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多铁性材料同时具有多种铁性(铁电性、铁磁性或铁弹性)的有序, 可实现电磁信号的相互控制, 成为近年来研究热点。在具有成分无序的复杂体系中, 长程铁性有序有可能被打破, 材料将表现出弛豫特性。我们将至少存在一种铁性弛豫特性的多铁性材料称之为弛豫多铁性材料。这类多铁性材料的极化强度(或磁化强度)在外加电场(或外加磁场)作用下响应更加灵敏, 其磁电耦合机制与长程有序的多铁性材料不同。本文结合国内外最新研究成果, 首先介绍了和弛豫铁性有序相关的物理概念, 重点阐述了多铁性材料在铁电和铁磁双弛豫态下的磁电耦合机制; 然后, 详细介绍了钙钛矿结构(包括PbB1B2O3基和BiFeO3基材料)和非钙钛矿结构(包括层状Bi结构和非正常铁电体)弛豫多铁性材料的研究进展; 最后, 对该领域亟待解决的问题进行了展望。 相似文献
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Meng Zhao Lei Wang Yifan Zhao Yujing Du Zhexi He Kai Chen Zhenlin Luo Wensheng Yan Qian Li Chenying Wang Zhuangde Jiang Ming Liu Ziyao Zhou 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(28):2301955
Finding an energy-efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin-polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8 nm)/Co (0.65 nm)/Pt (2.5 nm)/PN Si heterojunction in an energy-efficient manner is proposed. The coercive field (HC) is altered from 261 to 95 Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140 Oe magnetic bias assistant. The element-resolved X-ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron-induced redistribution of the orbital and spin moment in Co magnetization. The first-principle calculations also reveal that the photo-induced electrons shift the Fermi level of electrons and enhance the in-plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding HC decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current. 相似文献
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通过固相法制备了(1–x)(0.9462K0.5Na0.5NbO3-0.0498LiSbO3-0.004BiFeO3)-xCo0.85Cu0.15Fe2O4((1–x)(KNN-LS-BFO)-xCCFO)(x=0.1、0.2、0.3、0.4、0.5)复合多铁性磁电陶瓷.XRD分析表明:烧结后的样品为复合的钙钛矿和尖晶石结构,没有发现杂相产生.SEM照片显示KNN-LS-BFO晶粒生长完好尺寸较大,而CCFO晶粒尺寸较小.当x从0.1增加到0.5时,复合材料的压电系数从120 pC/N减小到33 pC/N,而饱和磁化强度和剩磁增加,饱和磁致伸缩系数从18×10–6增加到51.5×10–6左右.材料的磁电耦合系数随着外磁场的增加先增大到极大值后再减小;当交变磁场频率为1 kHz,x=0.3时材料的磁电电压系数达到最大值20.6 mV/A. 相似文献
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Matteo Cialone Aliona Nicolenco Shauna Robbennolt Enric Menndez Gemma Rius Jordi Sort 《Advanced Materials Interfaces》2021,8(1)
Tailoring the magnetic properties of ordered arrays of patterned structures usually requires stringent control of their size, pitch, microstructure, and composition. Here, a fundamentally different approach to manipulate the magnetic behavior of lithographed microdisks, based on the application of electrical voltage, is demonstrated. First, highly porous iron oxide films with virtually no magnetic response (OFF state) are grown by sol–gel chemistry. Subsequently, arrays of microdisks (8 µm in diameter) are obtained combining lithography with wet chemical etching processes. Electrolyte‐gating (with an anhydrous electrolyte) is then employed to induce a tunable (i.e., “on‐demand”) ferromagnetic response in these disks (OFF–ON switching of magnetism) at room temperature. The changes in magnetic properties are attributed to magnetoelectrically‐driven oxygen ion migration, which is enhanced due to nanoporosity. This causes partial reduction of the oxide phases to metallic Fe. The effect can be considerably reversed by applying voltage of opposite polarity. These results are appealing for diverse technological applications that require the use of patterned structures with easily tunable magnetic properties, such as magnetic micro‐electro‐mechanical systems, microfluidic, and lab‐on‐a‐chip platforms for biomedical therapies and, ultimately, energy‐efficient magnetic memories or neuromorphic computing. 相似文献
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Yujing Du Yifan Zhao Lei Wang Zhexi He Yangyang Wu Chenying Wang Libo Zhao Zhuangde Jiang Ming Liu Ziyao Zhou 《Small (Weinheim an der Bergstrasse, Germany)》2023,19(44):2302884
Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated. 相似文献
