Low-frequency noise in permeable base transistors

The predominant noise is1/fnoise and consists of two parts: a) Noise varying asImin{C}max{2}, generated mostly with conducting channel and predominating for normal values of the collector voltage VCE. b) Noise at low VCEand practically independent of VCE; it is generated chiefly in the space charge region around the base grating and gives collector1/fnoise atV_{CE} = 0. The turnover frequency of the first noise source lies at about 20 MHz forV_{CE} = 0.30V,V_{BE} = 0.20V. At sufficiently high frequencies the PBT shows thermal noise of the output conductanceg_{c0}at zero bias. Generation-recombination noise is observed at large VBEand low VCEand comes mostly from the space charge region around the base grating.     

Noise figure of UHF transistors as a function of frequency and bias conditions

It is shown that the observed values of the minimum noise figureF_{min}of UHF transistors in common base connection can be explained in terms of the device parameter(1-alpha_{dc}) r_{b'b}/R_{e0}and fαfor frequencies up to 1000 MHz. An interesting collector saturation effect is observed that gives a strong increase in UHF noise figure at high currents. Many features of the dependance ofF_{min}on operating conditions can be explained by this effect. The current dependence ofF_{min}for large values of |VCB| and high currents suggests a distribution in diffusion times through the base region. At intermediate frequencies, the noise figure increases with increasing collector bias |VCB| due to an increase inr_{b'b}, which in turn is caused by the dependence of the base width on |VCB|.     

The effect of collector capacity on the transient response of junction transistors

The effect of collector depletion layer capacity on the transient response of junction transistors to a current input is calculated for the case of a resistive load. Expressions are given for the small-signal rise-time of the common-base, emitter, and collector configurations and for the large-signal turn-on and decay times of the common-emitter and collector configurations. The analysis shows that the transient durations under most conditions of operation are approximately (1 + omega_{alpha}R_{L}C_{c}) times those which would be predicted for the short-circuit output approximation reported by Moll [1]. Experimental results are reported which exhibit an excellent agreement with the analysis over a wide range ofomega_{alpha}R_{L}C_{c}. An empirical examination has been made of the dependence of large-signal switching time on the range of operating point excursion. A satisfactory approximate representation of this dependence is provided by a first-order correction factor, which takes into account the functional dependence of ωαand Ccon collector voltage.     

Second breakdown of double epitaxial transistors

This paper deals with the second breakdown of transistors with epitaxial collector, epitaxial base, and diffused emitter. Transistors were fabricated with base width WBin the range of 2 to 18 µ and resistivity in the range of 0.1 to 10 ohm . cm. The optimum values of the resistivity and the thickness of these regions were calculated by computer techniques. The devices were mounted onto a TO-63 header and the base and the emitter leads were bonded onto the device ultrasonically. The electrical characteristics, including the frequency response ftand secondary breakdownS/Bcapability, were tested. For the measurement of second breakdown current IM, forward bias condition was used. It was found that for fixed collector and emitter parameters, IMwas controlled by the product of base resistivity ρBand base width WB. The value of IMwas found to increase withrho_{B}W_{B}. However, for a specified device characteristic, an optimum value ofrho_{B}W_{B}was found to exist. For transistors withV_{CEO} =150volts,f_{t}=20mHz andh_{FE}=20, the optimum value ofrho_{B}W_{B}was found to be 6 × 10^-4ohm . cm².     

Characteristics, structure, and performance of a diffused-base germanium oscillator transistor

The diffused-base transistor structure affords a degree of design flexibility not found in previous structures. This is true because it has a larger number of independently adjustable design parameters than the previous structures. Its flexibility has been exploited in an oscillator transistor for 200-mc service. Design analysis shows that low ohmic base resistance, low collector body resistance, and operation at about 0.3 of the collector breakdown voltage are desirable in the present application. The methods of Lee have been used in making this germaniump-n-pdiffused-base unit. Alloyed emitter and base electrodes are parallel stripes approximately 0.5-mil apart, each measuring 1 × 6 mils. The collector is about 4.5 × 8 mils. Typical parameters at Vc= -10 volts and 1E= 10 ma are: fα= 600 mc,r'_{b}= 35 ohms, and Cc= 1.0 mmf. Median 200-mc oscillator efficiency of 50 per cent is obtained at the design bias point of -20 volts, 10 ma; this exceeds the performance objective. The unit withstands 20,000-gaccelerations in any direction, an additional demand imposed by the specific application for which it was developed.     

