Self-organized magnetic nanowire arrays based on alumina and titania templates

Densely packed arrays of magnetic nanowires have been synthesized by electrodeposition filling of nanopores in alumina and titania membranes formed by self-assembling during anodization process. Emphasis is made on the control of the production parameters leading to ordering degree and lattice parameter of the array as well as nanowires diameter and length. Structural, morphological and magnetic properties exhibited by nanowire arrays have been studied for several nanowire compositions, different ordering degree and for different nanowire aspect ratios. The magnetic behaviour of nanowires array is governed by the balance between different energy contributions: shape anisotropy of individual nanowires, the magnetostatic interaction of dipolar origin among nanowires, and magnetocrystalline and magnetoelastic anisotropies induced by the pattern templates. These novel nanocomposites, based on ferromagnetic nanowires embedded in anodic nanoporous templates, are becoming promising candidates for technological applications such as functionalised arrays for magnetic sensing, ultrahigh density magnetic storage media or spin-based electronic devices.     

Vertically aligned cadmium chalcogenide nanowire arrays on muscovite mica: a demonstration of epitaxial growth strategy

We report a strategy for achieving epitaxial, vertically aligned cadmium chalcogenide (CdS, CdSe, and CdTe) nanowire arrays utilizing van der Waals epitaxy with (001) muscovite mica substrate. The nanowires, grown from a vapor transport process, exhibited diameter uniformity throughout their length, sharp interface to the substrate, and positive correlation between diameter and length with preferential growth direction of [0001] for the monocrystalline wurtzite CdS and CdSe nanowires, but of [111] for zinc blende CdTe nanowires, which also featured abundant twinning boundaries. Self-catalytic vapor-liquid-solid mechanism with hydrogen-assisted thermal evaporation is proposed to intepret the observations. Optical absorption from the as-grown CdSe nanowire arrays on mica at 10 K revealed intense first-order exciton absorption and its longitudinal optical phonon replica. A small Stokes shift (～1.3 meV) was identified, suggesting the high quality of the nanowires. This study demonstrated the generality of van der Waals epitaxy for the growth of nanowire arrays and their potential applications in optical and energy related devices.     

Buckling behavior of nanowires predicted by a new surface energy density model

The axial buckling behavior of nanowires is investigated with a new continuum theory, in which the surface effect of nanomaterials is characterized by the surface energy density. Only the surface energy density of bulk materials and the surface relaxation parameter are involved, instead of the surface elastic constants in the classical surface elasticity theory. Two kinds of nanowires with different boundary conditions are discussed. It is demonstrated that the new continuum theory can predict the buckling behavior of nanowires very well. Similar to the prediction of the classical elasticity theory, the critical compressive load of axial buckling of nanowires predicted by the new continuum theory increases with an increasing characteristic length, such as the diameter or height of nanowires. With the same aspect ratio, a nanowire with a rectangular cross section possesses a larger critical buckling load than that with a circular one. However, the surface effect could enhance the critical buckling load not only for a fixed–fixed nanowire but also for a cantilevered one in contrast to the classical elastic model. All the results predicted by the new continuum theory agree well with predictions by the surface elasticity models. The present research not only verifies the validation of the new continuum theory, but also gives a much more convenient characterization of buckling behaviors of nanowires. This should be helpful for the design of nanodevices based on nanomaterials, for example, nanobeams in NEMS or high-precision instruments.     

Heterointerfaces in semiconductor nanowires

Semiconductor nanowires have attracted considerable recent interest due to their unique properties, including their highly anisotropic geometry, large surface-to-volume ratio, and carrier and photon confinement. Currently, tremendous efforts are devoted to the rational synthesis of advanced nanowire heterostructures. Yet, if functional devices are to be made from these materials, precise control over their composition, structure, morphology, and dopant concentration must be achieved. Their fundamental properties must also be carefully investigated since the presence of a large surface and interfacial area in nanowires can profoundly alter their performance. In this article, the progress, promise, and challenges in the area of nanowire heterostructured materials are reviewed, with particular emphasis on the effect of different types of heterointerfaces on device properties.     

Formation of chiral branched nanowires by the Eshelby Twist

Manipulating the morphology of inorganic nanostructures, such as their chirality and branching structure, has been actively pursued as a means of controlling their electrical, optical and mechanical properties. Notable examples of chiral inorganic nanostructures include carbon nanotubes, gold multishell nanowires, mesoporous nanowires and helical nanowires. Branched nanostructures have also been studied and been shown to have interesting properties for energy harvesting and nanoelectronics. Combining both chiral and branching motifs into nanostructures might provide new materials properties. Here we show a chiral branched PbSe nanowire structure, which is formed by a vapour-liquid-solid branching from a central nanowire with an axial screw dislocation. The chirality is caused by the elastic strain of the axial screw dislocation, which produces a corresponding Eshelby Twist in the nanowires. In addition to opening up new opportunities for tailoring the properties of nanomaterials, these chiral branched nanowires also provide a direct visualization of the Eshelby Twist.     

