梯形截面硅基垂直多槽纳米线定向耦合器全矢量分析

采用一种基于三电场分量的全矢量有限元法,其中引入了完善匹配层(PML)吸收边界条件,分析由梯形截面硅基垂直多槽纳米线构成的平行定向耦合器.考虑了波导侧壁倾角、耦合波导间距、槽宽及槽折射率的变化对定向耦合器性能的影响.给出了准TE与准TM偶、奇模有效折射率、耦合长度及模场分布,揭示了其模式的混合特性及模场分布特点.分析结果表明,恰当选择结构参数及材料参数,可实现两偏振态下相同耦合长度,定向耦合器在偏振无关条件下工作.     

基于金属周期槽阵列的太赫兹带阻滤波器

提出了一种结构简单的新型太赫兹带阻滤波器。滤波器结构为内表面刻有方型槽阵列的平行平板波导。太赫兹波入射时,在周期结构表面激发出只与表面几何结构有关的表面等离子波。有限元法仿真结果表明:平行平板波导中波导模式的基模转换为表面等离子模式,该模式和高阶波导模式之间产生能带间隙,频率在该间隙频段内的太赫兹波将无法在波导内传播,从而实现带阻滤波功能。通过错位法,可以对该结构进行改进,使该阻带与较高频阻带间的通带增大,使结构更符合带阻滤波器的要求。通过改变两板间距,槽宽和槽深各参数可以得到不同带宽和中心频率的阻带。     

机载线缆间的串扰耦合分析

串扰是机载设备间互联线缆干扰耦合的重要因素。以混合模S参数为基础,建立单线-双绞线模型以模拟机载设备之间的动力线缆对信号线产生的串扰耦合。在此模型基础上提出串扰耦合测试方案,搭建串扰耦合测试系统,并根据测试获得的耦合系数评估单线-双绞线线间串扰耦合强弱。通过测试比较,对影响因素进行分析,结果表明,距地高度对线间串扰影响不大,线间距对线间串扰耦合影响显著,因此在条件允许下尽可能增加设备间互联线缆的间距可有效抑制串扰耦合。     

马赫-曾德干涉型波分复用器的容差分析

通过耦合模理论分析了马赫-曾德干涉(MZI)型波分复用器各结构参数工艺误差对器件串扰的影响,比较了各结构参数的工艺容差性。结果表明,如果串扰要求在-30 dB以下,则波导臂长差的容差性为1％,耦合长度的容差性为2％,波导宽度的容差性较好;容差达到0．6μm时,串扰仍然在-58dB;波导间距对工艺精度要求最高,要求误差小于0．03μm。     

8通道-1.6nm Si纳米线阵列波导光栅的设计与制作

设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm。利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB。给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程。光谱测试结果分析表明,器件通道间隔为1.3～1.6nm,通道串扰为3dB,中心通道损耗为11.6dB。     

基于矢量模式的全光纤模式选择耦合器

提出了一种基于矢量模式的全光纤模式选择耦合器,该耦合器由一个单模光纤和一个空气芯环形少模光纤组成。基于耦合模理论,研究了不同参数对耦合特性的影响,并且详细分析了纤芯间距对高阶模式间的串扰和工作带宽的影响。结果表明,在相位匹配条件下,该矢量模式选择耦合器可高效地实现基模与特定高阶模的耦合;通过改变耦合器的纤芯间距,可以调控模式间的串扰和工作带宽之间的平衡关系。该模式选择耦合器可直接实现基模到高阶矢量模式的高效转换,能降低光通信系统的插损和复杂度,在光纤激光器、光镊和模分复用系统中具有潜在的应用价值。     

基于GaAs/GaAlAs条形光波导的定向耦合器分析

运用基于级数展开法(SEM)的三维光束传播法(3D-SEM-BPM)分析了由GaAs/GaAlAs条形光波导构成的定向耦合器.获得了这种定向耦合器所承载的偶模及奇模电场分布,其耦合长度随波导间距的增加近似指数增长.模拟了光波在器件中的传输演变情况,用条形光波导的基模在给定定向耦合器的左通道激励,传输2.62mm之后模场转移至右通道,获得了交叉态(Cross State).另外,3D-SEM-BPM最终将BPM基本方程归结为一阶常微分方程组,方法简单;导出矩阵小,计算效率高.处理边界条件时,引入正切函数变换将无限平面映射成单位平面,避免了边界截断问题.     

