Mixed Valence Perovskite Cs2Au2I6: A Potential Material for Thin‐Film Pb‐Free Photovoltaic Cells with Ultrahigh Efficiency

New light is shed on the previously known perovskite material, Cs₂Au₂I₆, as a potential active material for high‐efficiency thin‐film Pb‐free photovoltaic cells. First‐principles calculations demonstrate that Cs₂Au₂I₆ has an optimal band gap that is close to the Shockley–Queisser value. The band gap size is governed by intermediate band formation. Charge disproportionation on Au makes Cs₂Au₂I₆ a double‐perovskite material, although it is stoichiometrically a single perovskite. In contrast to most previously discussed double perovskites, Cs₂Au₂I₆ has a direct‐band‐gap feature, and optical simulation predicts that a very thin layer of active material is sufficient to achieve a high photoconversion efficiency using a polycrystalline film layer. The already confirmed synthesizability of this material, coupled with the state‐of‐the‐art multiscale simulations connecting from the material to the device, strongly suggests that Cs₂Au₂I₆ will serve as the active material in highly efficient, nontoxic, and thin‐film perovskite solar cells in the very near future.     

Corrugated Heterojunction Metal‐Oxide Thin‐Film Transistors with High Electron Mobility via Vertical Interface Manipulation

A new strategy is reported to achieve high‐mobility, low‐off‐current, and operationally stable solution‐processable metal‐oxide thin‐film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin‐indium‐tin‐zinc‐oxide (ITZO)/indium‐gallium‐zinc‐oxide (IGZO) and thick‐ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off‐ and on‐states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field‐effect mobility >50 cm² V^?1 s^?1 with an on/off current ratio of >10⁸ and good operational stability (threshold voltage shift <1 V for a positive‐gate‐bias stress of 10 ks, without passivation). To exploit the underlying conduction mechanism of the corrugated heterojunction TFTs, a physical model is implemented by using a variety of chemical, structural, and electrical characterization tools and Technology Computer‐Aided Design simulations. The physical model reveals that efficient charge manipulation is possible via the corrugated structure, by inducing an extremely high carrier concentration at the nanoscale vertical channel regions, enabling low off‐currents and high on‐currents depending on the applied gate bias.     

Aggregation‐Induced Multilength Scaled Morphology Enabling 11.76% Efficiency in All‐Polymer Solar Cells Using Printing Fabrication

All‐polymer solar cells (all‐PSCs) exhibit excellent stability and readily tunable ink viscosity, and are therefore especially suitable for printing preparation of large‐scale devices. At present, the efficiency of state‐of‐the‐art all‐PSCs fabricated by the spin‐coating method has exceeded 11%, laying the foundation for the preparation and practical utilization of printed devices. A high power conversion efficiency (PCE) of 11.76% is achieved based on PTzBI‐Si:N2200 all‐PSCs processing with 2‐methyltetrahydrofuran (MTHF, an environmentally friendly solvent) and preparation of active layers by slot die printing, which is the top efficient for all‐PSCs. Conversely, the PCE of devices processed by high‐boiling point chlorobenzene is less than 2%. Through the study of film formation kinetics, volatile solvents can freeze the morphology in a short time, and a more rigid conformation with strong intermolecular interaction combined with the solubility limit of PTzBI‐Si and N2200 in MTHF results in the formation of a fibril network in the bulk heterojunction. The multilength scaled morphology ensures fast transfer of carriers and facilitates exciton separation, which boosts carrier mobility and current density, thus improving the device performance. These results are of great significance for large‐scale printing fabrication of high‐efficiency all‐PSCs in the future.     

玻璃基片硅薄膜太阳电池的制备与研究现状

硅薄膜太阳电池已成为太阳电池研究的一个热点.主要阐述了玻璃基片硅薄膜太阳电池的制备方法以及研究进展,提出了影响发展的几种因素以及在以后的研究中需重点解决的问题.     

