Interfacial Passivation of the p‐Doped Hole‐Transporting Layer Using General Insulating Polymers for High‐Performance Inverted Perovskite Solar Cells

Organic–inorganic lead halide perovskite solar cells (PVSCs), as a competing technology with traditional inorganic solar cells, have now realized a high power conversion efficiency (PCE) of 22.1%. In PVSCs, interfacial carrier recombination is one of the dominant energy‐loss mechanisms, which also results in the simultaneous loss of potential efficiency. In this work, for planar inverted PVSCs, the carrier recombination is dominated by the dopant concentration in the p‐doped hole transport layers (HTLs), since the F4‐TCNQ dopant induces more charge traps and electronic transmission channels, thus leading to a decrease in open‐circuit voltages (V_OC). This issue is efficiently overcome by inserting a thin insulating polymer layer (poly(methyl methacrylate) or polystyrene) as a passivation layer with an appropriate thickness, which allows for increases in the V_OC without significantly sacrificing the fill factor. It is believed that the passivation layer attributes to the passivation of interfacial recombination and the suppression of current leakage at the perovskite/HTL interface. By manipulating this interfacial passivation technique, a high PCE of 20.3% is achieved without hysteresis. Consequently, this versatile interfacial passivation methodology is highly useful for further improving the performance of planar inverted PVSCs.     

Nonradiative Recombination in Perovskite Solar Cells: The Role of Interfaces

Perovskite solar cells combine high carrier mobilities with long carrier lifetimes and high radiative efficiencies. Despite this, full devices suffer from significant nonradiative recombination losses, limiting their V_OC to values well below the Shockley–Queisser limit. Here, recent advances in understanding nonradiative recombination in perovskite solar cells from picoseconds to steady state are presented, with an emphasis on the interfaces between the perovskite absorber and the charge transport layers. Quantification of the quasi‐Fermi level splitting in perovskite films with and without attached transport layers allows to identify the origin of nonradiative recombination, and to explain the V_OC of operational devices. These measurements prove that in state‐of‐the‐art solar cells, nonradiative recombination at the interfaces between the perovskite and the transport layers is more important than processes in the bulk or at grain boundaries. Optical pump‐probe techniques give complementary access to the interfacial recombination pathways and provide quantitative information on transfer rates and recombination velocities. Promising optimization strategies are also highlighted, in particular in view of the role of energy level alignment and the importance of surface passivation. Recent record perovskite solar cells with low nonradiative losses are presented where interfacial recombination is effectively overcome—paving the way to the thermodynamic efficiency limit.     

Sensitive and Stable Tin–Lead Hybrid Perovskite Photodetectors Enabled by Double‐Sided Surface Passivation for Infrared Upconversion Detection

Tin(Sn)‐based perovskite is currently considered one of the most promising materials due to extending the absorption spectrum and reducing the use of lead (Pb). However, Sn²⁺ is easily oxidized to Sn⁴⁺ in atmosphere, causing more defects and degradation of perovskite materials. Herein, double‐sided interface engineering is proposed, that is, Sn‐Pb perovskite films are sandwiched between the phenethylammonium iodide (PEAI) in both the bottom and top sides. The larger organic cations of PEA+ are arranged into a perovskite surface lattice to form a 2D capping layer, which can effectively prevent the water and oxygen to destroy bulk perovskite. Meanwhile, the PEA+ can also passivate defects of iodide anions at the bottom of perovskite films, which is always present but rarely considered previously. Compared to one sided passivation, Sn‐Pb hybrid perovskite photodetectors contribute a significant enhancement of performance and stability, yielding a broadband response of 300–1050 nm, a low dark current density of 1.25 × 10^–3 mA cm^–2 at –0.1 V, fast response speed of 35 ns, and stability beyond 240 h. Furthermore, the Sn‐Pb broadband photodetectors are integrated in an infrared up‐conversion system, converting near‐infrared light into visible light. It is believed that a double‐sided passivation method can provide new strategies to achieving high‐performance perovskite photodetectors.     

