the first time at different temperatures and pressures. 相似文献
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Trihalide perovskites are an emerging class of materials, which have shown excellent performance so far in solution-processed optoelectronic devices such as perovskite solar cells (PSCs) and light emitting diodes (LEDs). The energy band gap (Egap) of this class of materials is tunable and can be varied from 1.5 eV to 2.3 eV by changing its chemical composition, exhibiting a promising character to design versatile optoelectronic devices. It is thus, imperative to understand the relation between structural and optoelectronic properties of the perovskite-based materials offering intrinsic complexity. Hence, different interactions, defects as well as structural disorder have a defining role in the material properties. The intrinsic properties have been shown to have a significant impact on the performance of these perovskite materials. These properties include high dielectric constants, ambipolar transport features of long range, low exciton binding energies, and ferroelectric polarizations. In the current review, we briefly explore the crystal structure of the perovskite materials at atomistic-level and draw a comparison of the basic optical and electrical properties originating from particular atomic compositions together with their arrangements therein, and moreover, their applications in future optoelectronic devices are elaborated upon. 相似文献
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Ag3AuSe2 and Ag3AuTe2 are interesting class of semiconducting materials. Here, elastic and opto-electronic properties of Ag3AuSe2 and Ag3AuTe2 semiconductors are studied in detail using density functional theory. Different schemes are selected to treat the exchange-correlation effects. The unit cell of the compounds is fully optimized and calculated cell constants are found in agreement to the existing experimental data. The calculated elastic constants and elastic moduli reveal that the compounds possess ductile nature and are elastically stable. It is found that both compounds are direct bandgap semiconductor with bandgap value of 1.009 eV for Ag3AuSe2 and 0.551 eV for Ag3AuTe2. As the compounds have narrow and direct bandgaps, therefore optically active. The optical properties like reflectivity, absorption coefficient, energy loss function, refractive index including and complex dielectric function are studied in detail. The direct band gap nature of these compounds make them useful candidate for different devices applications. 相似文献
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A detailed theoretical study of the electronic structure, optical, elastic and thermodynamics properties of jadeite have been performed by means of the first principles based on the state-of-the-art of density functional theory within the generalized gradient approximation. The optimized lattice constants and the atomic positions are in good agreement with experimental data. The total density of states and partial density of states of jadeite have been discussed. The energy gap has been calculated along the Γ direction found to be 5.338 eV, which shows that jadeite has wide direct band gap. The optical properties, such as the dielectric function, refractive index, extinction coefficient, reflectivity coefficient, loss function and absorption coefficient for [100] and [001] directions have been described for the first time in the energy range 0–40 eV. The elastic constants, bulk modulus, Young׳s modulus, anisotropic factor and Poisson׳s ratio have been calculated. Furthermore, the Vickers hardness and Debye temperature of jadeite have been predicted. The calculated values of all above parameters are compared with the available experimental values. 相似文献
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We present a theoretical study of structural, elastic, thermodynamic, and electronic properties of the uranium filled skutterudite UFe4P12. We use the full-potential linear muffin–tin orbital (FP-LMTO) method in which the local density approximation (LDA) is used for the exchange-correlation (XC) potential. The lattice parameter at equilibrium, the bulk modulus, its pressure derivative, the elastic constants and the band structure energy of the filled skutterudite UFe4P12 are calculated and systematically compared to available theoretical and experimental data. Herein, we use the total energy variation as function of strain technique to determine independent elastic constants and their pressure dependence. Furthermore, using quasi-harmonic Debye model with phonon effects, the effect of pressure P and temperature T on the lattice parameter, bulk modulus, thermal expansion coefficient, Debye temperature and the heat capacity of UFe4P12 are investigated for the first time. Band structure of UFe4P12 indicates a tendency of forming a pseudo-gap that appears above the Fermi level at Γ point. This is a unique characteristic of skutterudite, especially when a single phosphorous p-band crosses the Fermi level. The crossing band is, indeed, pushed down by the repulsion of U f-resonance states. 相似文献
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Structural and mechanical properties in rutile (tetragonal) phases of SnO2 and TiO2 are investigated by performing first-principle density functional theory (DFT) calculations. Generalized Gradient Approximation (GGA) potentials of electronic exchange and correlation part parameterized by Perdew–Burke–Ernzerhof (PBE) are used. Second order elastic stiffness constants, bulk modulus, first-derivative of bulk modulus, and pressure behavior of these mechanical properties are studied up to pressure of 10 GPa. Structural properties and elastic constants of SnO2 and TiO2 calculated in this study are compatible with experimental and other available theoretical studies. Electronic band gap energies of these semiconductors are also calculated. As expected, the calculated values by standard DFT calculations are underestimated in comparison to experimental values. 相似文献