Optimum low-level injection efficiency of silicon transistors with shallow arsenic emitters

The influence of As surface concentration CSEon the emitter efficiency βγand the temperature dependence of βγare reported. The theoretical model that is used to explain the variation of βγwith CSEis based upon the difference in the effective energy bandgaps in the emitter and base regionsDeltaE_{g}. Experimental measurements ofDeltaE_{g}versus CSEare presented. Measurements of βγversus CSEshow that the effective emitter doping densityQ_{E}/x_{eb}reaches a maximum value atC_{SE} cong 1.5 times 10^{20}atoms/cm³, corresponding to the threshold above whichDeltaE_{g} > 0. For the case of a constant active base doping/cm²QB, this also corresponds to an optimum in the emitter efficiency βγ. However, it is shown that in typical sequential diffusion processing of transistors, βγincreases monotonically with CSEbecauseQ_{B} = Q_{B}(C_{SE})decreases. In addition, for devices fabricated in this study,Deltabeta_{gamma}/DeltaC_{SE}atC_{SE}=2 times 10^{20}atoms/ cm³for As-diffused emitters (doped oxide) was ≈ 5 times greater than for ion-implanted-diffused As emitters, showing the superiority of implantation in controlling gain. Finally, transistors that were made withC_{SE} siml 1.4 times 10^{20}atoms/cm³(DeltaE_{g} = 0) showed βgamma(85°C)/ βγ(-15°C) ≤ 1.05.     

Three terminal measurements of current amplification factors of controlled rectifiers

By treating the Silicon Controlled Rectifier as a hook transistor and measuring its current amplification factor as a function of frequency, the small-signal low-frequency alphasalpha_{n0}andalpha_{p0}of the n-p-n and p-n-p transistor sections constituting the Controlled Rectifier can be separately determined, together with fnand fp, their respective cutoff frequencies. Repeating these measurements at a number of bias currents, coupled with a numerical integration, enables one to separate the component dc currents of the two transistor sections as well as their dc alphas αnand αP. Measurements indicate that switching from high to low impedance is controlled byalpha_{n0} + alpha_{p0} = 1and notalpha_{n} + alpha_{p} = 1as has hitherto been implied. There are good theoretical reasons for this which have led to a redefinition of the breakover conditions. These are shown to be given by infinite output admittance and not infinite current as has so far been thought to be the case.alpha_{n0}andalpha_{p0}were also measured and plotted as a function of voltage bias.     

The effect of distributed series resistance on the dark and illuminated current—Voltage characteristics of solar cells

Distributed series resistance effects in solar cells are analyzed and the correctness of representing these by a lumped parameter is discussed for any conditions of bias and illumination. In addition to a general mathematical methodology, analytical expressions are derived to simplify the estimation of series resistance effects on the dark and illuminatedJ-Vcharacteristics of the cell. The equivalent series resistance (rs) in the dark is found to decrease with current densityJfromr_{b} + r_{e}/3at smallJto (r_{e} r_{b})^{1/2}at very highJ, where reand rbare the emitter layer and base region resistances, respectively. For illuminated conditions rsdepends onJas well, being maximum near short-circuit and minimum near open-circuit; however, rsfurther depends on the photogenerated current JL: its short-circuit value increases with JLfromr_{b} + r_{e}/3tor_{b} + r_{e}/2and the open-circuit value decreases with JLfromr_{b} + r_{e}/3to(r_{e}r_{b})^{1/2}. The variability of rsis therefore related to the relative importance of rbandr_{e};r_{b}plays the role of attenuating this variability, a situation not well recognized previously. Previous theoretical and experimental work is critically reviewed throughout this paper.     

