HEMT太赫兹探测器的二维电子气特性分析

采用分子束外延技术(MBE)对GaAs/Al_xGa_(1-x)As二维电子气(2DEG)样品进行了制备,样品制备过程中,通过改变Al的组分含量、隔离层厚度、对比体掺杂与δ掺杂两种方式,在300 K条件下对制备的样品进行了霍尔测试,获得了室温迁移率7.205E3cm~2/Vs,载流子浓度为1.787E12/cm~3的GaAs/Al_xGa_(1-x)As二维电子气沟道结构,并采用Mathematica软件分别计算了不同沟道宽度时300 K、77 K温度下GaAs基HEMT结构的太赫兹探测响应率,为HEMT场效应管太赫兹探测器的研究和制备提供了参考依据.     

InSb光电导太赫兹源材料性质及辐射场研究

为了研究锑化铟(InSb)半导体材料光电导太赫兹辐射过程,用数值计算方法分析材料内载流子迁移率和表面电流,以及不同性质抽运激光器对太赫兹波近场强度的影响,用宏观电磁场理论和微观半导体理论分析材料表面电流,比较了InSb和GaAs材料的太赫兹波功率谱曲线。结果表明,InSb材料载流子弛豫时间越长,载流子迁移率越大;表面电流与载流子寿命和弛豫时间成正比;宏观电磁场理论更适于分析表面电流;抽运激光饱和能量密度越大,太赫兹近场辐射强度越强;抽运激光脉冲宽度越短,太赫兹近场辐射强度越强;InSb光电导辐射太赫兹波功率比GaAs高。该结果为基于InSb光电导太赫兹辐射源的研究奠定了一定的基础。     

砷化镓p-i-n结构中的干扰效应对太赫兹波产生的影响与优化

基于超短激光脉冲泵浦砷化镓（GaAs）p-i-n异质结结构产生太赫兹辐射模型，通过数值模拟和理论分析，研究了干扰效应对产生太赫兹辐射的影响，以及i层厚度与干扰效应之间的相关性。结果显示，干扰效应会降低太赫兹脉冲的强度并使其频谱展宽，而且随着i层厚度的增加干扰效应的影响也在增加，该结果与已有的蒙特卡罗模拟结果相近。数值实验表明，超短激光泵浦GaAs p-i-n结构产生太赫兹脉冲源自于该结构中i层内的载流子振荡，且太赫兹脉冲特性依赖于载流子的浓度分布，干扰效应的影响以及载流子浓度分布依赖于i层厚度。     

结构对太赫兹超材料光调控特性的影响

利用光泵浦太赫兹探测系统研究了3个基于开口谐振环的超材料的光调制性质。结果表明:当太赫兹波的电场矢量平行于超材料底边,设计太赫兹超材料时,需要避免对称性样品的中间条等长。然而,非对称性的样品存在耦合和劈裂现象。由于不同的共振机制,低频LC共振对光较为敏感。虽然样品由于设计结构的区别使得各自共振峰位有所不同,但它们对光所呈现出的调制特性是相同的。即当太赫兹波的电场矢量平行于超材料两侧的边时,由于结构的原因在透射谱中只有一个透射凹陷,此透射凹陷表现为偶极共振且该偶极共振特性对光激励不敏感。     

基于氧化钼薄膜的光控太赫兹传输特性研究

本文采用热蒸发法制备了沉积在硅片上的200nm 氧化钼(MoO₃)的太赫兹调制薄膜。 在室温条件下,通过傅里叶光谱仪和太赫兹时域光谱系统(THz-TDS)技术,研究了MoO₃薄膜在不同激励光功率下的太赫兹传输特性。提出了薄膜重要光学参数的提取模型,利用透 射式太赫兹时域光谱技术测量了薄膜的时域信号,分别计算了太赫兹波在薄膜中的透过率及 调制效率及薄膜的复介电常数变化。结果表明,在980 nm激光器条件 下,随着激光器功率 的提高,MoO₃薄膜的太赫兹调制深度逐渐增加。在激光功率为266 mW时,在0.26 THz处 透过率达到最低为61%,调制效率(Modulation factor)达到最高为10%。通过分析MoO₃薄膜 的复介电常数及载流子密度变化,得出了激发生成的载流子浓度的提高导致介电常数的改变 , 增强了薄膜的导电性,从而减低了太赫兹波在薄膜中的透过率的结论。为MoO₃薄膜应用在 太赫兹波段调制领域提供了实验数据。     

