A monolithic three-axis micro-g micromachined silicon capacitive accelerometer

A monolithic three-axis micro-g resolution silicon capacitive accelerometer system utilizing a combined surface and bulk micromachining technology is demonstrated. The accelerometer system consists of three individual single-axis accelerometers fabricated in a single substrate using a common fabrication process. All three devices have 475-/spl mu/m-thick silicon proof-mass, large area polysilicon sense/drive electrodes, and small sensing gap (<1.5 /spl mu/m) formed by a2004 sacrificial oxide layer. The fabricated accelerometer is 7/spl times/9 mm/sup 2/ in size, has 100 Hz bandwidth, >/spl sim/5 pF/g measured sensitivity and calculated sub-/spl mu/g//spl radic/Hz mechanical noise floor for all three axes. The total measured noise floor of the hybrid accelerometer assembled with a CMOS interface circuit is 1.60 /spl mu/g//spl radic/Hz (>1.5 kHz) and 1.08 /spl mu/g//spl radic/Hz (>600 Hz) for in-plane and out-of-plane devices, respectively.     

Self-balanced navigation-grade capacitive microaccelerometers using branched finger electrodes and their performance for varying sense voltage and pressure

Presents a navigation-grade capacitive microaccelerometer, whose low-noise high-resolution detection capability is achieved by a new electrode design based on a high-amplitude anti-phase sense voltage. We reduce the mechanical noise of the microaccelerometer to the level of 5.5 /spl mu/g//spl radic/Hz by increasing the proof-mass based on deep RIE process of an SOI wafer. We reduce the electrical noise as low as 0.6 /spl mu/g//spl radic/Hz by using an anti-phase high-amplitude square-wave sense voltage of 19 V. The nonlinearity problem caused by the high-amplitude sense voltage is solved by a new electrode design of branched finger type. Combined use of the branched finger electrode and high-amplitude sense voltage generates self force-balancing effects, resulting in an 140% increase of the bandwidth from 726Hz to 1734 Hz. For a fixed sense voltage of 10 V, the total noise is measured as 2.6 /spl mu/g//spl radic/Hz at the air pressure of 3.9torr, which is the 51% of the total noise of 5.1 /spl mu/g//spl radic/Hz at the atmospheric pressure.     

Polymer-based cantilevers with integrated electrodes

An innovative release method of polymer cantilevers with embedded integrated metal electrodes is presented. The fabrication is based on the lithographic patterning of the electrode layout on a wafer surface, covered by two layers of SU-8 polymer: a 10-/spl mu/m-thick photo-structured layer for the cantilever, and a 200-/spl mu/m-thick layer for the chip body. The releasing method is based on dry etching of a 2-/spl mu/m-thick sacrificial polysilicon layer. Devices with complex electrode layout embedded in free-standing 500-/spl mu/m-long and 100-/spl mu/m-wide SU-8 cantilever were fabricated and tested. We have optimized major fabrication steps such as the optimization of the SU-8 chip geometry for reduced residual stress and for enhanced underetching, and by defining multiple metal layers [titanium (Ti), aluminum (Al), bismuth (Bi)] for improved adhesion between metallic electrodes and polymer. The process was validated for a miniature 2/spl times/2 /spl mu/m/sup 2/ Hall-sensor integrated at the apex of a polymer microcantilever for scanning magnetic field sensing. The cantilever has a spring constant of /spl cong/1 N/m and a resonance frequency of /spl cong/17 kHz. Galvanometric characterization of the Hall sensor showed an input/output resistance of 200/spl Omega/, a device sensitivity of 0.05 V/AT and a minimum detectable magnetic flux density of 9 /spl mu/T/Hz/sup 1/2/ at frequencies above 1 kHz at room temperature. Quantitative magnetic field measurements of a microcoil were performed. The generic method allows for a stable integration of electrodes into polymers MEMS and it can readily be used for other types of microsensors where conducting metal electrodes are integrated in cantilevers for advanced scanning probe sensing applications.     