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磁电多铁性复合材料由于具有磁电耦合的特性,在存储器、传感器等领域具有广泛的应用前景,近年来成为该领域研究的前沿问题。本文采用有限元方法对叠层块状磁电多铁性复合材料的磁电耦合效应进行计算分析,研究了边界条件、尺寸、粘接层的厚度以及材料性能对磁电耦合效应的影响,以期为磁电多铁性复合材料器件设计提供理论依据。研究表明,上下外表面z方向固定、长宽比的增大、铁电层所占比例的增大、粘接层厚度的减小及杨氏模量的增加均能提高磁电多铁性复合材料的磁电耦合系数。 相似文献
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Cross correlation between magnetism and electricity in a solid can host magnetoelectric effects, such as magnetic (electric) induction of polarization (magnetization). A key to attain the gigantic magnetoelectric response is to find the efficient magnetism–electricity coupling mechanisms. Among those, recently the emergence of spontaneous (ferroelectric) polarization in the insulating helimagnet or spiral‐spin structure was unraveled, as mediated by the spin‐exchange and spin–orbit interactions. The sign of the polarization depends on the helicity (spin rotation sense), while the polarization direction itself depends on further details of the mechanism and the underlying lattice symmetry. Here, we describe some prototypical examples of the spiral‐spin multiferroics, which enable some unconventional magnetoelectric control such as the magnetic‐field‐induced change of the polarization direction and magnitude as well as the electric‐field‐induced change of the spin helicity and magnetic domain. 相似文献
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使用脉冲激光沉积技术,在(001)取向的LaAlO3(LAO)单晶基片上外延生长了BaTiO3/La2/3Sr1/3MnO3(BTO/LSMO)双层复合薄膜.电学和磁学性能的研究显示复合薄膜具有较低的相对介电常数(εr=263),优良的铁电和铁磁性能以及高于室温的铁磁居里温度(Tc=317 K).复合薄膜的磁电电压系数(αE)为176 mV/A,高于同类结构磁电系统一个数量级,相应的界面耦合系数k值为0.68,表明铁磁层和铁电层界面之间存在较大程度的耦合. 相似文献
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Spintronics: Ionic Modulation of the Interfacial Magnetism in a Bilayer System Comprising a Heavy Metal and a Magnetic Insulator for Voltage‐Tunable Spintronic Devices (Adv. Mater. 40/2018)
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Mengmeng Guan Lei Wang Shishun Zhao Ziyao Zhou Guohua Dong Wei Su Tai Min Jing Ma Zhongqiang Hu Wei Ren Zuo‐Guang Ye Ce‐Wen Nan Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(40)
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Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant research activity driven by its profound physics and enormous potential for application. This review article aims to provide a comprehensive review of recent progress in VCM in different thin films. We first present a brief summary of the modulation of magnetism by electric fields and describe its discovery, development, classification, mechanism, and potential applications. In the second part, we focus on the classification of VCM from the viewpoint of materials, where both the magnetic medium and dielectric gating materials, and their influences on magnetic modulation efficiency are systematically described. In the third part, the nature of VCM is discussed in detail, including the conventional mechanisms of charge, strain, and exchange coupling at the interfaces of heterostructures, as well as the emergent models of orbital reconstruction and electrochemical effect. The fourth part mainly illustrates the typical performance characteristics of VCM, and discusses, in particular, its promising application for reducing power consumption and realizing high-density memory in several device configurations. The present review concludes with a discussion of the challenges and future prospects of VCM, which will inspire more in-depth research and advance the practical applications of this field. 相似文献
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Mengmeng Guan Lei Wang Shishun Zhao Ziyao Zhou Guohua Dong Wei Su Tai Min Jing Ma Zhongqiang Hu Wei Ren Zuo‐Guang Ye Ce‐Wen Nan Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(40)
