Vacancies in as-grown CZ silicon crystals observed by low-temperature ultrasonic measurements

By means of the low-temperature ultrasonic measurement, we try to observe the elastic softening due to the vacancies in as-grown silicon crystals grown by the Czochralski (CZ) method. We prepared a high-resistivity CZ silicon crystal ingot comprising the following defect-regions: the void region, the region of ring-like oxidation stacking fault, the Pv-region, the Pi-region, and the region of the dislocation clusters. Both of the elastic constants C ₄₄(T) and [C ₁₁(T) ? C ₁₂(T)]/2 measured for the samples taken from the Pv-region exhibit the softening of the type C _Γ(T) = C _Γ ⁽⁰⁾ [1 ? Δ_JT/(T ? Θ)] which was also found in our previous study for the non-doped FZ silicon and attributed to the neutral vacancy. No response of the softening to the applied magnetic field is found, as in our previous case of the non-doped FZ silicon. The observed softenings are attributed to the triply degenerate T ₂ states of the vacancy accommodating two electrons with anti parallel spins. The samples in the Pi-region exhibit no such softening, confirming that the origin of the softening is the vacancies. A qualitative explanation is given to the measured distribution of the vacancy concentration.     

Characteristics of Superconducting State in Vanadium: the Eliashberg Equations and Semi-analytical Formulas

The superconducting state in vanadium characterizes with the critical temperature (T _c ) equal to 5.3 K. The Coulomb pseudopotential, calculated with the help of the Eliashberg equations, possesses anomalously high value μ ^?(3Ω_max) = 0.259 or μ ^?(10Ω_max) = 0.368 (Ω_max denotes the maximum phonon frequency). Despite the relatively large electron-phonon coupling constant (λ = 0.91), the quantities such as the order parameter (Δ), the specific heat (C), and the thermodynamic critical field (H _c ) determine the values of the dimensionless ratios not deviating much from the predictions of the BCS theory: R _Δ = 2Δ(0)/k _B T _c = 3.68, R _C = ΔC(T _c ) /C ^N (T _c ) = 1.69, and \(R_{H}=T_{c}C^{N}\left (T_{c}\right )\slash {H^{2}_{c}}\left (0\right )=0.171\). This result is associated with the reduction of the strong-coupling and the retardation effects by the high value of the Coulomb pseudopotential. It has been shown that the results of the Eliashberg formalism can be relatively precisely reproduced with the help of the semi-analytical formulas, if the value of μ ^? is determined on the basis of the T _c -Allen-Dynes expression (μ A D? = 0.198). The attention should be paid to the fact that in the numerical and in the semi-analytical approach the comparable values of the thermodynamic parameters for the same μ ^? have been obtained only in the vicinity of the point μ ^? = 0.1.     

Structural relaxation and electrical conductivity of molybdovanadate glass

⁵⁷Fe Mössbauer spectrum of conductive barium iron vanadate glass with a composition of 20BaO·10Fe₂O₃·70V₂O₅ (in mol%) showed paramagnetic doublet peak due to distorted Fe^IIIO₄ tetrahedra with isomer shift (δ) value of 0.37 (±?0.01) mm s^?1. Mössbauer spectra of 20BaO·10Fe₂O₃·xMoO₃·(70???x)V₂O₅ glasses (x?=?20–50) showed paramagnetic doublet peaks due to distorted Fe^IIIO₆ octahedra with δ’s of 0.40–0.41 (±?0.01) mm s^?1. These results evidently show a composition-dependent change of the 3D-skeleton structure from “vanadate glass” phase, composed of distorted VO₄ tetrahedra and VO₅ pyramids, to “molybdate glass” composed of distorted MoO₆ octahedra. After isothermal annealing at 500 °C for 60 min, Mössbauer spectra also showed a marked decrease in the quadrupole splitting (Δ) of Fe^III from 0.70 to 0.77 to 0.58–0.62 (±?0.02) mm s^?1, which proved “structural relaxation” of distorted VO₄ tetrahedra which were randomly connected to FeO₄, VO₅, MoO₆, FeO₆ and MoO₄ units by sharing corner oxygen atoms or edges. DC-conductivity (σ) of barium iron vanadate glass (x?=?0) measured at room temperature was 3.2?×?10^?6 S cm^?1, which increased to 3.4?×?10^?1 S cm^?1 after the annealing at 500 °C for 60 min. The σ’s of as-cast molybdovanadate glasses with x’s of 20–50 were ca. 1.1?×?10^?7 or 1.2?×?10^?7S cm^?1, which increased to 2.1?×?10^?2 (x?=?20), 6.7?×?10^?3 (x?=?35) and 1.9?×?10^?4 S cm^?1 (x?=?50) after the annealing at 500 °C for 60 min. It was concluded that the structural relaxation of distorted VO₄ tetrahedra was directly related to the marked increase in the σ, as generally observed in several vanadate glasses.     

