开关电源倍流同步整流器的研究

在开关电源的实际应用中,MOSFET的寄生电容、栅极电感、漏源极电感,变压器漏感以及电路布线产生的寄生参数,对电路工作状态有很大的影响。对此介绍了倍流同步整流器的工作原理和过程。并对倍流同步整流器的基本结构控制方式进行了分析比较。通过对倍流同步整流器在3种不同的信号驱动下的波形观测比较和对电路中寄生参数对电路的影响进行了仔细的研究和分析,从而得出了较好的驱动方式。     

使用单位增益缓冲器构成的抗寄生SC跨导

用单位增益缓冲器构成的开关电容滤波器(SCF),若能消除寄生电容引起的阻性寄生,则可用于高频设计,总寄生灵敏度会因此大大降低。本文在此基础上提出一种新的抗寄生开关电容(SC)跨导元件电路差分跨导元件,并用它构成了适用于高频的SC浮地电感和积分器。最后用它实现了一个三阶椭圆函数低通滤波器,并经计算机模拟和实验验证,证明了该方案的正确性。     

PCB布线设计(之三)

寄生元件危害最大的情况印刷电路板布线产生的主要寄生元件包括:寄生电阻、寄生电容和寄生电感。例如:PCB的寄生电阻由元件之间的走线形成;电路板上的走线、焊盘和平行走线会产生寄生电容;寄生电感的产生途径包括环路电感、互感和过孔。当将电路原理图转化为实际的PCB时,所有这些寄生元件都可能对电路的有效性产生干扰。本文将对最棘手的电路板寄生元件类型—寄生电容进行量化,并提供一个可清楚看到寄生电容对电路性能影响的示例。寄生电容的危害大多数寄生电容都是靠近放置两条平行走线引起的。可以采用图1所示的公式来计算这种电容值。…     

功率模块是低感应系统设计的关键因素

在高频开关电源应用上寄生电感经常会导致开关装置产生过电压并增加半导体器件的判断损耗。通过引入智能功率模块的设计概念，可以减小系统的总电感、电压应力以及开关损耗。本文介绍了新型功率模块的概念以及其在PCB级电路上的应用，还介绍了新型功率模块所带来的寄生电感，关断过电压以及开关损耗的改进效应。     

开关电源的RLC损耗

在对开关电源的电路拓扑或电源控制器做优化时要考虑输出电压、输入电压范围以及最大负载电流等参数。有些电源厂商还会提供更多的设计参考方案,包括电感、MOSFET的电压/电流参数、输入输出电容的型号和容值等。电源控制器的数据手册通常都会给出完整的电路原理图,包括经过验证的外围器件,这有助于加快用户的设计。即使这样,电路也有进一步优化的余地。比如,在这种标准设计方案中一般都没有考虑到外围器件的寄生参数对转换效率的影响。本文将主要讨论电阻、电感和电容的寄生参数对开关电源效率的影响,并给出一些选择器件时的注意事项。电…     

寄生参数对EMI滤波器性能的影响

本文在高频状态下,利用电容器寄生电感之间的耦合,提高了滤波器的高频性能,并在差模等效电路的基础上作了仿真。结果表明,利用电容器的寄生电感之间的耦合能够改善滤波器的高频性能。     

基于UC3844反激式开关电源的设计

设计了一种基于UC3844的反激式多路输出开关电源,采用工业上常用的DC12~18 V输入,输出2路24 V/300 mA。此开关电源充分利用高频变压器原边绕组特性,把反馈绕组与供电绕组合二为一,简化了外围硬件电路,同时充分考虑了其成本和体积大小,除消除高频杂波用的共模电感、功率电阻、输出整流二极管及滤波电解电容外,其余元器件均采用贴片,最后经实验进一步测试并验证了此开关电源稳定且可靠。     

高频变压器分布参数的实验研究

高频变压器是开关电源最重要的组成部分,在系统中起着能量传输、电压匹配以及电路隔离的作用。因此在大功率开关电源中高频变压器性能的好坏是整个系统设计的关键。针对高频变压器性能中分布参数对系统带来的不利影响,在传统变压器模型的基础上建立了高频变压器的电路等效模型,通过理论分析高频变压器分布参数的变化规律,得出减小变压器漏感与分布电容的具体措施。最后通过实验证明这些措施对于变压器分布参数起到了较好的抑制作用。     

基于二极管技术优化射频集成电路的ESD

在CMOS集成电路设计中,工艺尺寸不断减小、栅氧厚度不断变薄,对ESD提出更高的要求。尤其在射频集成电路中,ESD的寄生电容对射频性能将产生不可忽略的影响。基于二极管正向偏置对ESD电流的泄放能力,通过引入电感和电容对ESD脉冲的精确模拟,通过设计有效的有源RC电源钳位电路,考虑到版图电阻电容寄生对ESD的射频性能的影响,提出3种版图设计,对各种版图进行了仿真,分析ESD和射频性能,提出了最优的版图,满足射频集成电路应用的ESD保护电路。     

Blumlein快放电电路传输线电容和储能电容的研制

为减小Blum lein电路中的寄生电阻与电感,自行设计了传输线电容与储能电容,以平行平板电容器结构代替了原来的无感电容与传输线电容的结构,使得电路中寄生电感下降1倍以上,电路性能得到很大改进,满足了S2激光器产生辉光放电的要求.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.