半导体纳米材料Zn(en)3 Se,ZnSe及其光学性能研究

以有机溶剂热技术制备片状Zn（en）3Se（en为乙二胺）纳米材料,DTG、IR、XRD分析结果表明该化合物中乙二胺与中心离子Zn^2＋通过配位键相结合;以制得的纳米Zn（en）3Se为母体,在氮气氛中煅烧至980℃,热分解制得棒状纳米ZnSe;以TEM、ED初步研究了两者的形貌、结构;以提拉法分别将Zn（en）3Se、ZnSe纳米材料涂布在ITO导电玻璃上,制得纳米颗粒／ITO复合膜,并研究其光学特性。结果表明,Zn（en）3Se属立方晶系,呈片状结构;ZnSe属六方纤锌矿型,棒直径在40nm左右;可能的生长机理是乙二胺作为模板分子,首先嵌入到ZnSe无机结构框架中,接着受热分解逃逸出无机框架形成一维纳米棒。PL分析表明Zn（en）3Se的荧光红移至448nm处。     

类金刚石薄膜的激光损伤特性测试与分析

使用脉宽12ns，波长1064nm调Q Nd：YAG激光器对真空阴极电弧沉积（VCAD）法制备的类金刚石薄膜进行抗激光损伤测试，结果表明，VCAD法镀制的薄膜抗激光损伤阈值为0．6J／cm^2。通过对热冲击效应的数值计算，得到了光斑中心的温度场和薄膜表面的应力场分布。研究表明，热应力在类金刚石薄膜的破坏过程中起主导作用，脉冲电弧沉积的DIE薄膜的激光损伤主要源于应力破坏。     

CdTe@Fe3O4磁性复合纳米粒子的合成与表征

本文通过层层自组装技术（1ayer-by—layer,LBL）成功制备了CdTe@Fe3O4磁性荧光复合纳米粒子,并对其特性和应用进行了讨论．首先,采用化学共沉淀法,以NaOH为沉淀剂,Fe^2＋和Fe^3＋物质的量的比为1：2．在50℃水相中电磁搅拌30min,制备出具有磁性的纳米Fe3O4,然后表面修饰1,6-己二胺．通过透射电镜（transmission electron microscopy,TEM）对其进行观察,粒径在10nm左右．核壳cdTe@Fe3O4复合功能纳米粒子的合成表明：Fe3O4和cdTc物质的量的比为1：3,pH=6．0,温度30℃,反应时间30min为其最佳合成条件．通过TEM、紫外和荧光光谱对合成的纳米粒子分别进行了表征．cdTe@Fe3O4粒径在12～15nm,最大发射波长从530nm红移到570nm,而最大吸收波长则从530nm红移到535mm．结果表明,磁性Fe3O4表面成功覆盖了CdTe壳层．核壳型CdTe@Fe3O4磁性荧光复合纳米粒子的应用能够实现对DNA进行简便快捷的标记、传感和分离．     

表面修饰LaF3：Tb3＋纳米粒子的合成及敏化发光研究

以油酸（OA）作为表面修饰剂,在乙醇一水体系中合成了油酸修饰的LaF3：Tb3＋纳米粒子（OA—LaF3：Tb3＋）,用红外光谱（IR）、X-射线衍射分析（XRD）、透射电镜（TEM）、紫外光谱（UV）、荧光光谱（FS）对所合成的纳米粒子进行了表征和荧光性能研究,结果表明,OA与纳米粒子发生了化学键合作用;所制备的纳米粒子在三氯甲烷中的溶解性很好;纳米粒子大小均匀,粒径约为10nm;纳米粒子的晶相为LaF,的六方体结构;在312nm紫外光激发下,纳米粒子发射Tbn的特征荧光,表明表面修饰剂OA对Tbn具有较好的敏化作用。     

稀土掺杂复式钨酸盐纳米晶体的制备及发光性能

应用水热合成技术制备了稀土掺杂复式钨酸盐NaRe（WO4）2（Re=La,Y,Gd）纳米晶体,水热合成温度随Re^3＋种类的不同而呈现较大的差异.稀土离子在NaRe（WO4）2纳米晶体中处于非反演对称中心位置.在980nm红外光激发下,Yb^3＋和Er^3＋共掺的NaRe（WO4）2纳米晶体可产生明显的绿色上转换发光,发光机理为双光子过程.     