A high-sensitivity silicon accelerometer with a folded-electrode structure

A high-sensitivity capacitive silicon accelerometer with a new device structure is presented in this paper. The structure uses a fixed rigid electrode suspended between a proof mass and a stiff moving electrode to provide differential capacitance measurement and force rebalancing. High sensitivity is achieved by forming a thick silicon proof mass and a narrow uniform air gap over a large area. The mechanical noise floor is reduced by incorporating damping holes in the electrodes. The accelerometer structure is all silicon and is fabricated on a single silicon wafer. The measured sensitivity for a device with 2.6 mm /spl times/ 1 mm proof mass and 1.4 /spl mu/m air gap is /spl ap/11 pF/g per electrode. The calculated mechanical noise floor for the same device is 0.18 /spl mu/g//spl radic/Hz at atmosphere.     

Polymer-based wide-bandwidth and high-sensitivity micromachined electron tunneling accelerometers using hot embossing

The first PMMA-based membrane tunneling accelerometers were fabricated by hot embossing replication with silicon molds. The silicon molds were prepared by a combinative etching technique involving anisotropic bulk etching and modified plasma dry etching. The constructed molds hold both pyramid pits and positive profile sidewalls with smooth surfaces and steep angles, which were necessary for the hot embossing demolding. After electrodes patterned on embossed PMMA structures, the accelerometers, 8 mm /spl times/8 mm /spl times/1 mm, were packaged and assembled on a measurement circuit board. The exponential relationship between tip currents and applied deflection voltages presented a tunneling barrier height of 0.17 eV. The natural frequency of sensors was about 128 Hz. The bandwidth of the feedback system was 6.3 kHz. The sensitivity of voltage over acceleration was 20.6 V/g, and the resolution was 0.2485 /spl mu/g//spl radic/Hz (g=9.8 m/s/sup 2/).     

Piston-motion micromirror based on electrowetting of liquid metals

This paper reports a new actuating method of a micromirror with piston motion by the electrowetting effect. Liquid metals drops (LMD), gallium and mercury, instead of conventional electrolyte solution, are used in the electrowetting experiments to reduce the vapor pressure and to increase the conductivity. An approximate formula of LMD height changes versus actuated voltage is deduced and the electrowetting setup is improved for actuating the mirror. The actuating performance of the LMD as a pivot is investigated. The hysteresis of contact angle is effectively minimized with argon sputtering the surface of the insulating layer, which makes the deformation of the LMD highly repeatable. The frequency response (0.01 Hz-3 kHz) and 6 vibration modes of the mercury drop are observed. The maximum acceleration of the drop during the actuation is 300 g (g=9/spl middot/8 m/s/sup 2/). We fabricated a 1000 /spl mu/m/spl times/1000 /spl mu/m/spl times/20 /spl mu/m, 50 /spl mu/g micromirror and an actuating circuit based on the electrowetting of liquid metal. With the LMD confine spot, a mercury drop of 500 /spl mu/m in diameter is placed between the mirror and the actuating electrodes. A 440-Hz sinusoidal voltage of 75 V actuates the micromirror, with a maximum of 60 /spl mu/m displacement.     

Electrostatic charge and field sensors based on micromechanical resonators

We have developed highly sensitive electrometers and electrostatic fieldmeters (EFMs) that make use of micromechanical variable capacitors. Modulation of the input capacitance, a technique used in macroscale instruments such as the vibrating-reed electrometer and the field-mill electrostatic voltmeter (ESV), moves the detection bandwidth away from the 1/f-noise-limited regime, thus improving the signal-to-noise ratio (SNR). The variable capacitors are implemented by electrostatically driven resonators with differential actuation and sensing to reduce drive-signal feedthrough. The resonators in the electrometer utilize a balanced comb structure to implement harmonic sensing. Two fabrication methods were employed - a hybrid technology utilizing fluidically self-assembled JFETs and SOI microstructures, and an integrated process from Analog Devices combining 0.8-/spl mu/m CMOS and 6-/spl mu/m-thick polysilicon microstructures. All devices operate in ambient air at room temperature. Measured data from one electrometer with an input capacitance of 0.7 pF indicates a charge resolution of 4.5 aC rms (28 electrons) in a 0.3 Hz bandwidth. The resolution of this electrometer is unequaled by any known ambient-air-operated instrument over a wide range of source capacitances. The EFM has a resolution of 630 V/m, the best reported figure for a MEMS device.     

