快速热处理的[Fe/Pt]n薄膜的结构和磁性

采用直流磁控溅射方法在Si基片上制备[Fe/Pt]_n薄膜,利用X射线荧光光谱仪(XRF)、X射线衍射仪(XRD)和振动样品磁强计(VSM)分析薄膜的组分、结构和磁性。研究结果表明：[Fe/Pt]_n薄膜经过600 ℃快速热处理,得到了L1₀-FePt薄膜。对于[Fe (x nm)/Pt (0.5 nm)]_n薄膜,当Fe层厚度为0.7 nm时,薄膜的有序度最大,平行膜面和垂直膜面的矫顽力均最高;对于不同调制周期的[Fe/Pt]_n薄膜,有序度随调制周期先增大后减小,平行膜面的矫顽力均高于垂直膜面的矫顽力,当调制周期为2.4 nm时,薄膜平行膜面的矫顽力最大。     

Microstructure and magnetic properties of granularFePt/(FePt)_(27)Ti_(73) films for ultrahigh-density recording media

1　INTRODUCTIONThe increasing demand for the areal density inmagnetic recording has driven the recording bit tosmaller dimensions, and it is necessary to decreasegrain size to 8 nm to achieve the areal density of155 Gb/cm2. However, with such small grainsize, the grain magnetization becomes thermallyunstable because of superparamagnetic limitation.In order to overcome the thermal instability, highanisotropy is most necessary because high magne tocrystalline anisotropy …     

Sputtering preparation and magneto-optical properties of GdTbFeCo thin films

Amorphous GdTbFeCo magnetic thin films were successfully prepared on glass substrates by RF magnetron sputtering system from a mosaic target.The influences of sputtering parameters on the magneto-optical properties GdTbFeCo thin film were investigated by the variable control method.And the influence mechanism was analyzed in detail.After the sputtering parameters were optimized,it was found that when the distance between target and substrate was 72 mm,the thin film thickness was 120 nm,and the sputtering power,sputtering pressure and sputtering time was 75 W,0.5 Pa and 613 s,respectively,the coercivity with perpendicular anisotropy could be as high as 6735 Oe,and the squareness ratio of the hysteresis loop was almost equal to 1.     

Effect of Change in Thickness of Ag Toplayer on the Structure and Magnetic Properties of FePd Films Grown on Glass Substrate

A series of FePd based alloy films were deposited on glass substrates by DC magnetron sputtering. The Ag toplayer effect was studied using FePd(67.5 nm)/Ag(3.875, 7.75, 15.50, 31 and 38.75 nm) films annealed at 600 ℃ for different time in order to find the role of the Ag toplayer in disorder-order of FePd film. The results show that the Ag toplayer can accelerate the phase transition from FCC to FCT in films. The magnetic easy axis of the crystallites in this film is in-plane of substrate. The Ag toplayer can greatly enhance the coercive of FePd films. When the thickness of Ag is equal to 31 nm, the film has a very large in-plane coercivity of 2.8 kOe and a very low out-of-plane coercivity of 1.04 kOe.     

Fe_xPt_(100-x)薄膜的磁性能研究

用直流磁控溅射方法和原位退火工艺在玻璃基片上制备了FexPt100-x纳米膜.研究发现Fe含量对FePt纳米膜的磁特性有很大的影响.矫顽力和△H随Fe含量的增加而增大.当x=48时,矫顽力Hc达到了1040 kA/m,样品出现很好的有序化L10织构;△H取得最大值,颗粒间相互作用最小.FexPt1-x薄膜的矩形比S随着x的增加而增大,x>46时S值接近1,在一定程度上表明了此时读出信号强度较大;开关场分布SFD的变化情况刚好与此相反,Fe48Pt52获得的SFD值近似等于0.8,说明转变位置波动弱,来自转变的信号噪音低.     

快速循环热处理对(Co0.35Fe0.65)99O1薄膜磁性能的影响

针对(Co0.35Fe0.65)99O1薄膜,研究了两种不同热处理工艺对其磁性能的影响。结果表明:快速循环热处理可以改善高磁矩(Co0.35Fe0.65)99O1薄膜磁性能,在450℃几个快速循环热处理后,沉积薄膜的矫顽力从105下降到3 Oe,电阻率下降到70%,a-Fe (Co)相晶粒尺寸可以减小到15~35 nm,该处理方法较以往的热处理更能改善软磁薄膜的性能。     

FePt/Ag薄膜的结构和磁性

采用直流磁控溅射在SiO2〈0001〉基片上制备了FeAg和FePt/Ag薄膜,将其在不同温度下进行真空热处理,得到具有高矫顽力的L10-FePt颗粒膜。利用X射线衍射、振动样品磁强计、扫描探针显微镜对样品的结构、磁性、形貌进行了研究。结果表明:Ag元素的添加有效地降低了FePt薄膜的有序化温度,样品在300℃热处理时即发生有序化转变。随着热处理温度的升高,样品的有序化程度提高,矫顽力变大,样品表面粗糙度减小,形成了均匀的颗粒薄膜。     

