一种敏感的MOSFET ESD潜在损伤检测方法

MOSFET ESD潜在损伤的有效检测一直是一个难以解决的问题.实验对比发现,MOSFET沟道电流的1/f噪声比传统的电参数更能敏感地反映栅氧化层中ESD潜在损伤的情况.在相同的静电应力条件下,1/f噪声的变化要比常规电参数敏感的多,其功率谱幅度的相对变化量比跨导的最大相对退化量大6倍以上,因此可以作为 MOSFET ESD潜在损伤的一种敏感的检测方法.在给出实验结果的同时,对这一敏感性的机理进行了较深入的分析.     

辐照诱生的双极性线性稳压器的1/f 噪声退化研究

研究发现辐照能使双极线性稳压器LM117的输出1/f噪声性能退化。本文在研究双极线性稳压器LM117的辐照失效机理基础上,认为LM117的内部带隙基准是其噪声性能退化的关键部件,辐照引起的带隙基准内部的双极性晶体管的基极表面复合电流的退化,导致LM117输出1/f噪声发生退化。通过对比,可以看出1/f噪声比电参数敏感,也可以用来表征LM117辐照损伤。     

先进MOSFET中1/f噪声研究进展

全面综述了先进金属氧化物半导体场效应晶体管(MOSFET)的1/f噪声研究进展.界面态、器件结构、材料缺陷、量子效应等诸多因素均会影响1/f噪声.随着工艺尺寸的持续缩小和高k介质材料的应用,以及热载流子效应、辐照损伤等因素的影响,MOSFET的1/f噪声起源问题一直是学术界具有较大分歧和争议的课题.只有澄清了1/f噪声...     

MOSFET1/f噪声相似性的子波鉴别方法

基于傅里叶分析的功率谱密度只能反映1/f噪声的整体频率特性,子波变换模极大值能够反映1/f噪声的奇异性和非规整性,而后者才是1/f噪声最本质的特征所在.本文将这一特性用于MOSFET 1/f噪声的相似性分析.从子波变换模极大值匹配原理出发,定义了一个1/f噪声的相似系数,利用它对不同形成机制、不同微观缺陷状态、不同偏置应力作用下的MOSFET 1/f噪声进行了相似性分析,发现它可作为鉴别1/f噪声的物理起源,分析1/f噪声的微观动力学机制,筛选有潜在缺陷或损伤的MOS器件的有效手段.     

DC/DC辐照损伤与VDMOS器件1/f噪声相关性研究

通过对DC/DC转换器低频噪声测试技术以及在γ辐照前后电性能与1/f噪声特性变化的对比分析,发现使用低频噪声表征DC/DC转换器的可靠性是对传统电参数表征方法的一种有效补充.对DC/DC转换器辐照损伤与其内部VDMOS器件1/f噪声相关性进行了研究,讨论了引起DC/DC转换器辐照失效的原因.     

MOSFET 1/f噪声的相关积分分析方法

文章将相关积分方法用于MOSFET 1/f噪声分析,发现器件的1/f噪声与RTS叠加模型产生的1/f噪声相关积分极其相似.通过对MOSFET噪声物理模型的分析和讨论,证明n-MOSFET的1/f噪声以载流子数涨落模型为主,p-MOSFET的1/f噪声以迁移率涨落模型为主结论的正确性.研究表明,相关积分方法可用于鉴别电子器件测量噪声所属的模型类型.     

金属/半导体接触孔噪声特性研究

通过对1μm金属/半导体接触孔链样品施加高应力的加速寿命试验和室温下的噪声频谱测量,得到了1/f噪声、10Hz点频功率谱特征及其变化规律.实验中发现应力前后1/f噪声10Hz点频功率谱有明显的变化.对比实验中电阻和噪声的变化,噪声变化量是电阻变化量的1304倍.1/f噪声可以作为金属/半导体接触孔可靠性的灵敏表征参量.     

一种新的晶圆级1/f噪声测量方法

引言 MOSFET在模拟和射频电路中得到了广泛的应用.但是,MOSFET中的低频噪声,尤其是较高频率的1/f噪声,是模拟和射频电路应用中人们关注的重要因素.此外,随着器件特征尺寸的缩小,1/f噪声会大大增加[参考文献].因此,在测量1/f噪声时设计一套可靠的、重复性好的、精确的测量方法和系统是非常必要的.     

MOSFET表面1/f噪声的研究

本文从表面载流子数涨落机构出发,对MOSFET的1/f噪声性质作了较全面的理论和实验研究。将MOSFET的表面1/f噪声理论推广到了所有的偏置区,包括沟道均匀区,线性区和饱和区。对MOSFET的等效输入噪声电压的频率特性、偏置特性和几何特性等进行了实验测试,结果表明与理论规律符合良好。     

用1/f噪声预测双极晶体管的h_(FE)漂移失效

对高温贮存和功率老化寿命试验结果的统计分析表明,npn型双极晶体管的电流增益h_(FE)随时间的漂移量与其初始1/f噪声有关.初始1/f噪声越大,则其h_(FE)漂移量也越大.相对漂移量△h_(FE)/h_(FE)与初始1/f噪声谱密度S_(iB)(f)的相关系数远大于它与初始直流参数的相关系数.根据笔者已建立的h_(FE)时间漂移模型,证明h_(FE)漂移与1/f噪声可归因于同一物理起源.据此,1/f噪声测量作为一种快速且非破坏性的手段,可用于双极晶体管h_(FE)漂移失效的早期预测.     

