Nano-sized Thin Films Fabricated by Ion Beam Sputtering and Its Properties

Nanoscale thick amorphous Ni-Cr alloy thin films were fabricated by low-energy ion beam sputtering technology; then the as-deposited samples experienced rapid thermal process to realize the transformation from amorphous to crystalline state. The film thickness was measured with a-stylus surface profiler, the structure and the compositions of the films were confirmed by low angle X-ray diffraction and scanning auger electron microprobe respectively, and the surface topography was characterized by scanning electron microscope and scanning probe microscope. Electrical property of the films was measured by fourpoint probe. The experimental results illustrate that the combined processes of ion beam sputtering and rajid thermal process are effective for fabrication nanoscale Ni-Cr alloy thin film with good properties.     

沉积温度对ZnO薄膜结构形貌及光学性能的影响

以Zn(NO3)2·6H2O为前驱体,采用超声喷雾热解法在玻璃衬底上沉积了ZnO薄膜,采用X射线衍射(XRD)、扫描电子显微镜(SEM)、紫外光谱仪(UVS)等对所得ZnO薄膜进行表征,研究了沉积温度对ZnO薄膜的结构、微观形貌及光学性能的影响。结果表明,沉积温度为500℃时所制备的薄膜质量最佳,形成的是六角纤锌矿ZnO结构,且薄膜沿(002)晶面择优取向生长显著,薄膜表面光滑致密,晶粒细小均匀,尺寸在50~60nm。薄膜表现出良好的光学性能,可见光透过率可达87%。     

热处理对ITO薄膜的显微结构及光电特性的影响

以硝酸铟和四氯化锡为源材料,无水乙醇和乙酰丙酮为溶剂,采用溶胶—凝胶工艺制备出纳米晶ITO透明导电薄膜.采用XRD和SEM分析了薄膜的物相和显微形貌,采用面电阻测量仪和分光光度计测量了薄膜的方阻和可见光透过率.实验结果表明,随着热处理温度升高,晶化程度提高,组织逐渐均匀致密,晶粒长大,700℃热处理时薄膜晶化趋于完善.同时,方阻减小而可见光透过率增加.经过700℃热处理、厚度为400nm的ITO膜的方阻约300Ω/□,可见光透过率>80%.     

Preparation and Properties of a-Si：H Thin Films Deposited on Different Substrates

The effects of different substrates on the structure and hydrogen evolution from a-Si： H thin films deposited by plasma enhanced chemical vapour deposition were studied, as well as the similar films exposed to an hydrogen plasma. Spectroscopic ellipsometry and hydrogen evolution measurements were used to analyse the effects of the substrate and hydrogen plasma on the films microstructure, thickness, hydrogen content, hydrogen bonding and hydrogen evolution. The hydrogen evolution spectra show a strong substrate dependence. In particular on crystalline silicon substrate, the formation of bubbles was observed. For different substrates, hydrogen plasma treatments lightly affected the hydrogen evolution spectra. These results indicate that the action of hydrogen in a-Si：H was modified by the nature of the substrate.     

Effect of Ag addition on the microstructure and magnetic properties of FePt thin films

FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.     

磁性薄膜自旋重取向的机制

采用Monte Carlo方法,使用微观电子自旋模型和具有偶极相互作用的Heisenberg模型,对16×16二维平方格子的磁性系统自旋重取向现象进行了研究.发现在一定参数下,系统呈现出包含4个不同区域的磁化曲线.从理论上再现了系统从垂直磁化向面内磁化转变时的宏观磁矩的丢失现象,得到了与实验观测相一致的结果.通过计算系统的自旋组态和能量特征,对产生这种现象的机制进行了分析.     

射频磁控溅射制备的CdSe薄膜的光电学性质

采用射频磁控溅射技术在不同溅射功率下制备了CdSe薄膜,并利用X射线衍射仪(XRD)、场发射扫描电子显微镜(FESEM)、能量色散X射线光谱仪(EDAX)、紫外可见近红外(UV-VIS-NIR)分光光度计和霍尔效应测试仪研究了溅射功率对薄膜的结构和光电学性质的影响.研究表明：增加溅射功率有利于增强薄膜的结晶性能;随着溅射功率的增加,薄膜的光学带隙和电阻率逐渐减小,载流子浓度逐渐增加,即薄膜的光电性能不断增强.该研究结果可为CdSe薄膜在光电器件方面的应用提供参考.     

