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1.
Readily commercializable and cost‐effective next‐generation CsPbBr3 perovskite nanocrystals (PNCs) based X‐ray detectors are demonstrated. The PNCs‐based X‐ray detector exhibits higher spatial resolution (9.8 lp mm?1 at modulation transfer function (MTF) = 0.2 and 12.5–8.9 lp mm?1 for a linear line chart), faster response time (≈200 ns), and comparable stability (>40 Gyair s?1 of X‐ray exposure) compared with the commercialized terbium‐doped gadolinium oxysulfide (GOS)‐based detectors (spatial resolution = 6.2 lp mm?1 at MTF = 0.2 and 6.3 lp mm?1 for a linear line chart, response time = ≈1200 ns) because the PNCs‐based scintillator has ≈5.6‐fold faster average photoluminescence lifetime and stronger emission than the GOS‐based one.  相似文献   

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Despite the exciting progress on power conversion efficiencies, the commercialization of the emerging lead (Pb) halide perovskite solar cell technology still faces significant challenges, one of which is the inclusion of toxic Pb. Searching for Pb‐free perovskite solar cell absorbers is currently an attractive research direction. The approaches used for and the consequences of Pb replacement are reviewed herein. Reviews on the theoretical understanding of the electronic, optical, and defect properties of Pb and Pb‐free halide perovskites and perovskite derivatives are provided, as well as the experimental results available in the literature. The theoretical understanding explains well why Pb halide perovskites exhibit superior photovoltaic properties, but Pb‐free perovskites and perovskite derivatives do not.  相似文献   

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Lead halide perovskites have emerged as promising semiconducting materials for different applications owing to their superior optoelectronic properties. Although the community holds different views toward the toxic lead in these high‐performance perovskites, it is certainly preferred to replace lead with nontoxic, or at least less‐toxic, elements while maintaining the superior properties. Here, the design rules for lead‐free perovskite materials with structural dimensions from 3D to 0D are presented. Recent progress in lead‐free halide perovskites is reviewed, and the relationships between the structures and fundamental properties are summarized, including optical, electric, and magnetic‐related properties. 3D perovskites, especially A2B+B3+X6‐type double perovskites, demonstrate very promising optoelectronic prospects, while low‐dimensional perovskites show rich structural diversity, resulting in abundant properties for optical, electric, magnetic, and multifunctional applications. Furthermore, based on these structure–property relationships, strategies for multifunctional perovskite design are proposed. The challenges and future directions of lead‐free perovskite applications are also highlighted, with emphasis on materials development and device fabrication. The research on lead‐free halide perovskites at Linköping University has benefited from inspirational discussions with Prof. Olle Inganäs.  相似文献   

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Many technologically critical materials are metastable under ambient conditions, yet the understanding of how to rationally design and guide the synthesis of these materials is limited. This work presents an integrated approach that targets a metastable lead‐free piezoelectric polymorph of SrHfO3. First‐principles calculations predict that the previous experimentally unrealized, metastable P4mm phase of SrHfO3 should exhibit a direct piezoelectric response (d33) of 36.9 pC N?1 (compared to d33 = 0 for the ground state). Combining computationally optimized substrate selection and synthesis conditions lead to the epitaxial stabilization of the polar P4mm phase of SrHfO3 on SrTiO3. The films are structurally consistent with the theory predictions. A ferroelectric‐induced large signal effective converse piezoelectric response of 5.2 pm V?1 for a 35 nm film is observed, indicating the ability to predict and target multifunctionality. This illustrates a coupled theory‐experimental approach to the discovery and realization of new multifunctional polymorphs.  相似文献   

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Lead halide perovskite nanocrystals (NCs) have demonstrated great potential as appealing candidates for advanced optoelectronic applications. However, the toxicity of lead and the intrinsic instability toward moisture hinder their mass production and commercialization. Herein, to solve such thorny problems, novel lead‐free Cs2AgBiBr6 double perovskite NCs fabricated via a simple hot‐injection method are reported, which exhibit impressive stability in moisture, light, and temperature. Such materials are then applied into photocatalytic CO2 reduction, achieving a total electron consumption of 105 µmol g?1 under AM 1.5G illumination for 6 h. This study offers a reliable avenue for Cs2AgBiBr6 perovskite nanocrystals preparation, which holds a great potential in the further photochemical applications.  相似文献   

