A coherent all-solid-state laser array using the Talbot effect in athree-mirror cavity

Lateral mode coupling in a diode-pumped Nd:YAG microchip laser array is demonstrated with a Talbot cavity for the first time. The relatively low laser gains of solid-state lasers compared with diode lasers and CO₂ lasers, to which the Talbot cavity has already been applied successfully, are solved by employing a novel auxiliary Talbot cavity configuration. A brighter twin-peak far-field pattern indicating an out-of-phase array mode, whose spot is 9.3 times smaller than that obtained by incoherent superposition of the individual microchip laser outputs, is obtained from the phase-locked microchip laser array with a mode-selecting slit. Without the mode-selecting slit, a far-field pattern with a single narrow peak is obtained, showing that the array is locked in an in-phase mode, presumably because of multiple reflections in the auxiliary Talbot cavity     

低压驱动复合腔电光调Q微晶片激光器

复合腔电光调Q微晶片激光器是一种集成化的固体激光器,具有体积小、基横模、单纵模、线偏振运转,输出脉冲重复频率高,脉宽窄的优点,是高重复频率、高光束质量的主振荡功率放大器(MOPA)激光系统的理想种子源。进行了低压驱动复合腔电光调Q微晶片激光器的实验与理论研究。根据理论分析,增加电光晶体长度和提高端面反射率可减小标准具透射谱半宽度,进而降低驱动电压。设计了两套激光器实验方案。实验中激光增益介质和电光晶体分别选用Nd:YVO4和LiTaO3,谐振腔尺寸小于3 mm×3 mm×2.5 mm。方案1主要研究增加电光晶体长度后的激光器输出特性,在抽运功率184 mW,240 V驱动电压下,可实现300 kHz激光脉冲输出,脉冲宽度10 ns,峰值功率9.4 W。在方案2中,通过进一步提高端面反射率,在短时间内可输出1 MHz脉冲。     

Design of distributed Bragg reflector structures for transverse-mode discrimination in vertical-cavity surface-emitting lasers

An angular spectrum of plane-wave representation is employed to calculate the discrimination between the fundamental and higher order transverse modes in step-index-guided vertical-cavity surface-emitting lasers. The effect of material composition and number of layer pairs in the distributed Bragg reflectors, as well as mode size and structure, are examined with the goal of optimizing the mode discrimination for better mode stability and higher single-mode power. In particular, it is shown that decreasing the width of the distributed Bragg reflector stopband, by means of controlling the material composition, improves significantly the mode discrimination.     

键合Nd∶YAG/Cr4+∶YAG被动调Q微片激光器的优化设计

为了提高LD抽运脉冲微片激光器的输出性能和系统的集成度,采用龙格-库塔法对包含自发辐射与抽运速率的被动调Q速率方程进行了数值求解,结合被动调Q激光器输出参量的表达式对LD端面抽运的键合Nd∶YAG/Cr4+∶YAG微片激光器输出参量进行了数值仿真。结果表明,利用长度1mm/1.5mm的键合Nd∶YAG/Cr4+∶YAG晶体作为增益介质,当Cr4+∶YAG的初始透过率为75%、输出镜的透过率为30%、抽运光和腔内基模光半径均为100μm时,能够在抽运功率为4.5W的条件下实现平均功率0.7W、脉冲宽度174ps、重复频率16.1kHz的理论激光输出。该研究对被动调Q微片激光器的参量优化和应用具有理论指导意义。     

LD 脉冲泵浦被动调Q 窄脉冲大能量全固态激光器

利用Nd:YAG/Cr4+:YAG 键合微片激光晶体研制了被动调Q 大能量窄脉冲的全固态激光器,激光器采用脉冲激光二极管泵浦方式,设计了本振级和两级放大结构,分析了激光器系统的自激振荡和其抑制方法,在激光器本振级获得稳定脉冲激光输出的基础上,当两级放大器泵浦电流分别为83A 和85 A 时,获得了最大单脉冲输出能量为120 mJ,脉冲宽度为1.28 ns 的1 064 nm 激光输出,激光通过倍频后可得到65 mJ 的532 nm 绿光输出,其窄脉宽和高光束质量特性可为飞秒激光器啁啾放大提供良好的泵浦源。     

双频微片激光器的功率均衡机制实验研究

为了研究双频Nd:YVO₄微片激光器的功率均衡机制,利用实验研究分析了微片激光器的抽运电流、工作温度和谐振波长等参量之间关系。不断增大双频激光器抽运电流,通过降低晶体温度不断重新实现双频激光功率的均衡,最终获得了不同抽运电流下的双频激光器的功率均衡温度,以及双频功率积与抽运电流的关系数据。结果表明,双频激光信号功率均衡温度与抽运电流呈分段负相关,双频功率积与抽运电流呈正相关。此结果说明通过改变抽运电流和温控温度可以实现功率可调的功率均衡的双频激光信号输出。     

