ISO/IEC JTC1/SC36教育技术标准领域最新动态

2010年9月6～12日,ISO/IEC JTC1/SC36(信息技术学习、教育和倍训)第22届全体会议及工作组会议在美国宾夕法尼亚州州立学院召开,来自30多个国家的60余名代表参加了此次会议.中国代表团重点参加了WG2、WG3、 WG4、 WG5和WG6工作组会议及全体会议.     

SO／IEC JTC1／SC36教育技术标准领域最新动态

2010年3月6～15日,ISO／IEC JTC1／SC36（信息技术学习、教育和培训）第21届全体会议在日本大阪召开,中国五位专家出席了会议。中国代表团重点参加了WG2、WG3、WG4和WG6工作组及全体会议。     

ISO／IECJTC1／SC36教育技术标准领域最新动态

2009年3月19～26日,ISO/IEC JTC1/SC36国际数字教育技术标准化组织第19次工作会议在新西兰惠灵顿举行,来自美国、德国、中国等国家的60余名代表参加了会议.由全国信息技术标准化技术委员会教育技术分技术委员会组成的中国代表团一行10人出席了会议,中国代表团重点参加了WG3、WG4、WG6工作组及全体会议.     

2012年ISO/IECJTC1/SC31年会和工作组会议报道

2012年6月4～8日,ISO/IEC JTC 1/SC31自动识别和数据采集分技术委员会在美国召开了WG7、WG4/SG6、 WG2、WG4等工作组会议和第18届年会.中国代表团共七名成员参会,分别来自中国电子技术标准化研究院、中国物品编码中心、上海秀派电子科技有限公司和西安西电捷通无线网络通信股份有限公司等单位.     

IEC/TC110 2014年第一次会议主要议题

5月30日～6月3日,IEC/TC110(电子显示器件技术委员会)2014年第一次各工作组会议在美国圣地亚哥召开,包括WG2、WG5、WG6、WG7、WG8、 WG9、 WG10、BLU、光学测试方法信息交流会以及AGS顾问战略组会议.来自海信、京东方、浙大三色、东南大学、中国电子技术标准化标准院等单位的十余位中国专家参加了此次会议.     

IEC/TC110 2012年工作组会议报道

2012年6月初,IEC/TC110各个工作组、项目组(包括WG2、WG4、WG5、WG6、WG7、WG8、PT6、HHG2等)在美国波士顿召开了会议,我国有14位专家参加了各工作组会议。会议重点内容如下。1 WG2—LCD会议详细讨论了WG2正在制修订的液晶系列(IEC 61747液晶显示器件系列)标准项目14项,确     

ISO/IECJTC1/SC34文档描述与处理语言全会概要

2011年9月26日至10月1日,ISO/IEC JTC1/SC34(文档描述与处理语言分技术委员会)全会及WG1、WG4、WG5工作组会议在韩国釜山举行,来自巴西、中国、德国、日本、韩国、英国、美国、ECMA国际、OASIS的国家成员体和联络组织参加了本次会议.我国代表参加了WG4和WG5工作组会议及SC34全会.     

ISO/IEC JTC1/WG7传感器网络工作组第六次全会召开

2012年9月10～14日,ISO/IEC JTC1/WG7(传感器网络工作组)第六次全体会议在德国召开。来自中国、德国、芬兰、韩国、美国和英国等国家成员体的专家,以及来自IEEE、OGC和ITU-T SG16等组织的联络代表共20名专家参加会议。由来自工     

2016年ISO/IEC JTC1/WG7第13次全会要点

3月8~10日,ISO/IEC JTC1/WG7(传感器网络工作组)第13次全体会议在葡萄牙波尔图召开。本次会议由葡萄牙波尔图高等工程学院(CISTER)研究中心承办。来自中国、韩国、葡萄牙、芬兰四个国家成员体的13名专家参加了本次会议,中国代表团由中国电子技术标准化研究院、重庆邮电大学、无锡物联网产业研究院的四名专家组成。     

2012年ISO/IEC JTC1/SC34年会主要议题

2012年10月15～19日,ISO/IECJTC1/SC34年会在英国伦敦举行。出席本次年会的成员来自6个国家成员体与1个联络组织。期间,AHG4、WG1、WG2、WG4和WG5召开了工作组会议。ISO/IECJTC1/SC34(文档描述与处理语言分技术委员会)是JTC1中开展描述和处理复杂多媒体文档,对文档结构、语言和相关设施进行标准化工作的分技术委员会,主要工作内容包括:描述文档逻辑结构及其支持设施的语言(OOXML、ODF);在WEB环境下,描述类似文档对象的语言(HTML、XML);     

Performance improvement in tensile-strained In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As metamorphic HEMT

This paper proposes a In/sub 0.5/Al/sub 0.5/As/In/sub x/Ga/sub 1-x/As/In/sub 0.5/Al/sub 0.5/As (x=0.3-0.5-0.3) metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.     

