Low-temperature sintering and microwave dielectric properties of Nd(Co1/2Ti1/2)O3 ceramics using glass addition of oxides

The microstructures and microwave dielectric characteristics of complex perovskite Nd(Co_1/2Ti_1/2)O₃ ceramics with 60P₂O₅–15ZnO–5La₂O₃–5Al₂O₃–5Na₂O–5MgO–5Yb₂O₃ (PZLANMY) additions (1–4 wt%) prepared through the conventional solid-state route were investigated. It was found that Nd(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1210 °C owing to the sintering aid of PZLANMY-glass addition. At 1300 °C, Nd(Co_1/2Ti_1/2)O₃ ceramics with 1 wt% of PZLANMY-glass addition possess a dielectric constant (ε_r) of 27, a Q×f value of 64,000 GHz and a temperature coefficient of resonant frequency (τ_f) of ?29 ppm/°C. The PZLANMY-glass doped Nd(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices that require low sintering temperature.     

Low temperature sintering of the Ba2Ti9O20 ceramics using B2O3/CuO and BaCu(B2O5) additives

The effects of B₂O₃/CuO and BaCu(B₂O₅) additives on the sintering temperature and microwave dielectric properties of Ba₂Ti₉O₂₀ ceramics were investigated. The B₂O₃ added Ba₂Ti₉O₂₀ ceramics were not able to be sintered below 1000 °C. However, when both CuO and B₂O₃ were added, they were sintered below 900 °C and had the good microwave dielectric properties. It was suggested that a liquid phase with the composition of BaCu(B₂O₅) was formed during the sintering and assisted the densification of the Ba₂Ti₉O₂₀ ceramics at low temperature. BaCu(B₂O₅) powders were produced and used to reduce the sintering temperature of the Ba₂Ti₉O₂₀ ceramics. Good microwave dielectric properties of Qxf = 16,000 GHz, ɛ_r = 36.0 and τ_f = 9.11 ppm/°C were obtained for the Ba₂Ti₉O₂₀ ceramics containing 10.0 mol% BaCu(B₂O₅) sintered at 875 °C for 2 h.     

Effect of B2O3 and CuO additives on the sintering temperature and microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 ceramics

The B₂O₃ added Ba(Zn_1/3Nb_2/3)O₃ (BBZN) ceramic was sintered at 900 °C. BaB₄O₇, BaB₂O₄, and BaNb₂O₆ second phases were found in the BBZN ceramic. Since BaB₄O₇ and BaB₂O₄ second phases have an eutectic temperature around 900 °C, they might exist as the liquid phase during sintering at 900 °C and assist the densification of the BZN ceramics. Microwave dielectric properties of dielectric constant (ɛ_r) = 32, Q × f = 3500 GHz, and temperature coefficient of resonance frequency (τ_f) = 20 ppm/°C were obtained for the BZN with 5.0 mol% B₂O₃ sintered at 900 °C for 2 h. The BBZN ceramics were not sintered below 900 °C and the microwave dielectric properties of the BBZN ceramics sintered at 900 °C were very low. However, when CuO was added, BBZN ceramic was well sintered even at 875 °C. The liquid phase related to the BaCu(B₂O₅) second phase could be responsible for the decrease of sintering temperature. Good microwave dielectric properties of ɛ_r = 36, Q × f = 19,000 GHz and τ_f = 21 ppm/°C can be obtained for CuO doped BBZN ceramics sintered at 875 °C for 2 h.     