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The utilization of antiferroelectric (AFE) materials is thought to be an effective approach to enhance the energy density of dielectric capacitors. However, the high energy dissipation and inferior reliability that are associated with the antiferroelectric–ferroelectric phase transition are the main issues that restrict the applications of antiferroelectric ceramics. Here, simultaneously achieving high energy density and efficiency in a dielectric ceramic is proposed by combining antiferroelectric and relaxor features. Based on this concept, a lead‐free dielectric (Na0.5Bi0.5)TiO3x(Sr0.7Bi0.2)TiO3 (NBT‐xSBT) system is investigated and the corresponding multilayer ceramic capacitors (MLCCs) are fabricated. A record‐high energy density of 9.5 J cm?3, together with a high energy efficiency of 92%, is achieved in NBT‐0.45SBT multilayer ceramic capacitors, which consist of ten dielectric layers with the single‐layer thickness of 20 µm and the internal electrode area of 6.25 mm2. Furthermore, the newly developed capacitor exhibits a wide temperature usage range of ‐60 to 120 °C, with an energy‐density variation of less than 10%, and satisfactory cycling reliability, with degradation of less than 8% over 106 cycles. These characteristics demonstrate that the NBT‐0.45SBT multilayer ceramic is a promising candidate for high‐power energy storage applications.  相似文献   

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Despite the rapid progress in solar power conversion efficiency of archetype organic–inorganic hybrid perovskite CH3NH3PbI3‐based solar cells, the long‐term stability and toxicity of Pb remain the main challenges for the industrial deployment, leading to more uncertainties for global commercialization. The poor stabilities of CH3NH3PbI3‐based solar cells may not only be attributed to the organic molecules but also the halides themself, most of which exhibit intrinsic instability under moisture and light. As an alternative, the possibility of oxide perovskites for photovoltaic applications is explored here. The class of lead‐free stable oxide double perovskites A2M(III)M(V)O6 (A = Ca, Sr, Ba; M(III) = Sb3+ or Bi3+; M(V) = V5+, Nb5+, or Ta5+) is comprehensively explored with regard to their stability and their electronic and optical properties. Apart from the strong stability, this class of double perovskites exhibits direct bandgaps ranging from 0.3 to 3.8 eV. With proper B site alloying, the bandgap can be tuned within the range of 1.0–1.6 eV with optical absorptions as strong as CH3NH3PbI3, making them suitable for efficient single‐junction thin‐film solar cell application.  相似文献   

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Antiferroelectric materials that display double ferroelectric hysteresis loops are receiving increasing attention for their superior energy storage density compared to their ferroelectric counterparts. Despite the good properties obtained in antiferroelectric La‐doped Pb(Zr,Ti)O3‐based ceramics, lead‐free alternatives are highly desired due to the environmental concerns, and AgNbO3 has been highlighted as a ferrielectric/antiferroelectric perovskite for energy storage applications. Enhanced energy storage performance, with recoverable energy density of 4.2 J cm?3 and high thermal stability of the energy storage density (with minimal variation of ≤±5%) over 20–120 °C, can be achieved in Ta‐modified AgNbO3 ceramics. It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B‐site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected‐area electron diffraction measurements. Additionally, Ta addition in AgNbO3 leads to decreased grain size and increased bulk density, increasing the dielectric breakdown strength, up to 240 kV cm?1 versus 175 kV cm?1 for the pure counterpart, together with the enhanced antiferroelectricity, accounting for the high energy storage density.  相似文献   

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Developing environmentally friendly perovskites has become important in solving the toxicity issue of lead‐based perovskite solar cells. Here, the first double perovskite (Cs2AgBiBr6) solar cells using the planar structure are demonstrated. The prepared Cs2AgBiBr6 films are composed of high‐crystal‐quality grains with diameters equal to the film thickness, thus minimizing the grain boundary length and the carrier recombination. These high‐quality double perovskite films show long electron–hole diffusion lengths greater than 100 nm, enabling the fabrication of planar structure double perovskite solar cells. The resulting solar cells based on planar TiO2 exhibit an average power conversion efficiency over 1%. This work represents an important step forward toward the realization of environmentally friendly solar cells and also has important implications for the applications of double perovskites in other optoelectronic devices.  相似文献   

