衬底温度对PLD法制备的ZnO:Ga薄膜结构和性能的影响

利用脉冲激光沉积法在石英衬底上制备了镓掺杂氧化锌(ZnO:Ga)透明导电薄膜,研究了衬底温度对薄膜的结构、表面形貌和光电性能的影响.研究表明:制备的ZnO:Ga薄膜是具有六角纤锌矿结构的多晶薄膜.随着衬底温度的增加,衍射峰明显增强,晶粒尺寸增大.当衬底温度为450℃时,薄膜的最低电阻率为8.5×10<'-4>Ω·cm,...     

Effects of deposition pressure on the properties of transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering

Gallium (Ga)-doped zinc oxide (ZnO:Ga) transparent conductive films were deposited on glass substrates by DC reactive magnetron sputtering. Effects of deposition pressure on the structural, electrical and optical properties of ZnO:Ga films were investigated. X-ray diffraction (XRD) studies show that the films are highly oriented with their crystallographic c-axis perpendicular to the substrate almost independent of the deposition pressure. The morphology of the film is sensitive to the deposition pressure. The transmittance of the ZnO:Ga thin films is over 90% in the visible range and the lowest resistivity of ZnO:Ga films is 4.48×10⁻⁴ Ω cm.     

Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

Transparent conducting gallium-doped ZnO films are deposited on glass substrates by magnetron sputtering of conducting ceramic targets. The dependences of structural, electric, and optical characteristics of ZnO:Ga films on the substrate temperature are investigated during the deposition. Stability of resistivity of films is considered during annealing in air. It is found that the films deposited at the substrate temperature of 250°C have the lowest resistivity of 3.8 × 10⁻⁴ Ω cm, while those deposited at 200°C have the highest thermal stability.     

PLD法生长Al2O3基ZnO薄膜的特性

在不同衬底温度下,用脉冲激光沉积法(PLD),在Al2O3(0001)平面上生长了ZnO薄膜。研究了衬底温度对其结晶质量、电学性质以及发光性质的影响。结果显示:XRD在2θ为34°处出现了唯一的ZnO(0002)衍射峰;ZnO薄膜的电阻率随衬底温度的升高而增大;在衬底温度为500℃时,出现了位于410nm附近的特殊的光致发光(PL)峰。     

The effects of carrier gas and substrate temperature on ZnO films prepared by ultrasonic spray pyrolysis

ZnO films were deposited on glass substrates in the temperature range of 350–470 °C under an atmosphere of compressed air or nitrogen (N₂) by using ultrasonic spray pyrolysis technique. Structural, electrical and optical properties of the ZnO films were investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), electrical two-probe and optical transmittance measurements. The ZnO films deposited in the range of 350–430 °C were polycrystalline with the wurtzite hexagonal structure having preferred orientation depending on the substrate temperature. The ZnO films deposited below 400 °C had a preferred (100) orientation while those deposited above 400 °C mostly had a preferred (002) orientation. The resistivity values of ZnO films depended on the types of carrier gas. The ZnO thin films deposited under N₂ atmosphere in the range of 370–410 °C showed dense surface morphologies and resistivity values of 0.6–1.1 Ω-cm, a few orders of magnitude lower than those deposited under compressed air. Hydrogen substition in ZnO possibly contributed to decreasing resistivity in ZnO thin films deposited under N₂ gas. The Hall measurements showed that the behavior of ZnO films deposited at 410 °C under the N₂ atmosphere was n-type with a carrier density of 8.9–9.2×10¹⁶ cm^-3 and mobility of ～70 cm²/Vs. ZnO thin films showed transmission values at 550 nm wavelength in a range of 70–80%. The values of band gaps extrapolated from the transmission results showed bandgap shrinkage in an order of milli electron volts in ZnO films deposited under N₂ compared to those deposited under compressed air. The calculation showed that the bandgap reduction was possibly a result of carrier–carrier interactions.     

溅射压强对柔性PET衬底ZnO薄膜性能的影响

利用直流磁控溅射法,在室温水冷柔性PET衬底上成功制备出了掺钛氧化锌(ZnO:Ti,TZO)透明导电薄膜。通过X射线衍射(XRD)研究了薄膜的结构,用扫描电镜(SEM)研究了薄膜的表面形貌,用四探针和紫外-可见分光光度计等仪器对薄膜的特性进行测试分析,研究了溅射压强对ZnO:Ti薄膜表面结构、形貌、力学、电学和光学性能的影响。结果表明,溅射压强对PET衬底上的TZO薄膜的性能有显著的影响,实验制备的ZnO:Ti薄膜为具有C轴择优取向的六角纤锌矿结构的多晶薄膜;当溅射压强从2Pa增加到4Pa时,薄膜的电阻率由10.87×10-4Ω.cm快速减小到4.72×10-4Ω.cm,随着溅射压强由4Pa继续增大到6Pa,薄膜的电阻率变化平缓,溅射压强为5Pa时薄膜的电阻率最小,为4.21×10-4Ω.cm;经计算得到6Pa时样品薄膜应力最小,为0.785 839GPa;所有样品都具有高于91%的可见光区平均透过率。     