GaAs样品对太赫兹微带线频谱特性的影响

太赫兹片上系统是近年来太赫兹研究的热点,是太赫兹系统集成的关键技术。太赫兹微带线（MSL）是太赫兹片上系统的关键,微带线设计的合理性,直接影响着太赫兹片上系统的灵敏度和准确度,为了更好地制作片上系统,以理论模型为参照,利用HFSS（High Frequency Structure Simulator）软件对太赫兹传输线及带阻滤波结构进行了系统的仿真研究。首先研究了微带线结构、微带带阻滤波结构的传输特性,并从应用的角度首次将样品引入仿真模型,研究了以GaAs为例的介电样品对微带滤波结构的滤波特性的影响。设计了358 GHz的微带滤波器结构,并通过改变放置在其上的GaAs样品参数,发现样品对微带滤波结构的中心滤波频率有明显影响。为太赫兹微带线的设计制作提供了精确的理论数据。     

GaAs/AlGaAs异质结的微波调制反射谱

基于搭建的微波调制反射谱测量系统(MMRS),确定了GaAs/AlGaAs异质结构中价带空穴到二维电子系统(2DES)电子基态(GS)的跃迁.微波调制反射谱与温度的依赖关系表明,随着测量温度的升高,能带带隙发生了蓝移现象;而其与磁场的依赖关系表明,随着测量磁场的增大,能带带隙则发生了红移现象;它们均与GaAs/AlGa...     

太赫兹探测用GaAs MESFET Ⅰ-Ⅴ特性模拟计算

Ⅲ-Ⅴ族化合物半导体材料GaAs,由于其本征载流子浓度比Si约低104,电子迁移率约是Si的5倍,电阻率高达108 Ωcm,有利于降低寄生电容,减少漏电流;另外,GaAs材料便于加工,可方便地实现大规模集成,适用于制作MESFET器件.目前用于太赫兹探测的GaAs MESFET在国际上有了较大的发展,为了进一步研究ME...     

一种太赫兹微流控芯片

很多生物大分子和糖类的特征振动模式恰好位于太赫兹频段内,使得太赫兹成为一种有潜力的生物化学传感工具。水对于生物分子发挥其功能有着至关重要的作用,而由于水对太赫兹辐射有极强的吸收性,研究液体样品的太赫兹透射谱很难。设计了一款太赫兹微流控芯片,以石英片作为基底,利用光刻技术在石英片上制作出高度50 μm的微流通道,从而减少水的吸收;聚二甲基硅氧烷(PDMS)作为盖膜与石英片键合后打孔。分别在太赫兹时域光谱系统中测量了芯片的透过率、水的吸收系数以及折射率,在透过率高于30%的0.2 THz~1 THz频段内水的吸收系数没有明显峰值出现,且随着频率的增加而单调递增,与前期考察结果一致。此微流控芯片有潜力用于液体在0.2 THz~1 THz频段内的光谱测量,实现对小剂量生物化学液体样品的实时、无标记传感。     

基于温敏介质的温控太赫兹波带阻滤波器研究

采用对温度敏感的锑化铟(InSb)材料做基底设计了一种温控太赫兹波带阻滤波器。通过控制外部温度的高低来改变锑化铟基底的相对介电常数,从而实现对太赫兹波滤波器中心工作频率点的动态调节。计算结果表明,当温度由140 K增加到200 K时,该滤波器的中心频率从0.920 THz增加到1.060 THz,向高频方向移动了0.140 THz,且中心频率点的透射参数均小于–20 dB,获得良好的可调带阻滤波功能。     

