人民币冠字号码高速识别实时模板生成算法

在回顾了目前人民币冠字号码识别研究文献的基础上,提出了一种在高速走钞环境下用于识别冠字号码的实时模板生成算法.首先在装有CIS的验钞机上采集到足够完备的人民币图像,然后抠出冠字号码区域,对其进行倾斜校正、二值化处理、形态学处理、字符分割及高度归一化后,对每种字符位图生成对应的模板集合,再根据差异最大化的原理从模板集合中挑出5个形成最终的模板精简集合.最后,给出了应用此模板进行实时识别的效果数据及分析.     

基于LabVIEW的人民币冠字号识别系统研究

系统的工作方式主要是对人民币采集图像,然后进行包括图像灰值化、滤波、倾斜校正及对冠字号目标区域提取的图像预处理,随后利用LabVIEW中Vision Assistant工具里的OCR功能对冠字号中出现的字符进行训练并建立模板数据库,与提取出的冠字号区域进行匹配从而识别出字符并转换成文本。系统用户操作界面简洁,具有较高的识别准确率及速度。     

纸币号码识别技术研究

研究了纸币号码识别技术.针对水平冠字号和垂直冠字号的特点,分别对号码数字图像进行了预处理、去噪、分割等处理,然后利用区域模板矩阵作为特征参数,进行模板匹配实现号码识别,并对一些易混淆的字符进行特殊区域信息比较.在实践中水平冠字号的识别率达98%,垂直冠字号的识别率达93%.     

一种基于特征加权模板匹配方法在纸币字符识别中的应用

纸币字符是纸币的重要特征之一,一组字符能够唯一标识纸币的身份.能够快速地识别纸币中的字符直接影响到纸币字符识别的精度和速度.本文运用特征加权模板匹配算法,设计了一个纸币字符识别算法.该算法从当前应用最广泛的模板匹配法入手,对标准模板匹配算法加以改进,从而提高了纸币字符实别的效率和精度.该算法能够充分区分开字符笔画和非笔画部分对字符识别的影响大小,从而有效地提升了识别率和鲁棒性.从实验结果来看,该算法性能较优.     

消噪和数学形态学结合的字符图像预处理算法

噪声污染字符图像的预处理是字符识别技术中一项关键技术,字符识别的准确度直接取决于字符图的质量。基于消噪和数学形态学的基本原理,提出了一种预处理算法。仿真实验验证了所提出新算法的有效性和可行性。这种算法不仅能消除图像中的噪声,而且还有效地修复了笔划断裂的字符。新算法解决了识别笔划缺损字符的识别难点,从而间接地提高了字符识别技术的准确度。     

基于OpenCV的光缆表面喷码字符识别算法

人工识别光缆喷码字符弊端众多,亟需光缆自动化识别技术.针对光缆喷码点阵字符特点,提出一种在线光缆喷码字符识别系统,对模板匹配、人工神经网络和支持向量机等3种字符识别算法进行仿真研究和参数优化,并比较了这3种算法的优劣;分析了人工神经网络和支持向量机相关参数对识别准确率和训练时间的影响.仿真结果表明:相同测试集下,人工神...     

字符识别中的畸变字符校正算法研究

文章提出了一种基于模板匹配的畸变字符识别算法。该算法可以自动校正由于柱面透视投影所引起的畸变字符图像,显著提高柱面字符识别的正确率。然后对校正后的图像进行字符定位,最终通过模板匹配算法对字符做出判决。试验结果表明,畸变字符校正算法有效地提高了算法对于圆柱面上字符的识别能力,在测试中取得了良好的效果。     

基于BP神经网络的文本验证码破解

以某游戏网站的验证码为例,介绍了基于文本图像验证码的识别和破解过程。破解过程分为字符提取、字符修正和字符识别。在字符提取阶段需要对图片进行预处理降低提取难度,提取主要采用了近似颜色统计法;在字符修正阶段对比了传统的旋转算法和改进旋转算法,然后归一化字符;在字符识别阶段采用了BP神经网络方法,对验证码的识别正确率达70％,每个验证码的平均破解时间为1．625s。     

基于Android平台的视频字符实时识别研究

针对移动终端处理能力低、内存小等影响系统效率的问题,提出了三阶段视频字符实时识别方法：视频采集及图像预处理、字符区域定位和字符识别。对于字符区域定位,提出了基于感兴趣区域（ROI,Region of Interesting）运动检测的相似帧过滤算法,并通过数学形态学与连通区域相结合的方法进行字符定位;对于字符识别,提出了基于误差阈值筛选的多模板字符识别算法,保证较高识别率。算法均采用NDK开发框架实现。实验结果表明,该方法在每个阶段都提高了处理效率,达到了对视频字符实时识别的效果。     

基于隐马尔可夫模型的车牌自动识别技术

文中提出了一种车牌字符识别的新方法,用二维隐马尔可夫模型方法识别车牌中的汉字,用伪二维隐马尔可夫模型（P2D－HMM）方法识别车牌中的英文字符及阿拉伯数字。该算法适用于不同的字符大小、字符倾斜、污损等情况,抗噪声能力强。字符识别正确率达94％以上,满足实用技术的要求。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.