The photoionization cross sections of the Rg*2[3Σ+u] excimer states for Ne*2, Ar*2, and Kr*2

Based on the recently determined Rydberg series of the³Sigma+_{u}excimer states of Ne*2, Ar*2and Kr*2, the photoionization cross sections of these molecules are calculated using a single-channel quantum defect method. These cross sections are found to differ considerably from those of the asymptotic metastable atomic Rg*(ns^{3}P_{2}) states, but are in good agreement with recently reported experiments at isolated wavelengths. The implications of these results for VUV and XUV lasers are discussed.     

A laser augmented reaction: SF6+ SiH4→S*2+ SiF4+ HF + H2· retention of isotopic selectivity during detonation

A single unfocused pulse of a free running CO2laser, area ∼ 8 cm², initiates an explosive reaction between SF6and SiH4. This occurs at a minimum energy of 4 J [full width at half maximum (FWHM)sim 1.5 /mus] of which about one half is absorbed in an 8 cm long cell; total pressure 12 torr; 0.65 <p(SiH4)/p(SF6) < 1.8. The spectral and temporal distributions of the emitted chemiluminescence depend sensitively on the fuel to oxidizer ratio, and on the pulse energy; we investigated the range 4 → 20 J. The principal emission is due to S2(B^{3}Sigma-_{u} rightarrow X^{3}Sigma-_{g}). Transitionsupsilon' (0-4) rightarrow upsilon" (2-15)were recorded. In the³Sigma-_{u}state, vibrational temperatures range from 3000-13000 K. The luminosity peaks sharply at (SiH4)/(SF6) = 1.0 ± 0.05. On each side of the maximum of the emission versus composition curve [at (SiH4)/(SF6) ≈ 0.95 and 1.22, for a 12 J pulse] the residual SF6(0.2-0.5 percent of initial amount) is enriched in³⁴SF6; the observed fractionation factors at these two compositions are 8 ± 2. The separation between the two sharply peaked optimum compositions appears to increase with increasing pulse energy. Preliminary results with other fuels suggest that the concurrent absorption of CO2laser radiation by the fuel, as well as a highly exothermic reaction, are pre-requisite for fine tuning of composition, injected power, and total pressure for optimum isotope fractionation.     

Magnitude and dispersion of Kleinman forbidden nonlinear optical coefficients

Starting with a perturbation expansion for the Kleinman forbidden nonlinear optical coefficientd_{ijk^{F}}and for Miller'sDelta_{ijk^{F}}, and making several approximations, we arrive at a simple result for the ratio of forbidden to allowed mixing nonlinearities (omega_{1} + omega_{2} = omega_{3}), namelyDelta_{ijk^{F}}/Delta_{ijk^{A}} propto (omega_{3}^{2} + 2omega_{1}omega_{2}). For second-harmonic generation (SHG) this can be expressed asDelta_{ijk^{F}}/Delta_{ijk^{A}} simeq (omega/chi)(partialchi/partialomega), which clearly shows the close connection betweenDelta_{ijk^{F}}and the linear dispersion. These expressions are shown to give good agreement with literature experimental values, as well as for our measurements on TeO2for various input frequencies ω1and ω2(i.e.,omega_{3} = 1.88, 2.33, 2.82, 3.50, and 3.76 eV).     

Pulsed discharge initiated chemical lasers -- Part II: HF laser emission from NF3and N2F4systems

A transverse, multiple-arc pulsed discharge has produced laser emission in NF3and N2F4mixed with H2, CH4, C2H6, HCl, HBr, and natural gas.P_{10}, P_{21}, P_{32}, and P43HF transitions were observed. The peak powers measured ranged from ∼8.5 to 25 kW with typical pulsewidths ofsim0.3 mus.     