Vertical-actuated electrostatic comb drive with in situ capacitive position correction for application in phase shifting diffraction interferometry

This research utilizes the levitation effect of electrostatic comb fingers to design vertical-to-the-substrate actuation for optical phase shifting interferometry applications. For typical polysilicon comb drives with 2 /spl mu/m gaps between the stationary and moving fingers, as well as between the microstructures and the substrate, the equilibrium position is nominally 1-2 /spl mu/m above the stationary comb fingers. This distance is ideal for most phase shifting interferometric applications. A parallel plate capacitor between the suspended mass and the substrate provides in situ position sensing to control the vertical movement, providing a total feedback-controlled system. The travel range of the designed vertical microactuator is 1.2 /spl mu/m. Since the levitation force is not linear to the input voltage, a lock-in amplifier capacitive sensing circuit combined with a digital signal processor enables a linearized travel trajectory with 1.5 nm position control accuracy. A completely packaged micro phase shifter is described in this paper. One application for this microactuator is to provide linear phase shifting in the phase shifting diffraction interferometer (PSDI) developed at LLNL which can perform optical metrology down to 2 /spl Aring/ accuracy.     

Uncooled multimirror broad-band infrared microbolometers

A new generation of microbolometers were designed, fabricated and tested for the NASA CERES (Clouds and the Earth's Radiant Energy System) instrument to measure the radiation flux at the Earth's surface and the radiant energy now within the atmosphere. These detectors are designed to measure the earth radiances in three spectral channels consisting of a short wave channel of 0.3 to 5 /spl mu/m, a wide-band channel of 0.3 to 100 /spl mu/m and a window channel from 8 to 12 /spl mu/m each housing a 1.5 mm x 1.5 mm microbolometers or alternatively 400 /spl mu/m x 400 mm microbolometers in a 1 /spl times/ 4 array of detectors in each of the three wavelength bands, thus yielding a total of 12 channels. The microbolometers were fabricated by radio frequency (RF) magnetron sputtering at ambient temperature, using polyimide sacrificial layers and standard micromachining techniques. A semiconducting YBaCuO thermometer was employed. A double micromirror structure with multiple resonance cavities was designed to achieve a relatively uniform absorption from 0.3 to 100 /spl mu/m wavelength. Surface micromachining techniques in conjunction with a polyimide sacrificial layer were utilized to create a gap underneath the detector and the Si/sub 3/N/sub 4/ bridge layer. The temperature coefficient of resistance was measured to be -2.8%/K. The voltage responsivities were over 10/sup 3/ V/W, detectivities above 10/sup 8/ cm Hz/sup 1/2//W, noise equivalent power less than 4 /spl times/ 10/sup -10/W/Hz/sup 1/2/ and thermal time constant less than 15 ms.     