Thermal stability and fire behavior of aluminum diethylphosphinate-epoxy resin nanocomposites

The flame retardancy of 2, 2-bis(4-glycidyloxyphenyl)propane (DGEBA)-aluminum diethylphosphinate (AlPi) nanocomposites (EP-AlPi/(P ? x), x = 1, 2, 3 %) was greatly enhanced by ultrasonic dispersion of nano-sized AlPi into epoxy resin. The UL 94 V-0 rating can be reached for EP-AlPi nanocomposites with a relatively low addition amount of AlPi (on the account of 8.4 wt% or phosphorus content of 2 wt%) as well as the LOI value over 37.2. The glass transition temperature (T _g) enhanced properties were investigated by DTA, which showed that: T _gs were about 5 °C higher than that of neat epoxy resin; T _g increased along with content increasing of AlPi. Based on TGA results under a non-isothermal condition, the thermal degradation kinetics of EP-AlPi/(P ? x) composites were studied by Kissinger’s, Ozawa’s, Flynn–Wall–Ozawa’s and Coast-Redfern’s methods, which suggested the conversion function f (α) = 1/2α ^?1 or f (α) = [?ln(1 ? α)]^?1 for EP-AlPi/(P ? 1 %); f (α) = [?ln(1 ? α)]^?1 for EP-AlPi/(P ? 2 %) and EP-AlPi/(P ? 3 %) during the investigated process. The epoxy resin nanocomposites obtained in this study are green functional polymers and will become flame retardant potential candidates in electronic fields such as printed wiring boards with high performance.     

Good electrical performances and impedance analysis of (1 − <Emphasis Type="Italic">x</Emphasis>)KNN–<Emphasis Type="Italic">x</Emphasis>BMM lead-free ceramics

(1 ? x)(K_0.5Na_0.5)NbO₃–xBi(Mg_0.75Mo_0.25)O₃ [(1 ? x)KNN–xBMM] (x?=?0.005, 0.01, 0.02) ceramics were prepared via a solid-state reaction method. X-ray diffraction patterns (XRD) and Raman spectrum showed that a solid solution was formed between the BMM and KNN, which improved the electrical properties of KNN. With increasing the BMM content, the grain firstly increased and then decreased. When x?=?0.01, the ceramics exhibited the optimized microstructure, indicating that there exits an optimal doping component. Temperature dependence of relative permittivity also increases firstly and then decreases. The relative permittivity (ε_r) of ~?1418 in stabilization zone, ε_max?~?4861 at the Curie temperature T _C ~ 394 °C, good temperature stability ?ε/ε_123 °C?≤?±?15% from 123 °C to 348 °C, and the dielectric loss tanδ?≤?0.036 from 109 to 348 °C were obtained for 0.99KNN-0.01BMM ceramics. Conductivity behavior of the (1 ? x)KNN–xBMM was investigated as a function of temperature from 420 to 520 °C and frequency from 40 to 106 Hz, showing that the basic mechanisms of conduction and relaxation processes were thermally activated, and oxygen vacancies were the possible ionic charge transport carriers at higher temperatures.     

How much is a quantum controller controlled by the controlled system?

