Involved,Transported, or Emotional? Exploring the Determinants of Change in Knowledge,Attitudes, and Behavior in Entertainment‐Education

This study examined how 3 constructs—involvement with a specific character, involvement with the narrative (Green and Brock's construct of transportation), and viewers' emotional reaction to the narrative—produce entertainment‐education (EE) effects. A pretest/posttest survey of 167 regular viewers measured the effects of exposure to a lymphoma storyline on a television drama, Desperate Housewives. Transportation or involvement with the narrative was the best predictor of change in relevant knowledge, attitudes, and behavior. Although involvement with a specific character has been hailed an important direct predictor of EE effects, a structural equation model indicated that character involvement may be more important for its ability to heighten transportation and emotion, which, in turn, produce changes in viewers' knowledge, attitudes, and behavior.     

In?Situ Synchrotron Characterization of Melting, Dissolution, and Resolidification in Lead-Free Solders

Melting and solidification of SAC 305 lead-free solder joints in a wafer-level chip-scale package were examined in situ with synchrotron x-ray diffraction. The chips with balls attached (but not assembled to a circuit board) were reflowed one to three times using a temperature and time history similar to an industrial reflow process. Diffraction patterns from the same joint were collected every 0.5 s during the melting and solidification process. The solidification of the Sn phase in the solder joint occurred between 0.5 s and 1 s. During melting, most of the Sn melted in about 0.5 s, but in some cases took 2–5 s for the Sn peak to completely disappear. In one instance, the Sn peak persisted for 30 s. The Ag₃Sn peaks dissolved in about 1–2 s, but the Cu₆Sn₅ peaks from the interface were persistent and did not change throughout the melting and solidification process. Completely different Sn crystal orientations were always developed upon resolidification.     

N Doping and Al-N Co-doping in Sol–Gel ZnO Films: Studies of Their Structural,Electrical, Optical,and Photoconductive Properties

We have studied the structural, electrical, optical, and optoelectronic properties of N-doped and Al-N co-doped ZnO films grown by sol–gel technique. Both the undoped and doped films have a hexagonal wurtzite-type structure. The undoped film shows a very low electron concentration. The N-doped film exhibits an anomalous conduction type, while the Al-N co-doped film shows relatively stable p-type conduction. Though the transparency in the visible region is retained in the doped films, its optical qualities are degraded as indicated by photoluminescence results. The N-doped film has better response to ultraviolet light compared with the undoped and co-doped films. These results are important for the growth and development of p-type ZnO films using the very low-cost sol–gel method.     

Diffusion of Zinc in InxCa1—xAs,InP and GaAs

Zinc has been diffused into n-type InxGa1-xAs,InP and GaAs in closed am-poules,and the experimental data for InxGa1-xAs rarely reported previously have been ob-tained,Theoretically the linear relationsip between logarithmic diffusion coefficient lnD and the composition x has been demonstrated,which is in good agreement with the experimental results.The calculated diffusion junction depth for InGaAs based on the diffusion model in which D^∝ c^2 is assumed also agrees well with that of the experment,Finally the overall diffusion time in a multiayer heterostructure was approximated as t=(∑√-ti）^2.     

Relaxation,Thermal, and Interphase Effects in Polymer–Ferroelectric-Piezoelectric Ceramic Composites of Different Structures

Semiconductors - The relaxation and thermal processes and interphase phenomena in composites based on ferroelectrics and a polymer matrix are studied. It is shown that the charge stabilized at the...     

….and in Germany

Turnover at Bonn-based SolarWorld AG rose 60% to over €82m (US$73m) in 2001, thanks to production growth of solar wafers and cells.     

Oligothiophenes in organic thin film transistors – Morphology,stability and temperature operation

We have investigated a series of oligothiophenes in organic thin film transistors (TFTs), with special emphasis on their thin film morphology related to device performance and application requirements. The transistor performance was studied for devices fabricated at different substrate temperatures during semiconductor deposition (ranging from room temperature to 120 °C). A significant dependence of thin film morphology on the substrate temperature was observed, whereas the charge carrier mobility in devices occurs almost unaffected. We have tested the long-term stability of 78 transistor devices (shelf-life in ambient conditions) over a period up to 100 days. Only a small degradation in mobility by less than one order of magnitude was observed. Investigations at elevated temperatures during TFT operation (room temperature to 105 °C) show that devices with α,α′-hexylsexithiophene (Hex-6T-Hex) degrade in their charge carrier mobility by a factor of 8, but completely recover to their initial value of 0.7 cm²/Vs after a short period of storage at room temperature in ambient conditions.     

