ICEM modelling of microcontroller current activity

Better prediction of electromagnetic compatibility (EMC) for components is becoming a topical demand due to technology improvements. It is requested by integrated circuit (IC) manufacturers as well as by equipment integrators. The French UTE standardisation group has proposed an EMC modelling methodology for ICs, called integrated circuit electromagnetic model (ICEM). This proposal improves and extends the IBIS standard towards conducted emission prediction (and later radiated emission) by providing additional information modelling the power network and the dynamic current activity of an IC, thus allowing the chip manufacturer to justify the package used as well as the number of power supply pins, and the equipment manufacturer to tune power supply and decoupling networks.After a brief introduction to the ICEM model and the associated methods, this article shows a way of obtaining dynamic current activity models by measuring the current consumed on the IC power supply pins. The use of ICEM for the optimisation of decoupling networks, the evaluation of power supply noise and the tuning of the surface of power and ground planes is presented for the first time with subsequent results.     

Single contact optical beam induced currents

Semiconductor industry is continuously experiencing shrinking device features and a tremendous increase in the number of transistors in an integrated circuit (IC). The application of the optical beam induced currents (OBIC) technique in ICs is more difficult and mainly limited to a few transistors near the input–output pins of an IC. The single contact optical beam induced currents (SCOBIC) is a new device and failure analysis technique, that makes it possible to perform the similar OBIC technique on many transistor including internal junction on an IC. This is done by connecting the substrate or power pins of an IC circuit to the current amplifier. In contrast, in the OBIC technique, only the junction directly connected to the current amplifier is imaged. The implementation of the SCOBIC approach is discussed and experimental results which demonstrates the SCOBIC approach is presented. Application of the SCOBIC technique from the backside of an IC, which further enhances the technique, is also discussed.     

40-Gb/s high-power modulator driver IC for lightwave communicationsystems

A monolithic integrated modulator driver with a data decision function for high-speed optical fiber links is presented. The integrated circuit (IC) was manufactured in a 0.2-μm gate length AlGaAs/InGaAs high electron mobility transistor technology with an f_T of 68 GHz. The modulator driver IC features differential configuration and operates up to 40 Gb/s with a clock phase margin of 210° and an output voltage swing of 2.9 V_p-p at each output. The maximum slew rate of the output signal is 200 mV/ps. The power dissipation of the circuit is 1.6 W using a single supply voltage of -5 V     

An efficient driving method for a high-voltage CMOS driver IC

An efficient driving method for a high-voltage CMOS driver integrated circuit (IC) is proposed. It utilises an auxiliary circuit to reduce the voltage across the data driver IC when its output stages change their status. The auxiliary circuit can reduce the power consumption and relieve the thermal problems of the driver ICs. Moreover, it has load adaptive characteristics. Power consumption was reduced by 46% at one dot on/off image pattern.     

全彩 128×160 液晶显示器驱动电路

该液晶显示器驱动电路由一个 384 通道列驱动电路和一个 160 通道行驱动电路组成.列驱动电路是一个内置 128×3×160×4 bit 显示数据存储器的 128×3 红绿蓝控制器,具有丰富的指令集,内建静态驱动电路指示不同闪速,可使用内置振荡器或输入外部时钟,液晶显示器的建立时间256级可调.行驱动电路有内建的 160 bit双向移位寄存器,支持多种显示模式,内建DC/DC升压电路,驱动电源内建/外接可选.该驱动电路是一个低功耗低输出阻抗的液晶显示控制器.     

A 500-MHz CRT video driver using a linear array

A 500-MHz monolithic video driver integrated circuit (IC) for next-generation leading CRT (cathode ray tube) displays with 4 Mpixels or more is presented. The IC has a 320-mA output current amplifier, a video gain controller, a buffered input multiplexer, and a sample-and-hold bias circuit. Using new open-loop amplifier architecture and novel complementary-bipolar circuitry design, the driver IC with bandwidth f_B of 500 MHz is fabricated. It is economically implemented by a 2.5-μm commercially available linear array with a transistor f_T of 4 GHz. Its f _B/f_T ratio (a figure of merit of the driver circuit design) is three times larger than that of the latest conventional design. The driver IC and power transistors are intended to realize a high-output (50·V_p-p), wideband (300 MHz) CRT video amplifier characterized by good output voltage stability (<1%) without high-voltage output feedback for DC restoration     

Method of dissipating heat generated in high-voltage CMOS driver IC

A method of dissipating the heat generated in a high-voltage CMOS driver IC, which is designed for use with a flat panel display, is proposed. It utilises a charge pump circuit to reduce the voltage across the driver IC when its output stages change their status. It can reduce the power consumption and relieve the thermal problems of driver ICs.     

