Effect of Polymer Inclusion in Preparation of Thick LZO Buffer Layers for YBCO Coated Conductors

In this work,water-based precursor solutions suitable for dip-coating of thick La₂Zr₂O₇（LZO） buffer layers for coated conductors on Ni-5%W substrates with an inclusion of polymeric polyvinyl pyrrolidone were developed.The effect of varying percentage of the polymer addition on the preparation of the deposited films with maximum crack-free thickness was investigated.This novel water-based chemical solution deposition method involving polymers in two different chelate-chemistry compositions revealed the possibility to grow single,crack-free layers with thicknesses ranging from 140 to 280 nm,with good crystallinity and epitaxial growth.The effect of increasing polymer concentrations on the morphology and the structure of the films was studied.The appropriate buffer layer action of the films in preventing Ni diffusion was studied by X-ray photoelectron spectroscopy.     

Rapid Deposition of Buffer Layers for YBCO Coated Conductors on Biaxially-Textured Ni Tapes

Epitaxial growth of CeO₂ buffer layers on biaxially textured (001)Ni tapes was studied using pulsed laser deposition. Relationships between microstructure and deposition parameters were systematically studied in order to develop reliable long tape coating processes. It was found that orientation and texture of CeO₂ buffer layers were sensitive to deposition parameters. X-ray diffraction analyses showed that CeO₂ buffer layers had pure (001) orientation at 860 °C. Under optimized deposition conditions, highly (001) oriented CeO₂ buffer layers have been achieved at a high deposition rate of 1.5 nm/s in-plane texture and out-plane texture of CeO₂ buffer layers were 4.25 degrees and 5.85 degrees, respectively.     

CSD制备涂层导体缓冲层的技术进展

化学溶液沉积(CSD)技术在制备高温超导涂层导体方面具有易操作和低成本的优点.简述了CSD技术的基本原理以及在不同结构缓冲层制备方面的应用,并展望了涂层导体缓冲层技术的发展趋势.     

Epitaxial Growth of CeO2/YSZ/CeO2 Buffer Layers on Textured Ni Substrates for YBCO Conductors

CeO₂/YSZ/CeO₂ buffer layers were deposited on textured Ni substrates by in situ pulsed laser deposition. The out-of-plane texture and in-plane texture of the buffer layers were characterized by X-ray diffraction ω-scans and ϕ-scans. Using this CeO₂/YSZ/CeO₂ architecture as the buffer layers, high quality YBCO films with a zero-resistance T _c about 90 K and a self-field critical current densities J _c above 10⁶ A/cm² at 77 K can be obtained on Ni substrates.     

Epitaxial Growth of CeO<Subscript>2</Subscript>/YSZ/CeO<Subscript>2</Subscript> Buffer Layers on Textured Ni Substrates for YBCO Conductors

CeO₂/YSZ/CeO₂ buffer layers were deposited on textured Ni substrates byin situ pulsed laser deposition. The out-of-plane texture and in-plane texture of the buffer layers were characterized by X-ray diffraction ω-scans and ϕ-scans. Using this CeO₂/YSZ/CeO₂ architecture as the buffer layers, high quality YBCO films with a zero-resistanceT _c about 90 K and a self-field critical current densitiesJ _c above 10⁶ A/cm² at 77 K can be obtained on Ni substrates.     

Epitaxial Film Growth of Tl0.78Bi0.22Sr1.6Ba0.4Ca2Cu3O9 on Rolling Assisted Biaxially Textured Nickel Substrates with YSZ And CeO2 Buffer Layers

Epitaxial film growth of Tl_0.78Bi_0.22Sr_1.6Ba_0.4Ca₂Cu₃O₉ ((Tl,Bi)-1223) on rolling assisted biaxially textured substrates with YSZ and CeO₂ buffer layers (RABiTS) has been successfully demonstrated by laser ablation and post-deposition annealing in flowing argon. X-ray diffraction (XRD) -2 spectra showed that the films consisted mainly of c-axis aligned 1223 phase with some intergrown 1212 phase, while XRD -scans of (102) pole figure revealed that the films are also a- and b-axes aligned, with an epitaxy of the «100» of (Tl,Bi)-1223 film on the «110» of the top YSZ buffer layer. Four-terminal electrical transport measurements showed that the zero-resistance transition temperature (T_c) was in the range of 106 - 110 K, and the critical current density (J_c) at 77 K and zero field was about 10⁵ A/cm² for the entire film width (3 mm) of a longer film (14 mm) which was processed differently from the shorter films (7 mm). For a shorter film (7 mm) that showed better ab-in-plane alignment, the magnetization J_c, at 77 K and extrapolated to zero field, calculated from Bean's model using the full film width (3.5 mm) as the appropriate lateral dimension, was 2 × 10⁵ A/cm².     

