Heteroepitaxial ZnO/sapphire (0 0 0 1) structure prepared by sol–gel process

ZnO thin films were grown on sapphire (0 0 0 1) substrates by sol–gel process and their structural and optical properties were characterized in detail. High-quality texture was obtained by using precursor solution of zinc acetate and ethanolamine in 2-methoxyethanol, pyrolyzed at 300 °C, then heated at 500 °C, and finally annealed at 750 °C. Highly c-axis oriented ZnO films were confirmed by X-ray θ–2θ scan. A relatively high transmittance in the visible spectra range and clear absorption edge of the film were observed. Epitaxial relationship between ZnO and sapphire and photoluminescence of the film were examined by using a X-ray pole-figure analysis and He–Cd laser. Near-band-edge emission with a deep-level emission was observed.     

Room temperature synthesis of boron nitride thin films by dual-ion beam sputtering deposition

Boron nitride (BN) films are prepared by dual-ion beam sputtering deposition at room temperature (~25 °C). An assisting argon/nitrogen ion beam (ion energy E_i=0–300 eV) directly bombards the substrate surface to modify the properties of the BN films. The effects of assisting ion beam energy on the characteristics of BN films were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, Raman spectra, atomic force microscopy, and optical transmittance. The density of the B–N bond in the film increased with the increase in assisting ion beam energy. The highest transmittance of more than 95% in the visible region was obtained under the assisting ion beam energy of 300 eV. The band gap of BN films increased from 5.54 eV to 6.13 eV when the assisted ion-beam energy increased from 0 eV to 300 eV.     

Low temperature processed SnO2 films using aqueous precursor solutions

We present a comparison study of the microstructure developments during aqueous solution deposition of SnO₂, particularly, through chemical bath deposition (CBD) and liquid phase deposition (LPD) at very low temperatures (40–75 °C). The effects of solution chemistry on the microstructural details and electrical properties of SnO₂ thin films are presented and discussed. Smooth, nanoparticulate SnO₂ films were obtained from supersaturated precursor solutions with lower precursor concentrations while more aggregated SnO₂ films were generated from higher precursor concentrations. Loosely-packed and porous structures were obtained from low supersaturation solutions with very low pHs. The deposition rates were also evaluated under various deposition conditions. XRD result shows that annealing process helps improve the degree of crystallinity of the as-deposited films that are composed of 3–10 nm nanocrystalline particles. One advantage of LPD of SnO₂ films is in-situ fluorine doping during deposition. The resulting electrical resistivity of F-doped SnO₂ films was about 18.7 Ω cm after the films were annealed at 450 °C.     

Preparation of diamond like carbon thin films above room temperature and their properties

Diamond like carbon (DLC) thin films were deposited on p-type silicon (p-Si), quartz and ITO substrates by microwave (MW) surface-wave plasma (SWP) chemical vapor deposition (CVD) at different substrate temperatures (RT ∼ 300 °C). Argon (Ar: 200 sccm) was used as carrier gas while acetylene (C₂H₂: 20 sccm) and nitrogen (N: 5 sccm) were used as plasma source. Analytical methods such as X-ray photoelectron spectroscopy (XPS), FT-IR and UV–visible spectroscopy were employed to investigate the structural and optical properties of the DLC thin films respectively. FT-IR spectra show the structural modification of the DLC thin films with substrate temperatures showing the distinct peak around 3350 cm^− 1 wave number; which may corresponds to the sp² C–H bond. Tauc optical gap and film thickness both decreased with increasing substrate temperature. The peaks of XPS core level C 1 s spectra of the DLC thin films shifted towards lower binding energy with substrate temperature. We also got the small photoconductivity action of the film deposited at 300 °C on ITO substrate.     