Amino‐Acid‐Induced Preferential Orientation of Perovskite Crystals for Enhancing Interfacial Charge Transfer and Photovoltaic Performance

Interfacial engineering of perovskite solar cells (PSCs) is attracting intensive attention owing to the charge transfer efficiency at an interface, which greatly influences the photovoltaic performance. This study demonstrates the modification of a TiO₂ electron‐transporting layer with various amino acids, which affects charge transfer efficiency at the TiO₂/CH₃NH₃PbI₃ interface in PSC, among which the l ‐alanine‐modified cell exhibits the best power conversion efficiency with 30% enhancement. This study also shows that the (110) plane of perovskite crystallites tends to align in the direction perpendicular to the amino‐acid‐modified TiO₂ as observed in grazing‐incidence wide‐angle X‐ray scattering of thin CH₃NH₃PbI₃ perovskite film. Electrochemical impedance spectroscopy reveals less charge transfer resistance at the TiO₂/CH₃NH₃PbI₃ interface after being modified with amino acids, which is also supported by the lower intensity of steady‐state photoluminescence (PL) and the reduced PL lifetime of perovskite. In addition, based on the PL measurement with excitation from different side of the sample, amino‐acid‐modified samples show less surface trapping effect compared to the sample without modification, which may also facilitate charge transfer efficiency at the interface. The results suggest that appropriate orientation of perovskite crystallites at the interface and trap‐passivation are the niche for better photovoltaic performance.     

Conjugated Polyelectrolytes as Multifunctional Passivating and Hole‐Transporting Layers for Efficient Perovskite Light‐Emitting Diodes

Metal halide perovskites (MHPs) have attracted significant attention as light‐emitting materials owing to their high color purities and tunabilities. A key issue in perovskite light‐emitting diodes (PeLEDs) is the fabrication of an optimal charge transport layer (CTL), which has desirable energy levels for efficient charge injection while blocking opposite charges and enabling perovskite layer growth with reduced interfacial defects. Herein, two poly(fluorene‐phenylene)‐based anionic conjugated polyelectrolytes (CPEs) with different counterions (K⁺ and tetramethylammonium (TMA⁺)) are presented as multifunctional passivating and hole‐transporting layers (HTLs). The crystal growth of MHPs grown on different HTLs is investigated through X‐ray photoelectron spectroscopy, X‐ray diffraction, and density functional theory calculation. The CPE bearing the TMA⁺ counterions remarkably improves the growth of perovskites with suppressed interfacial defects, leading to significantly enhanced emission properties and device performance. The luminescent properties are further enhanced via aging and electrical stress application with effective rearrangement of the counterions on the interfacial defects in the perovskites. Finally, efficient formamidinium lead tribromide‐based quasi‐2D PeLEDs with an external quantum efficiency of 10.2% are fabricated. Using CPEs with varying counterions as a CTL can serve as an effective method for controlling the interfacial defects and improving perovskite‐based optoelectronic device properties.     

Polymer‐Passivated Inorganic Cesium Lead Mixed‐Halide Perovskites for Stable and Efficient Solar Cells with High Open‐Circuit Voltage over 1.3 V

Cesium‐based trihalide perovskites have been demonstrated as promising light absorbers for photovoltaic applications due to their superb composition stability. However, the large energy losses (E_loss) observed in inorganic perovskite solar cells has become a major hindrance impairing the ultimate efficiency. Here, an effective and reproducible method of modifying the interface between a CsPbI₂Br absorber and polythiophene hole‐acceptor to minimize the E_loss is reported. It is demonstrated that polythiophene, deposited on the top of CsPbI₂Br, can significantly reduce electron‐hole recombination within the perovskite, which is due to the electronic passivation of surface defect states. In addition, the interfacial properties are improved by a simple annealing process, leading to significantly reduced energy disorder in polythiophene and enhanced hole‐injection into the hole‐acceptor. Consequently, one of the highest power conversion efficiency (PCE) of 12.02% from a reverse scan in inorganic mixed‐halide perovskite solar cells is obtained. Modifying the perovskite films with annealing polythiophene enables an open‐circuit voltage (V_OC) of up to 1.32 V and E_loss of down to 0.5 eV, which both are the optimal values reported among cesium‐lead mixed‐halide perovskite solar cells to date. This method provides a new route to further improve the efficiency of perovskite solar cells by minimizing the E_loss.     