VHF single crystal silicon capacitive elliptic bulk-mode disk resonators-part II: implementation and characterization

This work, the second of two parts, reports on the implementation and characterization of high-quality factor (Q) side-supported single crystal silicon (SCS) disk resonators. The resonators are fabricated on SOI substrates using a HARPSS-based fabrication process and are 3 to 18 /spl mu/m thick. They consist of a single crystal silicon resonant disk structure and trench-refilled polysilicon drive and sense electrodes. The fabricated resonators have self-aligned, ultra-narrow capacitive gaps in the order of 100 nm. Quality factors of up to 46 000 in 100 mTorr vacuum and 26000 at atmospheric pressure are exhibited by 18 /spl mu/m thick SCS disk resonators of 30 /spl mu/m in diameter, operating in their elliptical bulk-mode at /spl sim/150 MHz. Motional resistance as low as 43.3 k/spl Omega/ was measured for an 18-/spl mu/m-thick resonator with 160 nm capacitive gaps at 149.3 MHz. The measured electrostatic frequency tuning of a 3-/spl mu/m-thick device with 120 nm capacitive gaps shows a tuning slope of -2.6 ppm/V. The temperature coefficient of frequency for this resonator is also measured to be -26 ppm//spl deg/C in the temperature range from 20 to 150/spl deg/C. The measurement results coincide with the electromechanical modeling presented in Part I.     

Two-axis single-crystal silicon micromirror arrays

This work presents the design, fabrication, and testing of a two-axis 320 pixel micromirror array. The mirror platform is constructed entirely of single-crystal silicon (SCS) minimizing residual and thermal stresses. The 14-/spl mu/m-thick rectangular (750/spl times/800 /spl mu/m/sup 2/) silicon platform is coated with a 0.1-/spl mu/m-thick metallic (Au) reflector. The mirrors are actuated electrostatically with shaped parallel plate electrodes with 86 /spl mu/m gaps. Large area 320-mirror arrays with fabrication yields of 90% per array have been fabricated using a combination of bulk micromachining of SOI wafers, anodic bonding, deep reactive ion etching, and surface micromachining. Several type of micromirror devices have been fabricated with rectangular and triangular electrodes. Triangular electrode devices displayed stable operation within a (/spl plusmn/5/spl deg/, /spl plusmn/5/spl deg/) (mechanical) angular range with voltage drives as low as 60 V.     

An all-silicon single-wafer micro-g accelerometer with a combinedsurface and bulk micromachining process

This paper reports an all-silicon fully symmetrical z-axis micro-g accelerometer that is fabricated on a single-silicon wafer using a combined surface and bulk fabrication process. The microaccelerometer has high device sensitivity, low noise, and low/controllable damping that are the key factors for attaining μg and sub-μg resolution in capacitive accelerometers. The microfabrication process produces a large proof mass by using the whole wafer thickness and a large sense capacitance by utilizing a thin sacrificial layer. The sense/feedback electrodes are formed by a deposited 2-3 μm polysilicon film with embedded 25-35 μm-thick vertical stiffeners. These electrodes, while thin, are made very stiff by the thick embedded stiffeners so that force rebalancing of the proof mass becomes possible. The polysilicon electrodes are patterned to create damping holes. The microaccelerometers are batch-fabricated, packaged, and tested successfully. A device with a 2-mm×1-mm proof mass and a full bridge support has a measured sensitivity of 2 pF/g. The measured sensitivity of a 1-mm×1-mm accelerometer with a cantilever support is 19.4 pF/g. The calculated noise floor of these devices at atmosphere are 0.23 μg/√Hz and 0.16 μg/√Hz, respectively     

Vertical comb array microactuators

A vertical actuator fabricated using a trench-refilled-with-polysilicon (TRiPs) process technology and employing an array of vertical oriented comb electrodes is presented. This actuator structure provides a linear drive to deflection characteristic and a large throw capability which are key features in many sensors, actuators and micromechanisms. The actuation principle and relevant theory is developed, including FastCap simulations for theoretical verification. Design simplifications have been suggested that enable one to use parallel plate analytical expressions which match simulation results with /spl sim/5.6% error. Several actuators were designed and fabricated using the 7-mask TRiPs technology with calculated drive voltages as low as 45 V producing 10 /spl mu/m of deflection. The actuators employed a mechanical structure that was 18 /spl mu/m tall using a polysilicon layer 1.5 /spl mu/m thick and occupying a total area of 750 /spl mu/m by 750 /spl mu/m. The actuators were successfully tested electrostatically and several microns of deflection were observed.     

