共查询到18条相似文献,搜索用时 140 毫秒
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综述了聚焦离子束系统的结构和基本原理,介绍了国产化聚焦离子束系统的结构与特点。基于国产化聚焦离子束系统进行了硅材料刻蚀实验,研究了硅材料刻蚀速率与离子束流大小的关系,建立了刻蚀速率与束流大小的关系方程,进行了硅悬梁微结构刻蚀加工。结果表明,国产聚焦离子束系统可满足硅微悬梁结构加工的应用需要。 相似文献
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分析了射频等离子体增强化学气相淀积(RFPECVD)参数对含氢非晶碳(α-C∶H)刻蚀特性的影响规律。首先,针对射频功率、丙烯流量、反应腔压强、极板间距等工艺参数对膜层刻蚀特性的影响进行了实验,并通过确定性筛选设计方法产生实验矩阵。然后,采用RFPECVD工艺在硅衬底上淀积α-C∶H。最后,运用多元回归方法对刻蚀速率、刻蚀均匀性进行了研究。结果表明,淀积工艺参数的变化对膜层的均匀性没有影响,对膜层的刻蚀速率有影响。该工艺参数对刻蚀特性的影响研究对优化CVD工艺具有参考价值。 相似文献
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讨论了制作大面阵矩底拱面状微透镜阵列的工艺条件,给出了氩离子束刻蚀制作红外焦平面用面阵微透镜的离子束刻蚀速率的经验关系式,通过实验获得了光电材料几种常用的氩离子束刻蚀速率与氩离子束能量之间的关系曲线,用扫描电子显微镜测量了所制微透镜阵列的微结构形貌特征。 相似文献
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采用Cl2/Ar感应耦合等离子体(ICP)对单晶硅进行了刻蚀,工艺中用光刻胶作掩膜。研究了气体组分、ICP功率和RF功率等工艺参数对硅刻蚀速率和硅与光刻胶刻蚀选择比的影响,同时还研究了不同工艺条件对侧壁形貌的影响。结果表明,由于物理刻蚀机制和化学刻蚀机制的相对强度受到混合气体中Cl2和Ar比例的影响,硅刻蚀速率随着Ar组分的增加而降低,同时选择比也随之降低。硅刻蚀速率随着ICP功率的增大先增大继而减小,选择比则成上升趋势。硅刻蚀速率和选择比均随RF功率的增大单调增大。在Cl2/Ar混合气体的刻蚀过程中,离子辅助溅射是决定硅刻蚀效果的重要因素。同时,文中还研究分析了刻蚀工艺对于微槽效应和刻蚀侧壁形貌的影响,结果表明,通过提高ICP功率可以有效减小微槽和平滑侧壁。进一步研究了SiO2掩膜下,压强改变对于硅刻蚀形貌的影响,发现通过降低压强,可以明显地抑制杂草的产生。 相似文献
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介绍了Ar/CHF3反应离子束刻蚀和离子束入射角对图形侧壁陡直度及刻蚀选择比的影响。使用紫外曝光技术在SiO2基片上获得光刻胶掩模图形,采用Ar CHF3来刻蚀石英基片,调节二者的流量配比,混合后通入离子源。在Ar和CHF3的流量比为1∶2,总压强为2×10-2Pa,离子束流能量为450 eV,束流为80 mA,加速电压220 V~240 V,离子束入射角15°并旋转样品台的情况下,刻蚀20 min后,得到光栅剖面倾角陡直度为80°~90°。同时发现,添加CHF3后,提高了SiO2的刻蚀速率和刻蚀SiO2与光刻胶的选择比,最高可达7∶1。 相似文献
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Ar/CHF3反应离子束刻蚀SiO2的研究 总被引:1,自引:0,他引:1
介绍了Ar/CHF3反应离子束刻蚀和离子束入射角对图形侧壁陡直度及刻蚀选择比的影响.使用紫外曝光技术在SiO2基片上获得光刻胶掩模图形,采用Ar+CHF3来刻蚀石英基片,调节二者的流量配比,混合后通入离子源.在Ar和CHF3的流量比为12,总压强为2×10-2 Pa,离子束流能量为450 eV,束流为80 mA,加速电压220 V~240 V,离子束入射角15°并旋转样品台的情况下,刻蚀20 min后,得到光栅剖面倾角陡直度为80°~90°.同时发现,添加CHF3后,提高了SiO2的刻蚀速率和刻蚀SiO2与光刻胶的选择比,最高可达71. 相似文献
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Reactive ion etching characteristics of GaAs,GaSb,InP and InAs using Cl_2/Ar plasma have been investigated,it is that,etching rates and etching profiles as functions of etching time,gas flow ratio and RF power.Etch rates of above 0.45 μm/min and 1.2 μm/min have been obtained in etching of GaAs and GaSb respectively, while very slow etch rates (<40 nm/min) were observed in etching of In-containing materials,which were linearly increased with the applied RF power.Etched surfaces have remained smooth over a wide range of plasma conditions in the etching of GaAs,InP and InAs,however,were partly blackened in etching of GaSb due to a rough appearance. 相似文献