Very low-noise Al/sub 0.3/Ga/sub 0.7/As/Ga/sub 0.65/In/sub 0.35/As/GaAs single quantum-well pseudomorphic HEMTs

AlGaAs/GaInAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700 mS/mm. At 18 GHz, a minimum noise figure of 0.55 dB with 15.0 dB associated gain was measured. At 60 GHz, a minimum noise figure as low as 1.6 dB with 7.6 dB associated gain was also obtained. This is the best noise performance yet reported for GaAs-based HEMTs.<>     

A 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode array

We report a 12 /spl times/ 12 In/sub 0.53/Ga/sub 0.47/As-In/sub 0.52/Al/sub 0.48/As avalanche photodiode (APD) array. The mean breakdown voltage of the APD was 57.9 V and the standard deviation was less than 0.1 V. The mean dark current was /spl sim/2 and /spl sim/300 nA, and the standard deviation was /spl sim/0.19 and /spl sim/60 nA at unity gain (V/sub bias/ = 13.5 V) and at 90% of the breakdown voltage, respectively. External quantum efficiency was above 40% in the wavelength range from 1.0 to 1.6 /spl mu/m. It was /spl sim/57% and /spl sim/45% at 1.3 and 1.55 /spl mu/m, respectively. A bandwidth of 13 GHz was achieved at low gain.     

Al/sub 0.3/Ga/sub 0.7/As/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) doped-channel field-effect transistors (DCFET's)

The properties of both lattice-matched and strained doped-channel field-effect transistors (DCFET's) have been investigated in AlGaAs/In/sub x/Ga/sub 1-x/As (0/spl les/x/spl les/0.25) heterostructures with various indium mole fractions. Through electrical characterization of grown layers in conjunction with the dc and microwave device characteristics, we observed that the introduction of a 150-/spl Aring/ thick strained In/sub 0.15/Ga/sub 0.85/As channel can enhance device performance, compared to the lattice-matched one. However, a degradation of device performance was observed for larger indium mole fractions, up to x=0.25, which is associated with strain relaxation in this highly strained channel. DCFET's also preserved a more reliable performance after biased-stress testings.<>     

Morphological and electrical characterization of SixCryCzBv thin films

Si_xCr_yC_zB_v thin films with several compositions have been studied for integration of high precision resistors in 0.8 μm BICMOS technology. These resistors, integrated in the back-end of line, have the advantage to provide high level of integration and attractive electrical behavior in temperature, for analog devices. The film morphology and the structure have been investigated through transmission electron microscopy analysis and have been then related to the electrical properties on the base of the percolation theory. According to this theory, and in agreement with experimental results, negative thermal coefficient of resistance (TCR) has been obtained for samples with low Cr content, corresponding to a crystalline volume fraction below the percolation threshold.Samples with higher Cr content exhibit, instead, a variation of the TCR as a function of film thickness: negative TCR values are obtained for thickness lower than 5 nm, corresponding to a crystalline volume fraction below the percolation threshold; positive TCR are obtained for larger thickness, indicating the establishment of a continuous conductive path between the Cr rich grains. This property seems to be determinant in order to assure the possibility to obtain thin film resistors almost independent on the temperature.     

Highly linear Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMTs

We report an Al/sub 0.3/Ga/sub 0.7/N-Al/sub 0.05/Ga/sub 0.95/N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 /spl times/100 /spl mu/m HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f/sub T/) of 12 GHz and a peak power gain cutoff frequency (f/sub max/) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.     

Comparison between Pt/TiO2/Pt and Pt/TaOX/TaOY/Pt based bipolar resistive switching devices

Nonvolatile memories have emerged in recent years and have become a leading candidate towards replacing dynamic and static random-access memory devices. In this article, the performances of TiO₂ and TaO₂ nonvolatile memristive devices were compared and the factors that make TaO₂ memristive devices better than TiO₂ memristive devices were studied. TaO₂ memristive devices have shown better endurance performances (10⁸ times more switching cycles) and faster switching speed (5 times) than TiO₂ memristive devices. Electroforming of TaO₂ memristive devices requires~4.5 times less energy than TiO₂ memristive devices of a similar size. The retention period of TaO₂ memristive devices is expected to exceed 10 years with sufficient experimental evidence. In addition to comparing device performances, this article also explains the differences in physical device structure, switching mechanism, and resistance switching performances of TiO₂ and TaO₂ memristive devices. This article summarizes the reasons that give TaO₂ memristive devices the advantage over TiO₂ memristive devices, in terms of electroformation, switching speed, and endurance.     

Electrooptic ferroelectric Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films

We report on waveguiding and electrooptic properties of epitaxial Na/sub 0.5/K/sub 0.5/NbO/sub 3/ films grown by radio-frequency magnetron sputtering on Al/sub 2/O/sub 3/(11_02) single crystal substrates. High optical waveguiding performance has been demonstrated in infrared and visible light. The in-plane electrooptic effect has been recorded in transmission using a transverse geometry. At dc fields, the effective linear electrooptic coefficient was determined to 28 pm/V, which is promising for modulator applications.