看板在晶圆厂清洗-炉管间的派工应用及仿真

看板是实现拉式派工的有效工具,它可以用于晶圆制造厂清洗区和炉管区之间的动态派工.用Extend仿真建模软件建立了有"重入特性"的晶圆厂仿真模型.通过晶圆厂仿真模型进行模拟,结果显示看板可以解决晶圆生产在清洗工艺后存在违反"等待时间限制"的情况,可以显著提高炉管设备的利用率,并且明显降低产品的生产周期时间.     

深亚微米时代清洗技术之应用与挑战 《半导体国际》第五届晶圆清洗技术研讨会

在标准的IC制造工艺中,涉及晶圆清洗和表面预处理的工艺步骤就有100多步,在整个ICN造的发展过程中,湿法清洗一直以来在晶圆清洗中占着主导地位,其中浸泡式(批处理)和喷雾式(单晶圆)目前     

大日本网屏推出支持多种清洗方式的晶圆洗净装置

日本设备厂商大日本网屏制造7月将开始销售可支持多种清洗方式的枚叶式晶圆清洗设备“SS-3100”。据悉，该款产品支持300mm晶圆，可用于45nm工艺以下的LSI制造。通过引进晶圆高速搬运系统，该产品的单位时间处理量（Throughput）比上一代产品“SS-3000”（180枚／h）提高67％，达到300枚／h。     

半导体晶圆自动清洗设备

主要介绍了半导体晶圆RCA清洗工艺以及半导体晶圆自动清洗设备在生产中的结构设计和应用情况。在工艺模块和伺服机械传送方面体现了湿法化学的独创性和实用性。解决了晶圆清洗技术中晶圆清洗效果的一致性,在半导体IC、材料、器件领域的清洗工艺中得到广泛使用,具有极大的社会经济效益。     

适用于小型生产线运行的单晶圆清洗技术的实现

利用臭氧消毒水和淡氟氢酸清洗技术,使设备生产厂家的单晶圆旋转清洗工艺适应向小型生产线转入的应用,从而使生产周期的缩短成为可能。     

功率场效应晶体管晶圆超薄磨片工艺开发

晶圆超薄磨片工艺是为减小功率开关管导通电阻,工艺中存在超薄晶圆磨片后转运过程中破片及超薄晶圆背面蒸镀金属等问题.现有的晶圆磨片的一般厚度为200μm,超薄磨片的目标是100μm.本研究采用同一批次晶圆,分批,2片超薄研磨,其他采用正常工艺减薄,封装测试条件相同.对比封装测试完毕的器件的导通电阻,超薄研磨器件的导通电阻减小约10%.     

新型阻挡层抛光液对CMP后清洗效果的影响

当集成电路制造工艺缩小到14 nm及以下,阻挡层抛光清洗后表面缺陷严重影响芯片成品率。针对新型碱性阻挡层抛光液,与线上抛光液对比,通过检测抛光清洗后的晶圆表面缺陷,研究了不同阻挡层抛光液对CMP后清洗效果的影响。研究结果表明：当新型碱性阻挡层抛光液中不含盐酸胍时,抛光清洗后的晶圆表面存在大量划伤,盐酸胍的加入可同时提高TEOS和Cu的去除速率,且显著降低表面划伤数量;使用单一成分清洗液对不同阻挡层抛光液CMP后的晶圆清洗,新型阻挡层抛光液抛光清洗后的晶圆表面无任何污染颗粒,利于CMP后清洗,而线上抛光液的晶圆表面存在大量有机残留物和氧化物颗粒,需复配清洗液清洗;相比较线上阻挡层抛光液+复配清洗液工艺,使用新型碱性阻挡层抛光液+单一成分清洗液工艺产生的Cu/Ta界面腐蚀小,抛光清洗后的晶圆表面无明显的宽线条边缘缝隙和细线条表面塌陷的现象。     

半导体晶圆制造中产量与生产周期的优化方法

在晶圆制造厂中,有时为了提高设备利用率而盲目地增加投料/产出速率,造成生产周期时间增长,在制品增多.本文建立效用函数和多目标决策对其进行优化选择,并且阐述了在晶圆制造厂实际生产中,经济原则对周期时间的影响.     