掺杂ZnO薄膜的微结构及电学特性

用(ZnO)1－x(Al2O3)xx=w(Al2O3)=0、0.01、0.02、0.05）陶瓷靶材为原料，通过电子束反应蒸发生长了非故意掺杂及Al掺杂的ZnO（Al掺杂ZnO）薄膜.采用X射线衍射、Raman散射及霍尔效应技术研究了薄膜的晶体微结构及电学特性.结果表明，由（ZnO)1-x(Al2O3)x(x ≤ 0.02)的靶材生长得到的Al掺杂ZnO薄膜仍具有高度c-轴取向的纤锌矿晶体结构，但随着薄膜中Al掺入量的增加，其c-轴取向性有所退化；Raman光谱测量表明，Al掺杂ZnO薄膜的本征内应力随着Al掺入量的增加而增大，（ZnO)0.98(Al2O3)0.02薄膜中Al和Zn的原子个数比为6∶94，此时薄膜的内应力已接近饱和；Al掺杂ZnO薄膜的电阻率随着Al掺入量的增加呈现先减小后增大的特征，(ZnO)0.98(Al2O3)0.02薄膜具有最小的电阻率（7.85×10－4 Ω·cm），这归因于该类薄膜同时具有高电子浓度（1.32×1021 cm-3）和较高的电子迁移率（6.02 cm2/(V·s)）.     

FePt/Ag薄膜的结构和磁性

采用直流磁控溅射在SiO2〈0001〉基片上制备了FeAg和FePt/Ag薄膜,将其在不同温度下进行真空热处理,得到具有高矫顽力的L10-FePt颗粒膜。利用X射线衍射、振动样品磁强计、扫描探针显微镜对样品的结构、磁性、形貌进行了研究。结果表明:Ag元素的添加有效地降低了FePt薄膜的有序化温度,样品在300℃热处理时即发生有序化转变。随着热处理温度的升高,样品的有序化程度提高,矫顽力变大,样品表面粗糙度减小,形成了均匀的颗粒薄膜。     

Preparation and Properties of Ag—TiO2 Thin Films on Glass SUbstrates

Ag-TiO2 thin films were prepared on glasses.The morphology and structure of Ag-TiO2 films were investigated by XRD.SEM and FT-IR.The photocatalytic and hydrophilic properties of Ag-TiO2 thin films were also evaluated by examining photocatalytic degradation dichlorophos under sunlight illumination and the change of contact angle respectively.The research results show that the Ag-TiO2 thin film is mainly composed of 20-100nm Ag and TiO2 particles,The Ag-TiO2 thin films possess a super-hydrophilic ability and higher photocatalytic activity than that of pure TiO2 thin film.     

化学液相沉积法制备AlxOy薄膜

给出了用化学液相沉积法(CLPD)制备A1xOy／Si薄膜的方法，室温下生长2h得到A1xOy／Si薄膜，其退火温度为1000℃，退火时间2h．对薄膜的显微硬度、成分和结构进行了检测和分析．结果表明，薄膜的显微硬度在退火前为5202．0N／mm^2，退火后为14533．5N／mm^2，增加近3倍；高温退火去掉了膜内的0H^-1，同时使薄膜晶化，晶体薄膜的O／A1比例为1．3．     

化学液相沉积法制备Al_xO_y薄膜

给出了用化学液相沉积法(CLPD)制备Al_xO_y/Si薄膜的方法,室温下生长2h得到Al_xO_y/Si薄膜,其退火温度为1000℃,退火时间2h。对薄膜的显微硬度、成分和结构进行了检测和分析。结果表明,薄膜的显微硬度在退火前为5202.0N/mm~2,退火后为14533.5N/mm~2,增加近3倍;高温退火去掉了膜内的OH~(-1),同时使薄膜晶化,晶体薄膜的O/Al比例为1.3。     

Microstructure and magnetic properties of granularFePt/(FePt)_(27)Ti_(73) films for ultrahigh-density recording media

