Experimental Evaluation of the Acceptor-States Compensation in Positive-Temperature-Coefficient-Type Barium Titanate

Experimental evidence shows that the acceptor-state levels in Sb-doped positive-temperature-coefficient-type BaTiO₃ are compensated up to a critical acceptor-state density. Using the slope of the natural logarithm of the resistivity with respect to 1/ T , instead of maximum resistivity as a measure for the acceptor-state density, it is possible to estimate this critical value. The value obtained (4.2 × 10¹⁷ m⁻²) is believed to be the first reported estimate based on experimental data. It is in good agreement with the estimate of 6 × 10¹⁷ m⁻² (first reported by Jonker) obtained from the spontaneous polarization of BaTiO₃. This shows that the ferroelectric behavior of BaTiO₃ is indeed a feasible explanation for the low resistivity below the Curie point, as proposed by Jonker.     

Phase Transition and Physical Characteristics of Nanograined BaTiO3 Ceramics Synthesized from Surface-Coated Nanopowders

Nanograined BaTiO₃ ceramics prepared from 40-nm-size BaTiO₃ nanopowders exhibited the cubic as well as the tetragonal phase, while nanograined BaTiO₃ ceramics prepared from BaTiO₃ nanopowders coated with Mn had only the tetragonal phase. The dielectric constant of the latter was 10 times larger than that of the former; the latter exhibited PTCR behavior with a resistivity jump ratio of about 5.0 × 10⁴. These physical properties of the BaTiO₃ ceramics appeared to be significantly affected by the strain near grain boundaries; such strain resulted in a phase transition from the cubic to the tetragonal phase in the nanograined BaTiO₃ ceramics, even though the grain size was about 40 nm.     

Grain Growth in Fe3O4

Sintering and microstructural evolution were studied in Fe₃O₄ as a model system for spinel ferrites. Fe₃O₄ powder, purified by the salt-crystallization method, was sintered to ∼99.5% density in a CO-CO₂ atmosphere. The p _O2 Of the sintering atmosphere drastically affects the microstructure (grain size) of sintered Fe₃O₄ without significantly affecting density. The measured grain-boundary mobilities, M , of Fe₃O₄ fit the equation M=M ₀( T ) p _O2^−1/2 with M ₀( T ) = 2.5×10⁵ exp[-(609kJ·mol-¹/ RT ](m/s)(N/m²)^−l. The grain-boundary migration process appeared to be pore-drag controlled, with lattice diffusion of oxygen as the most likely rate-limiting step.     

Defect Chemistry and Electrical Properties of Thallium Oxide Single Crystals

Ehdectrical resistivity and Hall voltage were measured between 4.2 and 300 K on T1₂O₃ crystals annealehd at 550°C for 24 h under oxygen pressures of 2×10⁴ to 10⁷ Pa. The carrier concentration varied from 7.97×10²⁰ to 5.08×10²⁰ cm⁻³, the low-temperature Hall mobility from 131 to 189 cm²/V.s, and the Fermi level from 7.1×10⁴ to 5.05×10⁴ J/mol above the bottom of the conduction band as P ₀₂ was increased from 2×10⁴ to 10⁷ Pa. The dependence of Fermi level on carrier concentration and P _0l was consistent with a parabolic density-of-states function describing the conduction band. Over the entire region of oxygen pressure investigated, Fermi-Dirac statistics were required to describe the dependence of carrier concentration on P ₀₂.     

Preparation and ac Electrical Response Analysis for (Ba,Pb)TiO3 PTCR Ceramics

For those PTCR materials with higher Pb content, the thermodynamic derivation of increasing values for "inversion temperature" and cation vacancy diffusion rate accounts for the increases in the calculated acceptor-state densities N_s (cm⁻²). The influence of frequency-dependent properties for the dielectric constant on the calculation of acceptor-state densities is also presented. Applying the concept of suitable value for N_s to obtain a strong PTC effect, (Ba,Pb)TiO₃ PTCR ceramics with Curie point T_c over 340°C up to 420°C have been successfully prepared by adopting higher cooling rates.     

