基于倒扣技术的190~225 GHz肖特基二极管高效率二倍频器

基于分立式GaAs肖特基势垒二极管,研制出了190～225 GHz高效率二倍频器.50 μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6％,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190～225 GHz,测得倍频效率典型值为7.5％;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.     

基于倒扣技术的190～225GHz肖特基二极管高效率二倍频器（英文）

基于分立式GaA s肖特基势垒二极管,研制出了190~225 GHz高效率二倍频器.50μm厚石英电路利用倒扣技术,实现二极管的良好散热、可靠的射频信号及直流地.通过数值分析方法,二极管非线性结采用集总端口模拟,提取二极管的嵌入阻抗,以设计阻抗匹配电路.在202 GHz,测得最高倍频效率为9.6%,当输入驱动功率为85.5 mW时,其输出功率为8.25 mW;在190~225 GHz,测得倍频效率典型值为7.5%;该二倍频器工作频带宽、效率响应曲线平坦,性能达到了国外文献报道的水平.     

基于NEDI砷化镓肖特基二极管的D波段和G波段倍频源

基于南京电子器件研究所(NEDI)的GaAs工艺线,通过分析器件的有源层(缓冲层、外延层)材料掺杂浓度和厚度、肖特基接触面积等,综合优化二极管性能,研制出了截止频率为3.2 THz的太赫兹变阻二极管.基于该二极管,通过建立其三维场结构,采用电磁场和电路仿真软件相结合的方法,一体化设计匹配电路和器件,研制出了D波段和G波段倍频源.D波段二倍频器在152.6 GHz测得最高倍频效率为2.7%,在147.4~155 GHz效率典型值为1.3%.G波段二倍频器在172 GHz测得最高倍频效率为2.1%,在150~200 GHz效率典型值为1.0%.     

W波段宽带高效率电阻性三倍频器设计

本文基于TSC-AP-03020混频二极管设计了W频带全波段三倍频器,考虑到二极管各种寄生参数的影响,采用去嵌入阻抗的方法,提取二极管物理结构的S参数文件,结合二极管SPICE模型,提取二极管的输入阻抗和三次谐波输出阻抗.基于计算的阻抗,综合分析输入输出阻抗匹配网络和波导-鳍线过渡,采用一体化设计方法,提取倍频器无源电路的整体S参数,通过谐波平衡分析方法,优化倍频器的倍频效率.设计的W波段倍频器在100GHz测得最高倍频效率4.2％.在75-110GHz倍频效率典型值为3.5％,倍频效率响应曲线平坦,性能优于国外同类产品水平,解决了W波段宽带信号源的问题.     

基于肖特基势垒二极管的太赫兹固态倍频源和检测器研制

本文基于GaAs肖特基势垒二极管以及混合集成电路工艺,对太赫兹固态倍频和检测技术开展了研究.文章结合肖特基势垒二极管物理结构,采用电磁场仿真软件和电路仿真软件相结合的综合分析方法,对各模块电路进行优化设计,研制出了高倍频效率的倍频源和高灵敏度的检测器(检波器和谐波混频器).0.15THz检波器测得最高检波电压灵敏度1600mV/mW,在0.11~0.17THz灵敏度典型值为600mV/mW,切线灵敏度优于-29dBm.0.15THz二倍频器测得最高倍频效率7.5%,在0.1474~0.152THz效率典型值为6.0%.0.18THz二倍频器测得最高倍频效率14.8%,在0.15~0.2THz效率典型值为8.0%.0.15THz谐波混频器测得最低变频损耗10.7dB,在0.135~0.165THz变频损耗典型值为12.5dB.0.18THz谐波混频器测得最低变频损耗5.8dB,在0.165~0.2THz变频损耗典型值为13.5dB,在0.21~0.24THz变频损耗典型值为11.5dB.     

高效170 GHz平衡式肖特基二极管倍频器

太赫兹源的输出功率是限制太赫兹技术远距离应用的重要参数。为了实现高效的太赫兹倍频器,基于高频特性下肖特基二极管的有源区电气模型建模方法,利用指标参数不同的两种肖特基二极管,研制出了两种170 GHz平衡式倍频器。所采用的肖特基二极管有源结区模型完善地考虑了二极管IV特性,载流子饱和速率限制,直流串联电阻以及趋肤效应等特性。通过对两种倍频器仿真结果进行对比,完备地分析了二极管主要指标参数对倍频器性能的影响。最后测试结果显示两种平衡式170 GHz倍频器在155~178 GHz工作带宽内的最高倍频效率分别大于11%和24%,最高输出功率分别大于15 mW和25 mW。从仿真和测试结果表示,采用的肖特基二极管建模方法和平衡式倍频器结构适用于研制高效的太赫兹倍频器。     

