射频溅射Y-ZrO_2薄膜的研究

采用射频磁控溅射法制成含钇的二氧化锆薄膜,借助背散射分析(RBS)、透射电子显微镜(TEM)和X光衍射(XRD)方法研究了薄膜的化学剂量比、微观结构和相结构。同时研究了微观结构与机械性能(显微硬度、韧性、抗磨损性)之间的关系,以及退火对相稳定性的影响。     

射频溅射制备氧化镍电致变色薄膜的研究

采用射频反应磁控溅射工艺，以纯镍靶为靶材，在SnO2玻璃上制备电致变色NiOx薄膜。通过对薄膜X射线衍射（XRD）、X光电子能谱（XPS）、扫描隧道显微镜（STM）、循环伏安曲线及可见光透过率的测定，探讨了NiOx薄膜的电致变色性能和微观结构之间的关系，研究了热处理过程中的结构变化和表面形貌。测试表明该氧化镍薄膜具有良好的电致变色性能和阳极着色效应，以及较高的使用寿命。     

Ag-MgF_2纳米金属陶瓷薄膜的光吸收特性

测量了真空热蒸发沉积法制备的Ag MgF2 纳米金属陶瓷薄膜在近紫外到可见光区的吸收光谱、光学常数和介电函数 ,观察到在 42 7nm处有明显的表面等离子激元共振吸收峰。消光系数与介电函数的虚部谱形类似。讨论了共振吸收峰位置与金属微粒尺寸的关系     

Ge-SiO2薄膜的结构及其发光特性的研究

采用射频磁控溅射技术制备了Ge-SiO2薄膜，在N2气氛下进行了不同温度的退火处理，分析了样品在室温下的光致发光（PL）特性，为探讨其发光机制，对薄膜的结构进行了表征，XRD、XPS、FTIR谱分析说明样品的发光特性与其结构相对应，394nmPL由GeO缺陷引起，580nmPL与Ge纳米晶粒和基质SiO2界面处的发光光中心相联系。     

溶胶－凝胶法在金属表面制备TiO_2－SiO_2系薄膜的研究

本文介绍以钛酸丁酯和正硅酸乙酯为前驱物、用溶胶。凝胶法在不锈钢金属基体表面制备晶态或非晶态的ＴｉＯ＿２－ＳｉＯ＿２系薄膜，ＩＲ测定结果表明有硅。氧－钛网络形成，并对薄膜进行了ＸＲＤ和ＳＥＭ观察。研究结果表明，在不锈钢金属基体上用溶胶－凝胶法选取适当条件可以得到附着力良好以及均匀完整的多种无机物薄膜，显示了该法的应用前景。     

射频溅射法制作Y2O2S∶Eu发光薄膜

在钇铝石榴石单晶基片上用射频溅射法制取了Y2 O2 S∶Eu红色发光薄膜。利用正交试验法 ,对溅射气体 (Ar H2 S)中H2 S浓度、退火气氛中SO2 与H2 的比例、退火温度和退火时间等工艺条件进行了优化试验。给出了实验结果并对其进行了讨论。     

Ag—MgF2纳米金属陶瓷薄膜的光吸收特性

测量了真空热蒸发沉积法制备的Ag-MgF2纳米金属陶瓷薄膜在近紫外到可见光区的吸收光谱、光学常数和介电函数，观察到在427nm处有明显的表面等离子激元共振吸收峰。消光系数与介电函数的虚部谱形类似。讨论了共振吸收峰位置与金属微粒尺寸的关系。     

VO2薄膜的主要制备工艺参数研究

通过正交试验设计对制备ＶＯ２薄膜过程中的部分影响因素（膜厚，最终热处理温度和热处理保温时间）进行了分析研究。ＶＯ２薄膜由无机溶胶－凝胶法制备Ｖ２Ｏ５凝胶膜经真空热处理而成。试验结果表明，ＶＯ２薄膜的最终电学性能明显受到膜厚、热处理温度和保温时间的影响。其中以热处理温度的影响最为显著。当真空度为３Ｐａ、升温速率为２℃／ｍｉｎ时，在试验参数范围内（真空热处理温度３４０￣５００℃，保温时间４０￣２４０ｍ     

Effects of nitrogen gas ratio on composition and microstructure of BCN films prepared by RF magnetron sputtering