Concurrent Measurement of Volume, Grain-Boundary, and Surface Diffusion Coefficients in the System NiO-Al2O3

Surface, grain-boundary, and volume inter diffusion coefficients for the NiO-Al₂O₃ system were measured concurrently by using a diffusion couple consisting of an A1₂O₃ bicrystal and an NiO single crystal. The A1₂O₃ bicrystals having various tilt angles were fabricated by firing 2 single crystals to be joined in an H₂ atmosphere at 1800°C for 30 h. Diffusion profiles over the surface, along the grain boundary, and in the bulk of the bicrystal were determined with an electron probe microanalyzer. Mathematical analysis of the diffusion profiles gives D _s = 7.41×10^-2 exp (-35,200/ RT ), D _gb = 2.14×10^-1 exp (-63,100/ RT ) (tilt angle =30°), and D _v = 1.26×10⁴ exp (-104,000/ RT ). The grain-boundary diffusion coefficient increases with the mismatch at the boundary.     

Formation of Hexagonal Metastable Phases from an Undercooled LuFeO3 Melt in an Atmosphere with Low Oxygen Partial Pressure

Controlling the oxygen partial pressure ( P _O2) in the ambient atmosphere is an important parameter for material processing because the transition metal ion changes its valence depending on P _O2. In the present study, containerless solidification of the LuFeO₃ melt, where the undercooling level can be treated as another experimental parameter, was carried out in order to explore the unidentified metastable phases under the controlled P _O2 using an aerodynamic levitator. Decreasing P _O2 down to 1 × 10³ Pa, the unidentified phase was solidified from the undercooled melt. The X-ray diffractometry results after annealing at 1 × 10³ Pa showed the peak profile of the stable perovskite LuFeO₃ phase, suggesting that this unidentified phase was thermodynamically metastable. Thermogravimetric analysis showed that the mass of the sample solidified at P _O2= 1 × 10³ Pa significantly increased, suggesting that the formation of the metastable phases might be related to the presence of Fe²⁺ ions.     

Microstructure and Photoluminescence Properties of Mg-Doped BaTiO3:Pr3+ Phosphor

The photoluminescence of Mg-doped BaTiO₃:Pr³⁺ (Pr³⁺: 0.1 mol%) ceramics was investigated by changing the doping concentration of Mg and the sintering temperature. The results indicated that the intensity of red emission due to the ¹ D ₂→³ H ₄ transition of Pr³⁺ exhibited significant dependence on both the Mg doping content and the sintering temperature; the strongest red emission intensity was observed for 2.0 mol% Mg-doped ceramics sintered at 1050°C. An interpretation of the results obtained was made in terms of the changes in the crystal structure and microstructure of the ceramics.     

Transition from Ionic to Electronic Conduction in Pure ThO2 Under Reducing Conditions

Open-circuit emf and ac conductivity studies were conducted on two batches of dense polycrystalline ThO₂. The open-circuit emf data were used to delineate the low- p o₂ ionic domain boundary for "pure" ThO₂, which is presented as a log P_θ line on a log Po₂-1/ T diagram. In addition the ionic conductivity, σ_ion, and the high-Po₂ log P_θ boundary were also determined, mainly from ac conductivity measurements, which also confirmed the Po₂^I/4 dependence of σ_p, the p-type electronic conductivity, shown by other investigators. The main results are, for the first batch, log Pθ= 12.7−220.2 × 10³/4.575T, log σ_ion= 1.9−44.3×10³/4.575T, and log P_θ=−1.0−31.4 × 10³/4.575T; for the second batch, log Pθ=11.2−219.7 × 10³/4.575T, log σ_ion= 1.7−41.6 × 10³/4.575T, and log Pθ=0.6−40.4 × 10³/4.575T. The oxygen permeability of ThO₂ tubes and the oxidation rate constant of Th were predicted from the conductivity and emf data and compared with direct measurements previously reported. The calculated and previously measured permeabilities agreed very well; however, the correlation between the predicted and previously measured oxidation kinetics was somewhat less satisfactory.     

Lattice Modification in Ion-Implanted Ceramics

The effect of ion implantation on alumina (Al₂O₃) and silicon carbide (SiC) was investigated by Rutherford backscattering (RBS), indentation hardness, fracture toughness, transmission electron microscopy (TEM), and linear scratching with a diamond stylus. The implanted (10^l6 to 10¹⁷ Cr.cm⁻² at 280 to300 keV, 1 to 4 |MX 10^l6Ti.cm ⁻²at 150 keV,2 |MX 10¹⁶Zr.cm⁻² at 150 keV) AI₂O₃ lattice is significantly damaged but remains crystalline; the lattice hardness increases, and the scratched surface is less sensitive to fracture. The implanted (10¹³ to 10^l6 N.cm⁻² at 62 keV, 10¹⁴ to 10^l6 Cr.cm ⁻² at 280 keV) Sic lattice becomes amorphous to a depth of 250 nm, becomes less hard, and deforms without fracture when scratched. The variation in Rutherford backscattered spectra and in surface hardness with annealing are reported and interpreted in terms of lattice defects for the Al₂O₃ specimens.     

