Structural and electric properties of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)<Subscript>0.88</Subscript>Ba<Subscript>0.12</Subscript>TiO<Subscript>3</Subscript>

Lead-free (Na_0.5Bi_0.5)_0.88Ba_0.12TiO₃ ceramics have been prepared and studied by X-ray diffraction and by the complex dielectric response as a function of temperature, frequency and a.c. field intensity. Relaxor-like dielectric behaviour were induced by barium Ba dopping to Na_0.5Bi_0.5TiO₃. It was shown, that relaxor-like characteristics can be enhanced by the increase of the a.c. field intensity. A sharp increase in the electric permittivity and dielectric loss on heating near 230 °C has been observed. This sharp increase in dielectric responses indicates a transformation between classical and relaxor ferroelectric phases. The X-ray diffraction study shows that this transformation corresponds to the first order phase transition from tetragonal to cubic. The use of (Na_0.5Bi_0.5)_0.88Ba_0.12TiO₃ ceramics for device applications has been indicated.     

Microstructure and electrical properties of K<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>NbO<Subscript>3</Subscript> lead-free piezoelectric ceramics sintered in low pO<Subscript>2</Subscript> atmosphere

Pure K_0.5Na_0.5NbO₃ lead-free piezoelectric ceramics without any dopants/additives were sintered at various temperatures (950–1125 °C) in low pO₂ atmosphere (pO₂?~?10^?6 atm). All ceramics exhibit high relative densities (>?94%) and low weight loss (<?0.6%). Compared to the ceramics sintered in air, the ceramics sintered in low pO₂ exhibit improved electrical properties. The piezoelectric constant d₃₃ and converse piezoelectric constant d₃₃* are 112 pC/N and 119 pm/V, respectively. The ceramics show typical ferroelectric behavior with the remnant polarization of 21.6 µC/cm² and coercive field of 15.5 kV/cm under measurement electric field of 70 kV/cm. The good electrical properties of the present samples are related to the suppression of volatility of the alkali cations during the sintering process in low pO₂ atmosphere.     

Anomalous magnetic susceptibility in Nd<Subscript>0.5</Subscript>Sr<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> manganite single crystals

Chaotic oscillations of the low-frequency magnetic susceptibility χ in a Nd_0.5Sr_0.5MnO₃ (NSMO) manganite single crystal have been observed in the temperature interval of the coexistence of the ferro- and antiferromagnetic phases of the given composition. It is established that the amplitude of χ oscillations depends on the constant bias magnetic field. The appearance of susceptibility oscillations in NSMO single crystals is attributed to the formation of magnetic transition regions, which can exist at the boundaries between ferro- and antiferromagnetic phases.     

Relaxor behavior and ferroelectric properties of Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-K<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-KNbO<Subscript>3</Subscript> lead-free ceramics

Lead-free ferroelectric ceramics of (1−x) [0.88Na_0.5Bi_0.5TiO₃-0.12K_0.5Bi_0.5TiO₃]-x KNbO₃(x = 0, 0.02, 0.04, and 0.06) were prepared by the conventional ceramic fabrication technique. The crystal structure, dielectric properties and P-E hysteresis loops were investigated. XRD data showed that all compositions could form pure perovskite structure. Temperature dependence of dielectric constant ε _r and dissipation factor tanδ measurement between room temperature and 500^∘C revealed that the compounds experience phase transitions that from ferroelectric to anti-ferroelectric and anti-ferroelectric to paraelectric in the range of x = 0–0.04. The frequency dependent dielectric constant showed these compounds were relaxor ferroelectric. At low frequency and high temperature, dielectric constant and dissipation factor increased sharply attributed to the superparaelectric clusters after the KNbO₃ doped.     