In Situ Back‐Contact Passivation Improves Photovoltage and Fill Factor in Perovskite Solar Cells

Organic–inorganic hybrid perovskite solar cells (PSCs) have seen a rapid rise in power conversion efficiencies in recent years; however, they still suffer from interfacial recombination and charge extraction losses at interfaces between the perovskite absorber and the charge–transport layers. Here, in situ back‐contact passivation (BCP) that reduces interfacial and extraction losses between the perovskite absorber and the hole transport layer (HTL) is reported. A thin layer of nondoped semiconducting polymer at the perovskite/HTL interface is introduced and it is shown that the use of the semiconductor polymer permits—in contrast with previously studied insulator‐based passivants—the use of a relatively thick passivating layer. It is shown that a flat‐band alignment between the perovskite and polymer passivation layers achieves a high photovoltage and fill factor: the resultant BCP enables a photovoltage of 1.15 V and a fill factor of 83% in 1.53 eV bandgap PSCs, leading to an efficiency of 21.6% in planar solar cells.     

Hybrid PbS Quantum‐Dot‐in‐Perovskite for High‐Efficiency Perovskite Solar Cell

In this study, a facile and effective approach to synthesize high‐quality perovskite‐quantum dots (QDs) hybrid film is demonstrated, which dramatically improves the photovoltaic performance of a perovskite solar cell (PSC). Adding PbS QDs into CH₃NH₃PbI₃ (MAPbI₃) precursor to form a QD‐in‐perovskite structure is found to be beneficial for the crystallization of perovskite, revealed by enlarged grain size, reduced fragmentized grains, enhanced characteristic peak intensity, and large percentage of (220) plane in X‐ray diffraction patterns. The hybrid film also shows higher carrier mobility, as evidenced by Hall Effect measurement. By taking all these advantages, the PSC based on MAPbI₃‐PbS hybrid film leads to an improvement in power conversion efficiency by 14% compared to that based on pure perovskite, primarily ascribed to higher current density and fill factor (FF). Ultimately, an efficiency reaching up to 18.6% and a FF of over ≈0.77 are achieved based on the PSC with hybrid film. Such a simple hybridizing technique opens up a promising method to improve the performance of PSCs, and has strong potential to be applied to prepare other hybrid composite materials.     

Intensive Exposure of Functional Rings of a Polymeric Hole‐Transporting Material Enables Efficient Perovskite Solar Cells

A variety of dopant‐free hole‐transporting materials (HTMs) is effectively applied in perovskite solar cells (PSCs); however, HTMs with the additional function of HTM/perovskite interfacial optimization that is crucial to their photovoltaic performance are really limited. In this work, the design of an HTM bearing an intensive exposure of its functional aromatic rings to perovskite layer via side‐chain engineering is attempted. With an edge‐on orientation and a short distance to perovskite, this HTM was expected to display an excellent ability to extract holes from and passivate defects in the perovskite layer. To demonstrate this strategy, an alternating copolymer was constructed with a 2,5‐di‐2‐ethylhexyloxy‐1,4‐phenylene unit and a bithiophene unit, and the PSC based on this polymer showed an ultrahigh short‐circuit current density of 25.50 mA cm^?2, which was the highest so far presented by dopant‐free organic HTMs. A comparable power conversion efficiency of 19.68% (certified: 19.5%) to that of a control 2,2′,7,7′‐tetrakis(N,N‐di‐p‐methoxyphenylamine)‐9,9′‐spirobifluorene (spiro‐OMeTAD) device (19.81%) was thus obtained, which is the highest value ever reported for mesoporous PSCs based on dopant‐free polymeric HTMs.     