Microwave dielectric properties and low-temperature sintering of Ba3Ti4Nb4O21 ceramics with B2O3 and CuO additions

The low sintering temperature and the good dielectric properties such as high dielectric constant (ɛ_r), high quality factor (Q × f) and small temperature coefficient of resonant frequency (τ_f) are required for the application of chip passive components in the wireless communication technologies. In the present study, the sintering behaviors and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics were investigated as a function of B₂O₃–CuO content. Ba₃Ti₄Nb₄O₂₁ ceramics with B₂O₃ or CuO addition could be sintered above 1100 °C. However, the additions of both B₂O₃ and CuO successfully reduced the sintering temperature of Ba₃Ti₄Nb₄O₂₁ ceramics from 1350 to 900 °C without detriment to the microwave dielectric properties. From the X-ray diffraction (XRD) studies, the sintering behaviors and the microwave dielectric properties of low-fired Ba₃Ti₄Nb₄O₂₁ ceramics were examined and discussed in the formation of the secondary phases. The Ba₃Ti₄Nb₄O₂₁ sample with 1 wt% B₂O₃ and 3 wt% CuO addition, sintered at 900 °C for 2 h, had the good dielectric properties: ɛ_r = 65, Q × f = 16,000 GHz and τ_f = 101 ppm/°C.     

Effects of Li2CO3 and Sm2O3 additives on low-temperature sintering and piezoelectric properties of PZN-PZT ceramics

To assist the development of applications for multilayer piezoelectric devices, the low-temperature sintering piezoelectric ceramics of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ with Li₂CO₃ and Sm₂O₃ additives were fabricated by a conventional solid-state reaction, and their structural and piezoelectric properties were studied. With the addition of Li₂CO₃, the minimum sintering temperature of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramics was reduced from 1125 °C to 950 °C through the formation of a liquid phase and its piezoelectric properties showed almost no degradation. When the sintering temperature was below 950 °C, however, the piezoelectric properties degraded obviously. The additional Sm₂O₃ resulted in a significant improvement in the piezoelectric properties of 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ ceramic with added Li₂CO₃. When sintered at 900 °C, the optimized properties of the 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb(Zr_0.49Ti_0.51)O₃ piezoelectric ceramic with 0.3 wt% Li₂CO₃ and 0.3 wt% Sm₂O₃ were obtained as d₃₃ = 483 pC/N, k₃₁ = 0.376, Q_m = 73, ɛ_r = 2524, tan δ = 0.0178.     

Low temperature sintering of BaCu(B2O5)-added BaO–Re2O3–TiO2 (Re = Sm,Nd) ceramics

The sintering temperature of BaSm₂Ti₄O₁₂ (BST) and BaNd₂Ti₅O₁₄ (BNT) ceramics was approximately 1350 °C and decreased to 875 °C with the addition of BaCu(B₂O₅) (BCB) ceramic powder. The presence of the liquid phase was responsible for the decrease of the sintering temperature. The liquid phase is considered to have a composition similar to the BaO-deficient BCB. The bulk density and dielectric constant (ɛ_r) of the specimens increased and reached saturated value with increasing BCB content. The Q-value initially increased with the addition of BCB, but decreased considerably when a large amount of BCB was added, because of the presence of the liquid phase. Good microwave dielectric properties of Q × f = 4500 GHz, ɛ_r = 60 and τ_f = −30 ppm/°C were obtained for the 16.0 mol% BCB-added BST ceramics sintered at 875 °C for 2 h. Moreover, the BST and BNT ceramics containing BCB show good compatibility with silver metal.     

Microwave dielectric properties of Ca(Li1/4Nb3/4)O3–CaTiO3 ceramic systems

The microwave dielectric properties of Ca(Li_1/4Nb_3/4)O₃–CaTiO₃ ceramics have been investigated with regard to calcination temperature and the amount of CaTiO₃ additive. Ca(Li_1/4Nb_3/4)O₃ ceramics with an orthorhombic crystal structure can be synthesized by the conventional mixed oxide method by calcining at 750 °C and sintering at 1275 °C. The dielectric constant (ɛ_r), quality factor (Q × f₀) and temperature coefficient of resonant frequency (τ_f) for Ca(Li_1/4Nb_3/4)O₃ ceramics are 26, 13,000 GHz and −49 ± 2 ppm/°C, respectively. With increase in the CaTiO₃ content, ɛ_r and τ_f are increased and the quality factor decreased due to the solid-solution formation between Ca(Li_1/4Nb_3/4)O₃ and CaTiO₃. The 0.7Ca(Li_1/4Nb_3/4)O₃–0.3CaTiO₃ ceramic exhibits ɛ_r of 44, quality factor (Q × f₀) of 12,000 GHz and τ_f of −9 ± 1 ppm/°C.     