We consider unitary transformations on a bipartite system A × B. To what extent entails the ability to transmit information from A to B the ability to transfer information in the converse direction? We prove a dimension-dependent lower bound on the classical channel capacity C(A ← B) in terms of the capacity C(A → B) for the case that the bipartite unitary operation consists of controlled local unitaries on B conditioned on basis states on A. If the local operations are given by the regular representation of a finite group G we have C(A → B) = log |G| and C(A ← B) = log N where N is the sum over the degrees of all inequivalent representations. Hence the information deficit C(A → B) ? C(A ← B) between the forward and the backward capacity depends on the “non-abelianness” of the control group. For regular representations, the ratio between backward and forward capacities cannot be smaller than 1/2. The symmetric group S _n reaches this bound asymptotically. However, for the general case (without group structure) all bounds must depend on the dimensions since it is known that the ratio can tend to zero. Our results can be interpreted as statements on the strength of the inevitable backaction of a quantum system on its controller.     

Effect of sintering temperature on microstructures and microwave dielectric properties of Ba<Subscript>2</Subscript>MgWO<Subscript>6</Subscript> ceramics

The microwave dielectric properties of Ba₂MgWO₆ ceramics were investigated with a view to the use of such ceramics in mobile communication. Ba₂MgWO₆ ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (? _r ) of 16.8–18.2 and unloaded quality factor (Q _u  × f) of 7000–118,200 GHz were obtained at sintering temperatures in the range 1450–1650 °C for 2 h. A maximum apparent density of 6.76 g/cm³ was obtained for Ba₂MgWO₆ ceramic, sintered at 1650 °C for 2 h. A dielectric constant (? _r ) of 18.4, an unloaded quality factor (Q _u  × f) of 118,200 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?34 ppm/°C were obtained when Ba₂MgWO₆ ceramics were sintered at 1650 °C for 2 h.     

Effect of inter-electrode spacing on structural and electrical properties of RF sputtered AlN films

An attempt has been made to correlate the morphological and electrical properties of RF sputtered aluminum nitride (AlN), with target to substrate distance (D _ts) in sputter chamber. AlN films, having thickness around 3,000 Å, were deposited on silicon substrates with different D _ts values varying from 5 to 8 cm. XRD results indicated that the crystallinity of c-axis oriented films increase significantly with decrease in D _ts and the FTIR absorption band of the films became prominent at shorter D _ts. The surface roughness increased from 1.85 to 2.45 nm with that in D _ts. A smooth surface with smaller grains was found at shorter D _ts. The capacitance–voltage (C–V) measurements revealed that the insulator charge density (Q _in) increased from 3.3 × 10¹¹  to 7.3 × 10¹¹ cm^?2 and the interface state density (D _it) from 1.5 × 10¹¹  to 7.3 × 10¹¹ eV^?1cm^?2 with the increase in D _ts.     

Microwave dielectric properties of Sr<Subscript>0.7</Subscript>Ce<Subscript>0.2</Subscript>TiO<Subscript>3</Subscript>–Sr(Mg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> ceramics

xSr_0.7Ce_0.2TiO₃–(1???x)Sr(Mg_1/3Nb_2/3)O₃ ceramics, referred to xSCT–(1???x)SMN, were successfully produced by conventional solid-state sintered technology. The compounds, belonging to perovskites with a secondary phase of CeO₂, can be detected even with x down to 0.1 of SCT composition. The overall trend for grain growth illustrates the increase with increasing SCT doping level. The Raman peak at 825 cm^?1 splits into two peaks and causes red shift phenomenon. XPS spectra indicate that Ti and Nb ions exist respectively in tetravalence and pentavalence, and Ce ions exist in trivalence and tetravalence. Dielectrics constant (ε _r ) of SCT–SMN ceramics gradually increases with increasing theoretical dielectric polarizabilities. A wider width of the 825 cm^?1 for FWHM of A_1g mode Raman peaks suggests to a lower Q?×?f value. The increasing tolerance factor in agreement with temperature coefficient of resonant frequency (τ _f ), denotes that the rise of perovskite symmetry. The 0.1SCT–0.9SMN ceramic sintered at 1450?°C for 4 h illustrates excellent microwave dielectric properties with ε _r ?~?35.4, Q?×?f?~?11282 GHz and τ _f ?~?1.7 ppm/°C. Activation energies of 0.1SCT–0.9SMN ceramic at 100, 300 and 500 V, are ~0.436, 0.427 and 0.331 eV, respectively, indicative of a decreased trend with external electric field.     