Highly Efficient p‐i‐n Perovskite Solar Cells Utilizing Novel Low‐Temperature Solution‐Processed Hole Transport Materials with Linear π‐Conjugated Structure

Alternative low‐temperature solution‐processed hole‐transporting materials (HTMs) without dopant are critical for highly efficient perovskite solar cells (PSCs). Here, two novel small molecule HTMs with linear π‐conjugated structure, 4,4′‐bis(4‐(di‐p‐toyl)aminostyryl)biphenyl (TPASBP) and 1,4′‐bis(4‐(di‐p‐toyl)aminostyryl)benzene (TPASB), are applied as hole‐transporting layer (HTL) by low‐temperature (sub‐100 °C) solution‐processed method in p‐i‐n PSCs. Compared with standard poly(3,4‐ethylenedioxythiophene): poly(styrenesulfonic acid) (PEDOT:PSS) HTL, both TPASBP and TPASB HTLs can promote the growth of perovskite (CH₃NH₃PbI₃) film consisting of large grains and less grain boundaries. Furthermore, the hole extraction at HTL/CH₃NH₃PbI₃ interface and the hole transport in HTL are also more efficient under the conditions of using TPASBP or TPASB as HTL. Hence, the photovoltaic performance of the PSCs is dramatically enhanced, leading to the high efficiencies of 17.4% and 17.6% for the PSCs using TPASBP and TPASB as HTL, respectively, which are ≈40% higher than that of the standard PSC using PEDOT:PSS HTL.     

Slow‐Photon‐Effect‐Induced Photoelectrical‐Conversion Efficiency Enhancement for Carbon‐Quantum‐Dot‐Sensitized Inorganic CsPbBr3 Inverse Opal Perovskite Solar Cells

All‐inorganic cesium lead halide perovskite is suggested as a promising candidate for perovskite solar cells due to its prominent thermal stability and comparable light absorption ability. Designing textured perovskite films rather than using planar‐architectural perovskites can indeed optimize the optical and photoelectrical conversion performance of perovskite photovoltaics. Herein, for the first time, this study demonstrates a rational strategy for fabricating carbon quantum dot (CQD‐) sensitized all‐inorganic CsPbBr₃ perovskite inverse opal (IO) films via a template‐assisted, spin‐coating method. CsPbBr₃ IO introduces slow‐photon effect from tunable photonic band gaps, displaying novel optical response property visible to naked eyes, while CQD inlaid among the IO frameworks not only broadens the light absorption range but also improves the charge transfer process. Applied in the perovskite solar cells, compared with planar CsPbBr₃, slow‐photon effect of CsPbBr₃ IO greatly enhances the light utilization, while CQD effectively facilitates the electron–hole extraction and injection process, prolongs the carrier lifetime, jointly contributing to a double‐boosted power conversion efficiency (PCE) of 8.29% and an increased incident photon‐to‐electron conversion efficiency of up to 76.9%. The present strategy on CsPbBr₃ IO to enhance perovskite PCE can be extended to rationally design other novel optoelectronic devices.     