Characterization and dielectric behavior of willemite and TiO2-doped willemite ceramics at millimeter-wave frequency

Willemite ceramics (Zn₂SiO₄) have been successfully prepared in the temperature range from 1280 to 1340 °C. It is found that willemite ceramics possess excellent millimeter-wave dielectric properties: a dielectric constant ɛ_r value of 6.6, a quality factor Q × f value of 219,000 GHz and a temperature coefficient of resonant frequency τ_f value of −61 ppm/°C. By adding TiO₂ with large positive τ_f value (450 ppm/°C), near zero τ_f value can be achieved in a wide sintering temperature range. With 11 wt% of TiO₂, an ɛ_r value of 9.3, a Q × f value of 113,000 GHz, and a τ_f value of 1.0 ppm/°C are obtained at 1250 °C. The relationships between microstructure and properties are also studied. Our results show that willemite with appropriate TiO₂ is an ideal temperature stable, low ɛ_r and high Q × f dielectric for millimeter-wave application.     

Effect of B2O3 on the sintering and microwave dielectric properties of M-phase LiNb0.6Ti0.5O3 ceramics

The effect of B₂O₃ addition on the sintering, microstructure and the microwave dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics have been investigated. It is found that low-level doping of B₂O₃ (≤2 wt.%) can significantly improve the densification and dielectric properties of LiNb_0.6Ti_0.5O₃ ceramics. Due to the liquid phase effect of B₂O₃ addition, LiNb_0.6Ti_0.5O₃ ceramics could be sintered to a theoretical density higher than 95% even at 880 °C. No secondary phase was observed for the B₂O₃-doped ceramics. There is no obvious degradation in dielectric properties for the ceramics with B₂O₃ additions. In the case of 1 wt.% B₂O₃ addition, the ceramics sintered at 880 °C show good microwave dielectric properties of ɛ_r = 70, Q × f = 5400 GHz, τ_f = −6.39 ppm/°C. It represents that the ceramics could be promising for multilayer low-temperature co-fired ceramics (LTCC) applications.     

Microwave dielectric properties of LiNb3O8 ceramics with TiO2 additions

The microwave dielectric properties of LiNb₃O₈ ceramics were investigated as a function of the sintering temperature and the amount of TiO₂ additive. LiNb₃O₈ ceramics, which were calcined at 750 °C and sintered at 1075 °C for 2 h, showed a dielectric constant (ɛ_r) of 34, a quality factor (Q × f₀) of 58,000 GHz and a temperature coefficient of resonance frequency (τ_f) of −96 ppm/°C, respectively. The density of the samples influenced the properties of these properties. As the TiO₂ content increased in the LiNb₃O₈–TiO₂ system, ɛ_r and τ_f of the material were increased due to the mixing effect of TiO₂ phase, which has higher dielectric constant and larger positive τ_f. The 0.65LiNb₃O₈–0.35TiO₂ ceramics showed a dielectric constant ɛ_r of 46.2, a quality factor (Q × f₀) of 5800 GHz and a temperature coefficient of resonance frequency τ_f of near to 0 ppm/°C.     

Effects of microwave sintering on the properties of 0.87(Mg0.7Zn0.3)TiO3–0.13(Ca0.61La0.26)TiO3 ceramics

0.87(Mg_0.7Zn_0.3)TiO₃–0.13(Ca_0.61La_0.26)TiO₃ (referred to as 87MZCLT) ceramics were prepared by microwave sintering and conventional sintering. The experimental results demonstrated that the sintering cycle of 87MZCLT ceramics was greatly shortened and the impurity phase (Mg_0.7Zn_0.3)Ti₂O₅ was eliminated by microwave sintering. Moreover, the 87MZCLT ceramics prepared by microwave sintering show more uniform, fine-grained microstructure as well as much less Zn evaporation. As a result, the quality factor was increased by 40% compared with conventional sintering. All samples were sintered at 1275 °C for 20 min with heating and cooling rate of 15 °C/min and gave excellent microwave dielectric properties: ?_r = 26.21, Q × f = 120,000 GHz, τ_f = ?3 ppm/°C.     

