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Keehoon Kang Heebeom Ahn Younggul Song Woocheol Lee Junwoo Kim Youngrok Kim Daekyoung Yoo Takhee Lee 《Advanced materials (Deerfield Beach, Fla.)》2019,31(21)
Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random‐access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo‐metal halide perovskite materials have demonstrated outstanding memory properties, such as a low‐voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single‐step spin‐coating method for fabricating unipolar resistive memory devices in a cross‐bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 108 with a relatively low operation voltage, a large endurance, and long retention times. The high‐yield device fabrication based on the solution‐process demonstrated here will be a step toward achieving low‐cost and high‐density practical perovskite memory devices. 相似文献
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Memory Devices: Resistive Switching Behavior in Organic–Inorganic Hybrid CH3NH3PbI3−xClx Perovskite for Resistive Random Access Memory Devices (Adv. Mater. 40/2015)
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Eun Ji Yoo Miaoqiang Lyu Jung‐Ho Yun Chi Jung Kang Young Jin Choi Lianzhou Wang 《Advanced materials (Deerfield Beach, Fla.)》2015,27(40):6303-6303
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Memory Arrays: Skin‐Inspired Haptic Memory Arrays with an Electrically Reconfigurable Architecture (Adv. Mater. 8/2016)
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Bowen Zhu Hong Wang Yaqing Liu Dianpeng Qi Zhiyuan Liu Hua Wang Jiancan Yu Matthew Sherburne Zhaohui Wang Xiaodong Chen 《Advanced materials (Deerfield Beach, Fla.)》2016,28(8):1526-1526
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Photonic Nanostructures: Photonic Nanostructures Patterned by Thermal Nanoimprint Directly into Organo‐Metal Halide Perovskites (Adv. Mater. 12/2017)
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Neda Pourdavoud Si Wang André Mayer Ting Hu Yiwang Chen André Marianovich Wolfgang Kowalsky Ralf Heiderhoff Hella‐Christin Scheer Thomas Riedl 《Advanced materials (Deerfield Beach, Fla.)》2017,29(12)
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Memory Devices: Eliminating Negative‐SET Behavior by Suppressing Nanofilament Overgrowth in Cation‐Based Memory (Adv. Mater. 48/2016)
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Sen Liu Nianduan Lu Xiaolong Zhao Hui Xu Writam Banerjee Hangbing Lv Shibing Long Qingjiang Li Qi Liu Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2016,28(48):10809-10809
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Memory Devices: In Situ Tuning of Switching Window in a Gate‐Controlled Bilayer Graphene‐Electrode Resistive Memory Device (Adv. Mater. 47/2015)
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He Tian Haiming Zhao Xue‐Feng Wang Qian‐Yi Xie Hong‐Yu Chen Mohammad Ali Mohammad Cheng Li Wen‐Tian Mi Zhi Bie Chao‐Hui Yeh Yi Yang H.‐S. Philip Wong Po‐Wen Chiu Tian‐Ling Ren 《Advanced materials (Deerfield Beach, Fla.)》2015,27(47):7766-7766
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Organic Light‐Emitting Devices: Instant Low‐Temperature Cross‐Linking of Poly(N‐vinylcarbazole) for Solution‐Processed Multilayer Blue Phosphorescent Organic Light‐Emitting Devices (Adv. Mater. 45/2014)
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Naoya Aizawa Yong‐Jin Pu Takayuki Chiba So Kawata Hisahiro Sasabe Junji Kido 《Advanced materials (Deerfield Beach, Fla.)》2014,26(45):7675-7675
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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)
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Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu 《Advanced materials (Deerfield Beach, Fla.)》2018,30(14)
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Switching Memory: An Optoelectronic Resistive Switching Memory with Integrated Demodulating and Arithmetic Functions (Adv. Mater. 17/2015)
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Hongwei Tan Gang Liu Xiaojian Zhu Huali Yang Bin Chen Xinxin Chen Jie Shang Wei D. Lu Yihong Wu Run‐Wei Li 《Advanced materials (Deerfield Beach, Fla.)》2015,27(17):2812-2812
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Perovskite Films: Toward All Room‐Temperature,Solution‐Processed,High‐Performance Planar Perovskite Solar Cells: A New Scheme of Pyridine‐Promoted Perovskite Formation (Adv. Mater. 13/2017)
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Hong Zhang Jiaqi Cheng Dan Li Francis Lin Jian Mao Chunjun Liang Alex K.‐Y. Jen Michael Grätzel Wallace C. H. Choy 《Advanced materials (Deerfield Beach, Fla.)》2017,29(13)