BCN films are prepared by a radio frequency (RF) magnetron sputtering in a mixture of Ar and N₂ gases using a combination of half-moon shaped B₄C (BC) and graphite (G) targets where the substrates are faced to each target side (BC-side and G-side) which allows us to obtain the BCN films with a different composition at the same time. The compositional and structural changes are examined under the different conditions of the ratio of N₂ to Ar gases and the sample-set-positions by field emission-scanning electron microscopy/energy dispersive X-ray spectroscopy (FE-SEM/EDX), Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), visible- and ultraviolet (UV)-Raman measurements. Nanoindentation test is also carried out to evaluate the mechanical properties. It is found that all films exhibit amorphous structure. With increasing N₂ ratio, the B concentration in the films is decreased, while the amount of C-N bonds is increased. For the G-side films, C concentration and the amount of B-C bonds are increased as compared with the BC-side films. The results suggest that the increase of N₂ ratio causes the decrease of sputtered B and the enhancement of C-N bond formation. In the case of the G-side films, BC_1.4N_0.4 films are obtained at N₂ ratio of 100%. The relation between the results of Raman spectroscopy and hardness of the films and possible scheme of the microstructure are discussed.     

射频磁控溅射硅薄膜的制备与结构研究

采用拉曼光谱、光学显微镜、透射电镜研究了不同衬底温度、腔体气压对射频磁控溅射法制备的不含氢硅薄膜相结构和形貌的影响.结果表明430℃时薄膜中出现微晶相,平均晶粒尺寸2.8nm.腔体内杂质及衬底表面的显微缺陷会诱发薄膜针孔、凹坑等缺陷的产生.低温、高压会导致薄膜中空洞缺陷的密集.     

反应RF磁控溅射法制备非晶氧化硅薄膜及其特性研究

在氧气和氩气的混合气体中,在没有额外加热的条件下用反应射（RF）溅射硅靶制备了非晶氧化硅（a-SiO2)薄膜,并测试分析了薄膜的结构和电特性与O2／Ar流量比的关系。当固定氩气流量,改变氧气流量时,薄膜沉积速率先急剧减少,再增大,然后又减少。当O2／Ar≥0．075时,得到满足化学配比的氧化硅薄膜。并且,随着O2／Ar流量比的增大,薄膜的电阻,电场击穿强度都有所增大,而在HF缓冲溶液（BHF）中的腐蚀速率下降,所有的样品中无明显的H－OH水分子的红外吸收峰。比较发现反应射频（RF）磁控溅射法制备的a-SiO2薄膜具有良好的致密性和绝缘性。     

氧化钒薄膜作为锂离子微电池阴极膜的磁控溅射技术的制备

研究了用磁控溅射系统来制备氧化钒薄膜,通过优化工艺条件制备出可用作锂离子微电池阴极膜的非晶态五氧化二钒（α-V2O5）薄膜。并使用X射线衍射（XRD）与X射线光电子谱（XPS）来表征薄膜的晶向及化学组分。结果表明通过调节氧气以及氩气的流量、基片的温度和溅射功率,可以制备出高纯度的α-V2O5薄膜。而且,半电池体系V2O5/LiPF6/Li被构造用于表征在锂电池中作为阴极膜的五氧化二钒（α-V2O5）的电学性质。在此电池系统经过10个循环放电后,薄膜放电电容趋于稳定值。     

用磁控溅射法制备的Ag-MgF2的复合薄膜的研究

采用RF磁控溅射方法制备了Ag-MgF2复合薄膜.通过XRD测量,发现当退火温度在300～500℃时,Ag以晶态形式镶嵌在非晶态介质中;当退火温度低于300℃时候,Ag以非晶态形式存在.在分层镀Ag和MgF2薄膜后,经过热处理使Ag颗粒扩散在MgF2介质中,通过AFM观察,对复合薄膜形貌进行了分析:如果先镀MgF2薄膜,再镀Ag薄膜,发现Ag颗粒主要分布在薄膜的表面,并且富集形成较大的颗粒,表现出块体Ag的吸收特性.而先镀Ag薄膜,然后再镀MgF2薄膜,经过热处理,可以形成Ag颗粒均匀镶嵌在介质中形成的复合薄膜.同时对样品的吸收特性也进行了研究.     