Low temperature sintering and microwave dielectric properties of Ba3Ti5Nb6O28 with ZnO–B2O3 glass additions for LTCC applications

The effects of ZnB₂O₄ glass additions on the sintering temperature and microwave dielectric properties of Ba₃Ti₅Nb₆O₂₈ have been investigated using dilatometer, X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy and a network analyzer. The pure Ba₃Ti₅Nb₆O₂₈ system showed a high sintering temperature (1250 °C) and had the good microwave dielectric properties: Q × f of 10,600 GHz, ɛ_r of 37.0, τ_f of −12 ppm/°C. It was found that the addition of ZnB₂O₄ glass to Ba₃Ti₅Nb₆O₂₈ lowered the sintering temperature from 1250 to 925 °C. The reduced sintering temperature was attributed to the formation of ZnB₂O₄ liquid phase and B₂O₃-rich liquid phases. Also the addition of ZnB₂O₄ glass enhanced the microwave dielectric properties: Q × f of 19,100 GHz, ɛ_r of 36.6, τ_f of 5 ppm/°C. From XPS and XRD studies, these phenomena were explained in terms of the reduction of oxygen vacancies and the formation of secondary phases having the good microwave dielectric properties.     

Structural,chemical and dielectric properties of ceramic injection moulded Ba(Zn1/3Ta2/3)O3 microwave dielectric ceramics

We report the development of a ceramic injection moulding (CIM) process to produce complex-shaped structures using high-performance microwave ceramic materials. In particular, we describe the synthesis methods and the structural, chemical and dielectric properties of Ba(Zn_1/3Ta_2/3)O₃ (BZT) doped with Ni and Zr ceramics produced using ceramic injection moulding. Sintering the ceramic injection moulded Ba(Zn_1/3Ta_2/3)O₃ to a relative density of ∼94% was possible at a temperature of 1680 °C and a time of 48 h. The best samples to date exhibit a dielectric constant, ɛ_r, of ∼30, a Q value, of ∼31,250 (i.e. tan δ < 3.2 × 10⁻⁵) at 2 GHz, and a temperature coefficient of resonance frequency, τ_f, of 0.1 ppm/°C.     

Effect of nonstoichiometry on the microstructure and microwave dielectric properties of Ba(Mg1/2W1/2)O3 ceramics

Effects of nonstoichiometry on crystal structure and the microstructure of double perovskite Ba(Mg_1/2W_1/2)O₃ ceramics have been investigated by X-ray powder diffraction (XRD), scanning electron microscopy (SEM) and Raman spectrometry in this paper. The microwave dielectric properties of the ceramics were studied with a network analyzer at the frequency of about 8–11 GHz. The results show that small deviation from stoichiometric composition has little influence on the crystal structure such as B-site 1:1 ordering degree. Evaporation of BaO was confirmed during the sintering of BMW ceramics, which in turn produce more BaWO₄ phase. Ba-deficiency or W-excess in BMW could improve the sinterability and Q×f value, while Ba-excess or W-deficiency could suppress the formation of BaWO₄ at the expense of increase in sintering temperature and decrease in Q×f value. Mg nonstoichiometry has little effect on the variation of BaWO₄ content and Q×f value. Maximum Q×f value of about 140,000 GHz could be obtained for the Ba-deficient or W-excessive samples after sintering at 1500 °C/2 h or 1550 °C/2 h, respectively. All Mg-nonstoichiometric compositions exhibit high Q×f value of about 120,000 GHz after sintering at 1550 °C/2 h. All well-densified samples have dielectric permittivity of about 19–20 and τ_f value varied within the range of ?21～?28 ppm/°C.     