Effects of oxidation cross-linking and sintering additives (TiN,B) on the formation and heat-resistant performance of polymer-derived SiC(Ti,B) films

Effects of oxidation cross-linking and sintering additives (TiN, B) on the microstructure formation and heat-resistant performance of freestanding SiC(Ti, B) films synthesized from Ti, B-containing polycarbosilane (TiB-PCS) precursor were investigated. TiB-PCS green films were first cross-linked for 1 h, 2 h, 3 h and 4 h, respectively, and then pre-sintered at 950 °C. Finally, they were sintered at 1800 °C to complete the conversion from organic films to inorganic SiC(Ti, B) films. The results reveal that curing time has a great impact on the uniformity and density of SiC(Ti, B) films. TiB-PCS films cured for 3 h yield the best quality SiC(Ti, B) films, which are composed of β-SiC crystals, C clusters, α-SiC nano-crystals, a small amount of TiB₂ and B₄C. TiB₂ and B₄C are both steady phases which can inhibit abnormal growth of β-SiC, effectively reduce sintering temperature and help consume excess C from decomposition of amorphous SiOxCy. After high temperature annealing at 1500 °C, 1600 °C and 1700 °C in argon, SiC(Ti, B) films still keep excellent mechanical properties, which makes them attractive candidate materials for microelectromechanical systems (MEMS) used at ultra-high temperatures (exceeding 1500 °C).     

Low temperature atomic layer deposition of SiO2 thin films using di-isopropylaminosilane and ozone

Silicon dioxide (SiO₂) films are deposited by atomic layer deposition (ALD) at low temperatures from 100 to 200 °C using di-isopropylaminosilane (SiH₃N(C₃H₇)₂, DIPAS) as the Si precursor and ozone as the reactant. The SiO₂ films exhibit saturated growth behavior confirming the ALD process, showing a growth rate of 1.2 Å/cycle at 150 °C, which increases to 2.3 Å/cycle at 250 °C. The activation energy of 0.24 eV, extracted from temperature range of 100–200 °C, corresponds to the reported energy barrier for reaction between DIPAS and surface –OH. The temperature dependence of the growth rate can be explained in terms of the coverage and chemical reactivity of the thermally activated precursor on the surface. The ALD-SiO₂ films deposited at 200 °C show properties such as refractive index, density, and roughness comparable to those of conventionally deposited SiO₂, as well as low leakage current and high breakdown field. The fraction of Si–O bond increases at the expense of Si–OH at higher deposition temperature.     

Structural,optical, and electrical properties of conducting p-type transparent Cu–Cr–O thin films

Cu–Cr–O films were prepared by DC magnetron co-sputtering using Cu and Cr targets on quartz substrates. The films were then annealed at temperatures ranging from 400 °C to 900 °C for 2 h under a controlled Ar atmosphere. The as-deposited and 400 °C-annealed films were amorphous, semi-transparent, and insulated. After annealing at 500 °C, the Cu–Cr–O films contained a mixture of monoclinic CuO and spinel CuCr₂O₄ phases. Annealing at 600 °C led to the formation of delafossite CuCrO₂ phases. When the annealing was further increased to temperatures above 700 °C, the films exhibited a pure delafossite CuCrO₂ phase. The crystallinity and grain size also increased with the annealing temperature. The formation of the delafossite CuCrO₂ phase during post-annealing processing was in good agreement with thermodynamics. The optimum conductivity and transparency were achieved for the film annealed at approximately 700 °C with a figure of merit of 1.51×10⁻⁸ Ω⁻¹ (i.e., electrical resistivity of up to 5.13 Ω-cm and visible light transmittance of up to 58.3%). The lower formation temperature and superior properties of CuCrO₂ found in this study indicated the higher potential of this material for practical applications compared to CuAlO₂.     

The effect of annealing on electrical properties of fluorinated amorphous carbon films

