退火温度对透明导电Ga_2O_3/ITO周期多层膜性能的影响

用射频磁控溅射Ga2O3陶瓷靶材和直流磁控溅射ITO靶材在石英玻璃衬底制备Ga2O3/ITO周期多层膜。样品在300~800℃真空退火1小时,研究退火温度对薄膜光学和电学性能的影响。400℃退火的Ga2O3/ITO周期多层膜面电阻和电阻率低至68.76Ω/□和3.47×10-3Ω·cm,载流子浓度和霍尔迁移率高达1.30×1020cm-3和14.02cm2 V-1s-1。退火温度超过500℃后,Ga2O3膜层和ITO膜层之间开始相互扩散,薄膜结晶质量和导电性变差。所有退火薄膜在紫外-可见光范围的平均光学透过率高于83%,光学带边吸收随退火温度增加发生蓝移,光学带隙从4.59eV增加到4.78eV。     

透明导电InSnGaMo氧化物薄膜光电性能研究

利用脉冲激光沉积法在石英衬底上制备出了可见光透过率高、电阻率极低的Ga,Mo共掺杂ITO基InSnGaMo复合氧化物薄膜。研究了衬底温度对薄膜结构、表面形貌、光电性能的影响。实验结果表明:衬底温度对InSnGaMo复合氧化物薄膜形貌、光电性能均有很大影响。X射线衍射、扫描电镜和霍尔测试结果表明,随着衬底温度的升高,薄膜晶粒度增大,电阻率快速下降,可见光平均透过率明显提高。当衬底温度为450℃时,InSnGaMo复合氧化物薄膜的电阻率最低为4.15×10-4Ω.cm,载流子浓度和迁移率最大分别为3×1020cm-3,45 cm2V-1s-1,在可见及近红外区平均透过率达92%,特别地,波长为362 nm时,最高透射率可达99%。     

退火处理对掺锑Zn-Sn-O薄膜的特性的影响

首次在低温下采用磁控射频溅射技术在玻璃衬底上制备出具有多晶结构的掺锑锌-锡-氧(Zn-Sn-O:Sb)透明导电膜.研究了在通氧气氛制备薄膜的特性以及退火处理对制备薄膜结构和光电性能的影响.经真空退火后,氩氧混合气体溅射制备的Zn-Sn-O:Sb透明导电膜的最小电阻率为4×10-2Ω·cm,相应载流子浓度和霍尔迁移率分别为2.1×1019cm-3,8cm2·V-1·s-1.薄膜的可见光平均透过率达到了92.4%.薄膜具有较高的热稳定性和化学稳定性,对玻璃衬底有良好的附着性.     

沉积温度对IMO透明导电薄膜光电性能的影响

采用射频磁控反应溅射法在K9玻璃衬底上制备了掺钼氧化铟(Mo:In2O3,IMO)透明导电薄膜,研究了不同沉积温度条件下IMO薄膜的晶体结构、形貌及光电性能。结果表明:不同沉积温度下IMO薄膜均具有(222)择优取向。随着沉积温度的升高,IMO薄膜的载流子浓度增大、载流子迁移率增大、电阻率减小;沉积温度为350℃时,薄膜的最低电阻率为6.9×10-4Ω.cm,载流子浓度为2.15×1020cm-3,迁移率为45 cm2V-1s-1。在可见及近红外区,IMO薄膜的平均透过率大于80%以上。在近红外区,薄膜透过率随沉积温度的升高而增大;在中红外区,由于载流子的吸收,薄膜透过率迅速下降。     

掺钼氧化锌透明导电薄膜光学性质研究

采用直流磁控反应溅射制备了掺钼氧化锌透明导电薄膜。研究了掺钼氧化锌薄膜的结构、表面形貌及其光学和电学性能。原子力显微镜扫描显示薄膜表面较为平整致密。制备出的掺钼氧化锌薄膜最低电阻率为9.4×10-4Ω.cm,相应载流子迁移率为27.3cm2V-1s-1,载流子浓度为3.1×1020cm-3。在可见光区域的平均透射率大于85%,折射率(550nm)为1.853,消光系数为7.0×10-3。通过调节氧分压可以调节薄膜载流子浓度,禁带宽度随载流子浓度的增加由3.37增大到3.8eV,薄膜的载流子有效质量m*为0.33倍的电子质量。     

