滤波器在音频DAC测试中的应用

本文给出了模拟滤波器在使用ATE（Automatic Test Equipment自动测试设备）进行高精度音频DAC（数模转换器）测试中的应用,该方法提高了测试准确度,满足了芯片量产测试的需求。论文首先介绍了DAC在ATE上的基本测试方法,然后讨论了应用滤波器的音频DAC测试方案,最后通过Matlab数学仿真和搭建电路对实际的芯片进行测试,证明了该方案的有效性。     

低噪声放大器的自动测试开发

如何快速又精确地输出低噪声放大器的测试值并使测试值符合测试规范是研究重点。基于多个测试仪器对低噪声放大器的特性参数进行测试开发。矢量网络分析仪完成S参数的测试,噪声测试仪完成噪声系数测试,信号源与频谱仪配合完成三阶交调交叉点测试,信号源与功率计配合完成1 d B增益压缩点测试。通过GPIB或TCP/IP实现仪器通信,使用计算机编程对整个流程实现自动控制,最后将测试结果返回计算机并显示,测试结果符合规范。实验证明,在实际应用中该方法快速精确并具有很好的通用性,可拓展到其他芯片的测试。     

DDS自动测试技术研究

重点研究了如何快速又精确地输出DDS的测试值并使测试值符合测试规范.基于NI卡板、信号分析仪、示波器和信号发生器,对DDS的特性参数进行测试研究.信号发生器提供时钟信号与比较器输入;信号分析仪对频域和调制域信号进行测试;示波器对时域信号进行测试;通过IabViEW编程得到DAC数字正弦波和输入数字码并实现测试自动化;最后将结果返回计算机,测试结果符合规范.实验证明,在实际应用中该方法快速精确并具有很好的通用性,可拓展到其他芯片的测试.     

高速D/A转换器动态参数测试方法研究

对基于逻辑分析仪和频谱分析仪的高速D/A转换器的动态参数测试方法进行了理论分析和测试实践。通过编程,由逻辑分析仪给D/A转换器提供单一频率的数字正弦波和时钟信号;通过频谱分析仪,对D/A转换器输出模拟信号采样,进行快速傅里叶变换,分析得到D/A转换器的动态参数特性。实验证明,该方法能快速测试高速D/A转换器的动态参数,在实际应用中可获得良好的效果。     

内嵌于DDS的DAC线性参数测试

文章重点介绍了内嵌于DDS的DAC线性参数的一种测试方法。该测试方法的优点是开发周期短、测试成本低、可在多种测试机台上实现。解决了DDS中不能对DAC输入端直接操作的难题,同时不影响其他参数的测试。文章基于LabView软件,使用示波器或NI板卡,结合其他仪器对DAC的静态参数进行了研究并试验。其中示波器或NI板卡完成信号采集,其他仪器完成芯片配置,微机对整个流程进行控制并将测试结果按序输出,实现测试自动化。通过试验证明该方法可行,测试效率高,测试结果达标并稳定。     

一种混合信号测试系统的设计及实现

针对一款混合信号的视频编解码芯片的参数测试要求,依据电路内部的测试结构,设计了一个基于纯数字自动测试设备（ATE）的混合信号电路测试系统。该测试系统通过增加MCU、ADC、DAC、FIFO、运放、可控开关等外围电路实现对芯片参数的测试。详细阐述了测试系统的总体方案、硬件设计和软件设计。通过软件和硬件的协同工作,该测试系统能够对含有AD、DA模块的混合信号电路相关参数进行测试,实现电路整体性能的评估。该测试系统原理清晰,结构简单,扩展灵活、方便。     

四路输出D/A转换器DAC8420及其应用

DAC8420是AD公司生产的四路输出12位DAC。该DAC具有高速串行接口，而且功耗很低，能广泛应用于伺服系统控制、过程自动化控制及ATE中。其主要特点如下：     

相位体制数模转换器动态参数的表征与测试

详细分析并讨论了相位体制数模转换器(DAC)动态参数的表征方法,提出用无杂散动态范围(SFDR)、近区谐波失真(TH D 6)、有效工作带宽(EW B)、输出信号功率及正交输出信号幅度一致性来全面描述相位DAC的频域性能。采用上述方法对利用南京电子器件研究所标准76 mm G aA sM ESFET全离子注入工艺流片得到的3b it相位DAC进行了频域测试。结果显示其EW B大于1.5 GH z,转换速率大于12 G bps,全频带内输出信号的正交精度低于4%,幅度一致性低于26%(大多数测试点低于10%)。在500 MH z输入信号下,其SFDR、TH D 6分别为33.8 dB c-、33.7 dB c。该相位DAC的动态参数良好,尤其正交性能优异。     

电流输出控制设备在ATE上的TPS开发设计

简要阐述了ATE测试平台的应用背景和在电子设备测试维修中的必要性,对ATE测试平台的功能、组成和工作原理做了概括描述。介绍了测试程序集（TPS）的组成及在ATE测试平台上的开发设计思路。并以电流输出控制设备为例进行TPS开发设计,在分析了电流输出控制设备测试需求的基础上,具体设计了电流输出控制设备在TPS开发中的测试接...     