Very high thermal stability with excellent dielectric,and non-ohmics properties of Mg-doped CaCu<Subscript>3</Subscript>Ti<Subscript>4.2</Subscript>O<Subscript>12</Subscript> ceramics

In this work, the nominal CaCu_3?xMg_xTi_4.2O₁₂ (0.00, 0.05 and 0.10) ceramics were prepared by sintering pellets of their precursor powders obtained by a polymer pyrolysis solution method at 1100 °C for different sintering time of 8 and 12 h. Very low loss tangent (tanδ)?<?0.009–0.014 and giant dielectric constant (ε′) ～?1.1?×?10⁴–1.8?×?10⁴ with excellent temperature coefficient (Δε′) less than ±?15% in a temperature range of ??60 to 210 °C were achieved. These excellent performances suggested a potent application of the ceramics for high temperature X8R and X9R capacitors. It was found that tanδ values decreased with increasing Mg²⁺ dopants due to the increase of grain boundary resistance (R_gb) caused by the very high density of grain, resulting from the substitution of small ionic radius Mg²⁺ dopants in the structure. In addition, CaCu_3?xMg_xTi_4.2O₁₂ ceramics displayed non-linear characteristics with the significant enhancements of a non-linear coefficient (α) and a breakdown field (E_b) due to Mg²⁺doping. The high values of ε′ (14012), α (13.64) and E_b (5977.02 V/cm) with very low tanδ value (0.009) were obtained in a CaCu_2.90Mg_0.10Ti_4.2O₁₂ ceramic sintered at 1100 °C for 8 h.     

Study of the Magnetic Properties of Ni/Ag Superlattice

Thin multilayer films of alternating ultrathin Ni and Ag layers (L(Ni)=11,15,30 Å, bulk and \(L(\mathrm{Ag})=50~{\AA})\) have been prepared by evaporation in ultrahigh vacuum under controlled conditions and have been studied by the magnetic measurements. The critical temperature T _C is studied as a function of the surface exchange interaction (J _S). The dependence of T _C on the thickness L of the film has been investigated. A critical value of the surface exchange interaction in the film, above which the surface magnetism appears, is obtained. The shift of the critical temperature T _C(L) from the bulk value \([\frac{T_{\mathrm{C}}(\infty )}{T_{\mathrm{C}}(L)}-1]\) can be described by a power law L ^?λ , where \(\lambda =\frac{1}{\nu_{\mathrm{b}}}\) is the inverse of the correlation length’s exponent. The effective critical exponent associated with the magnetization M(β) is deduced for different thicknesses of Ni layers, and the thickness L(Ag) was being kept constant at 50 Å.     

Crystal structure,microstructure and microwave dielectric properties of novel MgAl<Subscript>2</Subscript>Ti<Subscript>3</Subscript>O<Subscript>10</Subscript> ceramic

In the present work, a novel MgAl₂Ti₃O₁₀ ceramic was obtained using a traditional solid-state reaction method. X-ray diffraction and energy dispersive spectrometer showed that the main MgAl₂Ti₃O₁₀ phase was formed after sintered at 1300–1450 °C. With rising the sintering temperature from 1300 to 1450 °C, the bulk density (ρ), relative permittivity (ε _r ) and Q?×?f value firstly increased, reached the maximum values (3.61 g/cm³, 14.9, and 26,450 GHz) and then decreased. The temperature coefficient of resonator frequency (τ _f ) showed a slight change at a negative range of ??94.6 to ??83.7 ppm/°C. When the sintering temperature was 1400 °C, MgAl₂Ti₃O₁₀ ceramics exhibited the best microwave dielectric properties with Q?×?f?=?26,450 GHz, ε _r ?=?14.9 and τ _f ?=???83.7 ppm/°C.     