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Oxygen ion-beam etch resistance of metal-free and organosilicon resist materials has been studied, using an etching system with a Kaufman ion gun. The etch rate for metal-free resist materials is inversely proportional to the number of effective carbon atoms in a material. The effective term means subtracting the number of oxygen atoms from that of carbon atoms. This result suggests that the etch-rate determining step is the sputtering of carbon atoms which are not bonded to oxygen atoms. Carbon atoms bonded to oxygen atoms, for example >C=O or ?C-O-, may spontaneously desorb to form a volatile product CO under ion bombardment. The etch-rate ratio of an organosilicon resist material P(SiSt-CMS) to AZ1350J markedly increases with decreasing acceleration energy. This is because the rate determining step for an organosilicon resist material is mainly due to the sputtering of silicon atoms in the polymer. This is supported by the fact that the etch rate of an organosilicon resist material increases with increasing beam angle, while that of metal-free resist material monotonically decreases with increasing beam angle. 相似文献
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V. Srivastav R. Pal B. L. Sharma A. Naik D. S. Rawal V. Gopal H. P. Vyas 《Journal of Electronic Materials》2005,34(11):1440-1445
Mesa structures were etched in HgCdTe using different Br2/HBr/Ethylene glycol (EG) formulations. Etch rate and degree of anisotropy (A) were studied in detail for all of the combinations.
Addition of EG to the conventional etchant gave A>0.5, with controllable etch rates. Optimum etchant composition was determined
to be 2% Br2 in a 3:1 mixture of EG:HBr. This composition resulted in a good anisotropy factor of ∼0.6 and a reasonably optimum etch rate
of ∼2.5 μm/min, with rms surface roughness of ∼2 nm. Kinetics of the etching reaction have also been studied for the optimum
etchant concentration and an etching mechanism has been proposed. 相似文献
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本文对氮化硅的增强电容耦合等离子刻蚀进行研究,为氮化硅刻蚀工艺的优化提供参考。针对SF_6+O_2气体体系,通过设计实验考察了功率、压强、气体比、氦气等对刻蚀速率和均一性的影响,并对结果进行机理分析和讨论。实验结果表明:功率越大,刻蚀速率越大,与源极射频电力相比,偏置射频电力对刻蚀速率的影响更为显著;压强增大,刻蚀速率增大,但压强增大到一定程度后,刻蚀速率基本不变,刻蚀均匀性随着压强增大而变差;在保证SF_6/O_2总流量保持不变下,O_2的比例增大,刻蚀速率先增大后减小,刻蚀均匀性逐步变好;He的添加可以改善刻蚀均匀性,但He的添加量过多时,会造成刻蚀速率降低。 相似文献
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高Al组分AlGaN的ICP干法刻蚀 总被引:2,自引:2,他引:0
初步研究了采用Cl2 /Ar /He等离子体对MOCVD生长的背照射Al0. 45 Ga0. 55N材料的
ICP干法刻蚀工艺。采用离子束溅射生长的Ni作为刻蚀掩模,刻蚀速率随ICP直流偏压的增加而增加。采用传输线模型测量了刻蚀前后AlGaN材料方块电阻的变化,分析了干法刻蚀电学损伤与直流偏压的关系。用扫描电镜( SEM)观察了不同直流偏压下刻蚀台面形貌,并对其进行了分析。 相似文献