基于环形光纤的倾斜长周期光纤光栅的矢量模式转换

为了实现模分复用系统中的模式转换,提出了基于环形光纤的倾斜长周期光纤光栅的矢量模式转换方法。利用有限差分法和耦合模理论,研究了折射率调制的倾斜角度、幅度函数、光栅长度及耦合系数对模式耦合的影响。结果表明,在相位匹配条件下,该光栅可在不同波长处实现基模到特定高阶矢量模式的转换,且波长间隔大于150 nm。倾斜角度在模式耦合中起着关键作用,在倾斜角度约为84°时转换效率可达到最大。与现有模式转换方法相比,这种模式转换器模式间隔较大,模式间串扰低、转换效率高,在轨道角动量复用和矢量模式复用中有潜在应用价值。     

1550nm低推挽电压聚合物定向耦合电光开关的设计

应用保角变换法、镜像法、耦合模理论和电光调制理论设计了一种推挽电极聚合物脊形波导定向耦合电光开关,阐述了基本结构和工作原理,给出了器件的设计和优化过程,主要分析了耦合长度、开关电压、输出光功率、插入损耗、串扰等特性. 为了实现正常的开关功能,讨论了制作公差、波谱漂移以及单模光纤耦合损耗对器件性能的影响. 模拟结果表明,所设计的开关的耦合长度为3082μm,开关电压为2.14V;插入损耗小于1.14dB,串扰小于-30dB. 与BPM仿真结果以及实验结果的对比表明,文中提出的波导和电极的理论分析与计算方法具有较高的精度和可行性.     

一种表面等离子体激元定向耦合器的传输特性

利用三维全矢量时域有限差分法(FDTD)数值模拟了一种波导间隔金属条高度小于金属层厚度的表面等离子体激元(SPP)定向耦合器,并分析了其在基模传输时的模式场分布和能流密度分布,讨论了耦合长度、最大转移功率与间隔金属条高度的变化关系。结果表明,波导内沿纵向的能流密度在靠近间隔金属条部分的强度更大,有助于提高波导间耦合效率,并且当减小间隔金属条的高度时可以有效缩短定向耦合器耦合长度。这种亚波长定向耦合器结构可以应用在基于表面等离子体激元的集成光路中。     

基于SPP的1550纳米光波导的超长传输特性

采用严格电磁理论研究了介质-金属-介质型光波导激发表面等离子激元(SPPs)的电磁特性,对比分析了SPP波在SiO2/Ag/SiO2和Si/Ag/Si光波导的传输距离。研究表明,对于1550nm光通信波长入射光及10nm厚的金属银膜层,SiO2/Ag/SiO2光波导中非对称SPP的传输距离可达40cm,明显高于对称SPP波的传输距离,也显著高于非对称SPP波在Si/Ag/Si波导中的传输距离,具有超长传输距离;随着金属层厚度的增加SPP波的传输距离明显减小,当银层厚度超过50nm后,非对称的SPP在SiO2/Ag/SiO2及Si/Ag/Si波导中的传输距离趋于一致,约为200nm;此时银层厚度变化对SPP波传输距离的影响明显减弱。     

Performance of field-induced directional coupler switches

Switching in a GaAs field-induced, three-waveguide straight directional coupler is studied theoretically. This device can be tuned externally by changing the voltage across the waveguides. Because of this tunability, the device has some very attractive features as a switching element. The performance change due to variations in the device parameters such as length, waveguide separation, waveguide width, and wavelength of operation is numerically computed. The effect of material absorption, input and output coupling, and asymmetric excitation are included in the performance evaluation. For a device length of 1400 μm, a crosstalk of -34 dB and a power transfer efficiency of -2 dB is predicted, while for the same device size a two-guide directional coupler is predicted a crosstalk of -13.4 dB. The device has a 400 nm voltage tunable bandwidth with a maximum crosstalk penalty of 3 dB     

Enhancement of power transfer in periodic array of optical waveguides via intermediate Bloch states

A directional coupling mechanism between different waveguides in a periodic array of waveguides is suggested. The optical power transfer between two different waveguides is mediated by the coupling between zero-order modes of two of the waveguides and the second band of the periodic structure. Analytical solutions for the no-detuning (narrow band) and far-from-resonance cases are presented. The far-from-resonance case is shown to resemble a simple two-mode system with complete optical power transfer between the two waveguides, coupled by localized gratings. The transfer is mediated by the second band of the periodic structure. The transition length depends strongly on the shape of the perturbation, and depends exponentially on the distance between the waveguides, yet it allows us to transfer power from one waveguide to another at such distances, for which the transition via conventional directional tunneling mechanism is impossible. Our analytical results are supported by numerical calculations carried out for a model problem with realistic parameters.     