Effect of band shapes on carrier distribution at high temperature

This paper indicates both experimentally and graphically how the distribution of carriers changes above a critical temperature Tc, which is related to the density of states ρ in the band tails. Thus,kT_{c} = E_{0}, whererho = rho_{0} exp (DeltaE/E_{0}). The emission spectrum shifts with changing excitation (band filling) at lower temperatures (T < T_{c}) and stays at a constant value independent of excitation at higher temperatures (T > T_{c}). Experimental results of photoluminescence studies with GaAs crystals show that the quantity E0, obtained from the dependence of the peak energy upon the degree of excitation is the same as the quantitykT'_{c}, obtained from the dependence of the peak energy upon temperature. This is in agreements with the analysis. For lasing diodes, the threshold will increase steeply with increasing temperature above Tc, if the excited carriers are located mostly in the exponential states of the band tail.E_{0} = (10 sim 20)meV and Tc= (120 sim 250degK) are typical for crystals of heavily compensated GaAs.     

The area of safe operation of transistors for switching operation

A thermal feedback model is presented for the analytical definition of the ASO (Area of Safe Operation) for transistors in switching operations. This area is narrowed by the "second breakdown in p-n junction," and the approximate representation of the breakdown threshold is presented. This model consists of a forward and feedback energy flow with gains A and B, respectively.A = V_{CE} times M, B = K times theta times alpha_{R} times I_{e}. Therefore, the condition of the breakdown can be introduced as1 - AB = 0, whereMis the current multiplication factor, θ is transient thermal resistance,Kis a newly introduced current concentration factor, and αRis the temperature coefficient of Ie. Experimental results are also reported for a germanium alloy type transistor.     

Linear and nonlinear optical properties of AgGaS2, CuGaS2, and CuInS2, and theory of the wedge technique for the measurement of nonlinear coefficients

The refractive indices of the ternaryA^{I}B^{III}C_{2}^{VI}semiconductors AgGaS2, CuGaS2, and CuInS2have been measured over the entire range of transparency of these crystals. The optical nonlinear coefficients for second-harmonic generation have also been determined. Three-frequency collinear phase matching is analyzed in detail for AgGaS2. The birefringences of CuGaS2and CuInS2are not large enough to permit three-frequency phase matching within the transparent regions. A parametric oscillator threshold calculation for a pump wavelength 0.89 μ, which is within the range of the GaAs injection laser, indicates that AgGaS2is promising for this application. The upconversion efficiency in AgGaS2for sum mixing of the CO2laser (lambda = 10.5 mu) with the xenon ion laser (lambda = 0.597 mu) is also calculated. The result indicates that, depending upon system requirements and the availability of high optical quality material, AgGaS2can be comparable to ZnGeP2for upconversion. In Appendix II, we present a theory of the wedge technique for the measurement of nonlinear coefficients. This theory takes into account losses and assumes a Gaussian beam geometry. Furthermore, a discussion of units in nonlinear optics is given.     

Harmonic distortion in the junction field-effect transistor with field-dependent mobility

It has been found that a harmonic analysis of the usual power-law transfer characteristic of the JFET does not yield equations which accurately predict the third-harmonic distortion products for short-gate structures. However, if field-dependent mobility in the drain-source channel is taken into consideration in the equations for the drain current, a transfer characteristic is obtained of the form3Z_{D}(1-e^{-r})/ Gamma^{2}, where ZDis the normalized channel height and Γ is the field factor. Equations for the distortion products M2and M3, which are derived from this type of characteristic, accurately predict M2and M3for actual devices as a function of physical parameters. Lower limits on the values of M2and M3which can be achieved in a practical JFET are presented.     

Noise temperature in silicon in the hot electron region

The noise temperature as a function of the applied field has been measured on an epitaxial silicon layer at the frequencies 2 GHz and 4 GHz. It has been found that the experimental results are in good agreement with the theory given by Moll. It is shown that for noise calculations in silicon field-effect transistors with pronounced carrier velocity saturation the noise temperature Tnversus field E may be approximated byT_{n}/T_{0}= 1 + γ(E/E_{c})^{2}with T0= lattice temperature, Ec= saturation field, γ = const.     