基于MAX1968的半导体激光电源设计

作为激光器重要组成部分的激光器电源,其输出不仅要求大电流、低电压、高稳定度,而且工作脉冲频率较高(可达50 MHz)。针对此目标,设计了一种个将5 V、4 A转换为2.4 V、3.3 A恒流输出的激光器电源输出转换电路,为激光器提供稳定的电流,并通过TTL控制电路使输出频率可调。除此之外,笔者本文还讨论了一种半导体激光温度控制电路的设计方案,采用高集成、高性价比和高效率开关型驱动芯片MAX1968实现热电致冷驱动电路,能够实时监视和控制激光器温度,以稳定激光器的输出功率和波长。     

A board-mounted power supply module using a new low powerdissipation-control IC

A board-mounted power supply module for telecommunications systems is presented. The module uses a newly developed control IC to achieve higher efficiency and better compactness. The IC mainly consists of CMOSFETs to reduce power dissipation. The output driver for the main switch has been improved by regulating the swing voltage and optimizing the output-MOSFET channel width. The newly designed internal regulator in the IC has an extra input from a third winding on the transformer and supplies regulated voltage using either input. The IC consumes one-fourth of the power supply of a conventional control IC. To minimize the size of the power supply module, the IC integrates and perfectly isolates a primary circuit, a secondary circuit, a start-up, and an alarm activator using dielectric isolation. Using the IC, a 3 W power supply module with 80% efficiency is developed     

IC设计中的ESD保护技术探讨

ESD是集成电路设计中最重要的可靠性问题之一。IC失效中约有40%与ESD/EOS(电学应力)失效有关。为了设计出高可靠性的IC,解决ESD问题是非常必要的。文中讲述一款芯片ESD版图设计,并且在0.35μm 1P3M 5V CMOS工艺中验证,成功通过HBM-3000V和MM-300V测试。这款芯片的端口可以被分成输入端口、输出端口、电源和地。为了达到人体放电模型(HBM)-3000V和机器放电模型(MM)-300V,首先要设计一个好的ESD保护网络。解决办法是先让ESD的电荷从端口流向电源或地,然后从电源或地流向其他端口。其次,给每种端口设计好的ESD保护电路,最后完成一张ESD保护电路版图。     

用于SDH STM-64光发射机的GaAs PHEMT激光驱动器

介绍了用于SDH系统STM-64速率光发射机用的激光二极管/光调制器驱动器集成电路的设计。电路采用法国OMMIC公司的0.2μm GaAs PHEMTs工艺设计并制造,可以驱动激光二极管和电吸收式调制器。电路由输入匹配电路、预放大电路、源极跟随器、主放大电路、电容耦合电流放大器和输出电路组成。电路芯片面积1.0mm×0.9mm。测试结果表明,电路采用单一正5V电源供电,直流功耗1.4W,可以在10Gb/s速率下正常工作,眼图良好。最高工作速率高于20Gb/s,输出电压幅度2.8V。     

Design of adaptive dead-time control circuit for resonant half-bridge driver

To decrease the switching loss and the dead-time effect of resonant half-bridge inverter, a novel adaptive dead-time control circuit of resonant half-bridge driver Integrated Circuit (IC) is presented. Without increasing the pin number of IC, this circuit takes a novel strategy to adaptively regulate dead time to a temperate range between high and low thresholds. The high and low thresholds are adaptive to the fall time of output signal in a half-bridge clock cycle. The IC of the designed circuit is suitable for high-voltage applications. The dead-time regulation range of this circuit achieves 0–3.5?µs. The range of temperate dead-time state is 300?ns. The failure signal of this circuit can protect the IC and peripheral power devices by regulating operation in three clock cycles. Both simulation and measurement of the proposed circuit in a half-bridge driver IC with an operating frequency at 50?kHz are presented based on the 0.5?µm 700?V BCD process. The results of simulation and measurement show that the presented circuits’ performance is perfect.     