2-20GHz宽带倍频器研究

研制了一种2～20GHz超宽带微波倍频器。该倍频器的核心是四只性能一致的肖特基势垒二极管形成的桥形堆,输入、输出电路则采用了适于宽带匹配的巴伦结构。在要求的频段范围内达到的指标：变频损耗优于15dB,典型值10dB;基波隔离优于25dB,典型值30dB;三次谐波抑制优于29dBc,典型值为35dBc。测试表明,该倍频器具有良好的可靠性和可重复性。     

150 GHz大功率二倍频器

基于六阳极结反向串联型砷化镓平面肖特基容性二极管,采用平衡式二倍频器结构,成功研制出一种大功率150 GHz二倍频器。使用三维电磁场与非线性谐波平衡联合仿真方法,提高了仿真结果和实际的吻合度,并根据设计结果完成倍频器的加工、装配和测试。倍频器在输出频率为146~158 GHz下的倍频效率达到7%以上;在输出频率为154 GHz时,倍频效率达到12%,输出功率达到71 mW。     

260 GHz GaN高功率三倍频器设计

基于GaN太赫兹二极管芯片,采用非平衡式电路结构,设计了一款260 GHz三倍频器。采用GaN肖特基二极管芯片提高电路的耐受功率和输出功率;采用“减高+减宽”的输出波导结构抑制二次谐波;采用高低阻抗带线结构设计了倍频器的输入滤波器和输出滤波器。测试结果显示,该三倍频器在261 GHz峰值频率下,实现最大输出功率为69.1 mW,转换效率为3.3%,同时具有较好的谐波抑制特性。     

大功率单路和功率合成式100~115GHz 肖特基平衡式二倍频器

研究了基于肖特基二极管的单路和功率合成式110 GHz大功率平衡式二倍频器。单路倍频器电路具有33%的峰值测试效率,且其工作带宽超过13.6%。另外,采用了不同的双路合成结构来实现两种不同的合成式110 GHz倍频器。该功率合成式倍频器在两只127 μm 厚的 ALN 基片上焊接了四个分立的肖特基二极管。在800 mW的驱动功率下,两种合成式倍频器都测得了大于200 mW的输出功率,证明了利用该合成式倍频结构可实现更高输出功率。     

应用于EoC芯片的1.2 GHz/2 GHz/2.4 GHz三频段上混频器

采用0.13 μm RF CMOS工艺,设计了一款可应用于EoC收发芯片的三频段上混频器,通过改变接入并联LC负载谐振网络中电容的值,使电路分别工作在1.2 GHz,2 GHz,2.4 GHz频段。在3.3 V电源电压下,1.2 GHz,2 GHz,2.4 GHz频段上,总电流为35.1 mA;单边带(SSB)电压转换增益分别为3.77 dB,4.97 dB,4.78 dB;输出1 dB压缩点分别为-0.22 dBm,0.78 dBm,0.5 dBm;噪声系数分别为5.13 dB,5.76 dB,6.67 dB。通过控制输入跨导级的偏置实现混频器的开启和关断,上混频器的开启时间为200 ns,关断时间小于100 ns。     

Propagation Tests for 23 GHz and 40 GHz

Propagation tests were conducted on the 23 GHz and 40 GHz bands on the same 1.08 km path in Nagoya City, Japan, for two years (1979 and 1980), in order to collect circuit design data for a highly reliable millimeter wave intracity communication link. The path attenuation versus 1 min rain rate relation for the same cumulative percentage of time was obtained and compared to the theoretical curves of various raindrop distributions such as Laws and Parsons. We found some discrepancies on both the high rain rates, exceeding 50 mm/h, and low rain rates. The former was thought to be due to a mismatch between the rain gauge integration time and the path attenuation time constant. From the coincidence of the autocorrelation functions of both the rain rate and path attenuation, we were able to determine the best fit integration time. The latter was due to the loss of the radome in the rain. The circuit outage of the short path millimeter wave radio link was strongly affected by the heavy rains which exceeded 60 or 100 mm/h in thunderstorms, fronts, and typhoons, and was characterized by bursts of rain. Based on the 1 min rain rate records for five years, 1975-1979, we found the heavy rain statistics obeyed Poisson's distribution. Finally, we introduced a propagation test of 40 GHz through fire flames and found the losses to be low.     

Rainfall attenuation at 36 GHz and 55 GHz

Simultaneous rainfall measurements at 36 GHz and 55 GHz on a common 4.1 km path show, under the conditions of these experiments, that the attenuation due to rainfall lies between the attenuation values predicted by the lognormal and the Best rain drop size distributions.     