Temperature dependence of characteristic parameters of the Au/C<Subscript>20</Subscript>H<Subscript>12</Subscript>/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Au/C₂₀H₁₂/n-Si SBD was fabricated and its characteristic parameters such as reverse-saturation current (I_o), ideality factor (n), zero-bias barrier height (Φ_bo), series and shunt resistances (R_s, R_sh) were found as 1.974 × 10^?7 A, 6.434, 0.351 eV, 30.22 Ω and 18.96 kΩ at 160 K and 1.061 × 10^?6 A, 2.34, 0.836 eV, 5.82 Ω and 24.52 kΩ at 380 K, respectively. While the value of n decreases with increasing temperature, Φ_bo increases. The change in Φ_bo with temperature is not agreement with negative temperature coefficient of forbidden band-gap of semiconductor (Si). Thus, Φ _bo versus n, Φ _bo and (n^?1 ? 1) versus q/2kT plots were drawn to obtain an evidence of a Gaussian distribution (GD) of the BHs and all of them have a straight line. The mean value of BH (\( \overline{\varPhi }_{bo} \)) was found as 0.983 eV from the intercept of Φ _bo versus n plot (for n = 1). Also, the value of \( \overline{\varPhi }_{bo} \) and standard deviation (σ_s) were found as 1.123 eV and 0.151 V from the slope and intercept of Φ_bo versus q/2kT plot. By using the modified Richardson plot, the \( \overline{\varPhi }_{bo} \) and Richardson constant (A*) values were obtained as 1.116 eV and 113.44 A cm^?2 K^?2 from the slope and intercept of this plot, respectively. It is clear that this value of A* (=113.44 A cm^?2 K^?2) is very close to their theoretical value of 112 A cm^?2 K^?2 for n-Si. In addition, the energy density distribution profile of surface states (D_it) was obtained from the forward bias I–V data by taking into account the bias dependent of the effective barrier height (Φ _e ) and ideality factor n(V) for four different temperatures (160, 200, 300, and 380 K). In conclusion, the I–V–T measurements of the Au/C₂₀H₁₂/n-Si SBD in the whole temperature range can be successfully explained on the basis of thermionic emission (TE) theory with GD of the BHs.     

Visible-light-induced hydrogen evolution reaction with WS<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Se<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>

WS₂ is a promising catalyst for the hydrogen evolution reaction. We have explored photocatalytic properties of ternary sulphoselenides of tungsten (WS _x Se _2?x ) by the dye-sensitized hydrogen evolution. WS _x Se _2?x solid solutions are found to exhibit high activity reaching 2339 μmol h^?1 g^?1 for WSSe, which is three times higher than that of WS₂ alone (866 μmol h^?1 g^?1 ). The turnover frequency is also high (0.7 h^?1 ). Such synergistic effect of selenium substitution in WS₂ is noteworthy.     

Experimental Study of the Thermodynamic Properties of Diethyl Ether (DEE) at Saturation

The isochoric heat capacities \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\), saturation densities (\({\rho _{\rm S}^{\prime}}\) and \(({\rho_{\rm S}^{\prime\prime})}\)), vapor pressures (P _S), thermal-pressure coefficients \({\gamma_V=\left({\partial P/\partial T}\right)_V}\), and first temperature derivatives of the vapor pressure γ _S = (dP _S/dT) of diethyl ether (DEE) on the liquid–gas coexistence curve near the critical point have been measured with a high-temperature and high-pressure nearly constant-volume adiabatic piezo-calorimeter. The measurements of \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\) were made in the liquid and vapor one- and two-phase regions along the coexistence curve. The calorimeter was additionally supplied with a calibrated extensometer to accurately and simultaneously measure the PVT, C _V VT, and thermal-pressure coefficient, γ _V , along the saturation curve. The measurements were carried out in the temperature range from 416 K to 466.845 K (the critical temperature) for 17 liquid and vapor densities from 212.6 kg · m^?3 to 534.6 kg · m^?3. The quasi-static thermo- (reading of PRT, T ? τ plot) and baro-gram (readings of the tensotransducer, P ? τ plot) techniques were used to accurately measure the phase-transition parameters (P _S ,ρ _S ,T _S) and γ _V . The total experimental uncertainty of density (ρ _S), pressure (P _S), temperature (T _S), isochoric heat capacities \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\), and thermal-pressure coefficient, γ _V , were estimated to be 0.02 % to 0.05 %, 0.05 %, 15 mK, 2 % to 3 %, and 0.12 % to 1.5 %, respectively. The measured values of saturated caloric \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\) and saturated thermal (P _S, ρ _S, T _S) properties were used to calculate other derived thermodynamic properties C _P , C _S, W, K _T , P _int, ΔH _vap, and \({\left({\partial V/\partial T}\right)_P^{\prime}}\) of DEE near the critical point. The second temperature derivatives of the vapor pressure, (d² P _S/dT ²), and chemical potential, (d² μ/dT ²), were also calculated directly from the measured one- and two-phase liquid and vapor isochoric heat capacities \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\) near the critical point. The derived values of (d² P _S/dT ²) from calorimetric measurements were compared with values calculated from vapor–pressure equations. The measured and derived thermodynamic properties of DEE near the critical point were interpreted in terms of the “complete scaling” theory of critical phenomena. In particular, the effect of a Yang–Yang anomaly of strength R _μ on the coexistence-curve diameter behavior near the critical point was studied. Extended scaling-type equations for the measured properties P _S (T), ρ _S (T), and \({({C_{V1}^{\prime}} ,{C_{V1}^{\prime\prime}},{C_{V2}^{\prime}},{C_{V2}^{\prime\prime}})}\) as a function of temperature were developed.     