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Memristors are emerging as a rising star of new computing and information storage techniques. However, the practical applications are severely challenged by their instability toward harsh conditions, including high moisture, high temperatures, fire, ionizing irradiation, and mechanical bending. In this work, for the first time, lead‐free double perovskite Cs2AgBiBr6 is utilized for environmentally robust memristors, enabling highly efficient information storage. The memory performance of the typical indium‐tin‐oxide/Cs2AgBiBr6/Au sandwich‐like memristors is retained after 1000 switching cycles, 105 s of reading, and 104 times of mechanical bending, comparable to other halide perovskite memristors. Most importantly, the memristive behavior remains robust in harsh environments, including humidity up to 80%, temperatures as high as 453 K, an alcohol burner flame for 10 s, and 60Co γ‐ray irradiation for a dosage of 5 × 105 rad (SI), which is not achieved by any other memristors and commercial flash memory techniques. The realization of an environmentally robust memristor from Cs2AgBiBr6 with a high memory performance will inspire further development of robust electronics using lead‐free double perovskites.  相似文献   

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Long‐term instability and possible lead contamination are the two main issues limiting the widespread application of organic–inorganic lead halide perovskites. Here a facile and efficient solution‐phase method is demonstrated to synthesize lead‐free Cs2SnX6 (X = Br, I) with a well‐defined crystal structure, long‐term stability, and high yield. Based on the systematic experimental data and first‐principle simulation results, Cs2SnX6 displays excellent stability against moisture, light, and high temperature, which can be ascribed to the unique vacancy‐ordered defect‐variant structure, stable chemical compositions with Sn4+, as well as the lower formation enthalpy for Cs2SnX6. Additionally, photodetectors based on Cs2SnI6 are also fabricated, which show excellent performance and stability. This study provides very useful insights into the development of lead‐free double perovskites with high stability.  相似文献   

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Self‐assembled nanocrystal superlattices have attracted large scientific attention due to their potential technological applications. However, the nucleation and growth mechanisms of superlattice assemblies remain largely unresolved due to experimental difficulties to monitor intermediate states. Here, the self‐assembly of colloidal PbS nanocrystals is studied in real time by a combination of controlled solvent evaporation from the bulk solution and in situ small‐angle X‐ray scattering (SAXS) in transmission geometry. For the first time for the investigated system a hexagonal closed‐packed (hcp) superlattice formed in a solvent vapor saturated atmosphere is observed during slow solvent evaporation from a colloidal suspension. The highly ordered hcp superlattice is followed by a transition into the final body‐centered cubic superlattice upon complete drying. Additionally, X‐ray cross‐correlation analysis of Bragg reflections is applied to access information on precursor structures in the assembly process, which is not evident from conventional SAXS analysis. The detailed evolution of the crystal structure with time provides key results for understanding the assembly mechanism and the role of ligand–solvent interactions, which is important both for fundamental research and for fabrication of superlattices with desired properties.  相似文献   

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Creating defect tolerant lead‐free halide perovskites is the major challenge for development of high‐performance photovoltaics with nontoxic absorbers. Few compounds of Sn, Sb, or Bi possess ns2 electronic configuration similar to lead, but their poor photovoltaic performances inspire us to evaluate other factors influencing defect tolerance properties. The effect of heavy metal cation (Bi) transmutation and ionic migration on the defects and carrier properties in a 2D layered perovskite (NH4)3(Sb(1?x)Bix)2I9 system is investigated. It is shown, for the first time, the possibility of engineering the carriers in halide perovskites via metal cation transmutation to successfully form intrinsic p‐ and n‐type materials. It is also shown that this material possesses a direct–indirect bandgap enabling high absorption coefficient, extended carrier lifetimes >100 ns, and low trap densities similar to lead halide perovskites. This study also demonstrates the possibility of electrical poling to induce switchable photovoltaic effect without additional electron and hole transport layers.  相似文献   

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