EUV光刻技术的发展

介绍了半导体产业在制造极限的技术路线选择方面,下一代光刻技术—极紫外光刻设备面临的挑战及其开发和技术应用的进展现状,指出了在未来的22nm技术节点极紫外光刻进入量产的可能性。     

缺陷对极紫外掩模多层结构反射场的扰动研究

极紫外光刻掩模具有特殊的多层膜堆叠的反射式结构,在工艺制造过程中极易产生缺陷,引起多层膜结构变形,从而对掩模反射场产生干扰。这种掩模缺陷是制约极紫外光刻技术发展的难题之一。建立了含有缺陷的极紫外掩模多层膜结构模型,在此基础上采用时域有限差分(FDTD)法分析了缺陷尺寸和缺陷位置对掩模多层膜结构反射场分布的影响。结果表明,多层膜结构反射场受干扰程度是缺陷的高度和宽度综合作用的结果,并且与缺陷结构的平缓程度有关。反射场受干扰程度也与缺陷在多层膜结构内部的高度位置有关,引起多层膜结构靠近底层变形的缺陷对反射场的影响较小,而引起多层膜结构靠近顶层变形的缺陷对反射场有明显的干扰。     

光源掩模协同优化的原理与应用

当半导体技术节点缩小至14 nm及以下时,光刻技术也逐渐接近了其物理极限.光源掩模协同优化(SMO)作为一种新型的分辨率增强技术,能够显著提升极限尺寸下半导体光刻的重叠工艺窗口,有效延伸当前常规光刻技术的生存周期.综述了SMO这一技术,分析了SMO的原理,介绍了该技术的发展和在半导体制造工艺中的应用,重点探讨了其在先进光刻节点研发中的应用,并对其挑战和发展趋势进行了展望,认为SMO不仅是193 nm浸润式光刻技术的重要组成部分,也将是EUV光刻中必不可少的一种技术.     

极紫外光刻给光学技术带来的挑战

概述了极紫外光刻技术的发展,阐明了极紫外光刻技术的特点,说明了极紫外光刻的关键光学技术.极紫外光刻中光学元件的评价需要采用随空间波长变化的表面功率谱密度进行评价,分析了不同区域内表面误差对极紫外光刻系统性能的影响,给出了极紫外光刻对相应空间波长区域的技术要求和现在技术能够达到的水平.根据这些问题,重点说明了极紫外光刻如何将光学加工、检测和镀膜技术带到了原子尺度.最后建议我国能够抓紧时间,尽快启动相关研究,推动我国相关领域的发展.     

45nm工艺及材料的最新动态

介绍了45nm芯片、工艺和设备的最新动态。英特尔、TI、IBM、特许、英飞凌和三星都推出了45nm功能芯片。45nm主要工艺包括光刻、应变硅、低k电介质、Cu互连、高k电介质和离子注入等。光刻工艺采用193nmArF/浸没式光刻机。45nm工艺中应变硅技术已步入第三代,它综合采用双应力衬垫、应力记忆和嵌入SiGe层。     

向商业化迈进的极紫外(EUV)光刻技术

在介绍EUV光刻原理和EUV光源基本概念的基础上,讨论了目前研究得最多、技术最成熟的激光产生的等离子体LPP光源,着重对EUV光源的初步应用和EUV光刻设备的开发进展情况进行了详细介绍与讨论。目前的研究进展表明,随着激光产生的等离子体EUV光源（LPP）功率的不断提高和EUV光刻设备的逐步成熟,极紫外（EUV）光刻技术将在2012年步入半导体产业的商业化生产。     

极紫外光刻材料研究进展

极紫外光刻是微电子领域有望用于下一代线宽为22nm及以下节点的商用投影光刻技术,光刻材料的性能与工艺是其关键技术之一。为我国开展极紫外光刻材料研究提供参考,综述了最近几年来文献报道的研究成果,介绍了极紫外光刻技术发展历程、现状、光刻特点及对光刻材料的基本要求,总结了极紫外光刻材料的研究领域和具体分类,着重阐述了主要光刻材料的组成、光刻原理,光刻性能所达到的水平和存在的主要问题,最后探讨了极紫外光刻材料未来的主要研究方向。     

灰度掩模制作系统掩模图形的生成及工艺研究

灰度掩模法是目前正在积极探索的一种二元光学器件制作方法。从基于空间光调制器的灰度掩模制作方法出发,就“掩模图形的生成”和“工艺”这两个难点问题进行了深入的研究,并具体地制作了几种常用的二元光学器件的灰度掩模,为该方法进一步投入实用提供了一条较好的思路。     

灰度掩模制作统掩模图形的生成及工艺研究

灰度掩模法是目前正在积极探索的一种二元光学器件制作方法.从基于空间光调制器的灰度掩模制作方法出发,就"掩模图形的生成"和"工艺"这两个难点问题进行了深入的研究,并具体地制作了几种常用的二元光学器件的灰度掩模,为该方法进一步投入实用提供了一条较好的思路.     

亚微米光刻与光掩模新技术现状与研发前景

介绍了光刻与光掩模技术背景与特征,及其创新技术研发的前景与市场机会.     