1　INTRODUCTIONThe increasing demand for the areal density inmagnetic recording has driven the recording bit tosmaller dimensions, and it is necessary to decreasegrain size to 8 nm to achieve the areal density of155 Gb/cm2. However, with such small grainsize, the grain magnetization becomes thermallyunstable because of superparamagnetic limitation.In order to overcome the thermal instability, highanisotropy is most necessary because high magne tocrystalline anisotropy …     

Microwave magnetic properties of laminates with thin FeCoBSi films

The microwave permeability of laminated composites based on thin FeCoBSi films was under study.The level of permeability increased with increasing of the ferromagnetic inclusions in the laminates.The intrinsic permeability spectra of ferromagnetic inclusion are parametrically reconstructed.The obtained parameters of magnetic resonance were specially analyzed.To avoid the effect of eddy current and to obtain large-volume fractions of ferromagnetic constituent,laminates consisting of alternating FeCoBSi/SiO2 multi-layers and mylar substrates were also investigated.For the same volume fractions of ferromagnetic constituent (8.7%),laminates based on multi-layered films are found to possess higher values of permeability than those based on one-layered films.     

Sputtering preparation and magneto-optical properties of GdTbFeCo thin films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target.The influences of sputtering parameters on the magneto-optical properties GdTbFeCo thin film were investigated by the variable control method.And the influence mechanism was analyzed in detail.After the sputtering parameters were optimized,it was found that when the distance between target and substrate was 72 mm,the thin film thickness was 120 nm,and the sputtering power,sputtering pressure and sputtering time was 75 W,0.5 Pa and 613 s,respectively,the coercivity with perpendicular anisotropy could be as high as 6735 Oe,and the squareness ratio of the hysteresis loop was almost equal to 1.     

Preparation and Properties of IrO2 Thin Films Grown by Pulsed Laser Deposition Technique

Highly conductive IrO2 thin films were prepared on Si （100） substrates by means of pulsed laser deposition technique from an iridium metal target in an oxygen ambient atmosphere. Emphasis was put on the effect of oxygen pressure and substrate temperature on the structure, morphology and resistivity of IrO2 films. It was found that the above properties were strongly dependent on the oxygen pressure and substrate temperature. At 20 Pa oxygen ambient pressure, pure polycrystalline IrO2 thin films were obtained at substrate temperature in the 300-500℃ range with the preferential growth orientation of IrO2 films changed with the substrate temperature. IrO2 films exhibited a uniform and densely packed granular morphology with an average feature size increasing with the substrate temperature. The room-temperature resistivity variations of IrO2 films correlated well with the corresponding film morphology changes. IrO2 films with the minimum resistivity of （42 ±6）μΩ·cm was obtained at 500℃.     

Low Temperature Coating of Anatase Thin Films on Silica Glass Fibers by Liquid Phase Deposition

Uniform crystalline TiO2 thin films were coated on silica glass fibers by liquid phase deposition from aqueous solution of ammonium hexafluorotitanate at low temperature. TiO2 thin films and nanopowders were prepared by adding H3BO3 into （NH4）2TiF6 solution supersaturated with anatase nano-crystalline TiO2 at 40 ℃. The effects of the deposition conditions on the surface morphology, section morphology, thickness of the deposited TiO2 thin films were investigated. The results indicate that the growth rate and particle size of the thin films were controlled by both the deposition conditions and the amount of anatase nano-crystalline TiO2.     

Preparation and Properties of CdTe Polycrystalline Films for Solar Cells

The structure and characteristics of CdTe thin filrns are closely dependent on the whole deposition process in close-space sublimation （CSS）. The physical mechanism of CSS was analyzed aud the temperature distribution in CSS system was measured, and the influences of the increasing-temperature process and pressure on the preliminary nucleus creation were studied. The resuits indicate ： tire samples deposited at different pressures hare a cubical structure of CdTe and the diffraction peaks of CdS and SnO2 ： F. As the atmosphere pressure increases, the crystal size of CdTe decreases, the rate of the transparency of the thin film decreases and the absorption side moves towards the short-wave direction. After a 4-minute depositing process with a substrate teraw.rature of 500℃ and a source temperature of 620 ℃, the polycostallinc thin films can be mmade , so the production of high-quality integrated cell with StrO2： F/ CdS/ CdTe/ Au structure is hopeful.