Large strain response in acceptor- and donor-doped Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-based lead-free ceramics

Effects of Fe and La addition on the dielectric, ferroelectric, and piezoelectric properties of Bi_0.5Na_0.5TiO₃–Bi_0.5Li_0.5TiO₃–BaTiO₃–Mn ceramics were investigated. Similar to the doping effect in lead-based piezoelectric materials, here the Fe-doped ceramic created a hard effect with an improved mechanical quality factor (Q _m) ~ 160, coercive field (E _c) ~ 2.9 kV/mm, decreased dielectric constant ( e₃₃^T /e₀ ) ~ 80 3, \left( {\varepsilon_{33}^{T} /\varepsilon_{0} } \right)\sim 80 3, and loss (tanδ) ~ 0.024 while the La-doped one indicated a soft feature with improved piezoelectric constant (d ₃₃) ~ 184 pC/N, e₃₃^T /e₀   ~ 983, \varepsilon_{33}^{T} /\varepsilon_{0} \,\sim { 983}, tanδ ~ 0.033, and decreased E _c ~ 2.46 kV/mm. In addition, the temperature dependence of the ferroelectric hysteresis loops and strain response under unipolar electric field was also studied. Around the depolarization temperature T _d, large strain value was obtained with the normalized d₃₃^* d_{33}^{*} up to ~1,000 pC/N, which was suggested originated from the development of the short-range order or non-polar phases in the ferroelectric matrix. All these would provide a new way to realize high piezoelectric response for practical application in different temperature scale.     

Dielectric and piezoelectric properties of YMnO<Subscript>3</Subscript> modified Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> lead-free piezoelectric ceramics

Perovskite lead-free piezoelectric ceramics Bi_0.5Na_0.5TiO₃, modified with yttrium and manganese to form a new compound, (1 − x) Bi_0.5Na_0.5TiO₃–xYMnO₃ (BNT-YM100x) with x = 0–1.2 mol%, was synthesized by a conventional solid-state reaction method. The effect of YMnO₃ on crystal structure, dielectric and piezoelectric properties was investigated. X-ray diffraction analysis shows that the materials have a single phase perovskite structure with rhombohedral symmetry. Addition of small amount of YMnO₃ improves piezoelectric properties and the optimal piezoelectric properties of d ₃₃ = 115 pC/N, k _p = 0.207 and Q _m = 260 were obtained at 0.9% YMnO₃ addition. The loss tangent tanδ is approximately constant while Curie temperature decreases with increasing YMnO₃ concentration.     

Enhanced magnetoelectric coupling in La-modified Bi<Subscript>5</Subscript>Co<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>15</Subscript> multiferroic ceramics

Multiferroic properties of La-modified four-layered perovskite Bi_5?x La _x Fe_0.5Co_0.5Ti₃O₁₅ (0 ≤ x ≤ 1) ceramics were investigated, by analyzing the magnetodielectric effect, magneto-polarization response and magnetoelectric conversion. X-ray diffraction indicated the formation of pure Aurivillius ceramics, and Raman spectroscopy revealed the Bi ions displacement and the crystal structure variation. The enhancement of ferromagnetic and ferroelectric properties was observed in Bi_5?x La _x Fe_0.5Co_0.5Ti₃O₁₅ after La modification. The evidence for enhanced ME coupling was determined by magnetic field-induced marked variations in the dielectric constant and polarization. A maximum ME coefficient of 1.15 mV/cm·Oe was achieved in Bi_4.25La_0.75Fe_0.5Co_0.5Ti₃O₁₅ ceramic, which provides the possible promise for novel magnetoelectric device application.     

Phase transition and electrical properties in the Li-modified Bi<Subscript>0.5</Subscript>Na<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript>-based lead-free ceramics

Phase transition and electrical properties were demonstrated for a Li-modified Bi_0.5Na_0.5TiO₃-based solid solution. (0.935 − x)Bi_0.5Na_0.5TiO₃ − xBi_0.5Li_0.5TiO₃ − 0.065BaTiO₃ with 0.5 mol% Mn doping was prepared by a conventional solid state reaction method. Close inspection of X-ray diffraction patterns indicated that no characteristic peaks splitting happened, indicating the pseudocubic structure for all the compositions. At a critical composition x of 0.06, optimized performance was obtained with piezoelectric constant d ₃₃ of 176 pC/N, electromechanical coupling factors k _P of 0.33, and k _t of 0.52, respectively. In addition, it was found that the Li substitution could lead to a disruption of long-range ferroelectric order and obtain enhanced frequency dispersion behavior accompanied with the decreasing of the depolarization temperature T _d, which was responsible for the observed weaker ferroelectric polarization and electromechanical response. The composition induced structure evolution was also discussed combined with the Raman spectroscopy.     