Fluorinated amorphous carbon (a–C:F) films have been deposited by electron cyclotron resonance chemical vapor deposition (ECR–CVD) at room temperature using C₄F₈ and CH₄ as precursor gases. The chemical compositions and electrical properties of a–C:F films have been studied by X-ray photoelectron spectroscopy (XPS), capacitance–voltage (C–V) and current-voltage (I–V) measurements. The results show that C–CF_x and C–C species of a–C:F films increase and fluorine content decreases after annealing. The dielectric constant of the annealed a–C:F films increases as a result of enhancement of film density and reduction of electronic polarization. The densities of fixed charges and interface states decrease from 1.6 × 10¹⁰ cm^− 2 and (5–9) × 10¹¹ eV^− 1 cm^− 2 to 3.2 × 10⁹ cm^− 2 and (4–6) × 10¹¹ eV^− 1 cm^− 2 respectively when a–C:F films are annealed at 300 °C. The magnitude of C–V hysteresis decreases due to reduced dangling bonds at the a–C:F/Si interfaces after heat treatment. The conduction of a–C:F films shows ohmic behavior at lower electric fields and is explained by Poole–Frankel (PF) mechanism at higher electric fields. The PF current increases indicative of reduced trap energy when a–C:F films are subjected to higher annealing temperatures.     

Electrocaloric and pyroelectric properties of PZT and PMN–PNN–PZT thin films

The electrocaloric effects (EC) of PZT and PMN–PNN–PZT films were evaluated. PZT and PMN–PNN–PZT thin films with a thickness of 500 nm were fabricated by state-of-the-art chemical solution deposition from a precursor solution with PZT and (PMN?PNN)/PZT=30/70. The polarization hysteresis loop was found to be slim and nonlinear, with smaller hysteretic behavior compared with PZT. The pyroelectric properties evaluated from polarization change and current measurement show that the properties of PMN–PNN–PZT films are superior to those of non-doped PZT films. The electrocaloric temperature changes ΔT due to applied ΔE were calculated. PZT and PMN–PNN–PZT films exhibited ΔT of 2.1 K and 3.6 K at 237.5 °C under a field of 500 kV/cm, respectively. Thermal-electrical energy converters based on pyroelectric effects were investigated for energy harvesting and possible use in ultralow-power sensor modules. The possibilities of pyroelectric energy harvesting using these PZT films were also investigated.     

Structural,optical and methanol sensing properties of sprayed In2O3 nanoparticle thin films

Indium oxide (In₂O₃) nanoparticle thin films were grown on cleaned glass substrates by the chemical spray pyrolysis technique using the precursor solution of indium nitrate (In (NO₃)₃). The XRD studies confirm that the films are polycrystalline In₂O₃, possessing cubic structure with lattice parameters, a = b = c = 10.17 Å. The optical studies show a direct optical band gap of 3.32 eV and an indirect band gap of 2.6 eV in the prepared films. The films exhibit high optical transparency >80% in the visible region, reaching a maximum of 85% at 684 nm wavelength. Further, the gas sensing properties of the films have been investigated for various concentrations of methanol in air at different operating temperatures. At 300 °C the film exhibits a very high response 99% to methanol vapor at a concentration of 40 ppm in air, which is ideal to be used as a methanol sensor. The film shows fast response and recovery to methanol vapor at higher operating temperatures. A possible methanol sensing mechanism has been proposed.     

Low-temperature synthesis and microwave dielectric properties of trirutile-structure MgTa2O6 ceramics by aqueous sol–gel process

Trirutile-structure MgTa₂O₆ ceramics were prepared by aqueous sol–gel method and microwave dielectric properties were investigated. Highly reactive nanosized MgTa₂O₆ powders were successfully synthesized at 500 °C in oxygen atmosphere with particle sizes of 20–40 nm. The evolution of phase formation was detected by DTA–TG and XRD. Sintering characteristic and microwave dielectric properties of MgTa₂O₆ ceramics were studied at different temperatures ranging from 1100 to 1300 °C. With the increase of sintering temperature, density, ?_r and Q · f values increased and saturated at 1200 °C with excellent microwave properties of ?_r ～ 30.1, Q · f ～ 57,300 GHz and τ_f ～ 29 ppm/°C. The sintering temperature of MgTa₂O₆ ceramics was significantly reduced by aqueous sol–gel process compared to conventional solid-state method.     