Array-Format Microchip Semiconductor Disk Lasers

We report a detailed study of an array-format 1.055- $mu{hbox {m}}$ microchip semiconductor disk laser which uses a microlens-patterned diamond both as an array of stabilizing output coupling mirrors and a heatspreader. A thermal study of the devices, using a finite element analysis, is carried out and confirms the thermal management capabilities and power scalability of this microlensed diamond configuration. This design is then exploited to perform a systematic study on a set of microchip lasers having the same semiconductor structure but microlenses with differing characteristics. The transverse mode characteristics of individual semiconductor disk lasers are found to depend on the mode-matching condition and on the microlens aperture size. Mode-matched single-device emission in the fundamental mode $({rm M}^{2}sim 1.1)$ with a pump-limited output power of 70 mW is demonstrated. The experimental measurement of the thermal resistance of the device is also shown to agree with the finite element analysis. Finally, array operation, while pumping with a single beam, is reported.      

900-mW high brightness buried ridge lasers by selective areaepitaxy

A study has been made of high power single lateral mode buried ridge lasers fabricated by selective area epitaxy. Several ridge thicknesses have been evaluated simultaneously in a single fabrication run. These lasers operate purely in the fundamental mode to output powers in excess of 450 mW, after which they are subject to beam steering or higher order mode operation. For weakly guided lasers, the output remains in a narrow lobe [full-width at half-maximum (FWHM)] = 4°-6°, stable at a given current value, up to output powers of 900 mW in CW tests     

微片激光器的最新研究进展

微片激光器由于其结构简单紧凑、相干长度长、易实现高亮度的单纵模单频输出,因此成为固体激光器研究领域的热点之一.简要介绍了微片激光器的技术特点及应用,重点介绍了国内外各种微片激光器的最新研究成果及其应用,分析了影响微片激光器发展的因素,并对微片激光器今后的发展趋势进行了展望.     

Nd:YAG微片激光器角漂移研究

角漂移是微片激光器使用和优化设计的重要参数,但有关此类数据报道较少。基于四象限探测器和LabVIEW开发环境设计了一套测量激光器角漂移的测量系统。实现了对Nd…YAG微片激光器的角漂移的实时显示、读取和保存。测量了微片激光器激光指向角漂移的量级及变化规律,为微片激光器的使用和优化设计提供了理论依据。     

Subwavelength Nanopatch Cavities for Semiconductor Plasmon Lasers

We propose and analyze a family of nanoscale cavities for electrically pumped surface-emitting semiconductor lasers that use surface plasmons to provide optical mode confinement in cavities which have dimensions in the 100-300-nm range. The proposed laser cavities are in many ways nanoscale optical versions of micropatch antennas that are commonly used at microwave/RF frequencies. Surface plasmons are not only used for mode confinement but also for output beam shaping to realize single-lobe far-field radiation patterns with narrow beam waists from subwavelength size cavities. We identify the cavity modes with the largest quality factors and modal gain, and show that in the near-IR wavelength range (1.0-1.6 mum) cavity losses (including surface plasmon losses) can be compensated by the strong mode confinement in the gain region provided by the surface plasmons themselves and the required material threshold gain values can be smaller than 700 cm^-1.     

The phase shift of the light output in sinusoidally modulated semiconductor lasers

The dependence of the phase shift of the light output from sinusoidally modulated semiconductor lasers was investigated as a function of the modulation current. This measurement is effective in accurately determining the short damping time constant associated with the relaxation oscillation. The frequency half width of this phase shiftDelta fwas found to be inversely proportional to the damping time constant. For narrow stripe lasers, the phase shift occurs more gradually, which corresponds to the fact that the narrow stripe lasers have shorter damping time constants. To analyze the narrow stripe effect, the recently developed time-dependent self-consistent theory was applied, considering the transverse distribution of both optical field and carrier density and including the carrier diffusion term. This theory can explain the shorter damping time constant for narrow stripe lasers compared with broader stripe lasers.     

一种新的SOI波导拉曼激光器模型及其应用

通过考虑腔中的自发拉曼散射,提出一种新的绝缘体上硅(SOI)波导拉曼激光器物理模型。仿真结果表明该模型能较好地描述其小信号输出特性,实现对该类激光器的快速分析、设计与优化。利用模型对基于多种SOI波导的拉曼激光器进行分析,结果表明室温下只有采用拥有较大拉曼系数,较小线性损耗和较短的有效载流子寿命的SOI波导才能使拉曼激光器达到阈值。提出采用优化SOI波导截面几何尺寸的方法来降低有效载流子寿命,进而提高整体拉曼增益。结果显示该方法可大幅提高SOI波导拉曼激光器的输出功率和能量转换效率。     

