共查询到19条相似文献,搜索用时 46 毫秒
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导热绝缘胶的研制和应用方法 总被引:4,自引:0,他引:4
讨论了导热系数k与材料本身相联系的因素,以树脂、固化剂和导热绝缘填料的选择组合处理上进行了试验,取得了性能优异的导热绝缘的配方,结合具体的器件与散热构件的组合进行了讨论,取得了良好的散热效果,解决了一些问题。 相似文献
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一般的多层陶瓷基板材料主要是Al2O3。由于Al2O3的导热率低,不适应电子产品小型化、电路高密度化的要求。迫切需要导热率高,散热性能良好的绝缘基板。 相似文献
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发光二极管在产生可见光的同时也产生大量的热量。如果使用不当,这些热量会导致电子产品过早地损坏。绝缘金属基板可以解决该问题,同时延长这些产品的使用寿命。 相似文献
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《Microelectronics Reliability》2014,54(9-10):2017-2022
The attachment and packaging of temperature sensors may be challenging due to their structure and materials. Sensing requires a structure which is open to the environment and the materials often differ from those used in silicon-based electronics. Thus, traditional attachment techniques and materials such as soldering may be inappropriate. Polymer-based electrically conductive adhesives (ECA) are an alternative. The operating environment of a sensor may, however, be very demanding. Very little research data is available on the use of ECAs in challenging conditions, thus restricting their use in many applications. This study tested the behaviour of temperature sensors attached with ECAs onto flexible polyimide (PI) substrates in thermal storage at 200 °C. More than 1000 h of testing without failures were conducted on the ECA sensor structures. Good high temperature reliability therefore seems to be possible with ECAs. However, the PI substrate was observed to be critical to reliability. An adhesive layer used in the PI substrate reacted at the test temperature and severe oxidation of the copper pads and reaction between the materials consequently destroyed the interconnection and caused failures. 相似文献
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Conductive hafnium nitride (HfN) with negligible carbon impurity (<0.1 at.%) was chemically synthesized for the first time by post-rapid thermal annealing (PRTA)-assisted metal organic chemical vapor deposition (MOCVD) method. The thermodynamic instability of N-rich hafnium nitride (Hf3N4) phase, which is considered to be the dominant phase in CVD deposition of hafnium nitride, was utilized for pure and metallic HfN synthesis. By integrating the PRTA-HfN film into MOS capacitor, the electrical properties of the PRTA-HfN film as metal gate electrode were studied. Well behaved electrical characteristics such as about 4.9 eV of effective work function, low leakage current and large reduction in SiO2 equivalent oxide thickness (EOT), which was attributed to the combination of physical thinning of SiO2 and formation of high-κ interfacial layer, suggest the potential capability of PRTA-assisted MOCVD in chemically synthesizing HfN metal gate electrode for pMOS devices application. 相似文献
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《Microelectronics Journal》2014,45(12):1726-1733
This paper elucidates the thermal behavior of an LED employing metal filled polymer matrix as thermal interface material (TIM) for an enhanced heat dissipation characteristic. Highly thermal conductive aluminum (Al) particles were incorporated in bisphenol A diglycidylether (DGEBA) epoxy matrix to study the effect of filler to polymer ratio on the thermal performance of high power LEDs. The curing behavior of DGEBA was studied by differential scanning calorimetry (DSC) and thermogravimetric analysis (TGA). The dispersion nature of the Al fillers in polymer matrix was verified with Field Emission Scanning Electron Microscope (FESEM). The thermal performance of synthesized Al filled polymer composite as TIM was tested with an LED employing thermal transient measurement technique. Comparing the filler to polymer ratio, the rise in junction temperature for 60 wt% Al filled composite was higher by 11.1 °C than 50 wt% Al filled composite at cured state. Observed also from the structure function analysis that the total thermal resistance was 10.96 K/W higher for 60 wt% Al filled composite compared to 50 wt% Al filled composite. On the other hand, a significant rise of 9.5 °C in the junction temperature between cured and uncured samples of 50 wt% Al filled polymer TIM was observed and hence the importance of curing process of metal filled polymer composite for effective heat dissipation is discussed extensively in this work. 相似文献