The effects of deposition temperature on structure and dielectric properties of Ba0.6Sr0.4TiO3 thin films produced by pulsed laser deposition

The effects of deposition temperature on orientation, surface morphology and dielectric properties of the thin films for Ba_0.6Sr_0.4TiO₃ thin films deposited on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition were investigated. X-ray diffraction patterns revealed a (2 1 0) preferred orientation for all the films. With rising substrate temperature from 650 °C to 700 °C, the crystallinity and crystal grain size of the films increase, the relative dielectric constant increases, but the dielectric losses have not obvious difference. The film deposited at 350 °C and annealed at 700 °C has strongly improved roughness and dielectric permittivity compared with the film only deposited directly at 700 °C. Three distinct relaxation processes within tan(δ) were found for the Ba_xSr_1?xTiO₃ film: a broadened process of the film relaxation, an intermediate peak which originates from Maxwell–Wagner–Sillars polarization, and an extremely slow process ascribed to leak current. The complex dielectric permittivity and loss can be fitted by an improved Cole–Cole model corresponding to a stretched relaxation function.     

Synthesis and characterization of a cross-linkable nonlinear optical polymer functionalized with a thiophene- and tricyanovinyl-containing chromophore

This paper reports a novel nonlinear optical polymer BP-AVT-TCV functionalized with a thiophene- and tricyanovinyl-substituted chromophore. BP-AVT-TCV was synthesized by the post-tricyanovinylation of an epoxy-based precursor polymer BP-AVT, and had a high molar functionalization degree of chromophore (70 mol.%). It had an enhanced glass transition temperature (T_g = 164 °C) compared with BP-AVT (T_g = 114 °C), and a high decomposition temperature (T_d,5% = 295 °C). BP-AVT-TCV was further cross-linked to achieve the three-dimensional (3D) network of thermosetting polyurethane (PU). The poled PU films revealed an electro-optic (EO) coefficient (γ₃₃) value of 21 pm/V at a wavelength of 1315 nm. The structures of the polymers were confirmed by FT-IR, UV–Vis, and ¹H NMR spectra.     

Pulsed-laser deposited amorphous-like PZT thin-films: Microstructure and optical properties

Amorphous lead–zirconate–titanate (Pb_0.97Nd_0.02(Zr_0.55Ti_0.45)O₃, PNZT) thin-films were grown on single-crystal MgO(1 0 0) substrates at room temperature by pulsed laser deposition (PLD). Part of PNZT films was left as-deposited amorphous and others were post-annealed at temperatures from 100 to 400 °C. X-ray diffraction (XRD) and scanning probe microscopy (SPM) were used to characterize the microstructure. Optical properties were analyzed using spectrophotometry at UV–vis–NIR and prism-coupler method at 633 nm wavelengths. Initially, films were amorphous with a broad XRD peak around 2θ ≈ 29.7°. As the post-annealing temperature increased above 250 °C, the amorphous peak started to shift towards lower 2θ-angles and got narrower indicating of decreasing interatomic spacing and possible glass transformation. At the same time, the transmittance at all wavelengths increased remarkably, although no crystal structure was detected by XRD. Also, sharp optical TE₀ modes with full-width half-maximum (FWHM) values of Δβ ≈ 0.00067 could be coupled into these films.     

Synthesis of Na-doped ZnO nanowires and their antibacterial properties

Na-doped ZnO nanowires with an average diameter of ~ 40 nm have been fabricated by a thermal decomposition route at temperatures around 400 °C. Their properties have been investigated using X-ray diffraction, field emission scanning electron microscope, Raman spectra, photoluminescence spectra and X-ray photoelectron spectra. Photoluminescence spectra showed that the as-synthesized ZnO samples exhibited strong visible emission with a major peak at 420 nm. Furthermore, intensity of the visible emission at 420 nm enhanced as the increase of Na concentration. The improvement of visible emission in the Na-doped ZnO samples should be a result of the surface defects increased by doping of Na in ZnO. Their antibacterial activities were also evaluated by determination of minimum inhibitory concentration (MIC) against Escherichia coli 25922 in vitro. Antibacterial tests indicated these nanomaterials showed good antibacterial properties after UV illumination for a short time.     