飞秒激光烧蚀材料表面产生纳米波纹结构的实验

利用飞秒脉冲激光烧蚀可以获得远小于激光中心波长（775nm）量级的周期条纹．通过多脉冲飞秒激光烧蚀Ni、Al、Cu、Ti和Si等材料表面的实验,得到材料表面产生光栅的周期均小于飞秒激光中心波长;采用对比实验,改变入射光的偏振特性,发现波纹周期方向随入射光偏振方向的改变而改变;不改变激光偏振态、脉冲能量为4．2J／cm^2时,沿波纹周期走向,发现平台移动速度为0．1mm／s时,可获得清晰的551nm的金属周期结构;最后应用上述实验结果,在铜片表面制备了长为几十微米、周期为551nm的微纳光栅结构。     

脉冲激光参数对单粒子翻转阈值能量的影响

分析了在激光模拟单粒子效应试验中激光波长、束斑大小、脉冲能量、脉冲宽度等脉冲激光参数对阈值能量的影响。其中,利用A．Douin理论预测的单粒子翻转（SEU）激光阈值能量与作者的试验结果相吻合,同时,采用阈值LET等效原理对激光诱发单粒子翻转的脉冲阈值能量标定系数计算的结果表明：波长为1064nm的皮秒激光脉冲阈值能量等效重离子LET值与器件敏感体积的电荷收集深度无关。     

非对称光纤反射镜的可调谐光纤激光器

提出一种非对称窄带光纤环形反射镜结构的可调谐掺铒光纤激光器。980nm泵浦光对掺铒有源光纤进行抽运,高双折射光纤、偏振控制器（PC）和光纤耦合器构成窄带光纤反射镜,窄带光纤反射镜和普通光纤反射镜组成激光谐振腔,利用窄带光纤反射镜工作带宽纳米量级的特性得到单纵模激光。调整偏振控制器改变反射镜对不同波长的反射率,实现可变波长的激光输出。实验表明,该激光器的工作带宽为8nm,120mW泵浦光条件下最大输出功率为4mW,3dB带宽（脉冲的半高宽度）小于0．2nm,边模抑制比为20dB以上,在1527nm～1535nm的波长范围内观察到稳定激光输出。     

不同晶型La2O3：Eu3＋纳米棒的制备及发光性质

以阴离子交换树脂为原料,液相反应制备了不同晶型La2O3：Eu3＋纳米棒,通过XRD、SEM、HRTEM和EDS对La2O3：Eu3＋纳米棒进行了分析和表征,结果表明,经650℃焙烧处理后制备的六方La203：Eu3＋纳米棒,直径为40～100nm,长度约2μm;当焙烧温度升高到850℃时,相变为立方相结构;利用D荧光光谱确定La2O3：Eu3＋纳米棒的最佳监测波长和激发波长,观察到在394nm的激发波长下Eu3＋在六方和立方晶型La2O3纳米棒中的主发射峰均为5D0→7F2跃迁,分别位于615nm和625nm处,且Eu3＋在六方相结构中的发光性质优于立方相结构。     

氢等离子体电弧法Mg／TiO2复合纳米粒子的制备与表征

采用氢等离子体电弧法,在H2＋Ar气氛下制备出Mg／TiO2复合纳米粒子．通过X射线衍射仪（XRD）、红外分析（FT—IR）、高分辨透射电镜（HRTEM）对纳米粒子的化学成分、晶体结构和表面形貌进行了分析,发现具有六方形晶体惯态的镁粒子通过表面包覆一层TiO2后形成了球形粒子;分析了其形成过程．热重分析（TGA—SDTA）结果表明,Mg／TiO2复合纳米粒子比纯Mg纳米粒子抗氧化温度提高30～40℃．     

三种波长测定COD比较兼论无汞对测定值的影响以及汞银的回收

综述密封高温快速测定COD在610 nm、420 nm和348 nm三种波长条件下的特点。前二者已定为国家标准方法,研究发现348nm灵敏度最高,可以测定超低量程的COD,其准确度4.5%、精密度5.2%,检出限1.6 mg/L,建议也将其定为国家标准方法。COD测定都加Hg^2＋掩蔽Cl^-,无汞法不加Hg^2＋,只加Ag＋或加Ag＋又加Cr^3＋;前者COD测定值偏高,后者的Cr^3＋使Cr（V1）/Cr^3＋电极电势下降,虽然有抑制Cl^-的氧化作用,但灵敏度下降,有机物氧化率下降,测定结果偏低较大。如果要求测定准确度高,无汞不行。测定废液中加入铁或铜,回收汞银。     