功率和退火对磁控溅射生长ZnO∶Ga薄膜的影响

采用射频磁控溅射法在玻璃衬底上制备了ZnO∶Ga透明导电薄膜(GZO)。通过X射线衍射(XRD)、四探针电导率测试、紫外可见分光光度等表征方法研究了溅射功率对薄膜结晶特性及光电性能的影响。结果表明:当溅射功率180W时制备的GZO薄膜光电性能最优,方块电阻为9.8Ω/sq,电阻率为8.6×10-4Ω·cm,霍尔迁移率为12.5cm2/V·s,载流子浓度为5.8×1020cm-3,可见光透过率超过92%。另外,研究了最优制备条件下的GZO薄膜的高温稳定性,在氩气、氧气和真空气氛下分别对薄膜进行退火处理。结果表明,氩气退火的薄膜电学性能显著提高,是显著改善GZO薄膜性能的有效方法之一;氧气退火不利于薄膜的导电性;真空退火介于两者之间。     

退火温度对铜铟镓硒薄膜电学性能的影响

使用磁控溅射铜铟镓硒(CuIn1-xGaxSe2,CIGS)四元陶瓷靶材制备沉积态预制膜,在240-550℃对预制膜进行退火处理,着重研究了退火温度对薄膜电学性能(载流子浓度及迁移率)的影响。结果表明:退火温度低于270℃时薄膜中存在CuSe低电阻相,CIGS薄膜的载流子浓度在1017-1019cm-3,迁移率在0.1 cm2·V-1·s-1左右,不适于作为太阳电池的吸收层;当退火温度高于410℃时薄膜中不存在CuSe相,薄膜具有10 cm2·V-1·s-1左右的较高迁移率,载流子浓度在1014-1017cm-3;退火温度高于410℃时,随着退火温度的升高薄膜晶粒长大,结晶性增强,此时薄膜内部缺陷减少,载流子浓度升高;对于用作太阳电池吸收层的CIGS,从载流子浓度及迁移率的角度评判,合适的退火温度区间为450-550℃。     

工作气压对室温溅射柔性AZO薄膜性能的影响

采用射频磁控溅射法在PEN衬底上室温制备了AZO薄膜,并对不同工作气压下(0.05～0.4Pa)沉积薄膜的结构及光电性能进行了研究。结果表明,薄膜具有良好的c轴择优取向,随工作气压增大,薄膜(002)峰强度减弱,晶粒减小,表面粗糙度增大,电学性能下降,薄膜可见光透过率变化不大,但禁带宽度变窄。与玻璃衬底相比,PEN衬底上沉积的AZO薄膜拥有更高的品质因数,获得的最佳电阻率、载流子浓度和霍尔迁移率分别为1.11×10-3Ω.cm、4.14×1020cm-3和13.60cm2/(V.s),该薄膜可见光的绝对透射率达到95.7%。     

直流磁控溅射工艺参数对掺钨氧化铟透明导电薄膜性能影响的研究

采用直流磁控溅射法制备了掺钨氧化铟(IWO)透明导电薄膜。研究了薄膜结构、表面形貌、光学和电学性能与各种制备参数之间的依赖关系。X射线衍射(XRD)谱分析结果表明随着基底温度的升高,薄膜的结晶性得到改善。原子力显微镜(AFM)测试结果表明薄膜颗粒均匀,表面平整。研究发现薄膜的电学性能对制备参数非常敏感。在基板温度为380℃的条件下所制备的样品在可见光区域(400~700 nm)的平均透射率(未扣除基底)均大于80%。获得的IWO薄膜最低电阻率为2.8×10-4 ohm.cm,对应载流子迁移率49 cm2V-1s-1,载流子浓度4.4×1020 cm-3,平均透射率83%。     

射频反应磁控溅射法制备N掺杂p型氧化亚铜薄膜

通过射频反应磁控溅射方法在玻璃衬底上制备N掺杂的Cu2O薄膜,采用X射线衍射、分光光度计、X射线光电子能谱和霍尔效应等检测,研究了氮气掺杂对Cu2O薄膜性能的影响。结果表明:随着N原子的掺入,薄膜的结晶质量下降,光学带隙从2.28 eV升至2.47 eV左右,同时薄膜的电学性能趋于稳定。当N2/O2流量比率为0.6时,薄膜电阻率为1.5Ω.cm,空穴浓度为2.16×1019cm-3,霍尔迁移率为0.5 cm2.V-1.s-1。     

Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering

Highly conducting and transparent ZnO : Al thin films were grown by off-axis rf magnetron sputtering on amorphous silica substrates without any post-deposition annealing. The electrical and optical properties of the films deposited at various substrate temperatures and target to substrate distances were investigated in detail. Optimized ZnO : Al films have conductivity of 2200 S cm^-1 and average transmission in the visible range is higher than 85%. The conductivity and mobility show very little temperature dependence.     

Influence of Al concentration on structural and optical properties of Al-doped ZnO thin films

Undoped ZnO and Al-doped zinc oxide (ZnO:Al) thin films with different Al concentrations were prepared onto Si (100) substrate by pulsed filtered cathodic vacuum arc deposition system at room temperature. The influence of doping on the structural and optical properties of thin films was investigated. The preferential (002) orientation was weakened by high aluminum doping in films. Raman measurement was performed for the doping effects in the ZnO. Atomic force microscopy images revealed that the surface of undoped ZnO film grown at RT was smoother than that of the Al-doped ZnO (ZnO:Al) films. The reflectance of all films was studied as a function of wavelength using UV–Vis–NIR spectrophotometer. Average total reflectance values of about 35 % in the wavelength range of 400–800 nm were obtained. Optical band gap of the films was determined using the reflectance spectra by means of Kubelka–Munk formula. From optical properties, the band gap energy was estimated for all films.     

Annealing effects of sapphire substrate on the structure and properties of ZnO films grown via pulsed laser deposition

The structure, morphology, and properties of ZnO films were examined in relation to an annealed sapphire substrate prepared via pulsed laser deposition. The annealing effects of the sapphire substrate on the ZnO films were studied via X-ray diffraction (XRD), atomic-force microscopy (AFM), and photoluminescence (PL) measurements. The XRD patterns and PL spectra results showed that the optical quality of the ZnO films was significantly affected by the annealing temperature of the sapphire substrate. The optimum annealing temperature of the sapphire substrate was 1400 degrees C. Atomically-flat-surface and high-density atomic steps were formed after annealing treatment, which were qualified to be good nucleation sites for ZnO film growth.     

Structural and optical properties of ZnO films grown on the AAO templates

Structural and optical properties of ZnO films grown on Al substrate and anodic alumina oxide (AAO) templates by rf magnetron reactive sputtering deposition were investigated using X-ray diffraction (XRD), atomic-force microscope (AFM) and photoluminescence (PL). We found that ZnO thin films on Al substrate show good C-axis orientation, while the orientation of ZnO film on AAO templates is disordered, this due to the fact that the crystalline of ZnO is greatly influenced by surface morphology of substrates. PL measurements show a blue band in the wavelength range of 400–500 nm caused by the interstitial Zn in the ZnO films. The intensity of emission peak of ZnO films deposited on AAO templates increases compared with that on the Al substrate. Combining electrical resistivity and carrier concentration measurements, we found that that the blue emission intensity is consistent with the concentration for the interstitial zinc in the ZnO films.     

Effect of annealing temperature on ZnO:Al/p-Si heterojunctions

Al-doped, zinc oxide (ZnO:Al) films with a 1.2 at.% Al concentration were deposited on p-type silicon wafers using a sol-gel dip coating technique to produce a ZnO:Al/p-Si heterojunction. Following deposition and subsequent drying processes, the films were annealed in vacuum at five different temperatures between 550 and 900 °C for 1 h. The resistivity of the films decreased with increasing annealing temperature, and an annealing temperature of 700 °C provided controlled current flow through the ZnO:Al/p-Si heterojunction up to 20 V. The ZnO:Al film deposited on a p-type silicon wafer with 1.2 at.% Al concentration was concluded to have the potential for use in electronic devices as a diode after annealing at 700 °C.     