用ATE进行ISP编程

目前Lattice提供一种使用自动测试设备(ATE)对Lattice ISP器件进行编程的简便方法。Lattice ispTEST应用软件能以HP-PCF、Teradyne Table Format或Lattice Generic Format格式产生测试向量。并可望很快能支持GenRad系列测试设备。利用这一应用软件,可以方便地不用PC机来进行器件编程而靠生成测试向量(通过ATE)在生产测试过程中编程。 如果你的ATE系统支持这些     

Interfacial reaction and shear strength of SnAgCu-xNi/Ni solder joints during aging at 150 °C

The interfacial microstructure and shear strength of Sn3.8Ag0.7Cu-xNi (SAC-xNi, x = 0.5, 1, and 2) composite solders on Ni/Au finished Cu pads were investigated in detail after aging at 150 °C for up to 1000 h. The interfacial characteristics of composite solder joints were affected significantly by the weight percentages of added Ni micro-particles and aging time. After aging for 200 h, the solder joints of SAC, SAC-0.5Ni and -1Ni presented duplex intermetallic compound (IMC) layers regardless of the initial interfacial structure on as-reflowed joints, whose upper and lower IMC layers were comprised of (CuNi)₆Sn₅ and (NiCu)₃Sn₄, respectively. Only a single (NiCu)₃Sn₄ IMC layer was ever observed at the SAC-2Ni/Ni interface on whole aging process. Based on the compositional analysis, the amount of Ni within the IMC regions increased as the proportion of Ni addition increased. The IMC (NiCu)₃Sn₄ layer thickness on the interface of SAC and SAC-0.5Ni grew more slowly when compared to that of SAC-1Ni and -2Ni, while for the (CuNi)₆Sn₅ layer the reverse is true. Except the IMCs sizes are increased with increased aging time, the interfacial IMCs tended to transfer their morphologies to polyhedra. In all composite joints testing, the shear strengths were approximately equal to non-composite joints. The fracturing observed during shear testing of composite joints occurred in the bulk solder, indicating that the SAC-xNi/Ni solder joints had a desirable joint reliability.     

有机发光二极管中ADN掺杂ErQ的1.54μm电致发光

自行设计了基于8-羟基喹啉铒(ErQ)为发射层(EMLs)和二硝酰胺铵(ADN)为蓝光主体材料的近红外有机发光二级管.器件的基本结构为(p-Si/NPB/EML/Bphen/Bphen:Cs2CO3/Sm/Au),设计并比较了三套不同发射层结构(ErQ/ADN为双层结构器件,(ErQ/ADN)×3为多层结构器件,ErQ:ADN为掺杂结构器件)的器件.三组器件在一定的偏压下,均可发出1.54μm的光,对应三价铒离子4I13/2→4I15/2的跃迁.其中,ADN:ErQ(1∶1)掺杂结构的近红外电致发光强度是ADN/ErQ双层结构中的三倍.此外,不同掺杂浓度的ADN:ErQ复合膜做了以下表征:吸收谱、光致发光谱和荧光寿命谱.实验结果证实了在近红外电致发光过程中存在从ADN主体分子到ErQ发射分子的高效率的能量转移.     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

钠离子对poly(dT).poly(dA).poly(dT)三螺旋DNA分子呼吸模式的影响

利用分子结构的螺旋对称性,建立了一个包括钠离子的三链DNA分子poly(dT)*poly(dA)*poly(dT)的晶格动力学模型,计算了poly(dT)*poly(dA)*poly(dT)的氢键呼吸模式.结果发现钠离子的加入明显地淬灭了位于较低频率的几个最为强烈的Hoogensteen氢键呼吸模式,而对Watson-Crick氢键呼吸模式影响不明显,这说明钠离子能提高poly(dT)*poly(dA)*poly(dT)三螺旋结构的稳定性.该计算结果很好地解释了poly(dT)*poly(dA)*poly(dT)的热融化实验.     

聚对苯撑苯并双(口恶)唑发光及其器件制备

采用光谱技术,研究了聚对苯撑苯并双(口恶)唑(PBO)溶液的光敏发光特性,并用相对法估算出溶液发光效率在50%范围.结合光谱技术、半导体电学和电化学等研究手段,具体研究了以PBO为发光层的单层电致发光器件,研究结果显示,电致发光与薄膜的光致发光有具有相同的发光中心,峰值位于510 nm左右.同时发现,由于存制备过程中不同处理条件使得不同厚度薄膜残留的掺杂物质浓度不同,从而引起薄膜的导电性的不同.使得器件的阈值场强随PBO厚度的减小而逐渐增加.     