磁控溅射Co1-x-Ptx薄膜晶体的结构与磁性能

通过磁控溅射制备了一系列不同成分的Co-Pt二元合金薄膜,并利用振动样品磁强计（VSM）和X-射线衍射技术（XRD）研究了Pt含量对薄膜磁性能和晶体结构的影响.结果表明：Pt的摩尔分数在0-28.5%范围内,薄膜均为密排六方结构（HCP）;Co-Pt薄膜的晶格常数（c,a）随Pt含量的增加呈线性增大趋势,但其c/a的值却先减小后增大;矫顽力则先增大后减小,在Pt的摩尔分数为20%时达到最大值（156.89 kA/m）;饱和磁化强度随Pt含量的增加而单调减小.     

Structures and properties of [CoPt/Ag]_n multilayer films

In recent years there has been considerable interest in atomically ordered L10-CoPtfilms as potential materials for ultrahigh density magnetic recording (UDMR) media[1].The L10 phase CoPt alloy has high anisotropy constant of 107—108 erg/cm3, which is ofcrucial importance for UDMR media with a small grain size below 10 nm, because highmagnetocrystalline anisotropy is needed to create a barrier to thermally activatedswitching of the magnetization[2, . The as-deposited CoPt film with equi…     

CoPt合金纳米有序阵列的制备及磁学特性

采用电化学沉积法,在氧化铝模板中制备了φ50 nm的CoPt合金纳米线的高度有序阵列.纳米线结构和磁学特性分别用透射电子显微镜、扫描电子显微镜、X射线衍射仪和振动样品磁力计测试.结果表明,CoPt合金纳米线以fcc结构存在.当外加磁场与纳米线线轴平行时,测得的矫顽力为192 Ka/m,剩磁比为0.75;当外加磁场与纳米线线轴垂直时,所测得的矫顽力仅为48 Ka/m,剩磁比为0.25.表明纳米线阵列具有明显的各向异性,纳米线的易轴方向为其线轴方向.     

纳米针状金刚石膜的制备

利用高功率微波等离子体化学气相沉积方法在硅衬底上沉积了多晶金刚石薄膜,然后利用电子束蒸发方法在金刚石薄膜表面上沉积了5 nm厚的Pt薄膜.利用Pt的自组织化效应,再通过氢等离子体照射、氧等离子体刻蚀、王水处理等手段,使金刚石薄膜表面形成了纳米针.利用拉曼光谱和扫描电子显微镜(SEM)表征金刚石薄膜的结构,拉曼光谱显示在1 315 cm^-1处出现纳米金刚石特征峰,SEM显示纳米针均匀地直立在金刚石薄膜表面,每平方厘米大约含有10⁸个纳米针,纳米针的平均高度约为1 μm.     

Thickness Dependence of Structural and Optical Properties of Chromium Thin Films as an Infrared Reflector for Solar-thermal Conversion Applications

The thermal emittance of Cr film, as an IR reflector, was investigated for the use in SSAC. The Cr thin films with different thicknesses were deposited on silicon wafers, optical quartz and stainless steel substrates by cathodic arc ion plating technology as a metallic IR reflector layer in SSAC. The thickness of Cr thin films was optimized to achieve the minimum thermal emittance. The effects of structural, microstructural, optical, surface and cross-sectional morphological properties of Cr thin films were investigated on the emittance. An optimal thickness about 450 nm of the Cr thin film for the lowest total thermal emittance of 0.05 was obtained. The experimental results suggested that the Cr metallic thin film with optimal thickness could be used as an effective infrared reflector for the development of SSAC structure.     

衬底效应对LiTaO3薄膜制备的影响

用溶胶凝胶法在N型硅、P型硅、石英、铂、镍衬底上制备了钽酸锂(LiTaO3)薄膜,用XRD和SEM对钽酸锂薄膜性能参数进行了表征;发现掺杂少量环氧树脂能提高钽酸锂薄膜的均匀性,改善薄膜与衬底的粘附性;研究了衬底效应与薄膜厚度的关系,薄膜厚度超过0.2 μm,Ni衬底的XRD峰值强度几乎不再出现,说明衬底对薄膜初始结晶取向有重要影响;利用不同衬底上生长钽酸锂薄膜,XRD研究结果表明:N型硅、P型硅、石英衬底上只能制备多晶钽酸锂薄膜,铂衬底上制备的钽酸锂薄膜在(012)晶向有强大的择优取向性,镍衬底上制备的钽酸锂薄膜有更好的C轴择优取向性,C轴择优取向系数可达0.082。     

直流磁过滤电弧源沉积氧化钛薄膜的光学特性

为了探索电弧源离子镀技术制备的氧化钛薄膜的透射率、消光系数和折射率,利用直流磁过滤电弧源在K9玻璃基底上制备了氧化钛薄膜,通过分光光度计和椭偏仪对薄膜的透射率、折射率和消光系数等光学特性和沉积速率进行分析研究.研究结果表明：波长在400～700nm之间,氧化钛薄膜的折射率为2.3389～2.1189;消光系数在10-3数量级上,消光系数小,薄膜吸收小,薄膜峰值透射率接近K9基底的透射率;沉积时间30min,薄膜的厚度是678.2nm,电弧源离子镀技术沉积氧化钛薄膜的平均速率为22.6nm/min.     