溅射功率对PET衬底上ZnO:Zr薄膜性能的影响

采用直流磁控溅射法在室温下柔性PET衬底上制备出了高质量的掺锆氧化锌(ZnO:Zr)透明导电薄膜。研究了溅射功率对ZnO:Zr薄膜表面形貌、结构、电学和光学性能的影响。溅射功率对ZnO:Zr薄膜的电阻率影响显著:当溅射功率从60W增加到90W时,薄膜的电阻率先减小后增大,在最佳功率80W时,电阻率具有最小值3.67×10-3Ω·cm。所制备的ZnO:Zr薄膜具有良好的附着性能,在可见光区平均透射率高达90%。     

Properties of antimony doped ZnO thin films deposited by spray pyrolysis technique

Antimony (Sb) doped zinc oxide (ZnO) thin films were deposited on the glass substrate at 450°C using spray pyrolysis technique. Effect of Sb doping on surface morphology structural, optical and electrical properties were studied. X-ray diffraction (XRD) analysis showed that both the undoped and doped ZnO thin films are polycrystalline in nature with (101) preferred orientation. SEM analysis showed a change in surface morphology of Sb doped ZnO thin films. Doping results in a marked increase in conductivity without affecting the transmittance of the films. ZnO films prepared with 3 at % Sb shows the lowest resistivity of 0.185 Ohm cm with a Hall mobility of 54.05 cm² V^–1 s^–1, and a hole concentration of 6.25 × 10¹⁷ cm^–3.     

玻璃和聚酰亚胺衬底上磁控溅射沉积的ZnO:Al透明导电膜的结构、电学和光学性能(英文)

利用射频磁控溅射方法在玻璃和聚酰亚胺膜(PI)衬底上沉积了氧化铝质量分数为2%的掺铝氧化锌透明导电薄膜(ZnO∶Al)。系统地研究了不同衬底材料对薄膜的结构、电学以及光学性能的影响。分析表明,衬底材料对薄膜的结晶性和电学性能有较大的影响,对可见光透射率却影响不大。X射线衍射(XRD)分析得出所有的ZnO∶Al具有良好的c轴择优取向性,在可见光区(400～800nm)两种衬底上的薄膜都达到了85%的透射率。玻璃衬底上的薄膜呈现出更强的(002)衍射峰及相对更小的半峰全宽(FWHM),薄膜电阻率达到了2.352×10-4Ω.cm。电镜分析表明,相对于PI上的ZnO∶Al膜,玻璃上ZnO∶Al膜表面有更致密的微观结构及更大的晶粒尺寸。PI衬底上的ZnO∶Al膜也有相对较好的电、光学性能,其中电阻率达到了6.336×10-4Ω.cm,而且由于PI衬底柔性可弯曲,使得它适于在柔性太阳电池和柔性液晶显示中做窗口层材料及透明导电电极。玻璃上的ZnO∶Al膜则可应用在平板显示和太阳电池技术中。     

衬底温度对磁控溅射法制备的ZnO:In薄膜光电性能的影响

以粉末靶为溅射源,采用射频磁控溅射法在玻璃衬底上制备掺铟氧化锌(ZnO:In)透明导电膜.利用X射线衍射仪、原子力显微镜、霍尔测试仪,以及分光光度计等对不同衬底温度下生长的ZnO:In薄膜的结构、光电性能进行表征.结果表明,所有制备的ZnO:In薄膜均为六角纤锌矿结构的多晶膜,具有(002)择优取向.ZnO:In薄膜的电阻率随着衬底温度的升高先减小后增大,当衬底温度为100℃时,薄膜的最低电阻率为3.18×10~(-3)Ω·cm.制备的薄膜可见光范围内透过率均在85%以上.

Abstract：

Indium doped zinc oxide (ZnO : In) films were deposited on glass substrates by RF magnetron sputtering method using a powder target.The influence of the substrate temperature on the structure,optical and electrical properties was investigated by X-ray diffraction (XRD),atom force microscope (AFM),Hall measurement and optical transmission spectroscopy.The results show all the obtained films are polycrystalline with a hexagonal wurtzite structure and grow preferentially in the (002) direction,and the grain size is about 22～29 nm.The conductivity of the ZnO : In films change with the substrate temperature,and the lowest electrical resistivity is about 3.18 × 10~3 Ω·cm for the samples deposited at substrate temperature 100 ℃.The transmittance of our films in the visible range is all higher than 85%.     