High-Energy Density Capacitors Utilizing 0.7 BaTiO3–0.3 BiScO3 Ceramics

A high, temperature-stable dielectric constant (∼1000 from 0° to 300°C) coupled with a high electrical resistivity (∼10¹²Ω·cm at 250°C) make 0.7 BaTiO₃–0.3 BiScO₃ ceramics an attractive candidate for high-energy density capacitors operating at elevated temperatures. Single dielectric layer capacitors were prepared to confirm the feasibility of BaTiO₃–BiScO₃ for this application. It was found that an energy density of about 6.1 J/cm³ at a field of 73 kV/mm could be achieved at room temperature, which is superior to typical commercial X7R capacitors. Moreover, the high-energy density values were retained to 300°C. This suggests that BaTiO₃–BiScO₃ ceramics have some advantages compared with conventional capacitor materials for high-temperature energy storage, and with further improvements in microstructure and composition, could provide realistic solutions for power electronic capacitors.     

Enhancement of Giant Dielectric Response in CaCu3Ti4O12 Ceramics by Zn Substitution

Zn-substituted CaCu₃Ti₄O₁₂ ceramics were synthesized by solid-state sintering. Their microstructures and dielectric properties were investigated. Ca(Cu_{1− x} Zn _x )₃Ti₄O₁₂ single-phase structures were obtained up to x =0.1, and the Cu⁺/Cu²⁺ and Ti³⁺/Ti⁴⁺ mixed-valent structure was enhanced with increasing Zn substitution. The giant dielectric response was significantly enhanced by Zn substitution. The dielectric constant increased with increasing x , and a giant dielectric constant plateau as high as ∼9 × 10⁴ was achieved for x =0.1 at 10 kHz, while that for x =0 was ∼3 × 10⁴. The enhanced giant dielectric response was profoundly concerned with the modified mixed-valent structure.     

Electron Carrier Generation in a Refractory Oxide 12CaO·7Al2O3 by Heating in Reducing Atmosphere: Conversion from an Insulator to a Persistent Conductor

Electron carriers were generated in refractory oxide 12CaO·7Al₂O₃ (C12A7) through a thermal treatment in a reducing CO/CO₂ atmosphere, and the reduction process was thermodynamically analyzed. Electrical-conductive C12A7, which had an electron concentration of ∼8 × 10¹⁹ cm⁻³ and an electrical conductivity of ∼4 S/cm at 300 K, was obtained by extracting free O²⁻ ions in sub-nanometer-sized cages in the C12A7 lattice and leaving electrons behind. The enthalpy for this substitutive reaction is +425 kJ/mol, suggesting that stoichiometric C12A7 is more stable in air than the C12A7 electride.     

Preparation of Dense BaTiO3 Ceramics with Submicrometer Grains by Spark Plasma Sintering

Dense BaTiO₃ ceramics consisting of submicrometer grains were prepared using the spark plasma sintering (SPS) method. Hydrothermally prepared BaTiO₃ (0.1 and 0.5 µm) was used as starting powders. The powders were densified to more than similar/congruent95% of the theoretical X-ray density by the SPS process. The average grain size of the SPS pellets was less than similar/congruent1 µm, even by sintering at 1000-1200°C, because of the short sintering period (5 min). Cubic-phase BaTiO₃ coexisted with tetragonal BaTiO₃ at room temperature in the SPS pellets, even when well-defined tetragonal-phase BaTiO₃ powder was sintered at 1100° and 1200°C and annealed at 1000°C, signifying that the SPS process is effective for stabilizing metastable cubic phase. The measured permittivity was similar/congruent7000 at 1 kHz at room temperature for samples sintered at 1100°C and showed almost no dependence on frequency within similar/congruent10⁰-10⁶ Hz; the permittivity at 1 MHz was 95% of that at 1 kHz.     

Electrical Conduction in Single-Crystal Thallic Oxide: I, Crystals "As-Grown" from the Vapor in Air

Thallic oxide, "T1₂O₃," has been shown to be a degenerate n -type semiconductor with resistivity varying from 60 to 150 μΩ-cm over the range 4° to 900°K. The carrier concentration was 7 × 10²⁰ cm⁻³ and is temperature independent. Room-temperature Hall mobility was 105 cm² V⁻¹ s⁻¹, increasing to 130 cm² V⁻¹ s⁻¹ below 70°K. Donor states were shown to be native defects, probably oxygen vacancies.     