4C1--Nonlinear effects in an NMR experiment

We have studied multiple-photon transition in a low-field nuclear magnetic resonance (NMR) experiment. It is well known that a saturation of the NMR occurs when using a sufficiently high alternating magnetic field which induces multiple-photons transitions. We show theoretically that these multiphoton transitions are accompanied by an harmonic generation. For an-photon transition, this generation occurs mostly on thenth and (n pm 1)th harmonic. For an irradiating field2H_{1} cos omegat of pulsation ω such thatnomega= gamma H_{0}=omega_{0}where H0is the steady field and θ is the angle between H0and H1the amplitudesSmin{n}max{n}andSmin{n}max{n+1}of these components are given bySmin{n}max{n} = f_{n}(theta) (H_{1})^{n},Smin{n}max{n+1} = cos theta f_{n}(theta) (H_{1})^{n+1}. We have verified these equations in a low-field NMR experiment (H_{0} = 0.7Gs/s), polarizing first a flowing liquid in a high magnetic field. The liquid then flows in a modified Bloch spectrometer. The receiving coil is still perpendicular to the steady field but it is possible to adjust the angle θ between the axis of the emission coils (H1field) and the steady-field H0. Using a synchronous detection at the output of the receiving coil on the pulsation(n - 1) omega, nomega, or(n + 1) omega, we have directly detected multiphoton transistions. The above equations have been verified forn = 2ton = 5. There are slight discrepancies at high excitation which may be explained taking into account a large saturation.     

Near single-line operation of a free-burning CS2/O2/N2O flame laser with a nondispersive optical cavity

The CS2/O2/N2O flame laser has been operated for the first time under conditions in which the spectral output is nearly single line. This transition is theP_{10-9}(17) of CO at 5.4265 μm, the same transition which was observed to oscillate in single-line fashion by Hirose et al. in an electrically initiated CO chemical laser. It is suggested that the unique behavior of this line may be due to its close proximity to aPbranch transition in an adjacent band, namely theP_{9-8}(23) line, such that the gain profiles of the two lines overlap. Calculations suggest that at the conditions of these experiments, the separation of the line centers for this pair is about 0.3 Å or less. TheP_{10-9}(17) transition was also found to be totally absent under certain conditions of high multiline power, particulary at low O2and N2O flows. This may be due to absorption by a high-bandRbranch transition at 5.4266 μm, namely theR_{15-16}(32) line.     

Efficient V-V energy transfer in a multiphoton excited mixture of SF6and CF4

Spectral and temporal measurements of infrared fluorescence (IRF) in SF6, CF4, and mixtures of SF6and CF4gases excited by a pulsed CO2laser are reported. Using the 944.2 cm^-1[P(20)] laser line for excitation and measuring the IRF spectra between 700 and 1500 cm^-1, a strong red shifted IRF peak of the ν3mode in pure SF6was found. No IRF was observed under these conditions in pure CF4. In a 13:10 mixture of SF6and CF4, two strong IRF peaks of the ν3modes, shifted to the red relative to the room-temperature fundamentals at 948 cm^-1and 1283.2 cm^-1, were observed. The peaks are almost equal in height and since both molecules have almost the same ν3band intensity, the present result suggests that efficient intermolecularV-Venergy transfer occurs from excited SF6to cold CF4molecules. The temporal behavior of the IRF signals under high excitation (langlenrangle approx 6) in pure SF6exhibits two relaxation times, one of bulk cooling withtau_{1} approx 1ms and the other of aV-Tnature withPtau_{2} approx 20 mus . torr. In the mixture, an additional relaxation of the intermolecularV-Venergy transfer process is observed withPtau_{3} approx 10 mus . torr. The red shift dependence of the IRF peaks on the degree of excitation was also measured and used to examine population distributions, specific IRF transitions, and anharmonicity parameters.