Reactive Ion Etching of GaAs, GaSb, InP and InAs in Cl2／Ar Plasma

Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance.     

Productivity Change and Growth in Posts and Telecommunications Sector

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Status and Trends in Advanced SOI Devices and Materials

提供了一种用于安德鲁反射测量样品制备新方法.该方法采用聚焦粒子束刻蚀和磁控溅射,可以获得可控的、干净的、无应力的纳米接触用于自旋极化探测.所制备的样品中,磁性和非磁性材料样品的反射谱都表现出复杂的峰和谷结构,这些结构可能源于与界面相关的零偏压反常以及与激发态相关的准离子相互作用.对另一个Co40Fe40B20合金样品采用简单的钕针尖压针方法进行了对比性测量,反射谱中没有观察到谷结构,但谱结构出现较明显的热扩展,这种热扩展可能来源于界面处的非弹性输运.所有的反射谱目前还不能由现有的理论给出令人满意的解释.利用点接触反射方法获得可靠的自旋极化信息还有赖于接触界面特征的进一步分析.而一个更切合实际的、更完善的理论成为迫切的需要.     

Diffusion of Zinc in In_xGa_(1-x)As, InP and GaAs

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High Temperature Superconductivity in the Past Twenty Years Part 1——Discovery, Material, and Theory

Twenty years after the discovery of hightemperature superconductors （HTSs）, the HTS materials now have been well developed. Meanwhile the mechanism of superconductivity is still one of the topical interests in physics. The achievements made on HTS materials and theories during the last twenty years are reviewed comprehensively in this paper.     

Mobile Edge Communications,Computing, and Caching(MEC3) Technology in the Maritime Communication Network

With the increasing maritime activities and the rapidly developing maritime economy, the fifth-generation(5G) mobile communication system is expected to be deployed at the ocean. New technologies need to be explored to meet the requirements of ultra-reliable and low latency communications(URLLC) in the maritime communication network(MCN). Mobile edge computing(MEC) can achieve high energy efficiency in MCN at the cost of suffering from high control plane latency and low reliability. In terms of this issue, the mobile edge communications, computing, and caching(MEC3) technology is proposed to sink mobile computing, network control, and storage to the edge of the network. New methods that enable resource-efficient configurations and reduce redundant data transmissions can enable the reliable implementation of computing-intension and latency-sensitive applications. The key technologies of MEC3 to enable URLLC are analyzed and optimized in MCN. The best response-based offloading algorithm(BROA) is adopted to optimize task offloading. The simulation results show that the task latency can be decreased by 26.5’ ms, and the energy consumption in terminal users can be reduced to 66.6%.     

Shockley–Haynes Characterization of Minority-Carrier Drift Velocity,Diffusion Coefficient,and Lifetime in HgCdTe Avalanche Photodiodes