Structure,electrical and magnetic properties of La<Subscript>0.67</Subscript>Ca<Subscript>0.33−<Emphasis Type="Italic">x</Emphasis></Subscript>K<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> polycrystalline ceramic

A systematic investigation of structure, electrical and magnetic properties of polycrystalline ceramics La_0.67Ca_0.33?x K _x MnO₃ (x?=?0.05, 0.10, 0.15, 0.20, 0.25) samples, prepared by sol–gel method had been undertaken. As K content increases the crystal structures were transformed from orthorhombic to rhombohedral structure identified by X-ray diffraction, and the effect of increasing K ion is to increment the Mn–O–Mn bond angle. The surface morphology was investigated by scanning electron microscope, which indicates that grain size decreasing with increasing of K⁺. Temperature dependence of resistivity (ρ ? T) was measured by standard four-probe method. The insulator–metal transition temperature (T _P ) shifted to higher temperature and the temperature coefficient of resistivity decreased sharply with the substitution K⁺ for Ca²⁺ ion. The temperature dependence of magnetization (M–T) shown that Curie temperature (T _C ) was increasing with the increase of K content, which can be explained by enhancement of double–exchange interaction. The data of resistivity on low-temperature (T?<?T _P ) had been fitted with the relation ρ(T) = ρ ₀?+?ρ ₂T²?+?ρ _4.5T^4.5; the high-temperature (T?>?T _P ) resistivity data were explained using small-polaron hopping and variable-range hopping models. Resistivity data in whole temperature range (100–320 K) could be fitted by percolation model. Polaron activation energy E _a was found to decrease with the content K⁺ increasing, which suggested that K doping increase bond angle Mn–O–Mn, thereby the effective band gap was decreased and the double exchange coupling was increased of, this is the reason for the decrease of resistivity.     

Dual relaxation behaviors and large electrostrictive properties of Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>–Sr<Subscript>0.85</Subscript>Bi<Subscript>0.1</Subscript>TiO<Subscript>3</Subscript> ceramics

Lead-free ceramics (1???x)Bi_0.5Na_0.5TiO₃–xSr_0.85Bi_0.1TiO₃ (BNT–xSBT, x?=?0.4, 0.5, 0.6 and 0.7) were prepared by a solid-state reaction process. Coexistence of ferroelectric relaxation at low temperature and Maxwell–Wagner dielectric relaxation at high temperature was revealed for the first time in this system. Meanwhile, hysteresis-free P–E loops combined with a very high piezoelectric strain coefficient (d₃₃) of 1658 pC/N concurrently with large electrostrictive coefficient Q?=?0.287 m⁴C^?2 were achieved. The ferroelectric relaxor behavior and large electrostrictive strain might be linked to easy reorientation and reversal of ergodic PNRs and the combined effect of Bi off-center position and lone pair electrons.     

Effect of manganese doping on conduction in olivine LiFePO<Subscript>4</Subscript>