缓冲层厚度对透明导电薄膜ZnO:Zr性能的影响

利用直流磁控溅射法在有ZnO:Zr缓冲层的水冷玻璃衬底上成功制备出了ZnO:Zr透明导电薄膜,缓冲层的厚度介于35～208 nm.利用XRD、SEM、四探针测试仪和紫外-可见分光光度计研究ZnO:Zr薄膜的结构、形貌、电光性能.结果表明,薄膜的颗粒尺寸和电阻率对缓冲层厚度具有较强的依赖性.当缓冲层厚度从35 nm增加到103 nm时,薄膜的颗粒尺寸增大,电阻率减小.而当缓冲层厚度从103 nm增加到208 nm时,薄膜的颗粒尺寸减小,电阻率增大.当缓冲厚度为103 nm时,薄膜的电阻率最小为2.96×10-3 Ω·cm,远小于没有缓冲层时的12.9×10-3 Ω·cm.实验结果表明,在沉积薄膜之前先沉积一层适当的缓冲层是提高ZnO:Zr薄膜质量的一种有效方法.     

Study on the structural, electrical and optical properties of Al-F co-doped ZnO thin films prepared by RF magnetron sputtering

Al and F co-doped ZnO(ZnO:(Al,F)) thin films on glass substrates are prepared by the RF magnetron sputtering with different F doping contents.The structural,electrical and optical properties of the deposited films are sensitive to the F doping content.The X-ray analysis shows that the films are c-axis orientated along the(002) plane with the grain size ranging from 9 nm to 13 nm.Micrographs obtained by the scanning electron microscope(SEM) show a uniform surface.The best films obtained have a resistivity of 2.16×10-3Ω·cm,while the high optical transmission is 92.0% at the F content of 2.46 wt.%.     

磁控反应溅射直接生长绒面H化Ga掺杂ZnO-TCO薄膜及其特性研究

采用直流磁控溅射技术,在玻璃衬底上直接生长出了具有绒面结构的H化Ga掺杂ZnO(HGZO)薄膜。研究了H2流量对薄膜结构、表面形貌及光电特性的影响。实验表明,在溅射过程中引入H2明显改善HGZO薄膜电学性能,并且能够直接获得具有绒面结构的薄膜。在H2流量为2.0sccm时,所制备的HGZO薄膜具有特征尺寸约200nm的类金字塔状表面形貌,同时薄膜方阻为4.8Ω,电阻率达到8.77×10-4Ω.cm。H2的引入可以明显改善薄膜短波区域的光学透过,生长获得的HGZO薄膜可见光区域平均透过率优于85%,近红外区域波长到1 100nm时仍可达80%。为了进一步提高薄膜光散射能力和光学透过率,根据不同H2流量下HGZO薄膜性能的优点,提出了梯度H2技术生长HGZO薄膜;采用梯度H2工艺生长获得的HGZO薄膜长波区域透过率有了一定的提高,薄膜具有弹坑状表面形貌,并且其光散射能力有了明显提高。     

Fabrication of p-Type ZnO Thin Films via DC Reactive Magnetron Sputtering by Using Na as the Dopant Source

The Na-doped p-type ZnO thin films were prepared by DC reactive magnetron sputtering. Two types of substrates were used for separate testing purposes: silicon wafers for crystallinity measurements and glass slides for electrical and optical transmittance measurements. The lowest room-temperature resistivity under the optimal condition was 59.9 Ω cm, with a Hall mobility of 0.406 cm² V⁻¹s⁻¹ and a carrier concentration of 2.57 × 10¹⁷ cm⁻³. The Na-doped ZnO thin films possessed a good crystallinity with c-axis orientation and a high transmittance (∼85%) in the visible region. The effects of the substrate temperature on the crystallinity and the electrical properties were discussed.     

Fabrication and characterisation of high quality ZnO thin films by reactive electron beam evaporation technique

High quality zinc oxide thin films have been deposited on silicon substrates by reactive e-beam evaporation in an oxygen environment. The effect of the growth temperature and air annealing on the structural, optical and electrical properties has been investigated. X-ray diffraction measurements have shown that ZnO films are highly c-axis-oriented and that the linewidth of the (002) peak is sensitive to the variation of substrate temperature. The optimum growth temperature has been observed at 300 °C. Raman spectroscopy has been found to be an efficient tool to evaluate the residual stress in the as-grown ZnO films from the position of the E₂ (high) mode. On the other hand, the vanishing of the 574 cm⁻¹. Raman feature after annealing has been explained as due to an increase of grain size and the reduction of O-vacancy and Zn interstitial. The SEM images have shown that the surfaces of the electron beam evaporated ZnO became smoother for the growth temperatures higher than 300 °C. The optical transmittance is the highest at 300 °C and has been increased after annealing in air showing an improvement of the optical quality. Finally, the maximum electrical resistivity has been found at 300 °C, which explains its relation with the crystal quality and increased from 5.8×10⁻² Ω cm to reach an approximate value of 10⁹ Ω cm after annealing at 750 °C.     