煅烧温度对微米级NaYF4：Eu^3＋六棱柱微结构及荧光性能的影响

以EDTA为络合剂,采用水热法一步合成了六方相NaYF4：Eu^3＋ 六角微米棱柱,晶粒大小均一,长度为2—3μm,直径为500nm。利用X射线粉末衍射（XRD）、扫描电镜（SEM）、荧光光谱以及透射电子显微镜（TEM）等手段对不同温度煅烧后的产物的物相结构、微观形貌、荧光性能和掺杂状态等进行了分析,结果表明,煅烧温度对NaYF4：Eu^3＋的晶体结构影响不大,仍为六方相晶型,但对晶粒形态和形貌有显著影响,改善了Eu^3＋在基质中的掺杂状态及NaYF4：Eu^3＋的荧光性能,其中在300℃下煅烧,样品仍能保持稳定的六角棱柱形状,可获得最佳的荧光性能。在395nm光激发下,NaYF4：Eu^3＋样品显示出较强的橙色（590nm）和红色（615nm）发光,分别来自于Eu^3＋离子^5D0→^7F1和^5Dc→^7F2的跃迁．     

Fluorescence spectroscopy of electrochemically self-assembled ZnSe and Mn:ZnSe nanowires

We report room temperature fluorescence spectroscopy (FL) studies of ZnSe and Mn-doped ZnSe nanowires of different diameters (10, 25, 50?nm) produced by an electrochemical self-assembly technique. All samples exhibit increasing blue-shift in the band edge fluorescence with decreasing wire diameter because of quantum confinement. The 10?nm ZnSe nanowires show four distinct emission peaks due to band-to-band recombination, exciton recombination, recombination via surface states and via band gap (trap) states. The exciton binding energy in these nanowires exhibits a giant increase (～10-fold) over the bulk value due to quantum confinement, since the effective wire radius (taking into account side depletion) is smaller than the exciton Bohr radius in bulk ZnSe. The 25 and 50?nm diameter wires show only a single FL peak due to band-to-band electron-hole recombination. In the case of Mn-doped ZnSe nanowires, the band edge luminescence in 10?nm samples is significantly quenched by Mn doping but not the exciton luminescence, which remains relatively unaffected. We observe additional features due to Mn(2+) ions. The spectra also reveal that the emission from Mn(2+) states increases in intensity and is progressively red-shifted with increasing Mn concentration.     

Absolute infrared absorption measurements in optical coatings using mirage detection

Absolute measurements of the optical absorption at λ=10.6 μm of BaF₂ thin film grown on a ZnSe substrate and bare ZnSe substrate surface were performed by collinear photothermal deflection technique. Absorption values were obtained in an absolute manner by fitting experimental data to the theoretical expressions of beam deflection for two particular cases: when thermal wave extends far from the laser spot and the opposite, when the heated region does not stretch beyond the laser spot. The validity of the theoretical models were tested in the range of modulation frequencies from 20 Hz to 2700 Hz. This method was also applied to the analysis of fused silica and sapphire bulk samples in order to be used as reference absorbing media in the infrared spectral range. Optical absorption of BaF₂ thin film and ZnSe substrate surface were also deduced from the same theoretical approach using sapphire as a bulk reference medium. From both calculation methods an absorptance of 1200 ppm for BaF₂ thin film and of 425 ppm for ZnSe plate surface were measured.     

Wurtzite ZnSe quantum dots: synthesis, characterization and PL properties

A facile method for synthesis of monodispersed, starch-capped ZnSe nanoparticles at room temperature is being reported. The nanoparticles exhibited strong quantum confinement effect with respect to the bulk ZnSe. The transmission electron microscopy image indicated that the particles were well dispersed and spherical in shape. The X-ray diffraction analysis showed that the ZnSe nanoparticles were of the wurtzite structure, with average particle diameter of about 3.6 nm. The Fourier transform infrared spectrum confirmed the presence of starch as passivating agent.     

Optical characteristics of thin ZnSe films of different thicknesses

Polycrystalline ZnSe films of thicknesses 54–785 nm deposited on glass substrates by thermal evaporation were investigated. X-ray diffraction analysis was carried out on as-deposited and annealed films to determine their structure. The ZnSe films were polycrystalline of cubic structure with preferred [111] orientation. Transmission and reflection at normal incidence were performed on ZnSe films in the wavelength range 350–2500 nm to determine the optical constants and optical energy gap. The optical gaps of ZnSe films show remarkable dependence on the film thickness. Analysis of the absorption data revealed the existence of two transition processes (with energy gaps at 2.7 and 2.22 eV for the bulk ZnSe).     