Investigation of charge transport mechanism in semiconducting La<Subscript>0.5</Subscript>Ca<Subscript>0.5</Subscript>Mn<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>O<Subscript>3</Subscript> manganite prepared by sol–gel method

Here in, we report the charge transport mechanism in semiconducting La_0.5Ca_0.5Mn_0.5Fe_0.5O₃ (LCMFO) polycrystalline material synthesized via sol–gel auto combustion route. X-ray diffraction (XRD) analysis confirmed the orthorhombic phase of the prepared material. Temperature dependent resistivity and impedance spectroscopy measurements have been carried out to probe the dielectric and electrical conduction mechanism which revealed a change of Mott variable range to the small polaronic hopping conduction mechanism around 303 K. The complex impedance and modulus spectra undoubtedly showed the contribution of both grain and grain boundary effect on the conduction properties of LCMFO. An equivalent circuit [(R_gbQ_gb) (R_gQ_g)] model has been used to address the electrical parameters associated with the different phases (grains and grain boundaries) having different relaxation times. The values of resistances of two phases obtained after fitting the equivalent circuit in the nyquist plot have been analyzed which confirmed the change of conduction mechanism around 303 K. The resultant change in conduction mechanism is also supported by the conductivity plots.     

Structural,dielectric and impedance spectroscopy studies of (Na<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>)(Zr<Subscript>0.025</Subscript>Ti<Subscript>0.975</Subscript>)O<Subscript>3</Subscript> ceramic

Structural, vibrational, dielectric and electrical properties of (Na_0.5Bi_0.5)(Zr_0.025Ti_0.975)O₃ ceramic synthesized by the solid-state reaction technique have been carried out. The X-ray diffraction analysis was indicated as a pure perovskite phase in the rhombohedral structure. The modes of rhombohedral vibrations were appeared in the experimental Raman spectrum at room temperature. The dielectric and electrical properties of the material were investigated by impedance spectroscopy analysis for a broad range of temperatures (50–560 °C) and frequency domain of 10²?10⁶ Hz. The dielectric measurement exhibit two phase transitions: a ferro-antiferroelectric transition followed by an antiferro-paraelectric transition at higher temperatures. Complex impedance analysis was carried out in order to distinct the contribution of the grains and the grain boundaries to the total electrical conduction. The Nyquist plot was proved to be a non-Debye relaxation mechanism. The combined spectroscopic plots of the imaginary part of electric impedance and modulus confirmed the non-Debye type behavior. The frequency dependent ac conductivity obeys the double power law behavior and shows three types of conduction process. The significant decrease of dc conductivity spectrum followed the Arrhenius relationship. The values of calculated activation energy of the compound implied that the electrical conduction is mostly due the high oxygen mobility.     

Structural,optical and microscopic properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> thin films

Mo_0.5W_0.5Se₂ thin films were obtained by using relative simple chemical route at room temperature. Various preparative conditions of the thin films are outlined. The films were characterized by X-ray diffraction, scanning electron microscope, optical and electrical properties. The grown films were found to be uniform, well adherent to substrate and brown in color. The X-ray diffraction pattern shows that thin films have a hexagonal phase. Optical properties show a direct band gap nature with band gap energy 1.44 eV and having specific electrical conductivity in the order of 10⁻⁵ (Ωcm)⁻¹.     

Anomalous Impact of Hydrostatic Pressure on Superconductivity of Polycrystalline LaO<Subscript>0.5</Subscript>F<Subscript>0.5</Subscript>BiSe<Subscript>2</Subscript>

We report bulk superconductivity at 2.5 K in LaO_0.5F_0.5BiSe₂ compound through the DC magnetic susceptibility and electrical resistivity measurements. The synthesized LaO_0.5F_0.5BiSe₂ compound is crystallized in tetragonal structure with space group P4/nmm and Reitveld refined lattice parameters are a = 4.15(1) Å and c = 14.02(2) Å. The lower critical field of H _c1 = 40 Oe, at temperature 2 K is estimated through the low field magnetization measurements. The LaO_0.5F_0.5BiSe₂ compound showed metallic normal state electrical resistivity with residual resistivity value of 1.35 m Ω cm. The compound is a type-II superconductor, and the estimated H _c2(0) value obtained by WHH formula is above 20 kOe for 90 % ρ _n criteria. The superconducting transition temperature decreases with applied pressure till around 1.68 GPa and with further higher pressures a high- T _c phase emerges with possible onset T _c of above 5 K for 2.5 GPa.     