Structure, luminescence and electrical properties of ZnO thin films annealed in H2 and H2O ambient: A comparative study

Undoped ZnO films were grown on a c-plane sapphire by plasma-assisted molecular-beam epitaxy technique, and subsequently annealed at 200-500 °C with steps of 100 °C in water vapour and hydrogen ambient, respectively. It is found that the c-axis lattice constant of the ZnO films annealed in hydrogen or water vapour at 200 °C increases sharply, thereafter decreases slowly with increasing annealing temperature ranging from 300 °C to 500 °C. The stress in the as-grown ZnO films was more easily relaxed in water vapour than in hydrogen ambient. Interestingly, the controversial luminescence band at 3.310 eV, which is often observed in photoluminescence (PL) spectra of the ZnO films doped by p-type dopants, was observed in the PL spectra of the annealed undoped ZnO films and the PL intensity increases with increasing annealing temperature, indicating that the 3.310 eV band is not related to p-type doping of ZnO films. The electron concentration of the ZnO films increases sharply with increasing annealing temperature when annealed in hydrogen ambient but decreases slowly when annealed in water vapour. The mechanisms of the effects of annealing ambient on the properties of the ZnO films are discussed.     

溶胶-凝胶法制备ZnO薄膜及其光催化性能

用溶胶-凝胶法在普通玻璃表面制备了薄膜型ZnO光催化剂,通过XRD、Ab2d、UV-VIS等测试技术对ZnO薄膜进行了表征;以偶氮胭脂红为降解物,考察了薄膜退火温度、镀膜层数、溶液初始质量浓度和反应体系初始pH值对ZnO薄膜光催化性能的影响,并进行了相关机理的探讨．研究表明：溶胶-凝胶法制备的ZnO薄膜呈透明状,薄膜表面均匀分布着球形ZnO晶粒;随着退火温度的升高,ZnO晶粒在17～30mm范围内逐渐增大．光催化实验中ZnO薄膜光催化降解偶氮胭脂红的最佳工艺条件是：退火温度为300℃,镀膜层数为5层,溶液初始pH值为8～9．     

Growth and characterization of indium phosphide nanowires on transparent conductive ZnO:Al films

The epitaxial growth of indium phosphide nanowires (InP NWs) on transparent conductive aluminum-doped zinc oxide (ZnO:Al) thin films is proposed and demonstrated. ZnO:Al thin films were prepared on quartz substrates by radio frequency magnetron sputtering, then InP NWs were grown on them by plasma enhanced metal organic chemical vapor deposition with gold catalyst. Microstructure and optical properties of InP nanowires on ZnO:Al thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectric spectroscopy (XPS), photoluminescence and Raman spectroscopy at room temperature. SEM shows that randomly oriented and intersecting InP nanowires were grown to form a network on ZnO:Al thin films. Both wurtzite (WZ) and zincblende (ZB) structures coexist in the random orientation InP NWs on ZnO:Al thin film had been proved by XRD analysis. XPS result indicates Zn diffusion exists in the InP NWs on ZnO:Al. The photoluminescence spectra of InP nanowires with Zn diffusion present an emission at 915 nm. Zn diffusion also bring effect on Raman spectra of InP NWs, leading to more Raman-shift and larger relative intensity ratio of TO/LO.     

Optical properties of ZnO thin film on γ-LiAlO2 substrate grown by pulsed laser deposition

Optical properties were investigated of ZnO thin films grown on (100) γ-LiAlO₂ (LAO) substrates by pulsed laser deposition method. C-axis oriented ZnO film was grown on (100) LAO substrate at the substrate temperature of 550 °C. The transmittances of the films were over 85%. Peaks attributed to excitons were seen in the absorption spectra, indicating that the thin films have high crystallinity. Photoluminescence spectra were observed at room temperature; the peak at 550 nm is ascribed to oxygen vacancies in the ZnO films caused by the diffusion of Li from the substrate into the film during deposition.     

影响磁控溅射制备PST/Si薄膜介电特性的几个因素

采用磁控溅射制备了Si基(Pb1-xSrx)TiO3(简称PST/Si)薄膜。测试表明,热处理工艺对PST/Si薄膜介电特性有着一定的影响,适当温度、适当时间的热处理可得到均匀致密的膜层及生长良好的晶粒,从而确保PST薄膜良好的介电特性。样品上电极材料对介电特性也有重要影响。Al较Au电极易氧化,从而易在其与PST薄膜的界面形成一氧化层,增加了串联电阻,导致介电损耗总体上要低。工作频率对材料的介电弛豫特性及漏电导等也会产生影响。