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M. Ameri K. Boudia R. Khenata B. Bouhafs A. Rais S. Bin Omran B. Abidri Y. Al-Douri 《Materials Science in Semiconductor Processing》2013,16(6):1508-1516
Structural, elastic, electronic and thermodynamic properties of the ternary cubic filled skutterudite CeOs4Sb12 compound were calculated using the full-potential linear muffin-tin orbital implementation of density functional theory. The exchange-correlation potential was treated with the local density approximation. The calculated ground state quantities such as the lattice parameter, atomic position parameters of Sb atoms, bulk modulus and its pressure derivative are compared to the available experimental data. We have computed the elastic moduli and their pressure dependence, which have not been calculated or measured yet. The Debye temperature is estimated from the average sound velocity. From the elastic parameter behavior, it is inferred that this compound is elastically stable and brittle in nature. The electronic band structure calculations revealed metallic behavior for the herein studied compound at zero pressure, but under pressure effect, the metallic character disappears and the compound becomes a narrow indirect band gap semiconductor. Through the quasi-harmonic Debye model, in which phononic effects are considered, the effect of pressure P and temperature T on the lattice constant, bulk modulus, heat capacity, thermal expansion coefficient and Debye temperature are investigated. 相似文献
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In order to investigate the photo-physical, electrochemical, and optoelectronic properties of dipolar 5,5,10,10-tetraphenyl-5,10-dihydroindeno[2,1-a]-indene (TDI) derivatives, a facile synthesis has been developed to integrate arylamine (electron donor fragment, D) and aryl-2-methylenemalononitrile (electron acceptor fragment, A) into the TDI bridge. According to calculation results using the DFT/B3LYP/6-31G(d) method, the HOMO and LUMO energies of TDI derivatives are relevant to the extent of corresponding electron donating and accepting abilities, and influence the open-circuit voltage (Voc) and driving force (ΔE) in organic photovoltaics (OPV). The projected density of state (pDOS) analysis shows that the electron density distribution from the D fragment to TDI bridge in the HOMO is attributing to the electron-donating ability, whereas the electrons are mainly localized on A fragment in the LUMO. Calculations of the reorganization energy by the DFT/B3LYP/6-31G(d) method suggest these D-TDI-A derivatives are hole-transporting type materials. On the other hand, the calculated absorption spectra for these molecules in CH2Cl2 are simulated by using the TD-DFT/BH and HLYP/6-31G(d) method within the Polarizable Continuum Model (PCM) and provide the maximum absorption wavelength (λmax), which can be assigned to the HOMO to LUMO transition. HOMO is found to be the π orbital which is delocalized between the D fragment and the π-linker and LUMO is the π1 orbital which is concentrated on the A fragment. The optical properties of D-TDI-A derivatives can be influenced by the D fragment and π-conjugated length. Calculated results of D-TDI-A derivatives also exhibited a large light harvesting efficiency related to the maximum absorption wavelength (RLHE)) and, according to these results, the D-TDI-A derivatives containing the Ab and Ad fragments would be useful electron donor materials for further development of new small molecular organic photovoltaic solar cell (SM-OPV) devices. 相似文献
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The electronic and optical properties of SnSb4S7 compound are calculated by the full-potential linearized augmented plane-wave (FP-LAPW) method. The density of states (DOS) is carried out by the modified Becke-Johnson (mBJ) exchange potential approximation based on density functional theory (DFT). The compound SnSb4S7 has a monoclinic structure with the space group P21/m with lattice parameters of a=11.331 Å, b=3.865 Å and c=13.940 Å. The band gap is calculated to be 0.8 eV. The optical parameters, like dielectric constant, refractive index, reflectivity and energy loss function were also calculated and analyzed. The present work provides information about variation of the electronic and optical properties which reveals that SnSb4S7 is suitable for optoelectronic devices. 相似文献
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The structural, electronic, elastic and magnetic properties of gadolinium and its hydrides GdHx (x=1, 2, 3) are investigated by using Vienna ab-initio simulation package with the generalized gradient approximation parameterized by Perdew, Burke and Ernzerhof (GGA-PBE) plus a Hubbard parameter (GGA-PBE+U) in order to include the strong Coulomb correlation between localized Gd 4f electrons. At ambient pressure all the hydrides are stable in the ferromagnetic state. The calculated lattice parameters are in good agreement with the experimental results. The bulk modulus is found to decrease with the increase in the hydrogen content for the gadolinium hydrides. A pressure-induced structural phase transition is predicted to occur from cubic to hexagonal phase in GdH and GdH2 and from hexagonal to cubic phase in GdH3. The electronic structure reveals that mono and di-hydrides are metallic, whereas trihydride is half-metallic at normal pressure. On further increasing the pressure, a half-metallic to metallic transition is also observed in GdH3. The calculated magnetic moment values of GdHx (x=1, 2, 3) are in accord with the experimental values. 相似文献