CMP工艺晶圆表面颗粒去除问题的研究

CMP之后晶圆表面颗粒数目是CMP工艺的一项关键指标。针对Si CMP之后的清洗效果，分析了晶圆表面亲疏水性、清洗液浓度方面对清洗效果的影响。结果表明通过一定浓度的清洗液清洗抛光之后晶圆能取得较好的表面颗粒数量，满足工艺需求。     

单片晶圆兆声清洗的仿真模型研究

通过研究单片晶圆兆声清洗过程中兆声头在晶圆表面的运动轨迹和能量积累过程,构建了单晶圆清洗的兆声能量分布和颗粒去除过程的数学模型。通过Mathematica 9.0对模型进行了运算和简化,经过离散化处理后,运用MATLAB对几种硅片转速和兆声臂转速的组合在硅片上的能量分布和颗粒分布进行了模拟仿真。发现简单组合比例下清洗效果与转速比例和清洗轨迹复杂程度密切相关,而固定半径扫描可以使能量分布更均匀,减少局部能量集中对晶圆IC的破坏,并且可以缩短清洗时间。     

Single-wafer/mini-batch approach for fast cycle time in advanced 300-mm fab

Advanced 300-mm application specific integrated circuit/system-on-chip (ASIC/SOC) fabs with multiproduct and multiprocess models will require both a high level of flexibility and efficiency to achieve cost effective manufacturing cycle times. One of the main detractors for cycle time and fab flexibility is a batching requirement on certain types of processing that makes lots waiting for the batch to be completed and generates wip bubbles downstream. This paper reviews the front-end steps within a semiconductor manufacturing flow where batching requirements may be replaced by single-wafer or mini-batch alternatives for improved cycle time. Encouraging process results for front-end applications for potential single-wafer replacements are presented. It is demonstrated that single-wafer oxidation, LPCVD and cleaning offer a large potential cycle time gain but currently have different levels of maturity as potential batch technology replacements. In addition to the process feasibility, a DOE based on dynamic simulation is conducted enabling the quantification of potential gains in cycle time obtained by switching to single-wafer or mini-batch strategy instead of batch strategy, preferring integrated metrology and reducing mini-lots size. It shows that, in comparison to the baseline model (100%), the manufacturing cycle time may decrease down to 65% for mini-lots and to 78% for standard production lots.     

Novel Single-Wafer Single-Chamber Dry and Wet Hybrid System for Stripping and In Situ Cleaning of High-Dose Ion-Implanted Photoresists

There is increasing demand for moving from batch immersion tools to single-wafer spin tools for silicon wafer cleaning, etching, and photoresist/residue removal in advanced semiconductor manufacturing. However, high-dodse ion-implanted photoresist removal using a conventional single-wafer spin tool is very difficult. We have developed a novel single-wafer single-chamber dry and wet hybrid system in combination with dry ashing and moderate-temperature wet-cleaning treatments by implementing an atmospheric-pressure plasma unit into a conventional single-wafer spin cleaning tool. This compact single-wafer single-chamber system can completely remove the hardened photoresist due to high-dose ion-implantation by an atmospheric-pressure plasma ashing process followed by an in situ wet chemical process in the same single chamber within 2 min. This single-wafer single-chamber dry/wet hybrid system offers less than 1/3 smaller footprint, less than 1/4 shorter cycle time (for 50 wafer processing), and potentially better process control and less contamination risk, as well as lower equipment cost, compared to the conventional combination of two separate dry- and wet-processing systems.      

The impact of single-wafer processing on semiconductor manufacturing

In this paper, we have described the importance of single-wafer processing (SWP) in semiconductor manufacturing. As compared to batch processing, reduced cycle time, better control of surface and interface properties, and reduced defect densities are some of the attractive features of SWP. We have provided the example of new SWP tools that have the answers to address virtually all process integration issues in dealing with new materials as well as conventional materials in ultra small dimensions. Driven by reduced I/O pitches, and emergence of system-on-chip, system-in-package or system-on-package as the driver of semiconductor growth, SWP tools have started to play an important role in the surface cleaning in IC assembly and packaging. Global acceptance of SWP in manufacturing can address the supply chain problem of the semiconductor industry.     

自动化蚀刻控制下的可重复性

以氟化氢为基础的溶液被广泛地用在扩散前清洗工艺中的二氧化硅清洗与蚀刻中.为降低不同批次之间工艺效果的差别,也就是增加批次与批次之间工艺效果的可重复性,更好地控制氧化物地腐蚀显得尤为重要.自动化的蚀刻控制体系弥补了在线的化学品浓度与反应温度的偏差而达到了精确的蚀刻目标.     