The voltage modulation of yttrium iron garnet (YIG) is of practical and theoretical significance; due to its advantages of compactness, high‐speed response, and energy efficiency, it can be used for various spintronic applications, including spin‐Hall, spin‐pumping, and spin‐Seebeck effects. In this study, a significant ferromagnetic resonance change is achieved within the YIG/Pt bilayer heterostructures uisng ionic modulation, which is accomplished by modifying the interfacial magnetism in the deposited “capping” platinum layer. With a small voltage bias of 4.5 V, a large ferromagnetic field shift of 690 Oe is achieved in heterostructures of YIG (13 nm)/Pt (3 nm)/(ionic liquid, IL)/(Au capacitor). The remarkable magnetoelectric (ME) tunability comes from the additional and voltage‐induced ferromagnetic ordering, caused by uncompensated d‐orbital electrons in the Pt metal layer. Confirmed by first‐principle calculations, this finding paves the way for novel voltage‐tunable YIG‐based spintronics. 相似文献
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基于磁致伸缩相与压电相的本构方程,应用弹性力学的方法,建立了功能梯度铁电铁磁复合材料弯曲模态下的磁电耦合静态力学模型。假设铁电和铁磁材料的物理参数均为沿厚度方向的线性或指数函数,分析计算了由PZT作为铁电材料和CoFe2O4作为铁磁材料的双层复合材料的磁电效应。结果表明,在弯曲模态下,磁电电压系数出现两个峰值。负梯度的铁电(或铁磁)材料提高磁电效应,正梯度的铁电(或铁磁)材料降低磁电效应。同号梯度的铁电铁磁材料对磁电效应的影响更大。 相似文献
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The ever‐growing technological demand for more advanced microelectronic and spintronic devices keeps catalyzing the idea of controlling magnetism with an electric field. Although voltage‐driven on/off switching of magnetization is already established in some magnetoelectric (ME) systems, often the coupling between magnetic and electric order parameters lacks an adequate reversibility, energy efficiency, working temperature, or switching speed. Here, the ME performance of a manganite supercapacitor composed of a ferromagnetic, spin‐polarized ultrathin film of La0.74Sr0.26MnO3 (LSMO) electrically charged with an ionic liquid electrolyte is investigated. Fully reversible, rapid, on/off switching of ferromagnetism in LSMO is demonstrated in combination with a shift in Curie temperature of up to 26 K and a giant ME coupling coefficient of ≈226 Oe V−1. The application of voltages of only ≈2 V results in ultralow energy consumptions of about 90 µJ cm−2. This work provides a step forward toward low‐power, high‐endurance electrical switching of magnetism for the development of high‐performance ME spintronics. 相似文献
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Anton Khanas Sergei Zarubin Anna Dmitriyeva Andrei Markeev Yury Matveyev Jos R.L. Mardegan Sonia Francoual Andrei Zenkevich 《Advanced Materials Interfaces》2020,7(14)
Composite bilayer multiferroics combining ferroelectric (FE) and ferromagnetic (FM) thin‐film materials in a heterostructure and exhibiting magnetoelectric (ME) coupling effect are of great scientific and technological interest. In particular, electronically driven ME coupling implies that the FE polarization orientation affects the magnetic properties of FM at the interface with FE. Unlike metals, where the electric field penetrates over distances of 1–2 unit cells only, magnetic semiconductors, particularly doped EuS, with a ≈10 nm screening length appear a viable alternative. In addition, EuS exhibits a metal–insulator transition, thus offering new functionalities in nanoelectronics. Meanwhile, ultrathin polycrystalline films of doped HfO2, such as Hf0.5Zr0.5O2 (HZO), stabilized in the noncentrosymmetric orthorhombic phase, are identified as a novel class of robust FE materials. In this work, FM EuS integrated with FE HZO in a bilayered structure is promoted as a prospective composite multiferroic. The functionality of both ultrathin FM‐EuS and FE‐HZO layers as well as their compatibility in a capacitor configuration is demonstrated. The comprehensive information on the structural, chemical, and electronic properties of EuS/HZO interface endorses it as a promising medium for magnetoelectric coupling phenomena, particularly, the effect of polarization reversal in FE‐HZO on the magnetic and transport properties in EuS. 相似文献
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