All‐Solution‐Processed Pure Formamidinium‐Based Perovskite Light‐Emitting Diodes

All‐solution‐processed pure formamidinium‐based perovskite light‐emitting diodes (PeLEDs) with record performance are successfully realized. It is found that the FAPbBr₃ device is hole dominant. To achieve charge carrier balance, on the anode side, PEDOT:PSS 8000 is employed as the hole injection layer, replacing PEDOT:PSS 4083 to suppress the hole current. On the cathode side, the solution‐processed ZnO nanoparticle (NP) is used as the electron injection layer in regular PeLEDs to improve the electron current. With the smallest ZnO NPs (2.9 nm) as electron injection layer (EIL), the solution‐processed PeLED exhibits a highest forward viewing power efficiency of 22.3 lm W^?1, a peak current efficiency of 21.3 cd A^?1, and an external quantum efficiency of 4.66%. The maximum brightness reaches a record 1.09 × 10⁵ cd m^?2. A record lifetime T₅₀ of 436 s is achieved at the initial brightness of 10 000 cd m^?2. Not only do PEDOT:PSS 8000 HIL and ZnO NPs EIL modulate the injected charge carriers to reach charge balance, but also they prevent the exciton quenching at the interface between the charge injection layer and the light emission layer. The subbandgap turn‐on voltage is attributed to Auger‐assisted energy up‐conversion process.     

Reduced Interface‐Mediated Recombination for High Open‐Circuit Voltages in CH3NH3PbI3 Solar Cells

Perovskite solar cells with all‐organic transport layers exhibit efficiencies rivaling their counterparts that employ inorganic transport layers, while avoiding high‐temperature processing. Herein, it is investigated how the choice of the fullerene derivative employed in the electron‐transporting layer of inverted perovskite cells affects the open‐circuit voltage (V_OC). It is shown that nonradiative recombination mediated by the electron‐transporting layer is the limiting factor for the V_OC in the cells. By inserting an ultrathin layer of an insulating polymer between the active CH₃NH₃PbI₃ perovskite and the fullerene, an external radiative efficiency of up to 0.3%, a V_OC as high as 1.16 V, and a power conversion efficiency of 19.4% are realized. The results show that the reduction of nonradiative recombination due to charge‐blocking at the perovskite/organic interface is more important than proper level alignment in the search for ideal selective contacts toward high V_OC and efficiency.     

Graded Heterojunction Engineering for Hole‐Conductor‐Free Perovskite Solar Cells with High Hole Extraction Efficiency and Conductivity

Despite great progress in the photovoltaic conversion efficiency (PCE) of inorganic–organic hybrid perovskite solar cells (PSCs), the large‐scale application of PSCs still faces serious challenges due to the poor‐stability and high‐cost of the spiro‐OMeTAD hole transport layer (HTL). It is of great fundamental importance to rationally address the issues of hole extraction and transfer arising from HTL‐free PSCs. Herein, a brand‐new PSC architecture is designed by introducing multigraded‐heterojunction (GHJ) inorganic perovskite CsPbBr_x I_3?x layers as an efficient HTL. The grade adjustment can be achieved by precisely tuning the halide proportion and distribution in the CsPbBr_x I_3?x film to reach an optimal energy alignment of the valance and conduction band between MAPbI₃ and CsPbBr_x I_3?x . The CsPbBr_x I_3?x GHJ as an efficient HTL can induce an electric field where a valance/conduction band edge is leveraged to bend at the heterojunction interface, boosting the interfacial electron–hole splitting and photoelectron extraction. The GHJ architecture enhances the hole extraction and conduction efficiency from the MAPbI₃ to the counter electrode, decreases the recombination loss during the hole transfer, and benefits in increasing the open‐circuit voltage. The optimized HTL‐free PCS based on the GHJ architecture demonstrates an outstanding thermal stability and a significantly improved PCE of 11.33%, nearly 40% increase compared with 8.16% for pure HTL‐free devices.     