A combined study of the avalanche gain characteristics of HgCdTe electron-avalanche photodiodes (e-APDs) and of the minority electron properties in the p-type absorber using Shockley–Haynes (SH) measurements is presented for various Cd compositions x _Cd. Ideal gain performance associated with a low excess noise factor F = 1.2 have been measured at T = 80 K down to cutoff wavelengths of λ _c = 2.9 μm. The observation of both a record high, exponentially increasing gain of M = 600 in short-wave e-APDs and a low excess noise factor proved that the exclusive electron multiplication is stable down to x _Cd = 0.4. Zero-flux measurements at 80 K confirmed that the dark current tends to decrease at constant gain as x _Cd increases. Measurements using a readout integrated circuit allowed us to establish a new record in sensitivity for APDs: I _{eq_in} = 2 aA, corresponding to 12 e/s at gain of M = 24 in an e-APD with λ _c = 2.9 μm. SH measurements enabled direct estimation of the electron diffusion coefficient, drift velocity, and lifetime in the p-type absorber of the e-APDs as a function of electric field at temperatures between 80 K and 200 K. Measurements at 80 K yielded lifetimes consistent with the values expected for the nominal doping of the samples. The low-field electron drift mobility, estimated from the drift velocity, was found to be a factor of 0.4 to 0.5 lower than the mobility in n-type material with the same composition. In mid-wave (MW) infrared samples with λ _c = 5.3 μm, the mobility was observed to be μ _ep = 15 kcm²/Vs to 20 kcm²/Vs, being less than μ _en ≈ 40 kcm²/Vs to 50 kcm²/Vs. The reduction in mobility can, in part, be attributed to scattering by ionized acceptors and heavy holes. The diffusion mobility, estimated from the diffusion coefficient, was systematically higher than the drift mobility, indicating diffusion of hot electrons with a temperature higher than that of the lattice. The saturation velocity, v _{sat_ep} = 2 × 10⁶ cm/s to 6 × 10⁶ cm/s, did not correlate with the Cd composition in the samples. The measured saturation velocities made it possible to estimate the timing jitter in p-type absorbers with a built-in electric field. Jitter below 100 ps was estimated for SW and MW APDs with absorbing layer thicknesses up to 4 μm.     

Resource and Admission Control in NGN

After the separation of service control from transport function in the Next Generation Network (NGN), a concept of the Resource and Admission Control (RAC) was introduced to ensure the Quality of Service (QoS). It hides the details of transport network to the service layer to support the separation of service control from transport function. It detects the resource status of transport network to secure a correct and reasonable usage of transport network resources. This accordingly ensures there are sufficient resources available to guarentee the appropriate level of QoS and avoid bandwidth and service stealing. The functional architecture, the entity involved and reference point, the access type and terminal, the resource control mode, the selection mechanism between functional entities, the interconnection between different domains, and the interaction between other transport control functions are the core study content of RAC. The RACS of the Telecoms & Internet Converged Services & Protocols for Advanced Networks (TISPAN) and the Resource and Admission Control Function (RACF) of the International Telecommunication Union Telecommunication Standardization Sector (ITU-T) differ in research focus. Consequently, the unification of Architecture, defined by different organizations, becomes the central issue of future research for each organization.     

Highlights and recent progress in micro-optics

Micro opticsanddiffractiveopticshavealongtraditioninSwitzerland ,inparticularattheInstituteofMicrotechnology ,UniversityofNeuch偄ｔｅｌ (IMT -UniNE)andatCSEM’sPhotonicsDivisioninZurich(formerlyPSI /RCALaboratories,Zurich) .DrivenbythepioneeringworkoftheseinstitutesandstronglysupportedbytheSwissPriorityProgramOPTIQUEduring 1 993～ 1 999,micro opticshaspenetratedintoSwissindustryandhasresultedinanumberofstart upcompanies.Today ,micro opticalelementsandde signservicesareavailablefr…     

Fractional order Buck–Boost converter in CCM: modelling,analysis and simulations

In this paper, the modelling, analysis and the power electronics simulator (PSIM) simulations of the fractional order Buck–Boost converter operating in continuous conduction mode (CCM) operation are investigated. Based on the three-terminal switch device method, the average circuit model of the fractional order Buck–Boost converter is established, and the corresponding DC equivalent circuit model and AC small signal equivalent circuit model are presented. And then, the equilibrium point and the transfer functions are derived. It is found that the equilibrium point is not influenced by the inductor’s or the capacitor’s order, but both these orders are included in the derived transfer functions. Finally, the comparisons between the theoretical analysis and the PSIM simulations are given for confirmation.     

Descriptions,Aims and Scopes

Established in 1984, the Journal of Electronics (China) is the earliest English journal in Electronics in China. Consecutively published since then, the Journal has been vitnessing and publishing the development of the Electronics in China and beyond.Journal of Electronics (China) is designated to provide a forum for the top quality of the research achievements of a broad blend of disciplines in Electronics and Information Sciences in order to promote rapid communications and exchanges am…     

Descriptions, Aims and Scopes

Established in 1984, the Journal of Electronics (China) is the earliest English journal in Electronics in China. Consecutively published since then, the Journal has been vitnessing and publishing the development of the Electronics in China and beyond.