Mechanical and electrical switching of local ferroelectric domains of K<Subscript>0.5</Subscript>Bi<Subscript>4.5</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> film

Ferroelectric/Piezoelectric K_0.5Bi_4.5Ti₄O₁₅ (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40–50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.     

Synthesis of monophasic Ce<Subscript>0.5</Subscript>Zr<Subscript>0.5</Subscript>O<Subscript>2</Subscript> solid solution by microwave-induced combustion method

Nanocrystalline monophasic Ce_0.5Zr_0.5O₂ solid solution (1:1 molar ratio) has been synthesized by microwave-induced combustion method in a modified domestic microwave oven (2.45 GHz, 700 W) in approximately 40 min from cerium nitrate and zirconium nitrate precursors using urea as ignition fuel. For the purpose of better comparison, a Ce _x Zr_{1 − x} O₂ solid solution (1:1 molar ratio) was also synthesized by a conventional co-precipitation method from nitrate precursors and subjected to different calcination temperatures. The synthesized powders of both methods were characterized by means of X-ray powder diffraction, thermogravimetry/differential thermal analysis, scanning electron microscopy, and BET surface area techniques. Oxygen storage capacity (OSC) measurements were performed to understand the usefulness of these materials for various applications. The characterization results reveal that the sample obtained by microwave-induced combustion-synthesis route exhibits homogeneous monophasic Ce_0.5Zr_0.5O₂ solid solution whereas the co-precipitated sample displays compositional heterogeneity. The OSC measurements reveal that the materials synthesized by both methods exhibit comparable oxygen vacancy content (δ).     

Magnetic and ferroelectric properties of SmBi<Subscript>4</Subscript>Fe<Subscript>0.5</Subscript>Co<Subscript>0.5</Subscript>Ti<Subscript>3</Subscript>O<Subscript>15</Subscript> compounds prepared with different synthesis methods

The SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ compounds were prepared by the insertion of the SmFe_0.5Co_0.5O₃ into the Bi₄Ti₃O₁₂ host and the conventional solid state reaction method, respectively. X-ray diffraction analysis indicates that the conventional solid state reaction method favors the formation of a single phase four-layer Aurivillius phase of SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ more easily than that prepared by the insertion method. Magnetic and ferroelectric measurements demonstrate that the samples prepared by both methods exhibit coexistence of strong ferromagnetic and weak ferroelectric behaviors at room temperature. Compared with the Bi₅FeTi₃O₁₅, the ferromagnetism of the SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ was dramatically enhanced by the partial substitution of Co for Fe and Sm for Bi. The SmBi₄Fe_0.5Co_0.5Ti₃O₁₅ samples exhibit large magnetic responses (2M _r ?~?643 memu/g and coercive fields 2H _c ?~?344 Oe) at room temperature.     

Structural and surface morphological properties of chemically deposited Mo<Subscript>0.5</Subscript>W<Subscript>0.5</Subscript>S<Subscript>2</Subscript> thin film

Preparation of layered type semiconductor Mo_0.5W_0.5S₂ ⁻ thin films has been successfully done by using chemical bath deposition method. Objective of the studies are related to structural, optical, morphological and electrical properties of the thin films. The preparation method is based on the reaction between tartarate complex of Mo and W with thiourea in an aqueous alkaline medium at 363 K. X-Ray diffraction reveals a polycrystalline film composed of both MoS₂ and WS₂ phases. The optical study shows that the band gap of the film is 1.6 eV. Electrical conductivity is high which is in the order of 10⁻³–10⁻² (Ώ cm)⁻¹.     