Molecule‐Doped Nickel Oxide: Verified Charge Transfer and Planar Inverted Mixed Cation Perovskite Solar Cell

Both conductivity and mobility are essential to charge transfer by carrier transport layers (CTLs) in perovskite solar cells (PSCs). The defects derived from generally used ionic doping method lead to the degradation of carrier mobility and parasite recombinations. In this work, a novel molecular doping of NiO_x hole transport layer (HTL) is realized successfully by 2,2′‐(perfluoronaphthalene‐2,6‐diylidene)dimalononitrile (F6TCNNQ). Determined by X‐ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy, the Fermi level (E_F) of NiO_x HTLs is increased from ?4.63 to ?5.07 eV and valence band maximum (VBM)‐E_F declines from 0.58 to 0.29 eV after F6TCNNQ doping. The energy level offset between the VBMs of NiO_x and perovskites declines from 0.18 to 0.04 eV. Combining with first‐principle calculations, electrostatic force microscopy is applied for the first time to verify direct electron transfer from NiO_x to F6TCNNQ. The average power conversion efficiency of CsFAMA mixed cation PSCs is boosted by ≈8% depending on F6TCNNQ‐doped NiOx HTLs. Strikingly, the champion cell conversion efficiency of CsFAMA mixed cations and MAPbI₃‐based devices gets to 20.86% and 19.75%, respectively. Different from passivation effect, the results offer an extremely promising molecular doping method for inorganic CTLs in PSCs. This methodology definitely paves a novel way to modulate the doping in hybrid electronics more than perovskite and organic solar cells.     

Atomic‐Layer Deposition‐Assisted Double‐Side Interfacial Engineering for High‐Performance Flexible and Stable CsPbBr3 Perovskite Photodetectors toward Visible Light Communication Applications

Self‐powered photodetectors (PDs) based on inorganic metal halide perovskites are regarded as promising alternatives for the next generation of photodetectors. However, uncontrollable film growth and sluggish charge extraction at interfaces directly limit the sensitivity and response speed of perovskite‐based photodetectors. Herein, by assistance of an atomic layer deposition (ALD) technique, CsPbBr₃ perovskite thin films with preferred orientation and enlarged grain size are obtained on predeposited interfacial modification layers. Thanks to improved film quality and double side interfacial engineering, the optimized CsPbBr₃ (Al₂O₃/CsPbBr₃/TiO₂, ACT) perovskite PDs exhibit outstanding performance with ultralow dark current of 10^?11 A, high detectivity of 1.88 × 10¹³ Jones and broad linear dynamic range (LDR) of 172.7 dB. Significantly, excellent long‐term environmental stability (ambient conditions >100 d) and flexibility stability (>3000 cycles) are also achieved. The remarkable performance is credited to the synergistic effects of high carrier conductivity and collection efficiency, which is assisted by ALD modification layers. Finally, the ACT PDs are successfully integrated into a visible light communication system as a light receiver on transmitting texts, showing a bit rate as high as 100 kbps. These results open the window of high performance all‐inorganic halide perovskite photodetectors and extends to rational applications for optical communication.     

Two‐Photon Up‐Conversion Photoluminescence Realized through Spatially Extended Gap States in Quasi‐2D Perovskite Films

A new approach to generate a two‐photon up‐conversion photoluminescence (PL) by directly exciting the gap states with continuous‐wave (CW) infrared photoexcitation in solution‐processing quasi‐2D perovskite films [(PEA)₂(MA)₄Pb₅Br₁₆ with n = 5] is reported. Specifically, a visible PL peaked at 520 nm is observed with the quadratic power dependence by exciting the gap states with CW 980 nm laser excitation, indicating a two‐photon up‐conversion PL occurring in quasi‐2D perovskite films. Decreasing the gap states by reducing the n value leads to a dramatic decrease in the two‐photon up‐conversion PL signal. This confirms that the gap states are indeed responsible for generating the two‐photon up‐conversion PL in quasi‐2D perovskites. Furthermore, mechanical scratching indicates that the different‐n‐value nanoplates are essentially uniformly formed in the quasi‐2D perovskite films toward generating multi‐photon up‐conversion light emission. More importantly, the two‐photon up‐conversion PL is found to be sensitive to an external magnetic field, indicating that the gap states are essentially formed as spatially extended states ready for multi‐photon excitation. Polarization‐dependent up‐conversion PL studies reveal that the gap states experience the orbit–orbit interaction through Coulomb polarization to form spatially extended states toward developing multi‐photon up‐conversion light emission in quasi‐2D perovskites.     