Engineering III–V Semiconductor Nanowires for Device Applications

III–V semiconductor nanowires offer potential new device applications because of the unique properties associated with their 1D geometry and the ability to create quantum wells and other heterostructures with a radial and an axial geometry. Here, an overview of challenges in the bottom-up approaches for nanowire synthesis using catalyst and catalyst-free methods and the growth of axial and radial heterostructures is given. The work on nanowire devices such as lasers, light emitting nanowires, and solar cells and an overview of the top-down approaches for water splitting technologies is reviewed. The authors conclude with an analysis of the research field and the future research directions.     

Three-dimensional Ni/TiO2 nanowire network for high areal capacity lithium ion microbattery applications

The areal capacity of nanowire-based microbatteries can be potentially increased by increasing the length of nanowires. However, agglomeration of high aspect ratio nanowire arrays could greatly degrade the performance of nanowires for lithium ion (Li-ion) battery applications. In this work, a three-dimensional (3-D) Ni/TiO(2) nanowire network was successfully fabricated using a 3-D porous anodic alumina (PAA) template-assisted electrodeposition of Ni followed by TiO(2) coating using atomic layer deposition. Compared to the straight Ni/TiO(2) nanowire arrays fabricated using conventional PAA templates, the 3-D Ni/TiO(2) nanowire network shows higher areal discharging capacity. The areal capacity increases proportionally with the length of nanowires. With a stable Ni/TiO(2) nanowire network structure, 100% capacity is retained after 600 cycles. This work paves the way to build reliable 3-D nanostructured electrodes for high areal capacity microbatteries.     

The Role of Cuprous Oxide Seeds in the One‐Pot and Seeded Syntheses of Copper Nanowires

This paper demonstrates that Cu₂O nanoparticles form in the early stages of a solution‐phase synthesis of copper nanowires, and aggregate to form the seeds from which copper nanowires grow. Removal of ethylenediamine from the synthesis leads to the rapid formation of Cu₂O octahedra. These octahedra are introduced as seeds in the same copper nanowire synthesis to improve the yield of copper nanowires from 12% to >55%, and to enable independent control over the length of the nanowires. Transparent conducting films are made from nanowires with different lengths to examine the effect of nanowire aspect ratio on the film performance.     

Capillary-driven assembly of ZnO nanowire arrays into micropatterns

The vertically aligned ZnO nanowire arrays prepared by vapor transport process can be assembled into complex micropatterns under capillary force. The deflection of the flexible ceramic nanowire is closely related to the liquid tension coefficient, mechanical and structural properties of the ZnO nanowires. The bended nanowires are adhesive together because the solid adhesion energy is sufficient to withstand the restoring elastic force of the deformed nanowires. The size of the bundling pattern can be controlled by varying the aspect ratio of the nanowire. The deflection of the ZnO nanostructure composed of a nanowire and a base is multifarious.     

Macroscopic assembly of indefinitely long and parallel nanowires into large area photodetection circuitry

Integration of nanowires into functional devices with high yields and good reliability turned out to be a lot more challenging and proved to be a critical issue obstructing the wide application of nanowire-based devices and exploitation of their technical promises. Here we demonstrate a relatively easy macrofabrication of a nanowire-based imaging circuitry using a recently developed nanofabrication technique. Extremely long and polymer encapsulated semiconducting nanowire arrays, mass-produced using the iterative thermal drawing, facilitate the integration process; we manually aligned the fibers containing selenium nanowires over a lithographically defined circuitry. Controlled etching of the encapsulating polymer revealed a monolayer of nanowires aligned over an area of 1 cm(2) containing a 10 × 10 pixel array. Each light-sensitive pixel is formed by the contacting hundreds of parallel photoconductive nanowires between two electrodes. Using the pixel array, alphabetic characters were identified by the circuitry to demonstrate its imaging capacity. This new approach makes it possible to devise extremely large nanowire devices on planar, flexible, or curved substrates with diverse functionalities such as thermal sensors, phase change memory, and artificial skin.     