Crystal structure–microwave dielectric property relations in Sm(Nb1−xTax)(Ti1−yZry)O6 ceramics

The effects of the Ta substitution for Nb and the Zr substitution for Ti on the microwave dielectric properties and crystal structure of Sm(Nb_1−xTa_x)(Ti_1−yZr_y)O₆ ceramics were investigated in this study. The Sm(Nb_1−xTa_x)TiO₆ (x = 0–1) ceramics were single phase, whereas the limit of solid solutions for the SmTa(Ti_1−yZr_y)O₆ ceramics was y = 0.4. In the case of the Sm(Nb_1−xTa_x)TiO₆ ceramics, the dielectric constant and the temperature coefficient of resonant frequency were decreased, whereas the quality factor was increased by the Ta substitution for Nb. The maximum Q · f value was obtained when the SmTaTiO₆ was synthesized, and the microwave dielectric properties are, ɛ_r = 37.6; τ_f = 24.2 ppm/°C; and Q · f = 24541 GHz. On the other hand, the dielectric constants of the SmTa(Ti_1−yZr_y)O₆ ceramics were decreased from 37.6 to 28.9, whereas the quality factor was increased from 24541 to 38320 GHz with increasing composition y from 0 to 0.4. The temperature coefficient of resonant frequency of the ceramics varied from 24.2 to −11.6 ppm/°C. A near zero temperature coefficient of resonant frequency results from the composition of y = 0.3 with a dielectric constant of 31.1 and Q · f value of 37481 GHz.     

Microwave dielectric properties and microstructures of Nb2O5-Zn0.95Mg0.05TiO3 + 0.25TiO2 ceramics with Bi2O3 addition

The effects of Bi₂O₃ addition on the microwave dielectric properties and the microstructures of Nb₂O₅-Zn_0.95Mg_0.05TiO₃ + 0.25TiO₂ (Nb-ZMT′) ceramics prepared by conventional solid-state routes have been investigated. The results of X-ray diffraction (XRD) indicate the presence of four crystalline phases, ZnTiO₃, TiO₂, Bi₂Ti₂O₇, and (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ in the sintered ceramics, depending upon the amount of Bi₂O₃ addition. In addition, in order to confirm the existence of (Bi_1.5Zn_0.5)(Ti_1.5Nb_0.5)O₇ phase in the samples, the microstructure of Nb-ZMT′ ceramic with 5 wt.% B₂O₃ addition was analyzed by using a transmission electron micrograph. The dielectric constant of Nb-ZMT′ samples was higher than ZMT′ ceramics. The Nb-ZMT′ ceramic with 5 wt.% Bi₂O₃ addition exhibits the optimum dielectric properties: Q × f = 12,000 GHz, ?_r = 30, and τ_f = ?12 ppm/°C. Unlike the ZMT′ ceramic sintered at 900 °C, the Nb-ZMT′ ceramics show higher Q value and dielectric constant. Moreover, there is no Zn₂TiO₄ existence at 960 °C sintering. To understand the co-sinterability between silver electrodes and the Nb-ZMT′ dielectrics, the multilayer samples are prepared by multilayer thick film processing. The co-sinterability (900 °C) between silver electrode and Nb-ZMT′ dielectric are well compatible, because there are no cracks, delaminations, and deformations in multilayer specimens.     

Effect of dopants on synthesis of BaTi4O9 and Ba2Ti9O20 ceramics prepared by reaction-sintering process

The effect of dopants on BaTi₄O₉ (BT4) and Ba₂Ti₉O₂₀ (B2T9) ceramics by the reaction-sintering process was investigated. CuO addition is more effective in lowering the sintering temperature of BT4 and B2T9 ceramics. MnO₂ and CuO addition are effective to obtain temperature stable BT4 ceramics. With MnO₂ addition, Q × f of BT4 ceramics could be raised. ZrO₂ addition is effective to obtain B2T9 ceramics with higher dielectric constant. With CuO addition, τ_f of B2T9 ceramics shifted toward negative values and 0 ppm/°C could be obtained. Optimum properties in BT4 doped with MnO₂ of ɛ_r = 37.1, Q × f = 51,200 GHz (at 7 GHz) and τ_f = 0 ppm/°C and in B2T9 doped with ZrO₂ of ɛ_r = 37.9, Q × f = 39,700 GHz (at 7 GHz) and τ_f = 5.9 ppm/°C were obtained.     