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In the framework of density functional calculations and using the Linear Augmented Plane Waves with local orbital method (LAPW+lo), we have investigated the structural, electronic and optical properties of indium sulfoselenide (InS1−xSex). The present study confirms that InS1−xSex are indirect band gap materials. The non-linear dependence concentration x of the theoretical forbidden energy band is clearly visible and the microscopic origins of gap bowing are identified and calculated. In order to identify the angular momentum characteristics of the bands structure, the total and partial densities of states (DOS and PDOS) are analyzed. The feature bonding is also investigated from charge density study. Using the projected total densities of states (DOS) and the bands structure, we have calculated the linear optical properties, namely, the complex dielectric function ε(ω), refractive index n(ω), absorption coefficient α(ω) and the electron energy loss L(ω). In particular, we take into account the effect of Se composition on anisotropy, real part of the dielectric function and refractive index. The present alloy is found to be a challenging material in optoelectronic, medical and photovoltaic devices. Good agreements are found with the available experimental and theoretical results. 相似文献
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通过化学溶液沉积法制备的BiFeO3-BaTiO3薄膜在室温下能够同时显现铁电性和铁磁性。在600℃至700℃的条件下,以Pt/TiOx/SiO2/Si为载体,能够成功得到钙钛矿单相0.7BiFeO3-0.3BaTiO3薄膜。随着结晶温度上升,晶粒持续增长,最终在700℃时到达更高的结晶度。由于0.7BiFeO3-0.3BaTiO3薄膜的绝缘电阻较低,它所显现的极化(P)-电场(E)磁滞回线较弱。尽管如此,在0.7BiFeO3-0.3BaTiO3薄膜铁的位置上添加锰,高作用场的漏电流有效地减少,最终铁电性质得到了提高。在室温下,添加了摩尔分数5%的锰的0.7BiFeO3-0.3BaTiO3薄膜同时显现铁电极化和铁磁磁化磁滞回线。 相似文献
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The energy band structure and the optical response of the filled skutterudite CeRu4As12 have been studied using the full-potential linearized augmented plane wave (FP-LAPW) method within the local density approximation (LDA). The analysis of the region close to the Fermi energy level suggests the narrow band gap (0.18 eV) semiconducting nature of the material. The new approach of the exchange-correlation functional called the modified Becke Johnson potential used in the treatment of the material gives an enhanced band gap value of ~0.2 eV. The elastic parameters are also estimated at the ambient condition, which indicates the brittle nature of the studied material. The study of the optical spectra suggests the metallic behavior of the material in the far infrared region, which indicates that it acts as an opaque material with superluminal behavior in the ultraviolet frequency. 相似文献
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A series of thienoisoindigo (TII)-based dyes (TII 1–4) using different electron-donating moieties (D) and π-linkers were synthesized. The experimental results show that the maximum absorption band of TII 1–4 was located at 611–749 nm. Moreover, their absorption onset was extended to 741–901 nm that covers the near infrared (NIR) region. The bulk-heterojunction solar cell device fabricated by using TII 3/PC61BM as the active layer exhibited a power conversion efficiency (PCE) of 0.82%, showing the potential of TII-based dyes for NIR organic photovoltaics (OPVs). In order to study the structural effect of dyes on the PCE of solar cells, we further designed four TII-based dyes (TII 5–8) and the photophysical and photovoltaic properties for TII 1–8 were investigated through theoretical calculations. Calculated results demonstrate that carbazole group, whose has strong electron-donating ability than D moieties in this study, leads to generate long lifetime of the first excited state and whose generate large short-circuit current (Jsc). Thiophene group, whose has weak resonance energy than other π-linkers, can improve the π delocalization effect throughout whole molecule and generate large open-circuit voltage (Voc). According to these results, TII 3 and TII 8 with the carbazole as D moiety and thiophene as π-linker should be useful in development of a new SM-OPV device. 相似文献
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J. Canales‐Vzquez M.J. Smith J.T.S. Irvine W. Zhou 《Advanced functional materials》2005,15(6):1000-1008
Perovskite titanates with nominal stoichiometry ABO3+δ often exhibit quite interesting properties, but their structural characterization is not always rigorous. Herein, we demonstrate how excess oxygen can be incorporated in a titanate perovskite‐based lattice. A new family of layered perovskites La4Srn–4TinO3n+2 has been investigated by means of X‐ray diffraction, neutron diffraction, transmission electron microscopy, thermogravimetric analysis, and density and magnetic measurements. Such layered perovskites are known to be able to accommodate extra oxygen beyond the parental ABO3 perovskite in crystallographic shears. The structure evolves with increasing n. Firstly, the perovskite blocks become more extensive and the oxygen intergrowth layers move further apart; then the spacing between the intergrowth layers increases further and their repetition becomes more sporadic. Finally, the layered structure is lost for the n = 12 member (La2Sr4Ti6O19–δ). In this structure, excess oxygen is accommodated within the perovskite framework in randomly distributed short‐range linear defects. These defects become more dilute as the cubic perovskite, that is, n = ∞, composition is approached. 相似文献