一种1.25 Gbps CMOS以太网串并/并串转换电路

用0．35μm CMOS工艺实现了单芯片1．25Gbps千兆以太网串并／并串转换电路。该电路兼容ANSI的光纤信道物理层标准(FC-0)。与同类电路相比，其核心单元—并串转换电路和串并转换电路—具有结构简单、面积小的优点[1，2]，其高速串行数据随机抖功只有同类电路的一半。另外，电路中还集成了锁相环环路滤波电容。     

一种超高速并串转换电路的新实现方式

在超高速并串转换接口电路设计应用中,提出了一种新的双路恒流结构方式。通过对传统触发器寄存结构和双路恒流结构进行对比,结合电路产品(16位4 G并串转换集成电路),说明了采用新结构方式———双路恒流结构———进行超高速、低功耗并串转换电路设计,在提高电路工作速度、降低功耗方面所取得的成功和优点。     

无线电基础知识讲座

电路分析中常用的定律和定理（下） 10网络转换原理 串、并联转换原理由串联或并联电路组成的二端网络，它们之间可以进行等效转换。所谓等效就是当用恒压源或恒流源对此二端网络供电时，两网络的输入电压U与输入电流I之比，即U／I相等。在串、并联电路相互等效的情况下，两者可以相互替代，这就是串、并联转换原理。     

毫米波MEMS移相器模块用驱动电路研究

设计了一种4 bit毫米波MEMS移相器驱动电路,主要由24 bit串并转换电路、高压控制电路和升压电路组成。利用24 bit串并转换电路和高压控制电路,实现了波控机控制系统与MEMS移相器的接口转换,满足毫米波MEMS移相器对正反相驱动电压的要求。采用升压电路,实现了5 V电压向80 V毫米波MEMS移相器驱动电压的DC/DC转换。测试结果表明,设计的MEMS移相器驱动电路实现了对4 bit MEMS移相器的16态相移控制,驱动电路的静态电流仅为12.4 mA@5 V,满足了毫米波MEMS移相器对驱动信号的要求和相控阵天线演示系统对低功耗的要求,解决了毫米波MEMS移相器低成本驱动问题。     

一种全CMOS工艺吉比特以太网串并-并串转换电路

本文介绍了一种单片集成的吉比特以太网串并－并串转换电路。在芯片中，模拟锁相环产生1．25GHz高速时钟（当芯片用于光纤网络，时钟速率就为1．06GHz)，同时一个10到1多路选择器完成并行数据到串行的转换。在接收端，差分输入信号依次经过均衡电路、双端－单端转换电路转换成数字信号。同时，数据和时钟提取电路提取出时钟，并将数据重新同步。最后，串并转换电路完成串行－并行转换和字节同步。实验芯片采用0．35μmSPTM CMOS工艺，芯片面积为1．92mm^2，在最高输入输出数据波特率条件下的功耗为900mW。     

浅谈双口网络参数的课堂教学

双口网络是电路理论教学中的一个重要的组成部分,如何让学生学好并灵活应用网络参数分析一些电路特性一直是电路理论教学探讨的问题。本文结合压电变压器的集总参数等效电路模型,在满足端口条件的前提下,分析压电变压器端口并—并、并—串、串—并和串—串的四种可能连接方式的特点,并利用参数之间的相互转换关系由Y参数描述压电变压器电压增益、输出功率和传输效率等电气特性。     

砷化镓单电源电路研究

本文对BFL单元电路进行了改进，首次提出一种新型的GaAs单电源单元电路，并研究了该单元电路与SiTTL电路的接口电路，实验结果表明该单元电路的设计是可行的，适合于制作中、小规模集成电路．     

动态时序电路和广义时序机

本文基于用广义输入信号表示的广义时序机，研究动态时序电路，考虑电容负载时得出动态单元电路特征方程，利用电容存储信息和触发器的类似性，建立了时序电路统一理论，将常规时序电路和动态时序电路理论统一起来，证明实现动态时序电路的条件，结合实例论述各型动态时序电路，伪动态时序电路和静态时序电路的开关级结构间的等价转换。     

一种抗干扰能力极强的计算机通信接口电路

设计了一种结构简单，抗干扰能力极强的计算机通信接口电路。该电路利用模拟开关实现了全数字二态电平（1，0）与三态电平(1，0，-1)之间的相互转换；利用模拟开关导通电阻的动态效应以及MOS晶体管开启电压Vτ的衬偏效应，提高了接收电路的抗干扰能力，提出了一种与共模干扰无关的模拟数字混合接收电路。     

微机械音叉陀螺外围电路研究及仿真

介绍一种微机械音叉陀螺外围电路的基本结构及各组成部分的工作原理。针对机械敏感单元设计了陀螺的外围电路，通过系统分析，建立了数学模型，并利用Matlab对整个模型进行行为级仿真，验证所设计电路的可行性。仿真结果为电路的设计、调试提供了有利的分析方法和手段，具有一定指导意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.