Synthesis and microwave dielectric properties of pseudobrookite-type structure Mg5Nb4O15 ceramics by aqueous sol–gel technique

Pseudobrookite-type Mg₅Nb₄O₁₅ ceramics were prepared by aqueous sol–gel process and microwave dielectric properties were investigated. Highly reactive nanosized Mg₅Nb₄O₁₅ powders were successfully synthesized at 600 °C in oxygen atmosphere with particle sizes of 20–40 nm firstly and then phase evolution was detected by DTA-TG and XRD. Sintering characteristics and microwave dielectric properties of Mg₅Nb₄O₁₅ ceramics were studied at different temperatures ranging from 1200 °C to 1400 °C. With the increase of sintering temperature, density, ?_r and Q·f values increased, and then saturated at 1300 °C. Excellent microwave properties of ?_r ～11.3, Q·f ～43,300 GHz and τ_f ～?58 ppm/°C, were obtained finally. The sintering temperature of Mg₅Nb₄O₁₅ ceramics was significantly reduced by aqueous sol–gel process compared to conventional solid-state methods.     

Facile synthesis of AlOx dielectrics via mist-CVD based on aqueous solutions

Aluminum oxide (AlO_x) thin films were synthesized by mist-chemical vapor deposition (mist-CVD) using aluminum acetylacetonate (Al(acac)₃) dissolved in an aqueous solvent mixture of acetone and water. Nitrogen gas was used to purge the precursor solution and growth rates between 7.5–13.3 nm/min were achieved at substrate temperatures of 250–350 °C. The AlO_x layers deposited at temperatures below 350 °C exhibit 3–5 at% residual carbon levels, however those grown at 350 °C exhibit only 1–2 at% carbon impurity. Reasonable dielectric properties were obtained in the latter, with a dielectric constant (κ) of ~ 7.0, breakdown field of ~ 9 MV/cm and relatively low leakage current density of ~ 8.3×10⁻¹⁰ A/cm².     

Microwave dielectric properties of the (BaxSr1−x)TiO3 thin films on alumina substrate

Barium strontium titanate, (Ba_xSr_1?x)TiO₃ (BST) thin films have been prepared on alumina substrate by sol–gel technique. The X-ray patterns analysis indicated that the thin films are perovskite and polycrystalline structure. The interdigital electrode with 140 nm thickness Au/Ti was fabricated on the film with the finger length of 80 μm, width of 10 μm and gaps of 5 μm. The temperature dependence of dielectric constant of the BST thin films in the range from ?50 °C to 50 °C was measured at 1 MHz. The dielectric properties of the BST thin films were measured by HP 8510C vector network analyzer from 50 MHz to 20 GHz.     

Aqueous chemical route deposition of nanocrystalline ZnO thin films as acetone sensor: Effect of molarity

Nanocrystalline ZnO thin films were deposited onto glass substrate using a simple and inexpensive aqueous chemical method at low temperature (90 °C). The concentration of precursor solution was varied in order to study its effect on structural, morphological, and gas response properties. Field-emission scanning electron microscopy (FESEM) images indicate the growth of ZnO with hexagonal shaped nanostructure. Further these films were used to explore gas response properties towards acetone, propanol and ethanol vapors. The sensor response was found to be decreased with increase in precursor concentration. The highest sensor response of 92% was observed towards acetone for the film deposited at 0.05 M at an operating temperature of 350 °C. The higher vapor response towards acetone is attributed to size and surface morphology of the film deposited at 0.05 M.     

Effects of annealing temperature on the microstructure,optical, ferroelectric and photovoltaic properties of BiFeO3 thin films prepared by sol–gel method

Bismuth ferrite thin films were prepared via sol–gel spin-coating method and the effects of annealing temperature on microstructure, optical, ferroelectric and photovoltaic properties have been investigated. The results show that the bismuth ferrite thin films annealed at 550 °C is single phase and the grain size increases with the rise of annealing temperature. The band gap of bismuth ferrite thin films annealed at 550–650 °C is between 2.306 eV and 2.453 eV. With the rise of the annealing temperature, the remnant polarization gradually decreases and the coercive electric field increases. The short circuit photocurrent density decreases with the rise of annealing temperature, and the open circuit photovoltage and the power conversion efficiency of bismuth ferrite thin films annealed at 550 °C are higher than the thin films annealed at higher temperature.