Lithium ion batteries play a crucial role in terms of good rechargeability, long cycles and higher shelf life. For the fabrication of such a Li ion battery, properties of cathode material can be engineered keeping anode and electrolyte fixed. In the present work, lithium iron phosphate (LiFePO₄) has been utilized as cathode material and the properties of LiFePO₄ have been tuned by doping manganese (Mn). LiFePO₄ and different concentrations of Mn doped LiFePO₄ were prepared by solid state route. X-Ray diffraction and Raman studies were performed to confirm the formation of LiFePO₄ and Mn doped LiFePO₄ in olivine structure. Cyclic voltammetry studies revealed maximum peak oxidation current (2.96 mA) and largest surface coverage (0.066 nanoMoles/cm²) for the LiFePO₄ doped with 15% Mn (LiMn_0.15Fe_0.85PO₄). AC-conductivity study was carried out for different frequencies at room temperature. The conductivity parameters estimated using Almond and West formalism support the cyclic voltammetry results. Ion-hopping rate (ω _p ) and charge carrier concentration (K) maximize for 15% Mn doping (ω _p : 582974.48719 Hz; K: 2.62447?×?10^?6) and drop on either increasing (ω _p : 167134.73521 Hz; K: 1.25647?×?10^?7) or decreasing (ω _p : 130726.49084 Hz; K: 2.52435?×?10^?6) the Mn doping. The increase till 15% Mn doping has been attributed to the increase in unit cell volume with Mn doping while the sudden decrease at 20% Mn doping is due to dominance of back-hopping mechanism. The results clearly indicate that 15% Mn doped LiFePO₄ is the most appropriate for the realization of a cathode for Li-ion battery.     

A comparative study of lignocellulosic ethanol productivities by <Emphasis Type="Italic">Kluyveromyces marxianus</Emphasis> and <Emphasis Type="Italic">Saccharomyces cerevisiae</Emphasis>

The yeast Saccharomyces cerevisiae is commonly employed in industrial ethanol production, regardless of the capability of Kluyveromyces marxianus strains to produce ethanol at similar or higher levels and on inhibitory conditions. Therefore, in this work strains of S. cerevisiae (ethanol RED and AR5) and K. marxianus (SLP1 and OFF1) were compared for ethanol production from sugarcane bagasse (SCB) and wheat straw (WS) hydrolysates. As it is known, during the lignocellulosic hydrolysis not only free sugars were obtained (SCB, g L^?1: glucose 7.64, xylose 8.38, arabinose 2.43; and WS, g L^?1: glucose 6.07, xylose 6.36, arabinose 2.09) but also growth inhibitors of yeast such as hydroxymethylfurfural and furfural that could modify the fermentation capability. The volumetric ethanol productivity (Q _p) was evaluated, and it was observed that the K. marxianus SLP1 was the most efficient for ethanol production reaching a Q _p of 0.292 and 0.250 g L^?1 h^?1 on SCB and WS hydrolysates, respectively. In contrast, S. cerevisiae AR5 and ethanol RED exhibited a reduced Q _p on SCB, but similar values of Q _p to K. marxianus OFF1 on WS. The results obtained show that it is possible to select K. marxianus yeast strains for ethanol production using SCB and WS hydrolysates obtaining higher Q _p than S. cerevisiae yeast strains. Considering the efficiency of ethanol production and the tolerance to inhibitors, K. marxianus strain SLP1 possesses a great potential as an industrial yeast for lignocellulosic ethanol production.     

Good thermal stability and improved piezoelectric properties of (K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>)NbO<Subscript>3</Subscript>–Bi(Mg<Subscript>0.75</Subscript>W<Subscript>0.25</Subscript>)O<Subscript>3</Subscript> solid solutions

In this paper, (1 ? x)(K_0.5Na_0.5)NbO₃–xBi(Mg_0.75W_0.25)O₃ (x = 0–0.015) lead-free dielectric ceramics were investigated. XRD analysis certified that the Bi(Mg_0.75W_0.25)O₃ has diffused into (K_0.5Na_0.5)NbO₃ to fabricate a new solid solution. The addition of Bi(Mg_0.75W_0.25)O₃ depressed the orthorhombic–tetragonal phase transition temperature from 210 to 176 °C and tetragonal–pseudocubic phase transition temperature (Curie point) from 419 to 400 °C. As x = 0.005, the ceramics exhibited high relative permittivity (ε ~ 1325), low dielectric loss (tan δ < 2.9%) tan δ stability (Δε/ε_168°C ≤ ±15%) in the temperature range of 168 ~ 369 °C. Especially, the ceramics also showed optimized piezoelectric constant (d ₃₃ = 122 pC N^?1) and remnant polarization (P_r = 32.57 μC cm^–2). These results indicated that the BMW added ceramics have potential applications in ferroelectric and thermal stability devices.