Characterization and photocatalytic activity of TiO2 thin films prepared by RF magnetron sputtering

TiO₂ nano-structured thin films were prepared by RF magnetron sputtering and annealed in ambient air for 1 h at 400, 600, 800, 1000, and 1200 °C, respectively. Their phase structure, surface topography, and energy gap were characterized by X-ray diffractometer, atomic force microscope, and fluorescence spectrometer. Photocatalytic activity of the films was evaluated by light induced degradation of methyl orange (C₁₄H₁₄N₃NaO₃S) solution using a high pressure mercury lamp as lamp-house. The relation of photocatalytic activity and annealed temperature was studied in detail. It is found that the crystal phase transforms from amorphous to anatase, and rutile structure with annealing temperature increasing from room temperature to 1200 °C. Energy gap varies with annealing temperature. Photocatalytic activity is dependent on energy gap and grain size. Suitable energy gap from 2.97 to 3.07 eV is favorable for creation of electronic-hole pairs that make the films show excellent photocatalytic activity.     

Ag surfactant effects of TiO2 films prepared by sputter deposition

The surfactant effect of Ag on the thin film structure of TiO₂ by radio frequency magnetron sputtering has been investigated. Comparisons between the atomic force microscopy images revealed that the surface roughness of TiO₂ film mediated by Ag was smaller than that of the TiO₂ film without Ag. The surface segregation effect of Ag was confirmed using X-ray photoelectron spectroscopy. The results of X-ray diffraction revealed that the initial deposition of a 0.4 nm thick Ag surfactant layer onto a Fe buffer layer prior to the deposition of the TiO₂ film reduced the rutile (110) growth and enhanced the anatase (100) growth. It was concluded that Ag was an effective surfactant for changing the thin film structure of TiO₂ on the Fe buffer layer. The photocatalytic effect of the fabricated TiO₂ film was also investigated using the remote oxidation process. TiO₂ films with the Ag surfactant exhibited higher photocatalytic activity than conventionally deposited TiO₂ films.     

Study on Raman line at 1080.2 cm in ZnO thin films prepared under high RF power

ZnO thin films were prepared on glass or on homo-buffer/glass by a RF magnetron sputtering method at RF power of 100-550 W. The structural and Raman characteristics of the films were analyzed by X-ray diffraction and Raman scattering. There appeared a sharp peak of 1080.2 cm⁻¹ near the A₁(2LO) mode (1156 cm⁻¹) of ZnO in the Raman spectra when the RF power was higher than 300 W. In this case, the (100) peak of ZnO film appeared obviously. It was speculated that the Raman mode at 1080.2 cm⁻¹ was induced by the ordered distribution of Zn_i defects in ZnO lattice.     

射频磁控溅射制备TiO2-xNx薄膜及其光催化特性研究

利用射频磁控溅射在玻璃衬底上制备了透明TiO2 和 TiO2-x Nx 薄膜样品,通过 X 射线衍射(XRD)、原子力显微镜(AFM)及 UV Vis分光光度计等测试手段表征了样品的结构、形貌和光催化性能。结果表明制备的薄膜为锐钛矿相结构。随着 N2/Ar气流比的增大薄膜样品出现新的物相,吸收光谱向可见光方向展宽,在N2/Ar流量比为 3∶100 时,制备的薄膜在可见光区具有很好的光催化性能。     

Antibacterial property of CuCrO2 thin films prepared by RF magnetron sputtering deposition

The present study investigates the antibacterial properties of CuCrO₂ thin film surfaces against Escherichia coli (E. coli) bacteria. Single-phase delafossite type copper-chromium oxide (CuCrO₂) thin films were prepared on glass substrate by radio-frequency (RF) magnetron sputtering, followed by two-step post-deposition annealing at 400 °C with 5% forming gas and at 600 °C in a nitrogen atmosphere. The structure of the CuCrO₂ thin films was confirmed by X-ray diffraction. The transmittance properties were measured by a UV–Vis spectrometer. The ISO 22196 method was utilized to evaluate the colony forming unit (CFU) of E. coli on the CuCrO₂ surface after several hours. The experimental results find the CuCrO₂ surface to exhibit superior antibacterial performance and an optical transparency of >70% in the visible region with a thickness of 100 nm. A novel transparent antibacterial coating has been demonstrated in the present study.