化学溶液沉积法制备涂层导体阻隔层用钨盐前驱体的制备和筛选

制备了[(n-C4H9)4N]2[W6O19]、过氧钨酸衍生物(APTA)和[(n-CBH17)2NH2]2[W4O13]3种有机钨盐,研究了这几种盐在不同溶剂中的溶解性、溶液的稳定性以及在钇稳定氧化锆(YSZ)基片上的润湿性.研究发现:[(n-C8H17)2NH2]2[W4O13]在丙酸中具有溶解性良好、溶液稳定性高及润湿性好的特点,而且与其它金属盐前驱体在丙酸中的配伍性好.因此,选择[(n-C8H17)2NH2]2[W4O13]作为钨盐的前驱体,使我们尝试用化学溶液沉积法制备涂层导体的钨基双钙钛矿薄膜阻隔层成为可能.     

Influence of Annealing Atmosphere on Epitaxial Growth Process of the CeO2 Buffer Layer for Coated Conductors

The epitaxial growth of the buffer layer on a textured metal substrate has a significant influence on the performance of coated conductors, which provides the potential to support a high current for electric utility and high magnetic field applications at 77 K. In this paper, we have fabricated the CeO₂ buffer layer on YSZ (yttria-stabilized zirconia) (00l) single crystal substrates by the chemical solution deposition (CSD) method in different annealing atmospheres. The results show that both the thermal decomposition behavior of the precursor solution and the annealing atmosphere have an important effect on the epitaxial growth process of the CeO₂ buffer layer. The large oxygen partial pressure in annealing atmosphere is to the disadvantage of the epitaxial growth of CeO₂ (00l) crystal face with high energy. Moreover, the epitaxial growth of the CeO₂ (00l) crystal plane goes against a decrease in the surface roughness of the CeO₂ film. Therefore, it can be considered that the orientation growth of the CeO₂ buffer layer and its surface morphology evolution may be related to the thermal decomposition behavior of precursor solution and the change of oxygen vacancies concentration.     

Ti6Al4V表面HAF/YSZ梯度复合涂层的制备和性能

采用射频磁控溅射技术在Ti6Al4V基体上制备含氟羟基磷灰石(HAF)梯度复合涂层,对涂层的氟含量、物相组成及形貌进行了表征,并分析了梯度复合涂层在模拟人体条件下的生物活性和稳定性。结果表明:复合涂层中的氟呈梯度分布,n(Ca)/n(P)随着涂层中氟含量的增加逐渐减小。HAF/YSZ(Y_2O_3稳定的ZrO_2,简称YSZ)复合涂层在SBF环境下生成的新物质为碳酸类骨磷灰石,氟促进磷灰石相的发育,氟含量呈梯度分布能有效提高涂层的抗体液溶解能力和与基体间的结合性能;HAF/YSZ梯度复合涂层比无氟羟基磷灰石及氟含量单一的涂层具有更好的生物活性和稳定性。     

负载纳米TiO2织物AFM表征及其光催化性能的研究

在室温条件下采用射频磁控溅射方法,在纯棉机织物和涤纶针织物表面负载TiO2功能纳米结构层.利用原子力显微镜(AFM)对2种负载织物的表面形貌和结构进行了表征,并对2种负载TiO2织物的光催化性能进行了对比分析.实验表明,负载纳米TiO2的织物具有良好的光催化性能和一定的耐洗性,经30次洗涤后,其光催化活性仍保持在很高的水平;在相同的溅射工艺条件下,负载纳米TiO2纯棉织物的光催化性能优于负载纳米TiO2的涤纶织物.     