人小肠粘膜免疫酶的定位研究—光镜和电镜免疫组织化学染色法

本文对免疫酶组织化学的样品制备程序和染色方法做了详细的阐述。用直接法、间接法和ABC法,对人小肠免疫酶的定位,进行了光镜和电镜的观察,染色阳性反应显著,获得了满意的效果。并对染色技巧做了分析和探讨。     

BNBST无铅压电陶瓷的制备工艺研究

设计了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3（BNBST[100x-100a／100b]）无铅压电陶瓷新体系。该体系压电陶瓷具有工艺特性及压电响应好，压电常数高的特点，且有实际应用前景的新型压电陶瓷材料体系。采用传统的陶瓷工艺制备了（Bi0.55Na0.5）1-X（BaaSrb）xTiO3无铅压电陶瓷，研究了制备工艺参数对其物化结构性能的影响。生料的热重-差热（TGA-DTA）分析表明，粉料合成过程中，先是SrTiO3、BaTiO3的形成，然后是（Bi0．5Na0．5）Tio，的形成，同时三者形成固溶体；密度测试表明，陶瓷的体积密度随烧结温度的升高而增大，可较易获得理论密度94％的陶瓷；X-射线能谱分析（EDAX）研究表明，陶瓷的Bi、Na的挥发随着烧结温度的升高而加剧。研究结果表明，要制备性能优良的无铅压电陶瓷，需要精确控制制备工艺。     

Arsenic deposition as a precursor layer on silicon (211) and (311) surfaces

We investigate the properties of arsenic (As) covered Si(211) and Si(311) surfaces by analyzing data from x-ray photoelectron spectroscopy (XPS) and low-energy electron diffraction (LEED) images. We then create a model using total surface energy calculations. It was found that both Si(211) and Si(311) had 0.68±0.08 surface As coverage. Si(211) had 0.28±0.04 Te coverage and Si(311) had 0.24±0.04 Te coverage. The Si(211) surface replaces the terrace and trench Si atoms with As for a lower surface energy, while the Si edge atoms form dimers. The Si(311) surface replaces all terrace atoms and adsorbs an As dimer every other edge site. These configurations imply an improvement in the mean migration path from the bare silicon surface by allowing the impinging atoms for the next epitaxial layer, tellurium (Te), to bind at every other pair of edge atoms, and not the step terrace sites. This would ensure a nonpolar, B-face growth.     

Joint estimation of TOA and DOA in IR-UWB system using a successive propagator method

Impulse radio ultra-wideband (IR-UWB) ranging and positioning require accurate estimation of time-of-arrival (TOA) and direction-of-arrival (DOA). With receiver of two antennas, both of the TOA and DOA parameters can be estimated via two-dimensional (2D) propagator method (PM), in which the 2D spectral peak searching, however, renders much higher computational complexity. This paper proposes a successive PM algorithm for joint TOA and DOA estimation in IR-UWB system to avoid 2D spectral peak searching. The proposed algorithm firstly gets the initial TOA estimates in the two antennas from the propagation matrix, then utilises successively one-dimensional (1D) local searches to achieve the estimation of TOAs in the two antennas, and finally obtains the DOA estimates via the difference in the TOAs between the two antennas. The proposed algorithm, which only requires 1D local searches, can avoid the high computational cost in 2D-PM algorithm. Furthermore, the proposed algorithm can obtain automatically paired parameters and has better joint TOA and DOA estimation performance than conventional PM algorithm, estimation of signal parameters via rotational invariance techniques algorithm and matrix pencil algorithm. Meanwhile, it has very close parameter estimation to that of 2D-PM algorithm. We have also derived the mean square error of TOA and DOA estimation of the proposed algorithm and the Cramer-Rao bound of TOA and DOA estimation in this paper. The simulation results verify the usefulness of the proposed algorithm.     

系统级封装新型埋入式电源滤波结构的研究

在高密度小尺寸的系统级封装(SiP)中,对供电系统的完整性要求越来越高,多芯片共用一个电源网路所产生的电压抖动除了会影响到芯片的正常工作,还会通过供电网路干扰到临近电路和其他敏感电路,导致芯片误动作,以及信号完整性和其他电磁干扰问题.这种电压抖动所占频带相当宽,几百MHz到几个GHz的中频电源噪声普通方法很难去除.结合埋入式电容和电源分割方法的特点,提出一种新型高性能埋入式电源低通滤波结构直接替代电源/地平面.研究表明,在0.65～4GHz的频带内隔离深度可达-40～75 dB,电源阻抗均在0.25ohm以下,实现了宽频高隔离度的高性能滤波作用.分别用电磁场和广义传输线两种仿真器模拟,高频等效电路模型分析这种低通滤波器的工作原理以及结构对隔离性能的影响,并进行了实验验证.