Interface Engineering of Inorganic Thin‐Film Solar Cells – Materials‐Science Challenges for Advanced Physical Concepts

The challenges and research needs for the interface engineering of thin‐film solar cells using inorganic‐compound semiconductors are discussed from a materials‐science point of view. It is, in principle, easily possible to define optimized device structures from physical considerations. However, to realize these structures, many materials' limitations must be overcome by complex processing strategies. In this paper, interface properties and growth morphology are discussed using CdTe solar cells as an example. The need for a better fundamental understanding of cause–effect relationships for improving thin‐film solar cells is emphasized.     

陷光结构在GaAs薄膜太阳电池中的应用

陷光结构由于其独特的光学特性,在光伏器件中发挥的作用越来越重要。目前硅基太阳电池中陷光结构的应用很常见,然而在GaAs薄膜太阳电池中陷光结构的报道并不多。详细介绍了陷光结构的原理及其在GaAs薄膜电池中的研究现状和应用情况。综述了GaAs薄膜太阳能电池中常用的三类陷光结构:正面陷光结构(包括纳米颗粒、纳米线、纳米锥等)、背面陷光结构(如镜面背反射层)以及混合陷光结构。大量研究表明,陷光结构的使用可以进一步提高GaAs薄膜电池的光电转换效率,一定程度上达到降低电池生产成本的目的。     

Stretchable Thin‐Film Electrodes for Flexible Electronics with High Deformability and Stretchability

Flexible and stretchable electronics represent today's cutting‐edge electronic technologies. As the most‐fundamental component of electronics, the thin‐film electrode remains the research frontier due to its key role in the successful development of flexible and stretchable electronic devices. Stretchability, however, is generally more challenging to achieve than flexibility. Stretchable electronic devices demand, above all else, that the thin‐film electrodes have the capacity to absorb a large level of strain (>>1%) without obvious changes in their electrical performance. This article reviews the progress in strategies for obtaining highly stretchable thin‐film electrodes. Applications of stretchable thin‐film electrodes fabricated via these strategies are described. Some perspectives and challenges in this field are also put forward.     

Fused‐Ring Acceptors with Asymmetric Side Chains for High‐Performance Thick‐Film Organic Solar Cells

A kind of new fused‐ring electron acceptor, IDT‐OB, bearing asymmetric side chains, is synthesized for high‐efficiency thick‐film organic solar cells. The introduction of asymmetric side chains can increase the solubility of acceptor molecules, enable the acceptor molecules to pack closely in a dislocated way, and form favorable phase separation when blended with PBDB‐T. As expected, PBDB‐T:IDT‐OB‐based devices exhibit high and balanced hole and electron mobility and give a high power conversion efficiency (PCE) of 10.12%. More importantly, the IDT‐OB‐based devices are not very sensitive to the film thickness, a PCE of 9.17% can still be obtained even the thickness of active layer is up to 210 nm.     

Improved Morphology and Performance of Solution‐Processed Metal‐Oxide Thin‐Film Transistors Due to a Polymer Based Interface Modifier

The influence of a polymer interface modifier on the performance of solution‐processed indium‐based metal‐oxide (MO) thin‐film transistors (TFTs) is investigated. We use the polymer ethoxylated polyethylenimine (PEIE). Compared to a reference sample this modification enhances the mobility by a factor of four, clearly reduces the contact and the sheet resistance, and decreases the charge carrier activation energy by about 20%. The improved electrical performance originates from both a reduced contact and a reduced sheet resistance of the TFTs. The molecular dipole of PEIE reduces the work function of the electrodes. Adversely the dipole enhances the off current and the trap density at the semiconductor/dielectric interface for bottom‐contact transistors with small channel length. The substrate becomes highly polar with a PEIE‐treatment. Accordingly, topographical studies of bottom‐contact TFTs show a very similar MO film morphology on the electrodes and in the channel for modified TFTs, whereas in the untreated samples the film has a higher roughness on the electrodes than in the channel. TFTs in top‐contact configuration with the polymer interface layer at the dielectric/semiconductor interface also show higher mobility compared to the reference MOTFTs which displays that the improved performance is due to the improved morphology of the MO film.