微电子封装中等离子体清洗及其应用

随着微电子工艺的发展,湿法清洗越来越局限,而干法清洗能够避免湿法清洗带来的环境污染,同时生产率也大大提高.等离子体清洗在干法清洗中优势明显,本文主要介绍了等离子体清洗的机理、类型、工艺特点以及在微电子封装工艺中的应用.     

Characterization of Wet Batch Cleaning Process in Advanced Semiconductor Manufacturing

Wet cleaning of silicon wafers is an essential step in the fabrication of semiconductor devices. With diminishing feature and, consequently, critical particle sizes, cleaning requirements have become even more stringent. Hence, it is imperative that an understanding of the cleaning process be obtained in order to achieve the desired cleaning efficiencies. Ultrasonic and megasonic cleaning baths are the norm in advanced fabrication lines for batch cleaning of wafers. The fluid flow in these baths is quite complex and strongly influences removal of contaminant matter from the wafer surface. To better understand the effect of fluid flow on cleaning of polymeric contaminants, chemical etch experiments have been conducted using a cleaning solution on tetra-ethyl orthosilicate (TEOS) blanket wafers. The experimental results indicate a certain degree of nonuniformity and asymmetry in an otherwise symmetric system. A qualitative analysis of the observed nonuniformity has been conducted through computational fluid dynamics (CFD) simulations of the flow within the tank using a commercial CFD tool, FLUENT 6.2. An analogous heat transfer model has been set up with the CFD model, to simulate mass transfer effects resulting from the etching of the TEOS film in the experiments. A comprehensive sensitivity analysis has also been conducted within the CFD model for various parameters that might be responsible for the experimental asymmetry.      

300 mm圆片后抛光清洗--满足纳米微粒去除的挑战

随着半导体制造关键尺寸的继续缩小,硅片表面清洗要求变得更加严格。当前这一要求包括有效地去除硅片表面的纳米微粒(<100nm),并控制主要金属杂质不超过1E+10原子/cm~2。传统的擦片机和兆声湿式批量清洗工艺面临达到这些目标的挑战。单片清洗澡机在硅片表面产生更加均匀的声强分布,更有效地去除了纳米微粒。介绍了湿式批量洗洗机和单片清洗澡机的兆声清洗效果。湿式批量浸泡术和兆声能量单片清洗机结合可以有效地去80mm磨料微粒。     

Effective cleaning process and its influence on surface roughness in anodic bonding for semiconductor device packaging

Wafer cleanliness and surface roughness play a paramount role in an anodic bonding process. Impurities and the roughness on the wafer surface result in unbonded areas which lead to fringes and Newton׳s rings. With an augment in surface roughness, lesser area will be in stroke thus making more pressure and voltage to be applied onto the wafers for better bonding. Eventually it became mandatory to choose the best cleaning process for the bonding technology that can substantially reduce the impurities and surface roughness. In this paper, we investigate the bonding of silicon/oxidized silicon on Pyrex (CORNING 7740) glass with respect to surface roughness and cleanliness of the wafers by performing three renowned cleaning processes such as degreasing, piranha, RCA 1& 2 (SC‐Standard Cleaning 1 and 2) and found that RCA compromises the best between the roughness and cleanliness. Studies were also extended to find out the effects of applied voltage and load on the bonded surface. It was observed for samples cleaned with RCA, an increase of 45% in maximum current and decrease of 75% in total bonding time with the applied load and voltage among all the cleaning techniques used. Three dimensional structures for pressure sensor application were successfully bonded by selecting the appropriate load and cleaning process. Atomic force microscopy analysis was done to investigate the surface roughness on silicon/oxidized silicon and Pyrex glass for different cleaning processes. Scanning electron microscopy and optical imaging were performed on the interface for the surface integrity of the bonded samples.     

Adaptive robust impulse noise filtering

It is well known that when data is contaminated by non-Gaussian noise, conventional linear systems may perform poorly. The paper presents an adaptive robust filter (adaptive preprocessor) for canceling impulsive components when the nominal process (or background noise) is a correlated, possibly nonstationary, Gaussian process. The proposed preprocessor does not require iterative and/or batch processing or prior knowledge about the nominal Gaussian process; consequently, it can be implemented in real time and adapt to changes in the environment. Based on simulation results, the proposed adaptive preprocessor shows superior performances over presently available techniques for cleaning impulse noise. Using the proposed adaptive preprocessor to clean the impulsive components in received data samples, conventional linear systems based on the Gaussian assumption can work in an impulsive environment with little if any modification. The technique is applicable to a wide range of problems, such as detection, power spectral estimation, and jamming or clutter suppression in impulsive environments