磁控溅射法制备HAF/YSZ梯度复合涂层及生物性能研究

采用射频磁控溅射技术在Ti6Al4V基体上成功制备了含氟羟基磷灰石梯度复合涂层(HAF/YSZ)。利用X射线光电子能谱(XPS)、电子探针(EDX)、扫描电镜(SEM)等对涂层的成分分布、形貌、界面结合进行表征。通过模拟体液(SBF)实验,分析和评价了HAF/YSZ涂层在模拟人体条件下的生物性能。结果表明,所制备涂层表面粗糙,呈多孔岛状结构,有利于新生骨组织的生长;涂层与基体结合紧密,各层间相互扩散,整体一致性较好;经模拟体液浸泡后,涂层表面有新生物质沉积,表现出较好的生物活性及稳定性;梯度复合涂层较氟含量单一的氟羟基磷灰石涂层具有更好的抗体液溶解能力及稳定性。     

Reel-to-Reel Deposition of Reactively Sputtered LaZrO Buffer Layers on Textured NiW Tapes for YBaCuO Coated Conductors

A biaxially textured buffer layer of LaZrO (LZO) was continuously grown on Ni-5-at%W (NiW) tapes using a reel-to-reel DC reactive sputtering technique. X-ray diffraction measurements revealed that the LZO layer deposited at water vapor partial pressures of 2.5×10^?2 Pa and the temperature of 800?°C are biaxially textured with the misorientation as low as 4.7°. AFM measurements show that the layer??s surfaces are homogeneous and flat with the RMS value less than 5 nm. YBa₂Cu₃O_7??? (YBCO) superconducting films grown on the single LZO buffer layer exhibited the critical temperature (T _c ) of 89 K with a narrow transition width less than 2 K. For comparison, another Ce₂Y₂O₇ (CYO) layer grown using DC reactive sputtering was added on the top of the LZO layer. The architecture YBCO/CYO/LZO/NiW exhibited better texture and higher T _c such as 90 K with ??T _c of 1.5 K, demonstrating the availability of a novel simplified buffer layer stack of CYO/LZO for superconducting coated conductors.     

平面射频磁控溅射法制备YSZ薄膜及性能

研究了应用射频磁控溅射法在不同基板上制备ＹＳＺ薄膜和工艺条件对其微观结构的影响。结果表明,在清洁的基板上制备的ＹＳＺ 薄膜经６００ ℃以上热处理后,薄膜表面致密均匀,无裂纹,薄膜与基板的结合紧密。薄膜具有较高的电导率,完全可以作为固体电解质使用。     

Pulsed Laser Deposition of a Single Buffer Layer of LaMnO3 for YBa2Cu3O7−x Coated Conductors

A single buffer layer of LaMnO₃ for YBa₂Cu₃O_7−x (YBCO) coated conductors has been grown on textured Ni substrate using pulsed laser deposition (PLD). Detailed X-ray diffraction (XRD) studies showed that the LaMnO₃ single buffer layer had a good out-of-plane and in-plane texture with a full width at half maximum of 5.2° and 9.9°, respectively. The scanning electron microscopy image revealed a dense, smooth, and uniform surface. The single LaMnO₃ buffer layer has been proved to be a very effective diffusion barrier layer against Ni and oxygen diffusion and a good template for subsequent growing high critical current density YBa₂Cu₃O_7−x films. PACS: 74.78.Fk, 74.78.Bz, 74.72.Bk, 81.15.Fg.     

化学溶液方法制备涂层导体Ce_xLa_(1-x)O_2薄膜的研究

获得多功能单一过渡层是简化涂层导体多层结构的主要课题之一. 采用化学溶液方法制备La掺杂CeO₂过渡层,研究La掺杂量对CeO₂薄膜表面形貌和双轴取向生长的影响. 结果表明La掺杂量为10mol％的薄膜表面平整致密,且能保持锐利的双轴织构. 通过多次涂敷工艺,获得具有120nm厚的Ce_0.9La_0.1O₂过渡层. 采用脉冲激光沉积方法在Ce_0.9La_0.1O₂/NiW结构模板层上沉积了YBCO超导薄膜,其起始临界转变温度达到90.5K. 这表明采用化学溶液方法制备Ce_0.9La_0.1O₂薄膜是一种有前景的简化涂层导体多层结构的方法.     