Silica-waveguide thermooptic phase shifter with low powerconsumption and low lateral heat diffusion

A thermooptic (TO) phase shifter consisting of a thin film heater on the top of a loaded stripline silica waveguide on a silicon substrate is shown to exhibit faster time response than reported for phase shifters based on a buried silica waveguide configuration. The risetime was measured to be 0.24 ms, which is in good agreement with calculated thermal distributions in the structures. The lateral heat diffusion distance in the loaded stripline structure is shown to be smaller than in buried waveguide structures. This implies small thermal crosstalk and suggests a high-level integration of adjacent waveguides     

1550nm低推挽电压聚合物定向耦合电光开关的设计

应用保角变换法、镜像法、耦合模理论和电光调制理论设计了一种推挽电极聚合物脊形波导定向耦合电光开关,阐述了基本结构和工作原理,给出了器件的设计和优化过程,主要分析了耦合长度、开关电压、输出光功率、插入损耗、串扰等特性.为了实现正常的开关功能,讨论了制作公差、波谱漂移以及单模光纤耦合损耗对器件性能的影响.模拟结果表明,所设计的开关的耦合长度为3082μm,开关电压为2.14V;插入损耗小于1.14dB,串扰小于-30dB.与BPM仿真结果以及实验结果的对比表明,文中提出的波导和电极的理论分析与计算方法具有较高的精度和可行性.     

Finite Element Analysis of Lossless Propagation in Surface Plasmon Polariton Waveguides With Nanoscale Spot-Sizes

We present simulation results on the propagation characteristics of active plasmonic waveguides at 1.55 mum wavelength based on semiconductors as the active gain media. Three waveguide structures were investigated: metal rib, metal-semiconductor-metal (MSM), and triangular metal groove. In all three structures, we observed strong plasmon mode confinement with nanoscale spot-sizes and corresponding simulated gain values compatible with existing semiconductor technology. We show the effect of systematic modification of waveguide geometry on the required gain for achieving lossless propagation in all the three plasmonic waveguide structures. We demonstrate that lossless propagation with subwavelength spot sizes well below the diffraction limit of light can be obtained by controlling the geometrical parameters of the proposed waveguides.     

Propagation Properties of a Modified Slot Surface Plasmonic Waveguide

In this paper, we present a modified slot surface plasmonic waveguide formed by metallic rod, core dielectric layer, and metallic film on the substrate. Using the finite-difference frequency-domain method, modal field distribution are analyzed firstly. Results show that the fundamental mode could be well confined in the space between the metal rod and the metal film. The dependence of modal field distribution, effective index, and propagation length of the fundamental plasmonic mode without gain on dielectric constant of the core layer, geometrical parameters, and working wavelengths are analyzed and discussed. A kind of available gain dielectric medium was used for the core dielectric layer to extend the propagation length. Results show that the propagation length can be extended observably with the help of the gain dielectric medium. Finally, effect of the thickness of the core dielectric layer on modal field distribution, effective index, and propagation length are analyzed and discussed. Since the modal field distribution, effective index, and propagation length can be controlled by adjusting the geometrical parameters, dielectric constant and gain of the core layer and working wavelengths of the waveguide, this kind of surface plasmonic waveguide can be applied to the field of photonic device integration and sensors.      

A multiple-scale analysis of grating-assisted couplers

Optical directional couplers with longitudinal periodic perturbations or gratings are analyzed by a multiple-scale solution to the coupled-mode equations. The use of two length scales in the analysis becomes the key to obtaining globally valid analytic solutions, which are shown to be in excellent agreement with the exact numerical solutions. Because of the nonorthogonality of the coupled modes in the structure, two different coupling lengths, a maximum power transfer length and a zero crosstalk length, are predicted for the power exchange. The spectral properties of the coupler are also studied through a generalized multiple scale method     

A short polarization splitter without metal overlays on InGaAsP-InP

A new and very short polarization splitter on InGaAsP-InP is designed and realized for the first time. The component contains a ridge waveguide directional coupler of 0.4 mm length and an output section of 0.7 mm. It uses the large waveguide birefringence of the first-order TE and TM modes to obtain polarization selective directional coupling. In this way, additional metal layers on the waveguides to create birefringence are avoided and fabrication becomes very simple. Components are realized, which show splitting ratios close to -20 dB. Excess losses are below 1 dB. The polarization splitting is investigated in the wavelength region of 1525-1560 nm and found to be better than -9 dB.