Pd/V_2O_5薄膜的氢气敏感性质研究

采用磁控溅射法制备了不同厚度的Pd/V2O5双层复合薄膜,采用紫外-可见光分光光度计研究了薄膜的氢气敏感性质,原位测量了薄膜的激光拉曼光谱并分析了薄膜的氢气敏感机理。结果表明,复合薄膜V2O5(280 nm)/Pd(30nm)对氢气的敏感性质较好,对0.01%H2-N2有响应,在4%H2-N2标气中,在560 nm处透过率的相对变化值达到25%。拉曼光谱分析结果表明,Pd/V2O5薄膜在与氢气作用过程中,Pd膜主要起催化作用,氢原子扩散到V2O5层,V5+转变为V4+,导致Pd/V2O5薄膜的透过率发生变化。     

Microstructures and magnetic properties of [SiO2/FePt]5/Ag thin films

[SiO2/FePt]5/Ag thin films were deposited by RF magnetron sputtering on the glass substrates and post annealing at 550 ℃ for 30 min in vacuum. Vibrating sample magnetometer and X-ray diffraction analyser were applied to study the magnetic properties and microstructures of the films. The results show that without Ag underlayer [SiO2/FePt]5 films deposited onto the glass are FCC disordered; with the addition of Ag underlayer [SiO]FePt]5/Ag films are changed into L10 and （111） mixed texture. The variation of the SiO2 nonmagnetic layer thickness in [SiO2/FePt]5/Ag films indicates that SiO2-doping plays an important role in improving the order parameter and the perpendicular magnetic anisotropy, and reducing the grain size and intergrain interactions. By controlling SiO2 thickness the highly perpendicular magnetic anisotropy can be obtained in the [SiO2 （0.6 nm）/FePt （3 nm）]5/Ag （50 nm） films and highly （001）-oriented films can be obtained in the [SiO2 （2 nm）/FePt （3 nm）]5/Ag （50 nm） films.     

Effect of Ag addition on the microstructure and magnetic properties of FePt thin films

FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.     

Structures and properties of [CoPt/Ag]<Subscript><Emphasis Type="Italic">n</Emphasis></Subscript> multilayer fims

The magnetic properties and structures of [CoPt/Ag] _n , multilayer films deposited by DC magnetron sputtering have been studied. During the deposited process, two kinds of deposited sequences, that is Ag layer (FDAG) first deposited or CoPt layer (FDCP) first deposited, have been chosen. The results show that the microstructures and coercivities were strongly influenced by the deposited sequence and the thickness of films. The coercivities of [Ag/CoPt] _n with FDAG are obviously higher than those of [CoPt/Ag] _n with FDCP. Especially, when the thickness of films is 8 nm, the difference of coercivities between the FDAG film and the FDCP film is the largest. It is possibly because Ag plays a role of underlayer in FDAG multilayers, which can induce both the transformation from fcc to fct and the oriented growth along c-axis. In addition, δM curves reveal that the [CoPt/Ag]₈ multilayer, film has a lower intergrain interaction than the CoPt/Ag bilayer film.     

直流磁过滤电弧源制备银膜的工艺参数研究

为了探索电弧离子镀技术制备银薄膜中相关的工艺参数,利用直流磁过滤电弧源在K9玻璃和硅片上制备了银膜,通过白光干涉仪和剥离实验对所制备银膜的厚度、表面粗糙度和附着力进行检测,分析靶电流、基片偏压和过渡层对银薄膜沉积速率、粗糙度及附着力等特性的影响．实验结果表明：当靶电流为90．0A时,沉积速率为1．84nm／s,在偏压为＋10V时,得到膜层粗糙度为0．5355nm;利用过渡层的辅助,通过电弧离子镀有效地提高了银膜的附着力．     

Preparation of ZAO film by low-temperature hydrothermal approach and its electrical property

Al-doped ZnO (ZAO) films were successfully deposited on the surface of common glasses by using low-temperature hydrothermal approach. In the reaction solution, the molar ratio of Al3+ to Zn2+ was 1∶100, the annealing temperature and time were 200 ℃ and 2-6 h, respectively. The structure of the thin films was identified by X-ray diffraction (XRD), the surface morphology and thickness of the thin films were observed by scanning electron microscopy (SEM), and the electrical performance of the thin films was measured by four-point probes. It was shown that the films with an average particle size of 27.53 nm had a preferential orientation along (002), Al3+ had replaced the position of Zn2+ in the lattice without forming the Al2O3 phase and its thickness was 20-25 μm. With the increased annealing time, the intensity of diffraction peaks was decreased, the film exhibited irregular surface morphology gradually, and the resistivity of ZAO films was increased. The lowest resistivity obtained in this study was 3.45×10-5Ω·cm.