A new wide range Euclidean distance circuit for neural network hardware implementations

In this paper, we describe an analog very large-scale integration (VLSI) implementation of a wide range Euclidean distance computation circuit - the key element of many synapse circuits. This circuit is essentially a wide-range absolute value circuit that is designed to be as small as possible (80 /spl times/ 76 /spl mu/m) in order to achieve maximum synapse density while maintaining a wide range of operation (0.5 to 4.5 V) and low power consumption (less than 200 /spl mu/W). The circuit has been fabricated in 1.5-/spl mu/m technology through MOSIS. We present simulated and experimental results of the circuit, and compare these results. Ultimately, this circuit is intended for use as part of a high-density hardware implementation of a self-organizing map (SOM). We describe how this circuit can be used as part of the SOM and how the SOM is going to be used as part of a larger bio-inspired vision system based on the octopus visual system.     

Electrocapillary piston motion and a prototype of phase-manipulating micromirror

In this paper, we study the piston motion of a mercury droplet that is confined in a metal-plated microhole. This droplet is actuated by the electrocapillary effect and large displacements of up to 210 /spl mu/m are achieved with very low voltages (/spl sim/2 V). We use a high-speed camera (10,000 frames/s) to capture the piston motion and we find the resonance frequency is /spl sim/50 Hz. The mercury droplet geometry in equilibrium state is analyzed based on Laplace equation and volume conservation. A mathematical model is developed; it predicts that the resonant frequency of mercury droplet is 150 Hz. A prototype of piston-motion micromirror is also demonstrated in the experiment, with a frequency of 400 Hz and amplitude of /spl sim/8 /spl mu/m at 2 V.     

Fabrication and measured performance of a first-generation microthermoelectric cooler

The measured performance of a column-type microthermoelectric cooler, fabricated using vapor-deposited thermoelectric films and patterned using photolithography processes, is reported. The columns, made of p-type Sb/sub 2/Te/sub 3/ and n-type Bi/sub 2/Te/sub 3/ with an average thickness of 4.5 /spl mu/m, are connected using Cr/Au/Ti/Pt layers at the hot junctions, and Cr/Au layers at the cold junctions. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films, which were deposited with a substrate temperature of 130/spl deg/C, are -74 /spl mu/V/K and 3.6/spl times/10/sup -5/ /spl Omega/-m (n-type, power factor of 0.15 mW/K/sup 2/-m), and 97 /spl mu/V/K and 3.1/spl times/10/sup -5/ /spl Omega/-m (p-type, power factor of 0.30 mW/K/sup 2/-m). The cooling performance of devices with 60 thermoelectric pairs and a column width of 40 /spl mu/m is evaluated under a minimal cooling load (thermobuoyant surface convection and surface radiation). The average cooling achieved is about 1 K. Fabrication challenges include the reduction of the column width, implementation of higher substrate temperatures for optimum thermoelectric properties, and improvements of the top connector patterning and deposition.     

Design and characterization of an electrothermally driven monolithic long-stretch microdrive in compact arrangement

An electrothermally driven long stretch microdrive (LSMD) is presented for planar rectilinear motions in hundreds of micrometers. Design concept is based on connecting several actuation units in series to form a cascaded structure to accumulate relative displacement of each unit, and two cascaded structures are further arranged in parallel by a connection bar to double output force. The proposed area-saving design features monolithic compliant structure in compact arrangement to achieve long stroke. In experiments, the maximum reversible operating voltage is 3 V. In addition, the voltage-displacement relation shows good linearity within /spl plusmn/5% in 0.5-3.0 V. Fabricated nickel LSMD can generate displacement up to 215 /spl mu/m (W=8 /spl mu/m, /spl theta/=0.2/spl deg/, D=34 /spl mu/m) at 3 dc volts (669 mW). The maximum operation temperatures of tested LSMDs at 3 V are below 300 /spl deg/C. Output forces up to 495 /spl mu/N are measured by in situ passive micromechanical test beams. The LSMD can be operated at 100 Hz without degradation on displacement. Two geometrical design parameters, bent angle and constraint bar width, are also investigated analytically and experimentally.     