光纤气体激光光源研究进展及展望(Ⅱ):基于粒子数反转

粒子数反转和受激拉曼散射是实现光纤气体激光器输出的最常见的两种基本原理。与光纤气体拉曼激光光源不同,基于粒子数反转原理的光纤气体激光器是通过气体分子振转能级的本征吸收跃迁实现激光输出。由于绝大多数气体分子的振转能级对应的激射跃迁谱线都在中红外波段,这种激光器的输出波长基本都在中红外波段。简要分析了基于粒子数反转原理的光纤气体激光器在产生中红外波段激光方面的优势,重点回顾了其发展历史与研究现状,并对下一步的发展趋势进行了展望。     

Multilayer GaAs injection laser

Experimental data are presented for multijunction GaAs lasers made by vapor-phase epitaxial growth in the form ofp-n-p-n-p-nstructures. The overall thickness of the four inside layers was 5 microns for the multilayer material for which experimental data are given. The diodes made from this material exhibited current-controlled negative-resistance characteristics. The emitted output beams of the multilayer lasers were extremely narrow, with the beam diverging only 0.5 degree in the direction transverse to the junction planes. The corresponding near-field patterns for these lasers have, in addition to the expected bright laser regions, almost fifty lines spaced about 1 micron apart and almost equally bright. The current thresholds at 77°K for the multijunction lasers are three to four times higher than single-junction laser thresholds and the incremental output quantum efficiencies of these lasers were more than unity, 1.1.     

Experimental study of a generalized self-filtering unstableresonator applied to an XeCl laser

A diffraction-limited laser beam of 3.5 mJ with a pulse width of 11 ns and a brightness of 4.8×10¹³ W-cm^-2-Sr ^-1 has been obtained by applying a generalized self-filtering unstable resonator (SFUR) scheme to a short-pulse XeCl laser. In accordance with the theory, the generalized SFUR maintains the excellent properties of the SFUR, such as high transverse-mode discrimination, fast establishment of steady-state condition, and diffraction-limited output beam, but offers the possibility of having high magnification and higher mode volumes with shorter resonator lengths. It is possible to demonstrate that with the generalized SFUR, one can increase, by a factor more than two, the mode volume with respect to the confocal case by leaving the cavity length unaltered. These properties make the nonfocal SFUR particularly suitable for short-pulse excimer lasers     

Laterally coupled strained MQW ridge waveguide distributed-feedbacklaser diode fabricated by wet-dry hybrid etching process

The fabrication and the characteristics of the laterally coupled GaInAsP-InP quantum-well ridge waveguide distributed-feedback (DFB) lasers are presented. The electron beam (EB) lithography and the wet and dry hybrid etching technique have been used to fabricate the deep grating structures for the DFB lasers on and beside the sidewalls of the narrow ridge waveguide. The threshold current was 18.5 mA at 20°C, and the sidemode suppression ratios (SMSRs) were ensured to be more than 40 dB for as-cleaved devices with various cavity lengths. The continuous-wave output powers of over 15 mW/facet have been observed, while transverse and longitudinal modes have remained in single mode at this output level     

Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers

Dynamic behaviors of the semiconductor lasers have been investigated both theoretically and experimentally. A single-mode rate equation, which takes account of the lateral mode profile and the carrier density profile, has been solved numerically. Effects of the carrier and lateral mode confinement have been clarified. The lateral mode deformation in lasers without a built-in mode confinement structure greatly enhances the relaxation oscillations. In lasers whose stripe width is narrower thansim10 mum, the carrier diffusion is found to play an important role in suppressing the relaxation oscillations, especially for lasers without a lateral carrier confinement structure. On the other hand, the fraction of the spontaneous emission going into the lasing mode is significant for lasers with a lateral carrier confinement structure. The slow increase of the laser output at the transient is confirmed to be due to the carrier diffusion.     

High-power (AlGa)As strip-buried heterostructure lasers

The characteristics of index-guided strip-buried heterostructure lasers are described. The lasers are grown by a two-step process, consisting of the initial 5-layer planar growth by MOCVD, and after etching to define the strip buried wave guide, recovery by Al0.65Ga0.35As using LPE. The devices are highly uniform, having 20 mA thresholds, quantum efficiencies of 0.65, and T0of 163°C. The TE polarized emission was in the lowest order transverse mode and consisted of ∼ 6 longitudinal modes. CW output powers of 50 mW per facet were obtained from lasers with reduced output reflectivity, and pulsed powers of 95 mW per facet from uncoated lasers have been obtained. The far-field angular widths weresim 23degandsim 50degin, and perpendicular to the junction plane, respectively. The total optical conversion efficiency of the coated laser emitting 50 mW CW was 41.5 percent.     

Lateral and longitudinal mode discrimination in index-guidedcircular ring semiconductor lasers

We present the first analysis of the mode structure and thresholds of index-guided ring lasers, and on longitudinal mode discrimination of X-junction-coupled ring lasers. Submilliampere thresholds can be achieved with single-lateral-mode ring lasers having small refractive index steps. In addition, strong longitudinal mode discrimination can be obtained with ring lasers of different cavity lengths coupled via an X junction