A 75 GHz to 115 GHz quasi-optical amplifier

A wideband quasi-optical amplifier employing two pyramidal back-to-back horns has been developed. Using a four-stage W-band low noise amplifier (LNA) designed and fabricated by Martin Marietta Laboratories, the quasi-optical amplifier gives a system gain greater than 11 dB from 86 GHz to 113 GHz without any low frequency oscillations. A peak system gain of 15.5 dB is measured at 102 GHz, and the measured noise figure of the system is 7.4 dB at 94 GHz. The quasi-optical amplifier design maintains the same polarization of the received and transmitted signal, provides better than -40 dB isolation, and can be fabricated monolithically at millimeter-wave frequencies     

8GHz～12GHz推-推压控振荡器设计

文章介绍了利用推-推的方法实现宽带低相噪压控振荡器,论述了其基本原理和分析方法,并利用计算机辅助设计(CAD)对该方法进行了分析。根据分析结果制作了8GHz～12GHz压控振荡器。测试结果表明,分析结果较好地反映了实际结果。推-推的方法能有效提高晶体管的工作频率,同时还可以改善压控振荡器的负载牵引能力。这种方法适用不同形式的器件,对高频率、宽频带压控振荡器的制作有一定指导意义。     

0.9GHz和2.4GHz 双频段 SiGe HBT 低噪声放大器的设计

This paper presents design and implementation of a dual-band LNA using a 0.35μm SiGe HBT process for 0.9 GHz GSM and 2.4 GHz WLAN applications.PCB layout parasitic effects have a vital effect on circuit performance and are accounted for using electro-magnetic（EM） simulation.Design considerations of noise decoupling, input/output impedance matching,and current reuse are described in detail.At 0.9/2.4 GHz,gain and noise figure are 13/16 dB and 4.2/3.9 dB,respectively.Both S₁₁ and S₂₂ are below -10 dB.Power dissipation is 40 mW at 3.5 V supply.     

Sheetlike Waveguide for 2.4 GHz and 5 GHz Bands

We present a useful design for a free access mat which supports two frequency bands of 2.4 GHz and 5 GHz. The free access mat is a sheet‐shaped waveguide which consists of a tightly coupled double‐layered microstrip resonator array. It provides easy access for devices in short‐range wireless communications. Interference is a common problem with conventional applications which use free space transmission. Our proposed wireless access system uses a subsidiary waveguide, the free access mat. Wireless devices are proximately coupled to the free access mat through which the coupled electromagnetic (EM) wave transmits. The arrival domain of the EM wave of an application is therefore limited to an area close to the free access mat. Wireless devices can be coupled to the free access mat at an arbitrary position without contact. We previously presented a free access mat for a single frequency band. This paper presents a free access mat for the two frequency bands of 2.4 GHz and 5 GHz. The free access mat uses a ring patch resonator array which is easily excited by typical antennas and is resistant to interference. These characteristics are demonstrated by numerical simulation and confirmed by experiment.     

Sky brightness temperature measurements at 135 GHz and 215 GHz

Zenith sky brightness temperature measurements at 135 GHz and 215 GHz have been made on a semicontinuous basis for a period of seven months in the Gunston Cove area of Northern Virginia. These measurements were made using Dicke receivers with noise figures of 8 dB and 14 dB, respectively. A liquid nitrogen cooled load was used to calibrate the measurements. The 215 GHz sky temperature was on the average about 80 K greater than that at 135 GHz. Clouds were found to cause the sky temperatures to fluctuate as much as 150 K in a few minutes. Graphs are presented to outline general trends of the data as well as representative days, including the blizzard on February 11, 1983. In addition, empirical relations between precipitable water vapor, atmospheric water density at the surface, sky brightness temperatures, and zenith attenuation are given for visually clear days.     

2.4GHz和5GHz WLAN干扰对比分析

通过对WLAN干扰机制和干扰类型进行较为详细的理论分析,然后进行了全面的实际测试,得出了2.4 GHz WLAN的干扰较严重,5 GHz WLAN干扰比较小的结论。这一结论为5 GHz WLAN的引入提供了较为有力的依据。     

应用于26 GHz-41 GHz频率综合器的高速可编程分频器的设计

毫米波频率综合器中的重要模块之一高速可编程多模分频器,它主要用于对VCO的输出信号进行分频从而获得稳定的本振信号,它的性能影响整个毫米波频率综合器性能。本文设计的一种高速、低功耗、分频比可变的分频器具有非常重要的意义[1]。根据26 GHz-41 GHz硅基锁相环频率综合器的系统指标,本文基于TSMC 45nm CMOS工艺,设计实现了一种高速可编程分频器。本文采用注入锁定结构分频结构实现高速预分频,该结构可以实现在0 d Bm的输入功率下实现25 GHz-48 GHz的分频范围、最低功耗为:2.6 m W。基于脉冲吞咽计数器的可编程分频器由8/9双模分频器和可编程脉冲吞咽计数器组成。其中8/9双模分频器由同步4/5分频器和异步二分频构成,工作频率范围10 GHz-27 GHz,最低输入幅度为:300 m V,最低功耗为:1.6 m V。可编程吞咽计数器采用改进型带置数功能的TSPC D触发器,该可编程分频器的最大工作范围:25 GHz;最小功耗为:363μW。本文设计的高速可编程多模分频器,可以实现32-2 062的分频比;当工作于28 GHz时,相位噪声小于-159 dBc/Hz。动态功耗为5.2 m W。