Trash into Treasure: δ‐FAPbI3 Polymorph Stabilized MAPbI3 Perovskite with Power Conversion Efficiency beyond 21%

Effective passivation and stabilization of both the inside and interface of a perovskite layer are crucial for perovskite solar cells (PSCs), in terms of efficiency, reproducibility, and stability. Here, the first formamidinium lead iodide (δ‐FAPbI₃) polymorph passivated and stabilized MAPbI₃ PSCs are reported. This novel MAPbI₃/δ‐FAPbI₃ structure is realized via treating a mixed organic cation MA _x FA_{1‐ x} PbI₃ perovskite film with methylamine (MA) gas. In addition to the morphology healing, MA gas can also induce the formation of δ‐FAPbI₃ phase within the perovskite film. The in situ formed 1D δ‐FAPbI₃ polymorph behaves like an organic scaffold that can passivate the trap state, tunnel contact, and restrict organic‐cation diffusion. As a result, the device efficiency is easily boosted to 21%. Furthermore, the stability of the MAPbI₃/δ‐FAPbI₃ film is also obviously improved. This δ‐FAPbI₃ phase passivation strategy opens up a new direction of perovskite structure modification for further improving stability without sacrificing efficiency.     

The Role of Bulk and Interface Recombination in High‐Efficiency Low‐Dimensional Perovskite Solar Cells

2D Ruddlesden–Popper perovskite (RPP) solar cells have excellent environmental stability. However, the power conversion efficiency (PCE) of RPP cells remains inferior to 3D perovskite‐based cells. Herein, 2D (CH₃(CH₂)₃NH₃)₂(CH₃NH₃)_n?1Pb_nI_3n+1 perovskite cells with different numbers of [PbI₆]^4? sheets (n = 2–4) are analyzed. Photoluminescence quantum yield (PLQY) measurements show that nonradiative open‐circuit voltage (V_OC) losses outweigh radiative losses in materials with n > 2. The n = 3 and n = 4 films exhibit a higher PLQY than the standard 3D methylammonium lead iodide perovskite although this is accompanied by increased interfacial recombination at the top perovskite/C₆₀ interface. This tradeoff results in a similar PLQY in all devices, including the n = 2 system where the perovskite bulk dominates the recombination properties of the cell. In most cases the quasi‐Fermi level splitting matches the device V_OC within 20 meV, which indicates minimal recombination losses at the metal contacts. The results show that poor charge transport rather than exciton dissociation is the primary reason for the reduction in fill factor of the RPP devices. Optimized n = 4 RPP solar cells had PCEs of 13% with significant potential for further improvements.     

Dual Passivation of CsPbI3 Perovskite Nanocrystals with Amino Acid Ligands for Efficient Quantum Dot Solar Cells

Inorganic CsPbI₃ perovskite quantum dot (PQD) receives increasing attention for the application in the new generation solar cells, but the defects on the surface of PQDs significantly affect the photovoltaic performance and stability of solar cells. Herein, the amino acids are used as dual‐passivation ligands to passivate the surface defects of CsPbI₃ PQDs using a facile single‐step ligand exchange strategy. The PQD surface properties are investigated in depth by combining experimental studies and theoretical calculation approaches. The PQD solid films with amino acids as dual‐passivation ligands on the PQD surface are thoroughly characterized using extensive techniques, which reveal that the glycine ligand can significantly improve defect passivation of PQDs and therefore diminish charge carrier recombination in the PQD solid. The power conversion efficiency (PCE) of the glycine‐based PQD solar cell (PQDSC) is improved by 16.9% compared with that of the traditional PQDSC fabricated with Pb(NO₃)₂ treating the PQD surface, owning to improved charge carrier extraction. Theoretical calculations are carried out to comprehensively understand the thermodynamic feasibility and favorable charge density distribution on the PQD surface with a dual‐passivation ligand.