有源矩阵液晶显示的进展

在分析了无源矩阵驱动的局限性的基础上，叙述和比较了ＭＩＭ薄膜二极管和ａ－Ｓｉ薄膜晶体管有源矩阵液晶显示的结构、工作原理和特性，并讨论了它们的进展与发展方向。     

具有双绝缘层和修饰电极的薄膜场效应晶体管

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.     

具有双绝缘层和修饰电极的薄膜场效应晶体管

研究了具有OTS/SiO2双绝缘层结构及MoO3/Al电极结构的有机薄膜晶体管.器件是以热生长的Si02作为有机薄膜晶体管的栅绝缘层,酞菁铜作为有源层的.OTS/SiO2双绝缘层的结构提高了器件的场效应迁移率和开关电流比,降低了阈值电压.实验表明在同样的栅极电压下,具有MoO3/Al电极的器件和金电极的器件有着相似的源漏输出电流.结果显示具有OTS/SiO2双绝缘层及MoO3/Al电极结构的器件能有效改进有机薄膜晶体管的性能.     

有源OLED的发展前景及分析

介绍OLED技术的发展历史及优势，重点阐述其市场应用情况，说明OLED技术的光明前景。     

Double-Gate Tunnel FET With High-κ Gate Dielectric

In this paper, we propose and validate a novel design for a double-gate tunnel field-effect transistor (DG tunnel FET), for which the simulations show significant improvements compared with single-gate devices using a gate dielectric. For the first time, DG tunnel FET devices, which are using a high-gate dielectric, are explored using realistic design parameters, showing an on-current as high as 0.23 mA for a gate voltage of 1.8 V, an off-current of less than 1 fA (neglecting gate leakage), an improved average subthreshold swing of 57 mV/dec, and a minimum point slope of 11 mV/dec. The 2D nature of tunnel FET current flow is studied, demonstrating that the current is not confined to a channel at the gate-dielectric surface. When varying temperature, tunnel FETs with a high-kappa gate dielectric have a smaller threshold voltage shift than those using SiO₂, while the subthreshold slope for fixed values of V_g remains nearly unchanged, in contrast with the traditional MOSFET. Moreover, an I_on/I_off ratio of more than 2 times 10¹¹ is shown for simulated devices with a gate length (over the intrinsic region) of 50 nm, which indicates that the tunnel FET is a promising candidate to achieve better-than-ITRS low-standby-power switch performance.     

NMOS Compatible Work Function of TaN Metal Gate With Erbium-Oxide-Doped Hafnium Oxide Gate Dielectric

This letter demonstrates reduction in effective work function of tantalum-nitride (TaN) metal gate with erbium-oxide-doped hafnium oxide. We report that TaN effective metal-gate work function can be tuned from Si midgap to the conduction band to meet the work-function requirement of NMOSFETs by incorporating ErO in HfO₂ with an equivalent oxide thickness as low as 1.15 nm. Several other lanthanide-oxide doped hafnium oxides show similar characteristics.     

A Single-Inductor Step-Up DC-DC Switching Converter With Bipolar Outputs for Active Matrix OLED Mobile Display Panels

A single-inductor step-up DC-DC switching converter with bipolar outputs is implemented for active-matrix OLED mobile display panels. The positive output voltage is regulated by a boost operation with a modified comparator control (MCC), and the negative output voltage is regulated by a charge-pump operation with a proportional-integral (PI) control. The proposed adaptive current-sensing technique successfully supports the implementation of the proposed converter topology and enables the converter to work in both discontinuous-conduction mode (DCM) and continuous-conduction mode (CCM). In addition, with the MCC method, the converter can guarantee a positive output voltage that has both a fast transient response of the comparator control and a small output voltage ripple of the PWM control. A 4.1 mm$^{2}$ converter IC fabricated in a 0.5 $mu$m power BiCMOS process operates at a switching frequency of 1 MHz with a maximum efficiency of 82.3% at an output power of 330 mW.      

有源矩阵液晶显示器的缺陷检测

分析了ＶＧＡ有源矩阵液晶显示器的缺陷分类、生产原因。研制出了有源矩阵液晶显示器的断路测试板、短路测试板以及全板显示则试板。     

7.6cm多色有源矩阵液晶显示器

介绍了南京电子器件研究所、华中理工大学和电子部４７所三单位联合研制的７．６ｃｍ２４０（Ｈ）×２２０（Ｖ）单元ａ－ＳｉＴＦＴ－ＬＣＤ,简要论述了ＴＦＴ矩阵板、行列驱动电路、彩色滤色器、液晶盒、离密度柔性引线带、控制引线电路等一系列关键技术。显示器的有效显示面积６０ｍｍ×４５ｍｍ,亮度≥５０ｃｄ／ｍ＾２,时比度（最大值）约３０：１,视角范围（对比度５：１）：水平方向〉±４０°,垂直方向〉±３０°,灰度     

全彩色有源矩阵OLED显示技术展望

有机电致发光显示器为了在平板显示器领域具有竞争力，就应向大容量、高分辨率、低耗电量和大型化的方向发展。主动式彩色有机电致发光显示技术将是OLED发展的主流。本文将介绍主动式OLED的发光结构和全彩色化技术。     

Electrical Characteristics of the HfAlON Gate Dielectric With Interfacial UV-Ozone Oxide

In this letter, the electrical properties of a HfAlON dielectric with UV-O₃ interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O₃ oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-kappa dielectric applications.     