From InSb nanowires to nanocubes: looking for the sweet spot

High aspect ratios are highly desired to fully exploit the one-dimensional properties of indium antimonide nanowires. Here we systematically investigate the growth mechanisms and find parameters leading to long and thin nanowires. Variation of the V/III ratio and the nanowire density are found to have the same influence on the "local" growth conditions and can control the InSb shape from thin nanowires to nanocubes. We propose that the V/III ratio controls the droplet composition and the radial growth rate and these parameters determine the nanowire shape. A sweet spot is found for nanowire interdistances around 500 nm leading to aspect ratios up to 35. High electron mobilities up to 3.5 × 10(4) cm(2) V(-1) s(-1) enable the realization of complex spintronic and topological devices.     

Preferred growth orientation of metallic fcc nanowires under direct and alternating electrodeposition conditions

Gold and copper nanowires were generated through electrochemical deposition into nanoporous polymeric templates. Depending on the growth conditions, such wires exhibited a distinct textured structure as evidenced by x-ray diffraction. The preferred growth orientation is explained by applying the broken-bond model in combination with surface-energy anisotropy and energy minimization. During the growth process, the aspect ratio of the cylindrical nanowire and thus the area of the mantle surface and its contribution to the total surface energy increase. Under direct current deposition conditions, [Formula: see text] textured metallic fcc nanowires represent the configuration of lowest surface energy at aspect ratios above?1. Under alternating current deposition conditions, {110} nanowire base surfaces vanish due to their high surface energy, leading to successive development of a [Formula: see text] texture as the configuration of lowest energy at aspect ratios above 5.     

Porosity control in metal-assisted chemical etching of degenerately doped silicon nanowires

We report the fabrication of degenerately doped silicon (Si) nanowires of different aspect ratios using a simple, low-cost and effective technique that involves metal-assisted chemical etching (MacEtch) combined with soft lithography or thermal dewetting metal patterning. We demonstrate sub-micron diameter Si nanowire arrays with aspect ratios as high as 180:1, and present the challenges in producing solid nanowires using MacEtch as the doping level increases in both p- and n-type Si. We report a systematic reduction in the porosity of these nanowires by adjusting the etching solution composition and temperature. We found that the porosity decreases from top to bottom along the axial direction and increases with etching time. With a MacEtch solution that has a high [HF]:[H(2)O(2)] ratio and low temperature, it is possible to form completely solid nanowires with aspect ratios of less than approximately 10:1. However, further etching to produce longer wires renders the top portion of the nanowires porous.     

Schottky-Contacted Nanowire Sensors

The progress of the Internet-of-Things in the past few years has necessitated the support of high-performance sensors. Schottky-contacted nanowire sensors have attracted considerable attention owing to their high sensitivity and fast response time. Their progress is reviewed here, based on several kinds of important nanowires, for applications such as bio/chemical sensors, gas sensors, photodetectors, and strain sensors. Although Schottky-contacted nanowire sensors deliver excellent performance in these fields, they can be further improved by various methods, including defect engineering, surface modification, the piezotronic effect, and the piezophototronic effect, all of which are discussed here. With regard to practical applications, further efforts are required to address challenges such as the stability, selectivity, ultrafast response, multifunctionality, flexibility, distributed energy supply, and sustainability of Schottky-contacted nanowire sensors. Finally, future perspectives and solutions are discussed.     

Formation of hybrid structures: copper oxide nanocrystals templated on ultralong copper nanowires for open network sensing at room temperature

A facile large-scale synthesis approach for producing intrinsically p-type nanowires with uniform coverage of nanocrystals to form a highly interconnected porous nanowire network is of great demand for p-type sensing. Here, we have demonstrated synthesis of a very high aspect ratio (10(2)-10(5)) open network of interconnected hybrid nanocrystals-nanowire copper and copper oxide nanomaterials. The copper nanowire scaffold is employed to realize a porous and highly interconnected network of hybrid metal-metal oxide nanocrystal-nanowire structures. The structural and composition tunability of the hybrid nanomaterials is demonstrated. The hybrid copper-copper oxide nanowires exhibit enhanced gas/light sensing properties without any operating temperature. This may be attributed to enhanced medium diffusion due to the porous network of highly interconnected nanocrystal-nanowire structures.     