一种用于马达驱动芯片的过热保护电路

设计了一种应用于马达驱动芯片的过热保护电路。该电路主要由使能电路、基准电压源、温度检测电路、比较输出电路四部分组成。其中,温度检测电路利用PNP晶体管的发射极-基极电压具有负温度系数的特点;为了防止热振荡发生,比较输出电路采用具有磁滞功能的电压比较器。HSPICE仿真结果表明,该电路温度灵敏度高,关闭和开启温度点受电源的影响很小。     

Thermal coupling in integrated circuits: application to thermaltesting

The power dissipated by the devices of a circuit can be construed as a signature of the circuit's performance and state. Without disturbing the circuit operation, this power consumption can be monitored by temperature measurements of the silicon die surface via built-in differential temperature sensors. In this paper, dynamic and spatial thermal behavioral characterization of VLSI MOS devices is presented using laser thermoreflectance measurements and on-chip differential temperature sensing circuits. A discussion of the application of built-in differential temperature measurements as an IC test strategy is also presented     

用于LCD测试系统的程控驱动器设计

为了制作一款用于LCD测试系统的程控驱动器,采用基于嵌入式系统ARM7实现程序控制,内建DC/DC升压电路和DC/AC转换电路,以提供直流电源和产生驱动脉冲信号,电源内建/外接可选,其信号输出端按一定时序产生特定的连续脉冲, 供给LCD 屏的行列电极作驱动源, 从而使被选行与被选列交叉位置上的液晶像素或笔段在电场作用下呈现显示状态（遮光或透光） 。该系统输出的工作电压峰值、频率、占空比均可调,是一款低功耗、低输出阻抗的LCD程控驱动器。     

Anomalous latchup failure induced by on-chip ESD protection circuit in a high-voltage CMOS IC product

Latchup failure induced by electrostatic discharge (ESD) protection circuits occurred anomalously in a high-voltage IC product. Latchup issues existed at only three output pins, two of which belonged to the top and the other to the side. The layouts of top and bottom output pins are identical, and side output pins have another identical layouts. In our experiments it was found latchup of two top output pins were originated from the latchup of the side output pin, and therefore heat-induced latchup aggravation issue must be noticed during latchup test. Furthermore, large power line current (Idd) existed during triggering this side output pin and led to subsequent latchup. After thorough layout inspection, the layout of this side output pin is identical to all other side output pins except that it has an additional N-well (NW) resistor of gate-triggered high-voltage PMOS beside. It was later proved by engineering experiments that this NW resistor is the origin of inducing latchup in this product, and a new mechanism was proposed for this latchup failure. Improvements and solutions were also provided to successfully solve the latchup issues of these three output pins.     

40 Gbit/s monolithic integrated modulator driver in InP SHBT technology

A high-speed and high-gain modulator driver circuit is presented using 4-inch InP SHBT technology. The IC was developed for driving EAM modulators in 40 Gbit/s optical fibre systems. The monolithic integrated circuit features output amplitude control and output crossing point control. Measured results show the circuit operates at 40 Gbit/s with a swing of 2.5 V/sub p-p/ at each output and 9/8 ps rise/fall times. The power dissipation is 1.5 W with a standard power supply of -5.2 V.     

Silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s

A silicon bipolar laser and line driver IC with an outstanding symmetry of the (single-ended) output pulse shape is presented. The pulse shape can be optimally adjusted via only two external potentiometers, independent of operating speed and output current range. The circuit, fabricated in a 0.8 mu m self aligned double-polysilicon technology, operates up to 12 Gbit/s.<>     

High voltage output circuit using n- and n-LDMOSFET with thick gate oxide for PDP driver IC

A novel high voltage output circuit with thick-gated LDMOSFETs is proposed to reduce the chip size and to improve the switching speed for the plasma display panels (PDP) driver IC. The chip size of the PDP driver IC using the proposed output circuit is reduced by 35% with a similar falling time compared with the conventional one. The falling time of the proposed output circuit is about 2.5 times faster than that of the conventional one under the same size when the supply voltage and load capacitance are 180 V and 100 pF, respectively.