Stability of nc-Si:H TFTs With Silicon Nitride Gate Dielectric

We report the fabrication and characterization of bottom-gate and top-gate nanocrystalline silicon (nc-Si:H) thin-film transistors (TFTs) with amorphous-silicon nitride (a-SiN_x:H) as the gate dielectric. The devices were fabricated using standard 13.56-MHz plasma-enhanced chemical vapor deposition at 240 degC. Here, the same 80-nm nc-Si:H channel, 300-nm a-SiN_x:H gate dielectric, and 60-nm n⁺ nc-Si:H ohmic contact layers were used in both TFT structures. We analyzed the effects of gate configuration on TFT performance and, in particular, the electrical stability. The stability tests were carried out at a gate bias stress in the range from 20 to 40 V. The nc-Si:H TFTs demonstrated much better threshold-voltage (V_T ) stability compared with the amorphous-silicon (a-Si:H) counterparts, offering great promise for applications in active-matrix organic light-emitting diode (AMOLED) displays     

α-Si-H TFT及有源矩阵选址平板液晶显示

本文报道了用于平板液晶显示(LCD)的氢化非晶硅薄膜晶体管(α-Si:H TFT)的研制结果,此晶体管开态电流约10~(-6)A,关态电流<10~(-11)A,开启电压～15V.用此α-Si:H TFT矩阵已封装出具有20×20个有效象素单元的液晶显示平板,并成功地实现了有源选址与动态显示功能.同时,对如何进一步提高TFT性能作了一些分析与讨论.     

激光修补有源矩阵液晶显示器的研究

绍了有源矩阵液晶显示器的主要缺陷形式。在采用冗余技术的基础上，研究了针对不同缺陷形式所应采取的不同的激光修补对策，由于加法激光修补仪价格昂贵，作者在美国Ｓｏｌａｒｅｘ公司工作期间开发出了利用减法激光修补仪进行加法修补的独特工艺     

Enhanced P3HT OTFT Transport Performance Using Double Gate Modulation Scheme

Electrical properties of single-gated (bottom-gated or top-gated) and double-gated (DG) organic thin-film transistors (OTFTs) are systematically investigated in terms of threshold voltage $(V_{rm th})$, subthreshold slope, and $I_{{rm ON}/{rm OFF}}$ . We found that the device structure has significant impacts on the aforementioned electrical properties and the operation modes in a poly-3-hexyl thiophene DG OTFT. An empirical electrostatic potential model is employed to describe well $V_{rm th}$ behaviors of DG OTFTs in different modulation schemes. In addition, selective active-area coating in OTFTs is realized using an inkjet printing process, and consequently, parasitic leakage is much suppressed.      

Organic Thin‐Film Transistors with Anodized Gate Dielectric Patterned by Self‐Aligned Embossing on Flexible Substrates

An upscalable, self‐aligned patterning technique for manufacturing high‐ performance, flexible organic thin‐film transistors is presented. The structures are self‐aligned using a single‐step, multi‐level hot embossing process. In combination with defect‐free anodized aluminum oxide as a gate dielectric, transistors on foil with channel lengths down to 5 μm are realized with high reproducibility. Resulting on‐off ratios of 4 × 10⁶ and mobilities as high as 0.5 cm² V^?1 s^?1 are achieved, indicating a stable process with potential to large‐area production with even much smaller structures.     

Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

In this letter, we study the effects of sulfur (S) passivation, using aqueous ammonium sulfide ((NH₄)₂S), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode. Compared with control samples, the S passivation can effectively reduce both equivalent oxide thickness and interface-state density. X-ray-photoelectron-spectroscopy analysis shows that (NH₄)₂S treatment can reduce the Ge-O bonds on Ge surface. The thermal stability of the S passivation under different postmetal-annealing temperatures was also examined, and it was found that samples with (NH₄)₂S treatment exhibit stable Ge/high-fc interface upon 550-deg C postmetal-deposition annealing, whereas interface quality degrades for those samples without S passivation.     

黑白7.5cm有源矩阵液晶显示器的改进

通过改进a－SiTFT遮光层工艺、液晶盒取向和封接工艺，使黑白7.5cm（3英寸）240（H）×220（V）单元a－SiTFT－LCD的对比度、灰度、视角、串扰等性能获得大的改善，显示图象质量明显提高。     

薄栅介质TDDB效应

在恒压和恒流应力条件下测试了超薄栅氧化层的击穿特性 ,研究了 TDDB(Tim e Dependent DielectricBreakdown)的可靠性表征方法 .对相关击穿电荷量 QBD进行了实验测试和分析 .结果表明 :相关击穿电荷量 QBD除了与氧化层质量有关外 ,还与应力电压和应力电流密度以及栅氧化层面积有关 .对相关系数进行了拟合 ,给出了 QBD的解析表达式 .按照上述表达式外推的结果和实验值取得了很好的一致 .提出了薄栅介质 TDDB效应的表征新方法     

薄栅介质TDDB效应

在恒压和恒流应力条件下测试了超薄栅氧化层的击穿特性,研究了TDDB(Time Dependent Dielectric Breakdown)的可靠性表征方法.对相关击穿电荷量QBD进行了实验测试和分析.结果表明:相关击穿电荷量QBD除了与氧化层质量有关外,还与应力电压和应力电流密度以及栅氧化层面积有关.对相关系数进行了拟合,给出了QBD的解析表达式.按照上述表达式外推的结果和实验值取得了很好的一致.提出了薄栅介质TDDB效应的表征新方法.