Elastic Gallium Phosphide Nanowire Optical Waveguides—Versatile Subwavelength Platform for Integrated Photonics

Emerging technologies for integrated optical circuits demand novel approaches and materials. This includes a search for nanoscale waveguides that should satisfy criteria of high optical density, small cross-section, technological feasibility and structural perfection. All these criteria are met with self-assembled gallium phosphide (GaP) epitaxial nanowires. In this work, the effects of the nanowire geometry on their waveguiding properties are studied both experimentally and numerically. Cut-off wavelength dependence on the nanowire diameter is analyzed to demonstrate the pathways for fabrication of low-loss and subwavelength cross-section waveguides for visible and near-infrared (IR) ranges. Probing the waveguides with a supercontinuum laser unveils the filtering properties of the nanowires due to their resonant action. The nanowires exhibit perfect elasticity allowing fabrication of curved waveguides. It is demonstrated that for the nanowire diameters exceeding the cut-off value, the bending does not sufficiently reduce the field confinement promoting applicability of the approach for the development of nanoscale waveguides with a preassigned geometry. Optical X-coupler made of two GaP nanowires allowing for spectral separation of the signal is fabricated. The results of this work open new ways for the utilization of GaP nanowires as elements of advanced photonic logic circuits and nanoscale interferometers.     

Self-organized Ce(1-x)Gd(x)O(2-y) nanowire networks with very fast coarsening driven by attractive elastic interactions

Assembling arrays of ordered nanowires is a key objective for many of their potential applications. However, a lack of understanding and control of the nanowires' growth mechanisms limits their thorough development. In this work, an appealing new path towards self-organized epitaxial nanowire networks produced by high-throughput solution methods is reported. Two requisites are identified to generate the nanowires: a thermodynamic driving force for an unrestricted elongated equilibrium island shape, and a very fast effective coarsening rate. These requirements are met in anisotropically strained Ce(1-x)Gd(x)O(2-y) nanowires with the (011) orientation grown on the (001) surface of LaAlO(3) substrates. Nanowires with aspect ratios above ≈100 oriented along two mutually orthogonal axes are obtained leading to labyrinthine networks. A very fast effective nanowire growth rate (≈60 nm min(-1)) for ex-situ thermally annealed nanostructures derives from simultaneous kinetic processes occurring in a branched network. Ostwald ripening and anisotropic dynamic coalescence, both promoted by strain-driven attractive nanowire interaction, and rapid recrystallization, enabled by fast atomic diffusion associated with a high concentration of oxygen vacancies, contribute to such an effective growth rate. This bottom-up approach to self-organized nanowire growth has a wide potential for many materials and functionalities.     

Enhanced absorption in silicon nanocone arrays for photovoltaics

Silicon nanowire arrays have been shown to demonstrate light trapping properties and promising potential for next-generation photovoltaics. In this paper, we performed systematic and detailed simulation studies on the optical properties of silicon nanocone arrays as compared to nanowires arrays. Nanocone arrays were found to have significantly improved solar absorption and efficiencies over nanowire arrays. Detailed simulations revealed that nanocones have superior absorption due to reduced reflection from their smaller tip and reduced transmission from their larger base. The enhanced efficiencies of silicon nanocone arrays were found to be insensitive to tip diameter, which should facilitate their fabrication. Breaking the vertical mirror symmetry of nanowires results in a broader absorption spectrum such that overall efficiencies are enhanced. We also evaluated the electric field intensity, carrier generation and angle-dependent optical properties of nanocones and nanowires to offer further physical insight into their light trapping properties.     

The Faraday rotation angle of Ni nanowire arrays: its dependence on photon energy and nanowire size

The magneto-optical properties of Ni nanowire arrays embedded in anodic aluminum oxide templates are studied, for a selection of photon energies, as a function of their diameter and length for the first time. This was achieved by the determination of Stokes parameters of the transmitted light. The magneto-optical response is found to differ considerably from that of the bulk material. At all photon energies studied, a linear association of the Faraday rotation angle with nanowire length has been observed; moreover, a proportional relationship between rotation angle per unit length and nanowire diameter has also been also observed, consistent with our earlier work on Fe and Co nanowires. The relationship between the Faraday rotation angle per unit length with different nanowire diameters and photon energy has been found to exhibit clear spectroscopic structure.     

The catalyst-free synthesis of large-area tungsten oxide nanowire arrays on ITO substrate and field emission properties

Tungsten oxide nanowire arrays have been grown on indium tin oxide coated glass substrate using tungsten trioxide powders as source by thermal evaporation approach without any catalysts. When the O₂/Ar flow rate ratio was 1/100, large-scale, high-density and uniformly distributed tungsten oxide nanowire arrays were obtained. The morphology and structure properties of the tungsten oxide nanowires were characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. The influences of the oxygen concentration on the growth, density, shape and structure of the nanowires were investigated. The possible growth mechanism which governs the various types of nanowire arrays as the O₂/Ar flow rate ratios changed is also discussed. Field emission properties of tungsten oxide nanowire arrays were studied at a poor vacuum condition. The remarkable performance reveals that the tungsten oxide nanowire arrays can be served as a good candidate for commercial application as electron emitters.