Performance Assessment of Graded Channel Gate-Stack based Double Gate MOSFET for Bio-sensing Applications

Silicon - In this paper, the performance of the Asymmetric Gate Graded Channel Gate-Stack Double Gate (AG-GCGS-DG) MOSFET-based biosensor has been investigated for dielectric-modulated (DM)...     

Exploring the Threshold Voltage Characteristics and Short Channel Behavior of Gate Engineered Front Gate Stack MOSFET with Graded Channel

Silicon - The present work focuses on formulating a detailed two dimensional analytical model of the proposed Triple Metal Stacked Front Gate Oxide Double Gate MOSFET with step graded channel...     

Numerical Study of JAM-GS-GAA FinFET: A Fin Aspect Ratio Optimization for Upgraded Analog and Intermodulation Distortion Performance

Silicon - This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded static,...     

Influence of Threshold Voltage Performance Analysis on Dual Halo Gate Stacked Triple Material Dual Gate TFET for Ultra Low Power Applications

Silicon - In this article, a two dimensional (2-D) threshold voltage modeling based gate and channel engineering are developed analytically for Dual Halo Gate Stacked Triple Material Dual Gate...     

Analog and RF Performance Evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET

Silicon - This work presents the analog and RF performance evaluation of Junctionless Accumulation Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have been compared...     

Analytical modeling and Simulation Based Investigation of Triple material surrounding gate heterojunction tunnel FET

Silicon - A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Heterojunction Tunnel Field Effect Transistor...     

Modeling and Simulation Based Investigation of Triple Material Surrounding Gate Tunnel FET for Low Power Application

Silicon - A two-dimensional analytical model is proposed in this paper for surface potential and drain current on Triple Material Surrounding Gate Junctionless Tunnel Field Effect Transistor...     

Analytical Model of Double Gate Stacked Oxide Junctionless Transistor Considering Source/Drain Depletion Effects for CMOS Low Power Applications

This paper proposes a 2-D analytical model developed for Double Gate Junctionless Transistor with a SiO2/HfO2 stacked oxide structure. The model is solved     

Resistances and ESD Reliability Study of Core-Shell Channel Junctionless DG MOSFET

Silicon - In this article, an investigation has been done to address the resistance and reliability issues with Conventional Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor (Conv. JL...     

Investigation of Ambipolar Conduction and RF Stability Performance in Novel Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate TFET

Silicon - In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET...     

Analytical Modeling of Surrounding Gate Junctionless MOSFET Using Finite Differentiation Method

Silicon - In this paper, a novel two-dimensional analytical model for threshold voltage on Dual Material Surrounding Gate Junctionless MOSFET is proposed. The analytical study is aimed at...     

Design Considerations and Capacitance Dependent Parametric Assessment of Gate Metal Engineered SiNW MOSFET for ULSI Switching Applications

Silicon - This work investigates design consideration of Gate Electrode Workfunction Engineered (GEWE) silicon nanowire MOSFET at room temperature. It is perceived from the results that the...     

Subthreshold Current Modeling of Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET for Low Power Applications

Silicon - Stacked Dielectric Triple Material Cylindrical Gate All Around (SD-TM-CGAA) Junctionless MOSFET has been explored for low power applications. This paper presents an analytical model of...     

Charge Density Based Small Signal Modeling for InSb/AlInSb Asymmetric Double Gate Silicon Substrate HEMT for High Frequency Applications

Silicon - This paper proposes the Asymmetric Double Gate Silicon Substrate HEMT (ADG-Si-HEMT) to study the carrier concentration and intrinsic small signal parameters of the InSb/AlInSb silicon...     

Analytical Modeling of Sensitivity Parameters Influenced by Practically Feasible Arrangement of Bio-Molecules in Dielectric Modulated FET Biosensor

Silicon - In this paper, analytical modeling of a Dielectric Modulated Double Gate Field Effect Transistor (DM-DGFET) for biosensing application is presented with extensive data analysis. Firstly,...     

Design and Simulation of Symmetrical Dual Gate on Drain Side with Overlapped and Underlapped Regions of TFET

Silicon - A unique Symmetrical Dual Metal Gate Extended on drain side with overlapped and underlapped three regions of Tunnel Field Effect Transistor (DG-ED-TFET) have been designed and...     

Design and Optimization of Dual Material Gate Junctionless FinFET Using Dimensional Effect,Gate Oxide and Workfunction Engineering at 7 nm Technology Node

Silicon - In this paper, we designed and analyzed the performance of Dual Material Gate Junctionless FinFET(DMG JLFinFET) using gate engineering with high-k dielectrics for nanoscale applications....     

Influence of Symmetric Underlap on Analog,RF and Power Applications for DG AlGaN/GaN MOS-HEMT

Silicon - An Underlap Double Gate (U-DG) Symmetric Heterojunction AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) with varying source and drain underlap lengths...     

Analysis of Sub-Threshold Adiabatic Logic Model Using Junctionless MOSFET for Low Power Application

Silicon - In this paper Junctionless Double Gate MOSFET based Efficient Charge Recovery Logic (JL-ECRL) circuits have been driven in sub-threshold regime for the first time in literature to...     

Study of Effective Graded Oxide Capacitance and Length Variation on Analog,RF and Power Performances of Dual Gate Underlap MOS-HEMT

Silicon - Comparative analysis of a Symmetric Heterojunction Underlap Double Gate (U-DG) GaN/AlGaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOS-HEMT) on varying the effective...