A Materials Perspective on Direct Recycling of Lithium-Ion Batteries: Principles,Challenges and Opportunities

As the dominant means of energy storage technology today, the widespread deployment of lithium-ion batteries (LIBs) would inevitably generate countless spent batteries at their end of life. From the perspectives of environmental protection and resource sustainability, recycling is a necessary strategy to manage end-of-life LIBs. Compared with traditional hydrometallurgical and pyrometallurgical recycling methods, the emerging direct recycling technology, rejuvenating spent electrode materials via a non-destructive way, has attracted rising attention due to its energy efficient processes along with increased economic return and reduced CO₂ footprint. This review investigates the state-of-the-art direct recycling technologies based on effective relithiation through solid-state, aqueous, eutectic solution and ionic liquid mediums and thoroughly discusses the underlying regeneration mechanism of each method regarding different battery chemistries. It is concluded that direct regeneration can be a more energy-efficient, cost-effective, and sustainable way to recycle spent LIBs compared with traditional approaches. Additionally, it is also identified that the direct recycling technology is still in its infancy with several fundamental and technological hurdles such as efficient separation, binder removal and electrolyte recovery. In addressing these remaining challenges, this review proposes an outlook on potential technical avenues to accelerate the development of direct recycling toward industrial applications.     

An Alternative Approach to Constructing Solution Processable Multifunctional Materials: Their Structure,Properties, and Application in High‐Performance Organic Light‐Emitting Diodes

A new series of full hydrocarbons, namely 4,4′‐(9,9′‐(1,3‐phenylene)bis(9H‐fluorene‐9,9‐diyl))bis(N,N‐diphenylaniline) (DTPAFB), N,N′‐(4,4′‐(9,9′‐(1,3‐phenylene)bis(9H‐fluorene‐9,9‐diyl))bis(4,1‐phenylene))bis(N‐phenylnaphthalen‐1‐amine) (DNPAFB), 1,3‐bis(9‐(4‐(9H‐carbazol‐9‐yl)phenyl)‐9H‐fluoren‐9‐yl)benzene, and 1,3‐bis(9‐(4‐(3,6‐di‐tert‐butyl‐9H‐carbazol‐9‐yl)phenyl)‐9H‐fluoren‐9‐yl)benzene, featuring a highly twisted tetrahedral conformation, are designed and synthesized. Organic light‐emitting diodes (OLEDs) comprising DNPAFB and DTPAFB as hole transporting layers and tris(quinolin‐8‐yloxy)aluminum as an emitter are made either by vacuum deposition or by solution processing, and show much higher maximum efficiencies than the commonly used N,N′‐di(naphthalen‐1‐yl)‐N,N′‐diphenylbiphenyl‐4,4′‐diamine device (3.6 cd A^?1) of 7.0 cd A^?1 and 6.9 cd A^?1, respectively. In addition, the solution processed blue phosphorescent OLEDs employing the synthesized materials as hosts and iridium (III) bis[(4,6‐di‐fluorophenyl)‐pyridinato‐N, C²] picolinate (FIrpic) phosphor as an emitter present exciting results. For example, the DTPAFB device exhibits a brightness of 47 902 cd m^?2, a maximum luminescent efficiency of 24.3 cd A^?1, and a power efficiency of 13.0 lm W^?1. These results show that the devices are among the best solution processable blue phosphorescent OLEDs based on small molecules. Moreover, a new approach to constructing solution processable small molecules is proposed based on rigid and bulky fluorene and carbazole moieties combined in a highly twisted configuration, resulting in excellent solubility as well as chemical miscibility, without the need to introduce any solubilizing group such as an alkyl or alkoxy chain.     

Multifunctional Fluorene‐Based Oligomers with Novel Spiro‐Annulated Triarylamine: Efficient,Stable Deep‐Blue Electroluminescence,Good Hole Injection,and Transporting Materials with Very High Tg

A series of fluorene‐based oligomers with novel spiro‐annulated triarylamine structures, namely DFSTPA, TFSTPA, and TFSDTC, are synthesized by a Suzuki cross‐coupling reaction. The spiro‐configuration molecular structures lead to very high glass transition temperatures (197–253 °C) and weak intermolecular interactions, and consequently the structures retain good morphological stability and high fluorescence quantum efficiencies(0.69–0.98). This molecular design simultaneously solves the spectral stability problems and hole‐injection and transport issues for fluorene‐based blue‐light‐emitting materials. Simple double‐layer electroluminescence (EL) devices with a configuration of ITO/TFSTPA (device A) or TFSDTC (device B)/ TPBI/LiF/Al, where TFSTPA and TFSDTC serve as hole‐transporting blue‐light‐emitting materials, show a deep‐blue emission with a peak around 432 nm, and CIE coordinates of (0.17, 0.12) for TFSTPA and (0.16, 0.07) for TFSDTC, respectively, which are very close to the National Television System Committee (NTSC) standard for blue (0.15, 0.07). The maximum current efficiency/external quantum efficiencies are 1.63 cd A^?1/1.6% for device A and 1.91 cd A^?1/2.7% for device B, respectively. In addition, a device with the structure ITO/DFSTPA/Alq₃/LiF/Al, where DFSTPA acts as both the hole‐injection and ‐transporting material, is shown to achieve a good performance, with a maximum luminance of 14 047 cd m^?2, and a maximum current efficiency of 5.56 cd A^?1. These values are significantly higher than those of devices based on commonly usedN,N′‐di(1‐naphthyl)‐N,N′‐diphenyl‐[1,1′‐biphenyl]‐4,4′‐diamine (NPB) as the hole‐transporting layer (11 738 cd m^?2 and 3.97 cd A^?1) under identical device conditions.