MOSFET抗辐照能力预测方法

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立起MOSFET抗辐照能力预测模型.利用该模型,可较好地通过辐照前的1/f噪声参量,预测辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移的情况.模型模拟结果与实际测量结果符合良好,验证了预测模型的正确性,并为工程应用提供MOSFET抗辐照能力预测方法.     

MOSFET抗辐照能力预测方法

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立起MOSFET抗辐照能力预测模型.利用该模型,可较好地通过辐照前的1/f噪声参量,预测辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移的情况.模型模拟结果与实际测量结果符合良好,验证了预测模型的正确性,并为工程应用提供MOSFET抗辐照能力预测方法.     

Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET

$1/f$ noise and random telegraph signal (RTS) noise are increasingly dominant sources of low-frequency noise as the MOSFET enters the nanoscale regime. In this study, $1/f$ noise and RTS noise in the n-channel MOSFET are modelled in the time domain for efficient implementation in transient circuit simulation. A technique based on sum-of-sinusoids models $1/f$ noise while a Monte Carlo based technique is used to generate RTS noise. Low-frequency noise generated using these models exhibits the correct form of noise characteristics as predicted by theory, with noise parameters from standard 0.35-$mu$m and 35-nm CMOS technology. Implementation of the time-domain model in SPICE shows the utility of the noisy MOSFET model in simulating the effect of low-frequency noise on the operation of deep-submicrometer analog integrated circuits.      

Impact of post-oxidation annealing on low-frequency noise, threshold voltage, and subthreshold swing of p-channel MOSFETs

The impact of post-oxidation annealing on the low-frequency noise, threshold voltage, and subthreshold swing of p-channel MOSFET is reported. The low-frequency noise is improved significantly with post-oxidation annealing and a modest V/sub T/ and S reduction is observed. Oxide traps are primarily extracted from measured noise. They are also extracted from threshold voltage and subthreshold slope shift. The contribution of oxide traps to threshold voltage shift and 1/f noise is analyzed through quantitative approach in the light of correlated fluctuation theory. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise, suggesting that experimental results are in agreement with mobility fluctuation theory whereas correlated number fluctuation theory explains the result assuming only a fraction of total oxide charge at a given energy level participates in the generation of low-frequency noise.     

电应力对GaAlAs红外发光二极管低频噪声的影响

在宽范围偏置条件下,测量了电应力前后GaAlAs红外发光二极管（IRED）的低频噪声,发现应力前后1／f噪声随偏置电流变化的规律没有改变,但应力后1／f噪声幅值比应力前增加大约i00倍。基于载流子数和迁移率涨落的理论分析表明,GaAlAs IRED的1／f噪声在小电流时反映体陷阱特征,大电流时反映激活区陷阱特征,1／f噪声的增加归因于电应力在器件有源区诱生的界面陷阱和表面陷阱,因而,1／f噪声可以用来探测电应力对该类器件有源区的潜在损伤。     

1/f noise model of fully overlapped lightly doped drain MOSFET

This paper presents an analytical 1/f noise model of fully overlapped lightly doped drain MOSFET incorporating the voltage drop in the n^- region due to the parasitic resistance. The FOLD structure has lesser noise effect than LDD MOSFET and the predicted results are verified with experimental data     

MOSFET effective channel width determination by nonlinear optimization

Accurate determination of MOSFET effective channel width W_eff is important for process control and device design. Existing methods to determine W_eff are sensitive to measurement noise, and to nonlinearities in the data. In this paper we present a new method to determine W_eff that overcomes these problems. The method uses nonlinear optimization, and is based on a drain current model that accounts for the variations of W_eff, of series resistance, and of threshold voltage, with masked channel width and gate bias. We also show that our new method is more accurate and less sensitive to measurement procedure than other methods.     

MOSFET effective channel length, threshold voltage, and seriesresistance determination by robust optimization

MOSFET parameters, such as effective channel length, series resistance, and channel mobility, are important for process control and device design. These parameters are typically obtained from intercepts and slopes of plots of intermediate quantities, such as peak transconductance, derived from I-V data. Commonly, the intercept of a plot is found by extrapolation. However, the extrapolation process is sensitive to measurement errors. In addition, the plots often show nonlinear behavior, hence slopes and intercepts cannot be determined accurately. It is shown how these problems can be overcome by using a nonlinear optimization procedure to determine those MOSFET parameters, by explicitly identifying them as the parameters of a simple, widely used MOSFET model that is a good approximation in the triode region of operation. The results of five tests of robustness and accuracy that show that the method is significantly more accurate and robust than a number of other methods are presented     

Temperature dependency of 0.1 μm partially depleted SOI CMOSFET

This work investigates the floating body effect (FBE) on the partially depleted SOI devices at various temperatures for high-performance 0.1 μm MOSFET. The thermal effect on the device's characteristics was investigated with respect to the body contacted MOSFET (BC-SOI) and floating body MOSFET without body contacted (FB-SOI). It is found that the threshold voltage (Vth) and the off state drain current (I_OFF) of the BC-SOI devices are more temperature sensitive than those of the FB-SOI devices. For operation at higher temperatures, there is no apparent difference in driving capability between the BC-SOI and FB-SOI MOSFETs