Microwave-assisted synthesis and highly photocatalytic activity of MWCNT/ZnSe heterostructures

The multi-walled carbon nanotubes (MWCNTs) coated with the face-center cubic ZnSe nanoparticles with a uniform and small diameter have been prepared to form MWCNT/ZnSe heterostructures by microwave irradiation. The morphology, loading quantity and size of the ZnSe nanoparticles in the range of 15–50 nm can be controlled easily by adjusting the microwave power, pH value of the initial solution, the molar ratios of the Zn(AC)₂/MWCNTs and the appropriate complexing agent. The photoluminescence measurement indicates that the MWCNT/ZnSe heterostructures are blue-shifted compared to reported bulk ZnSe. The UV–vis absorption spectra of the heterostructures appears two sharp absorption peaks at 336 and 344 nm, respectively. It was demonstrated that the heterostructures could photodegrade the fuchsine acid in the solution with highly photocatalytic activity.     

Physical investigation of ZnSe QDs synthesized by polyol method at 200 °C

In this paper, zinc selenide nanoparticles powder was successfully synthesized using rapid polyol method. The preparation method was changed by using new Se solvents in the final stage to delete seleniums which have not participated in reaction product. This change in the preparation method increased the purity of final product (92 %); and using selenium’s solvents as detergents caused the production of ZnSe with roughly 100 % purity. X-ray diffractions showed that the samples had a cubic structure with lattice constant equalling 5.6699 Å and with 5.5 nm for crystallite size. Atomic force microscopy (AFM) and high resolution transmission electron microscopy (HRTEM) images showed that the particles were almost spherical and well crystallized ZnSe nanoparticles were formed. The average sizes of nanoparticles were 15 and 16.4 nm for AFM and HRTEM, respectively. Absorption Spectra of all samples showed a blue shift in comparison with bulk ZnSe. It showed low absorption in a wide range of wavelengths. Band gap energy of the pure ZnSe nanoparticles was found to be 4.51 eV, which is higher than that of the bulk value of ZnSe (2.67 eV). Photoluminescence spectra of the samples showed emission at 450–500 nm wavelengths at room temperature which are useful for the application of solar cells, quantum dot light-emitting diodes and blue organic light-emitting diodes devices.     

One-pot room temperature synthesis of biopolymer-capped ZnSe nanoparticles

The synthesis of monodispersed, starch-capped ZnSe nanoparticles via a facile, “green” and environmentally benign route at room temperature is being reported. The nanoparticles exhibited strong quantum confinement effect with respect to the bulk ZnSe. The transmission electron microscopy (TEM) image indicated that the particles were well dispersed and spherical in shape. The X-ray diffraction (XRD) analysis showed that the ZnSe nanoparticles were of the wurtzite structure, with average particle diameter of about 3.50 nm. The Fourier transform infrared (FT-IR) spectrum confirmed the presence of starch as passivating agent.     

Advanced research into the growth mechanism and optical properties of wurtzite ZnSe quantum dots

Zinc selenide (ZnSe) quantum dots (QDs) with the hexagonal wurtzite structure were successfully prepared using a safe, controllable ethylenediamine-mediated solvothermal method in the absence of surfactants. This new synthesis process of the wurtzite ZnSe QDs was described and the growth mechanism of QDs was proposed. The room-temperature photoluminescence (PL) spectrum of the wurtzite ZnSe QDs (about 4 nm) showed a strong near-band-edge emission peak at 422 nm. The near-band-edge emission peak was blue-shifted compared to that of the bulk ZnSe due to the quantum confinement effects; the peak also displayed a progressive red-shift with increasing the excitation power and an associated reduction in peak energy of up to 300 meV. Band gap renormalization in the electron–hole plasma regime might be used to explain this phenomenon. No previous published research regarding the observed excitation-power-dependent PL properties of the wurtzite ZnSe QDs had been found. Our experimental results contributed valuable insights into the optical properties of the wurtzite ZnSe QDs; with potential applications in optoelectronics and other areas where advanced uniformly-structured nanocrystalline semiconductor materials were finding increased use.