Structural,dielectric, ac conductivity and electromagnetic shielding properties of polyaniline/Ni<Subscript>0.5</Subscript>Zn<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> composites

A conducting polymer, polyaniline (PANI)/Ni_0.5Zn_0.5Fe₂O₄ composites with high dielectric absorbing properties and electromagnetic shielding effectiveness at low frequencies were successfully synthesized through a simple in situ emulsion polymerization. PANI was doped with hydrochloric acid to improve its electrical properties and interactions with ferrite particles. PANI/Ni_0.5Zn_0.5Fe₂O₄ composites were characterized by X-ray diffraction analysis, scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and thermal gravimetric analysis. Frequency dependence of dielectric and ac conductivity (σ_ac) studies have been undertaken on the PANI/Ni_0.5Zn_0.5Fe₂O₄ composites in the frequency range 50 Hz–5 MHz. The electrical conduction mechanism in the PANI/Ni_0.5Zn_0.5Fe₂O₄ is found to be in accordance with the electron hopping model. Further, frequency dependence of electromagnetic interference (EMI) shielding effectiveness (SE) is studied. The EMI shielding effectiveness is found to decrease with an increase in the frequency. The maximum value 55.14 dB of SE at 50 Hz was obtained at room temperature for PANI/Ni_0.5Zn_0.5Fe₂O₄ composites in the 50 Hz–5 MHz frequency range. PANI/Ni_0.5Zn_0.5Fe₂O₄ composites were demonstrated as a promising functional material for the absorbing of electromagnetic waves at low frequencies because of a large amount of dipole polarizations in the polymer backbone and at the interfaces of the Ni–Zn ferrite particles and PANI matrix.     

Electrical and crystallographic properties of nanocrystalline CdSe<Subscript>0.5</Subscript>S<Subscript>0.5</Subscript> composite thin films deposited by dip method

A dip method is employed for the deposition of CdSe_0.5S_0.5 composite thin film at room temperature. Cadmium sulphate, thiourea and sodium selenosulphate were used as the basic source material. Solid solution with cubic phase was observed from X-ray diffraction studies. The specific conductivity of the film was found to be in order of 10⁻⁷ (Ωcm)⁻¹. The temperature dependence of an electrical conductivity, thermoelectrical power, carrier density and carrier mobility for CdSe_0.5S_0.5 thin films have been examined. The low temperature conductivity is governed by a variable range of conduction while grain boundary limited conduction mechanism is predominant at higher temperature.     

Effect of cerium additive and secondary phase analysis on Ag<Subscript>0.5</Subscript>Bi<Subscript>0.5</Subscript>TiO<Subscript>3</Subscript> ceramics

Cerium-doped silver bismuth titanate—Ag_0.5Bi_0.5TiO₃ (ABT) ceramics have been synthesized by the high-temperature solid-state reaction method. The structure and elemental examination of the prepared ceramic was analysed by X-ray diffraction (XRD), Fourier transform infrared, scanning electron microscopy and energy-dispersive spectroscopy. XRD analysis showed the presence of pyrochlore structure and secondary phase when more than 5 mol% cerium was added. The impact of temperature on cerium-doped silver bismuth titanate samples was analysed by differential thermal analysis and differential scanning calorimetry. Cerium doping caused the flaky morphology comparing with undoped sample. The homogeneity of all the samples was discussed in detail by diffuse reflectance spectrum. This is the first time the reflection process is analysed for the cerium-doped ABT system to the best of our knowledge.     

Effects of rare-earth Sm<Subscript>2</Subscript>O<Subscript>3</Subscript> addition on relaxation behavior and electric properties of 0.5PNN-0.5PZT ceramics

Rare-earth Sm₂O₃-doped Pb(Ni_1/3Nb_2/3)_0.5(Zr_0.3Ti_0.7)_0.5O₃ (0.5PNN-0.5PZT + xSm) piezoelectric ceramics were prepared by a two-step solid-state reaction method. The effects of Sm₂O₃ doping on phase structure, electric properties and dielectric relaxation of 0.5PNN-0.5PZT ceramics were investigated. The results showed that Sm³⁺ tended to occupy the B-site of Zr⁴⁺. The XRD patterns showed that all ceramics had a pure perovskite phase structure. With the increasing of Sm₂O₃ addition, Curie temperature moved towards low temperatures obviously and dispersion coefficient γ first increased and then decreased gradually. When x = 0.2 wt%, the γ reaches at maximum (1.998), it was indicated that a nearly complete diffuse phase transition existed and relaxation behaviors enhanced. But the ceramics with x = 0.2 wt% exhibited terrible electric properties: d₃₃ = 605 pC/N, k_p = 0.55, ε_r ~ 5020, tanδ ~ 2.20 %. It showed that the relaxation behaviors have relationships with electric properties to some extent.