Microwave dielectric properties of nanocrystalline TiO2 prepared using spark plasma sintering

TiO₂ bulk ceramics were fabricated by using both spark plasma sintering (SPS) and the conventional sintering method (CSM). Starting materials were ultra fine rutile powders (<50 nm) prepared via the sol–gel process. CSM achieved the relative sintering density of 99.2% at 1300 °C. The grain size of 1300 °C sintered specimen was 6.5 μm. However, the sintering temperature of SPS for the density of 99.1% was as low as 760 °C, where the grain size was only 300 nm. In order to re-oxidize the Ti³⁺ ions due to the reducing atmosphere of the SPS process and the high temperature of the CSM process, the prepared TiO₂ specimens were annealed in an oxygen atmosphere. The dielectric constant (ɛ_r) and quality factor (Q × f) of SPS-TiO₂ re-oxidized specimens in a microwave regime were 112.6 and 26,000, respectively. These properties were comparable to those of 1300 °C sintered CSM specimens (ɛ_r ∼ 101.3, Q × f ∼ 41,600). These microwave dielectric properties of nanocrystalline TiO₂ specimens prepared using SPS were discussed in terms of grain size variation and Ti⁴⁺ reduction.     

Property improvement of 0.3Pb(Zn1/3Nb2/3)O3-0.7Pb0.96La0.04(ZrxTi1−x)0.99O3 ceramics by hot-pressing

The piezoelectric ceramics of the compositions expressed by the formula: 0.3Pb(Zn_1/3Nb_2/3)O₃-0.7Pb_0.96La_0.04(Zr_xTi_1−x)_0.99O₃ (x = 0.50–0.53) were prepared by two kind of sintering processes: conventional sintering (CS) and hot-pressing (HP) sintering. By comparing the properties of these two series of ceramics, piezoelectric coefficients (d₃₃), electromechanical coupling factors (k_p), dielectric constants (ɛ_r), etc. were enormously improved by HP sinter procedure, which can be attributed to the highly dense microstructure (bulk density >99%). The most impressive results are the d₃₃ (845pC/N) and k_p (0.703) in the HP specimen with Zr/Ti = 51/49, which have not been observed in the previous relative reports. Additionally, according to the contrast of the experiment data, the origin of the property improvement was analyzed in details.     

Structure and dielectric properties of perovskite ceramics in the system Ba(Ni1/3Nb2/3)O3–Ba(Zn1/3Nb2/3)O3

Ceramics in the system Ba(Ni_1/3Nb_2/3)O₃–Ba(Zn_1/3Nb_2/3)O₃ (BNN–BZN) were prepared by the mixed oxide route. Powders were mixed and milled, calcined at 1100–1200 °C then pressed and sintered at temperatures in the range 1400–1500 °C for 4 h. Selected samples were annealed or slowly cooled after sintering. Most products were in excess of 96% theoretical density. X-ray diffraction confirmed that all specimens were ordered to some degree and could be indexed to hexagonal geometry. Microstructural analysis confirmed the presence of phases related to Ba₅Nb₄O₁₅ and Ba₈Zn₁Nb₆O₂₄ at the surfaces of the samples. The end members BNN and BZN exhibited good dielectric properties with quality factor (Qf) values in excess of 25,000 and 50,000 GHz, respectively, after rapid cooling at 240 °C h⁻¹. In contrast, mid-range compositions had poor Qf values, less than 10,000 GHz. However, after sintering at 1450 °C for 4 h and annealing at 1300 °C for 72 h, specimens of 0.35(Ba(Ni_1/3Nb_2/3)O₃)–0.65(Ba(Zn_1/3Nb_2/3)O₃) exhibit good dielectric properties: τ_f of +0.6 ppm °C⁻¹, relative permittivity of 35 and quality factor in excess of 25,000 GHz. The improvement in properties after annealing is primarily due to an increase in homogeneity.