Enhancement of solar cells parameters by periodic nanocylinders

Optical absorption in thin-film solar cells can be improved by using surface plasmons for guiding and confining the light on the nanoscale. We report theoretical and simulation studies of a-Si thin-film solar cells with silver nanocylinders on the surface. We found that surface plasmons increased the cells'' spectral response over almost the entire studied solar spectrum. In the ultraviolet range and at wavelengths close to the Si band gap we observed a significant enhancement of the absorption for both thin-film and wafer-based structures. We also performed optimization studies of particle size, inter-particle distance, and dielectric environment, for obtaining maximal absorption within the substrate. A blue-shift of the resonance wavelength with increasing inter-particle distance was observed in the visible range. Cell performance improved at optimal spacing, which strongly depended on the nanoparticle size. Increasing the nanocylinder size was accompanied by the widening of the plasmon resonance band and a red-shift of the plasmon resonance peaks. A weak red-shift and plasmon peak enhancement were observed in the reflectance curve with increasing refractive index of the dielectric spacer.     

Temperature-Dependent Refractive Index of Quartz at Terahertz Frequencies

Characterisation of materials often requires the use of a substrate to support the sample being investigated. For optical characterisation at terahertz frequencies, quartz is commonly used owing to its high transmission and low absorption at these frequencies. Knowledge of the complex refractive index of quartz is required for analysis of time-domain terahertz spectroscopy and optical pump terahertz probe spectroscopy for samples on a quartz substrate. Here, we present the refractive index and extinction coefficient for α-quartz between 0.5 THz and 5.5 THz (17–183 cm^??1) taken at 10, 40, 80, 120, 160, 200 and 300 K. Quartz shows excellent transmission and is thus an ideal optical substrate over the THz band, apart from the region 3.9 ± 0.1 THz owing to a spectral feature originating from the lowest energy optical phonon modes. We also present the experimentally measured polariton dispersion of α-quartz over this frequency range.     

基于超材料的连续太赫兹波透射特性研究

以基于超材料的太赫兹波透射为目的,设计并制作了四种亚波长开环共振（SRR）超材料。采用连续太赫兹波作为入射激光源,实验测量了它们在1.04 ~4.25 THz波段的功率透射属性,并采用CST Studio进行仿真,结果显示这些超材料存在一个位于2.52 THz的全局透射峰和多个局部透射峰。全局透射峰与SRR阵列的微结构和图形配置等参数有关。为了寻找一个具有较高透射效率的太赫兹感应阵列,比较了四种不同超材料微结构的归一化功率透射性能和感应差别。从这些差别中找到特定图案配置的超材料器件用于太赫兹波感应具有借鉴意义。     

基于亚波长金属孔阵列的光控太赫兹强度调制器

太赫兹波强度调制器对太赫兹技术的发展至关重要。亚波长金属孔阵列可以激发表面等离子激元,增加入射电磁波的透射效率,极大地提高调制器的调制深度。提出了一种基于表面等离子激元的光控太赫兹波强度调制器。首先给出了器件所依赖的基本原理;其次利用传统的微纳加工技术在半绝缘砷化镓衬底上制作出二维亚波长金属孔阵列;最后搭建了太赫兹时域光谱系统,测试了器件样品对太赫兹波的透过率。结果表明:亚波长金属孔阵列可以引起透射率的异常增强,且透射率随着泵浦光强的增大而减小,在特定频率点实现了较高的调制深度。此研究为实现高调制深度的太赫兹波强度调制器提供了参考。     

Gangbuster frequency selective surface metamaterials in terahertz band

Frequency selective surfaces using Ag dipole antenna elements have been simulated, fabricated and tested to demonstrate improved narrowband transmission compared to the current state of the art in the 1?2 THz. Several designs are presented including variations in dipole packing density, and sensitivity to a cladding layer. The sharpest resonant response was measured to have a bandwidth of 90 GHz at a centre frequency of 1.3 THz, for a Q of 14.5, which is the highest thus far reported for a terahertz narrowband filter. In addition, the sensitivity of the resonance of the structures to material properties may be exploited as a way to measure the permittivity and loss tangent of thin films in the terahertz band.     