Controlled Oxygen Partial Pressure Sintering of (Pb,La)(Zr,Ti)O3 Ceramics

Transparent PLZT(7/60/40) ceramics with large piezoelectric coefficients were obtained using a two-step sintering process with controlled oxygen partial pressure. Specifically, low-oxygen-pressure and low-temperature sintering were used in the first step, followed by a high-oxygen-pressure, high-temperature sintering cycle. High-density ceramics with small grain sizes of about 3 µm were prepared. As a result, k _p= 0.71, k ₃₃= 0.78, d ₃₃= 850 × 10^-12 C/N, and a transparency of 15% (λ= 610 nm, thickness of 1 mm) have been achieved; 20% improvement of d ₃₃ was gained compared to conventional processed PLZT ceramics ( d ₃₃= 710 × 10^-12 C/N).     

Grain Boundaries of Semiconducting SrTiO3 and BaTiO3 Ceramics Synthesized from Surface-Coated Powders

The chemical and electrical features of the grain boundaries in polycrystalline SrTi_0.99Nb_0.01O₃ (ST) and BaTiO₃ (BT) ceramics, which were synthesized by hot-press sintering Na- and Mn-coated semiconducting ST and BT powders, respectively, were investigated. Because of the excess negative electric charges formed near grain boundaries, electrostatic potential barriers were formed near the grain boundaries. The electrical features of the grain boundaries in ceramics are very sensitive to the amount of the coating material. When the amount of the coating material was increased from 0 to 5 wt%, the threshold voltage of the ST ceramics and the resistivity jump ratio of the BT ceramics increased from 0.7 to 81.0 V/cm and from 1.0 to 2.0 × 10³, respectively. The electrical features of the grain boundaries are related to their chemical characteristics.     

Annealing of Irradiation-Induced Thermal Conductivity Changes in ThO2-1.3 wt% UO2

The thermal conductivities of sintered pellets of ThO₂-1.3 wt% U0₂ were measured at 60°C before and after irradiation. The irradiation temperature was below 156°C, and the exposures varied from 3.1 × 10¹⁴ to 4.7 × lo^L7 fissions/cm³. Each fission fragment damaged a region of 2.2 × 10^-16 cm³ with the reduction in conductivity saturating by about 10¹⁷ fissions/cm³. Samples having exposures from 10¹⁵ to 10¹⁶ fissions/cm³ were annealed isothermally at 651 °C or isochronally from 300° to 1200° C to study the annealing of damage. Most of the annealing occurred between 500° and 900°C. The width of this interval plus the slow isothermal annealing suggest that the damage is annealed by a number of single order processes with a spectrum of activation energies from 1.8 to 3.9 eV or, less probably, by a high order process with an activation energy of 3.55 ± 0.4 eV.     

Reversible Weight Change of Acceptor-Doped BaTiO3

The oxygen vacancy concentration of BaTiO₃ doped with acceptors (Cr to Ni) is determined gravimetrically as a function of the O₂ partial pressure during and after annealing at 700° to 1300°C. The oxygen vacancy concentration of these materials is larger than that of undoped and donor-doped BaTiO₃. The oxygen vacancies are doubly ionized and they compensate the acceptors of lower valence. Both the vacancy concentration and the valence of the acceptor dopants depend on the annealing conditions. The electronic energy levels of the acceptors within the BaTiO₃ band gap are derived from the gravimetric measurements. The electrical properties of the acceptor-doped ceramics are favorable for base-metal-electrode multilayer capacitors, which require sintering in reducing atmospheres.     

Hot Isostatic Pressing of Reactive SnO2 Powder

Tin(IV) oxide (SnO₂) crystallizes at room temperature by adding hydrazine monohydrate ((NH₂)₂· H₂O) to a hydrochloric acid solution of tin, followed by washing and drying. Well-densified SnO₂ ceramics (99.8% of theoretical) with an average grain size of 0.9 μm have been fabricated by hot isostatic pressing for 2 h at 900°C and 196 MPa. Their Vickers hardness and bending strength are 14.4 GPa and 200 MPa, respectively. They exhibit an electrical conductivity of 2 × 10⁻³−9 × 10⁻³ S·cm⁻¹ at room temperature.