氧化银薄膜的微结构对其反射率和透射率的影响

保持150℃的衬底温度不变,通过调节氧氩比(OFR=[O2]/[Ar]),利用直流反应磁控溅射技术在玻璃衬底上制备了一系列氧化银薄膜。利用X射线衍射谱、扫描电子显微镜和分光光度计重点研究了薄膜的微结构对其反射率和透射率的影响。研究表明随着OFR的升高,氧化银薄膜呈现了从Ag+Ag2O多晶结构到Ag2O多晶结构的演变。薄膜的表面相应地呈现了从疏松的多孔结构到类金字塔结构的演变。较高的Ag2O含量和致密的表面形貌有利于薄膜可见和红外区的透光性,而较高的银含量和疏松的多孔结构则造成对光的强烈吸收,急剧地降低了薄膜的透射率和反射率。特别是在OFR为0.5条件下成功制备了具有(111)择优取向的Ag2O多晶薄膜,有效地将氧化银热分解的临界温度降低到200℃左右。     

Characterization of zirconium oxynitride films obtained by radio frequency magnetron reactive sputtering

Thin ZrN_xO_y films are deposited on Si (100) substrates by radio frequency (RF) reactive magnetron sputtering of a zirconium target in an argon-oxygen-nitrogen mixture. The Φ_N2/Φ_{(Ar + N2 + O2)} ratio was varied in the range 2.5%-100% while the oxygen flux was kept constant. The films were characterized by combining several techniques: X-ray photoelectron spectroscopy, X-ray diffraction and Secondary Ion Mass Spectroscopy. The relationship between structural and compositional properties and the sputtering parameters was investigated. Increasing nitrogen partial pressure in the gas mixture, a chemical and structural evolution happens. At lowest nitrogen flux, ZrN cubic phase is formed with a very small amount of amorphous zirconium oxynitride. At highest nitrogen flux, only crystalline ZrON phases were found. For the films obtained between these two extremes, a co-presence of ZrN and ZrON can be detected. In particular, chemical analysis revealed the co-presence of ZrO₂, ZrN, ZrON and N-rich zirconium nitride which is correlated with the Φ_N2/Φ_{(Ar + N2 + O2)} values. A zirconium nitride crystal structure with metal vacancies model has been considered in order to explain the different chemical environment detected by X-ray photoelectron spectroscopy measurements. The metal vacancies are a consequence of the deposition rate decreasing due to the target poisoning. It's evident that the growth process is strongly influenced by the zirconium atoms flux. This parameter can explain the structural evolution.     

聚合物基柔性导电复合材料的制备和研究进展

柔性可穿戴电子器件的研制是未来科技发展的方向之一,柔性导电材料是可穿戴电子器件的重要支撑材料。由于聚合物具有优异的柔性,由聚合物基导电复合材料制备柔性导体是一种重要的途径和方式。文中从制备和表征方法方面归纳了聚合物基柔性导电复合材料的研究进展,重点阐述了实现柔性导体的关键因素,即聚合物优异高弹性的保持和可拉伸的稳定的导电网络的实现,详细介绍了简易地利用高弹性基体和纳米填料的直接共混法和目前应用较多的结构可拉伸导体的设计与制备,并总结了目前研究中存在的问题。     

HfO2薄膜的制备与光学性能

采用射频磁控反应溅射法，以高纯热压HfO2陶瓷为靶材，在Si衬底上成功制备出HfO2薄膜。系统研究了工艺参数对薄膜沉积速率的影响规律，并对薄膜的光学性能进行了研究。结果表明，射频功率对薄膜沉积速率的影响最为明显，O2／Ar流量比和衬底温度对沉积速率的作用不明显，所制备薄膜的折射率较高在近红外波段趋于1．95，在500-1650nm波段范围内薄膜几乎无吸收，透过率较高。     

射频磁控反应溅射制备ZnO/AlN双层膜的结构和性能

采用射频磁控反应溅射在Si（100）衬底上制备了ZnO/AlN双层膜。使用X射线衍射仪、原子力显微镜（AFM）、LCR测试仪及荧光分光光度计等仪器对样品进行了结构、表面形貌、导电性及荧光光谱的测试,并与相同工艺下制备的ZnO单层薄膜进行了对比研究。结果表明,ZnO/AlN双层膜的c轴择优取向性优于单层ZnO薄膜,薄膜应力更小,且为压应力,晶粒尺寸大于单层膜,表面粗糙度较小,并且其电阻率更低。荧光光谱显示,ZnO/AlN双层膜的结晶质量更好。