动态可调的太赫兹超构表面

近年来,采用人工设计金属阵列的超构表面以实现对太赫兹波的调制受到越来越广泛的关注。设计了2种互补的亚波长金结构阵列超构表面,正、反结构2个超构表面对太赫兹波均有共振响应。利用光泵浦太赫兹时域透射光谱系统,通过控制泵浦光实现对太赫兹波的谱调制。仅需28 mW的外加泵浦光,反结构超构表面在0.91 THz处的振幅调制深度可达到95%。利用该反结构超构表面对太赫兹波的开关作用,进一步设计了太赫兹振幅全息图,希望利用该结构实现太赫兹波前的动态调控。初步的理论模拟验证了这一方法的可行性,可较好地实现对太赫兹波的动态调控。     

多壁碳纳米管薄膜在THz波段的传输与偏振特性

利用化学气相沉积法制备了三种类型多个超有序排列的多壁碳纳米管薄膜样品,通过太赫兹时域光谱技术,获取相位和振幅信息,详细研究了薄膜在太赫兹波段的传输特性。结果表明:超有序多壁碳纳米管薄膜在纳米管轴向方向与垂直于轴向方向表现出明显的光、电各向异性特性;测试的介电常数实部为负,虚部为正,证实了制备的薄膜具有金属性;薄膜具有的各向异性为研究其偏振特性提供了直接证据,随着薄膜厚度的增加,偏振度和消光比增加,其9 m厚的自由薄膜度可以获得99%的偏振度。研究结果对开展超有序多壁碳纳米管薄膜在太赫兹偏振器、调制器与光开关等领域的研究有重要指导意义。     

The Extraordinary Transmission Spectrum in Terahertz Regime: Combination of Shape Resonances and Rayleigh anomalies

We present the Terahertz wave extraordinary transmission through thin metal film with periodic arrays of subwavelength rectangular holes. By designing metallic hole arrays with different periods along x and y direction, the transmission spectrum with a non-Fano type is obtained. The roles of shape resonances and Rayleigh anomalies in extraordinary transmission are clarified. Our results demonstrate that the enhanced transmission can be attributed to the shape resonance, and the position of transmission minimum comes from the Rayleigh anomaly which is related to the period of the holes array. Shape resonance in hole arrays is different from the classical waveguide resonance, instead, the resonance behaves a surface plasmon polariton-like character but it is irrelevant to the period of the hole arrays. Our finding is applicable to exploit terahertz field localization which can be used to study terahertz nonlinear spectroscopy of materials.     

Terahertz Emission from GaAs Films on Si(100) and Si(111) Substrates Grown by Molecular Beam Epitaxy

We report on the terahertz emission from femtosecond-laser-irradiated GaAs layers grown on Si(100) and Si(111) substrates. The results show that the terahertz emission from GaAs on Si is stronger than that of a semi-insulating bulk GaAs crystal. This increase is attributed to the strain field at the GaAs/Si interface. In the GaAs of the Si(100) sample, the stronger terahertz emission is observed compared with GaAs on Si(111). Moreover, the effect of changing the doping type of the Si substrate from n-type to semi-insulating was also studied and it was found that the terahertz emission intensity of GaAs on semi-insulating Si(100) is stronger than that of GaAs on n-type Si(100). Finally, strong terahertz emission from GaAs on semi-insulating Si(100) was observed not only in the reflection geometry but also in the transmission geometry. These results hold promise for new applications of terahertz optoelectronics.     

High-throughput fabrication of <Emphasis Type="Italic">infinitely</Emphasis> long 10 nm slit arrays for terahertz applications

In pursuit of higher field enhancement and applications in terahertz frequency regime, many techniques have been developed and reported for fabrication of high-aspect-ratio metallic nanostructures. While techniques utilizing spacer deposition has successfully overcome the size limit of conventional fabrication tools, they suffer from low throughput or vulnerability to mechanical and chemical treatment, limiting their further application to various fields. In this Letter we report a high-throughput scheme for fabricating metallic gap structures, free from all the aforementioned shortcomings. Vertically aligned gaps are first defined with photolithography and atomic layer deposition, and then made suitable for transmission measurements by etching out predefined sacrificial layers. Existence of the sacrificial layers alleviates many requirements associated with fabrication steps, thereby increasing the overall reliability of the whole process. Using this method we fabricate arrays of 10 nm wide metallic slits whose length is only limited by the substrate size, here 1 cm, and then characterize the sample with terahertz time domain spectroscopy. The sample show steady performance of up to 2500-fold field enhancement even after sonication under various solvents.