Self-aligned vertical electrostatic combdrives for micromirror actuation

In this paper, we analyze the effect of misalignment in electrostatic combdrives, and describe a fabrication technology that minimizes misalignment in vertical electrostatic combdrives by creating self-aligned, vertically staggered electrodes. Self-alignment of the interdigitated electrodes simplifies fabrication and minimizes failures due to electrostatic instability, thus enabling fabrication of narrow-gap, high-force actuators with high yield. The process is based on deep-reactive ion etching (DRIE) of buried-patterned silicon-on-insulator (SOI) wafers. Measurements on fabricated combdrives show relative misalignment of less than 0.05 /spl mu/m. This corresponds to less than 0.1% misalignment, which, according to our analysis, results in a travel range of 98% of that for perfectly aligned drives. The validity of the process is demonstrated by fabrication of scanning micromirrors measuring 300 /spl mu/m by 100 /spl mu/m. Optical angular deflections from 4/spl deg/ at low frequency to 40/spl deg/ at resonance were measured for an applied voltage of 75 Vpp. Resonant frequencies ranged from 5 kHz to 15 kHz for these devices, making them suitable for high-speed, high-resolution optical scanning and switching.     

Low-voltage, large-scan angle MEMS analog micromirror arrays with hidden vertical comb-drive actuators

This paper reports on novel polysilicon surface-micromachined one-dimensional (1-D) analog micromirror arrays fabricated using Sandia's ultraplanar multilevel MEMS technology-V (SUMMiT-V) process. Large continuous DC scan angle (23.6/spl deg/ optical) and low-operating voltage (6 V) have been achieved using vertical comb-drive actuators. The actuators and torsion springs are placed underneath the mirror (137/spl times/120 /spl mu/m/sup 2/) to achieve high fill-factor (91%). The measured resonant frequency of the mirror ranges from 3.4 to 8.1 kHz. The measured DC scanning characteristics and resonant frequencies agree well with theoretical values. The rise time is 120 /spl mu/s and the fall time is 380 /spl mu/s. The static scanning characteristics show good uniformity (相似文献   

A hybrid PZT-silicon microvalve

A low-voltage, low-power microvalve for compact battery-powered portable microfluidic platforms is designed, fabricated and experimentally characterized. The microvalve employs laser-machined piezoelectric unimorphs mechanically linked to surface micromachined nickel structures anchored on corrugated Si/sub x/N/sub y/-Parylene composite membrane tethers. The Parylene layer also serves as a compliant sealing layer on the valve seat for reducing the leakage in the off state. A mechanical linking process to connect the bulk piezoelectric unimorphs to micromachined diaphragms in a self-aligned manner has been developed. The design enables large strokes (2.45 /spl mu/m) at low-actuation voltages (10 V) consuming a comparatively low switching energy (678 nJ). The dependence of the measured flow rates on the modulated clearance over the orifice was found to be in good agreement with the theory of laminar flow in the low (1-100) Reynolds number regime. The microvalve was experimentally characterized for both gas and liquid flows. For example, at 10 V unimorph actuation, a gas flow rate of 420 /spl mu/L/min at a differential pressure of 9.66 kPa was measured. The off-state leakage rate for 0 V actuation is estimated to be 10-20 /spl mu/L/min. Typical flow rates with pulse width modulated (PWM) actuation with 50% duty cycle at 20 V/sub pp/ (1 kHz) were measured to be 770 /spl mu/L/min at 6.9 kPa for gases and 2.77 /spl mu/L/min at 4.71 kPa for liquids.