电子束沉积技术生长WZO-TCO薄膜及其特性研究

采用电子束沉积技术生长w掺ZnO（WZO,ZnO：w）透明导电氧化物（TCO）薄膜（即WZO-TCO薄膜）并研究了衬底温度（100-350℃）对薄膜微观结构、表面形貌以及光电性能的影响。实验表明,随着衬底温度的升高,薄膜的晶体质量取得明显改善（从非晶化状态转变到结晶状态）,生长的WZO薄膜呈现C轴择优取向[即（002）...     

Impact of substrate temperature on the structural,optical and electrical properties of thermally evaporated SnS thin films

Tin Sulfide thin films were deposited on soda lime glass substrates at three different substrate temperatures using thermal evaporation technique. The impact of substrate temperature on the deposited films has been studied thoroughly. Surface morphology was modified with the substrate temperature. XRD spectra shows orthorhombic end-centered type SnS having (1 1 0) orientation. The crystallite size increases with the increase in the substrate temperature. At a high substrate temperature (450 °C) small grains form on the surface and crystallinity decreases. The effect of substrate temperature on optical and electrical properties has been studied using UV–Vis–NIR Spectrophotometer and Hall effect respectively. With the increase in the substrate temperature there is a substantial decrease in the transmittance and bandgap value. Refractive index (n), dielectric constant (ε₁) and extinction co-efficient (k) have also been calculated for different substrate temperatures.     

Thickness dependent physical properties of chemically deposited nanocrystalline MgSe thin films deposited at room temperature by solution growth method

Chemical bath deposition method has been employed to deposit nanocrystalline magnesium selenide thin films of thickness 104–292 nm onto glass substrates at room temperature. The deposition bath consists of magnesium chloride, triethanolamine (TEA) and selenium dioxide. The as deposited films were characterized by X-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption, electrical resistivity and thermo-emf measurements. The X-ray diffraction (XRD) studies revealed that the crystallinity of the magnesium selenide thin film increases with thickness. SEM studies reveal that MgSe films exhibit uniform distribution of round shaped grains over the entire substrate surface.The optical band-gap and electrical resistivity of MgSe film decrease as the film thickness increases. Such type of dependence is attributed to the quantum size effect that is observed in nanocrystalline semiconductors.The thermo-emf measurement confirms its p-type conductivity.     

Effect of the deposition rate on the phase transition in silver telluride thin films

Silver telluride thin films of thickness 50 nm have been deposited at different deposition rates on glass substrates at room temperature and at a pressure of 2×10⁻⁵ mbar. The electrical resistivity was measured in the temperature range 300–430 K. The temperature dependence of the electrical resistance of Ag₂Te thin films shows structural phase transition and coexistence of low temperature monoclinic phase and high temperature cubic phase. The effect of deposition rate on the phase transition and the electrical resistivity of silver telluride thin films in relation to carrier concentration and mobility are discussed.     

Deposition and characterization of molybdenum thin films using dc-plasma magnetron sputtering

Molebdenum (Mo) thin films were deposited on well-cleaned soda-lime glass substrates using DC-plasma magnetron sputtering. In the design of experiment deposition was optimized for maximum beneficial characteristics by monitoring effect of process variables such as deposition power (100–200 W). Their electrical, structural and morphological properties were analyzed to study the effect of these variables. The electrical resistivity of Mo thin films could be reduced by increasing deposition power. Within the range of analyzed deposition power, Mo thin films showed a mono crystalline nature and the crystallites were found to have an orientation along [110] direction. The surface morphology of thin films showed that a highly dense micro structure has been obtained. The surface roughness of films increased with deposition power. The adhesion of Mo thin films could be improved by increasing the deposition power. Atomic force microscopy was used for the topographical study of the films and to determine the roughness of the films. X-ray diffractrometer and scanning electron microscopy analysis were used to investigate the crystallinity and surface morphology of the films. Hall effect measurement system was used to find resistivity, carrier mobility and carrier density of deposited films. The adhesion test was performed using scotch hatch tape adhesion test. Mo thin films prepared at deposition power of 200 W, substrate temperature of 23°C and Ar pressure of 0.0123 mbar exhibited a mono crystalline structure with an orientation along (110) direction, thickness of ～550 nm and electrical resistivity value of 0.57 × 10^?4 Ω cm.