Application of defected ground structure in reducing the size ofamplifiers

This letter presents a new technique to reduce the size of microwave amplifiers using a defected ground structure (DGS). The DGS on the ground plane of a microstrip line provides an additional effective inductive component, which enables a microstrip line with very high impedance to be realized and shows slow-wave characteristics. The resultant electrical length of the microstrip line with DGS is longer than that of a conventional line for the same physical length. Therefore, the microstrip line with DGS can be shortened in order to maintain the same electrical length, matching, and performances of the basic (original) amplifier. To confirm the validity of this idea, two amplifiers, one of which is designed using a conventional microstrip line and the other is reduced using DGS, are fabricated, measured, and compared. The performance of the reduced amplifier with DGS is quite similar to that of the basic amplifier, even though the series microstrip lines with DGS are much smaller than those of the basic amplifier by 53.8% and 55.6% at input and output matching networks, respectively     

8GHz带有RC稳定网络的AlGaN/GaN HEMTs内匹配功率合成放大器的设计

设计了工作在8GHz的基于AIGaN/GaN HEMTs的内匹配功率合成放大器.输入和输出匹配电路制作在0.381mm厚的氧化铝陶瓷基片上,为了提高整个电路的稳定因子K,在电路输入端增加了片上RC有损网络.在8GHz测出连续波ldB压缩点时的输出功率为PldB=43dBm(20W),线性增益7.3dB,最大PAE为38.1%,合成效率达到70.6%.     

220GHz低噪声放大器研究

基于IHP锗硅BiCMOS工艺,研究和实现了两种220 GHz低噪声放大器电路,并将其应用于220 GHz太赫兹无线高速通信收发机电路。一种是220 GHz四级单端共基极低噪声放大电路,每级电路采用了共基极（Common Base, CB）电路结构,利用传输线和金属-绝缘体-金属(Metal-Insulator-Metal, MIM)电容等无源电路元器件构成输入、输出和级间匹配网络。该低噪放电源的电压为1.8 V,功耗为25 mW,在220 GHz频点处实现了16 dB的增益,3 dB带宽达到了27 GHz。另一种是220 GHz四级共射共基差分低噪声放大电路,每级都采用共射共基的电路结构,放大器利用微带传输线和MIM电容构成每级的负载、Marchand-Balun、输入、输出和级间匹配网络等。该低噪放电源的电压为3 V,功耗为234 mW,在224 GHz频点实现了22 dB的增益,3 dB带宽超过6 GHz。这两个低噪声放大器可应用于220 GHz太赫兹无线高速通信收发机电路。     

应用正交表优化设计高成品率匹配网络和放大器

本文应用数理统计中的正交表设计法研究并设计微波高成品率匹配网络和放大器。给出了Smith圆图上不同阻抗区域所对应的高成品率匹配网络结构,并应用高成品率匹配网络和正交表设计了一个微波FET放大器,其特性和文献[5]用简化实频技术设计的基本相同,但其成品率要比[5]高得多。     

Propagation characteristics of MIS transmission lines withinhomogeneous doping profile

The authors present a hybrid-mode analysis of slow-wave MIS (metal-insulator-semiconductor) transmission lines with a gradually inhomogeneous doping profile. In general it was found that, in comparison with homogeneously doped semiconductor layers, a Gaussian-type doping distribution results in lower losses for the slow-wave mode in both thin- and thick-film MIS CPWs. While the effect of the doping profile is more pronounced in thin-film structures which support a slow-wave mode only up to 3 GHz, it is less significant in thick-film structures. On the other hand, numerical analysis indicates that thick-film structures can support a slow-wave mode at moderate loss up to 40 GHz. The behavior of MIS microstrip lines is similar to that of MIS CPWs, except that for thick-film transmission lines an increase in losses can be observed when the doping profile becomes inhomogeneous. The numerical investigation was carried out using the method of lines. Several transmission lines have been investigated, and results are presented for microstrip, coupled microstrips, and coplanar lines     

Multifunctional microstrip transmission lines integrated with defected ground structure for RF front-end application

This paper presents multifunctional microstrip transmission lines for designing a high port-isolation dual-frequency orthogonally polarized rectangular patch antenna and the antenna-integrated power amplifier. The proposed lines were realized through the integration of defected ground structures (DGSs) with conventional microstrip lines. A spiral-shaped DGS-integrated microstrip line enhances the port isolation of the antenna, while feeding the 2.0-GHz excitation to the antenna and filtering out the 2.5-GHz receiving signal from the other port. High-order harmonic signal suppression of the power amplifier at the 2.5-GHz port was accomplished by the dumbbell-shaped DGS, thereby improving the efficiency of the amplifier. Measurements show an improvement of 20 dB in port isolation and 3% in power-added efficiency relative to an identical RF front-end, but integrated with a conventional patch antenna. An image impedance of the DGS-integrated microstrip lines can be controlled by the integrated DGS geometries. Relatively high-impedances lines, i.e., 150 and 100 /spl Omega/, are effectively implemented using microstrip lines with 75- and 50-/spl Omega/ linewidths by incorporating the spiral- and dumbbell-shaped DGSs, respectively.     

Matched coupled microstrip transistor amplifier methodology

In this paper, we present a generalized methodology for synthesizing narrowband amplifiers in coupled microstrip systems and detail a novel narrowband amplifier in a three-coupled microstrip topology utilizing chip capacitors for matching networks. The purpose of such a configuration is to validate the synthesis of microwave amplifiers in coupled microstrip technology (the ground plane being common to many fabrication technologies) where the planarity inherent to coplanar designs alleviates the need for vias, thereby reducing fabrication cost.     

基于新型输出结构的宽带高效率功率放大器

提出一种具有新型匹配网络的宽带高效率功率放大器,以及利用开路扇形微带线构成的紧凑型输出匹配网络,并给出了阻抗推导过程。该输出匹配网络在一定带宽条件下能满足晶体管的高效率所对应的阻抗设计空间要求。为了进一步拓展带宽,采用阶跃式阻抗匹配方法设计输入匹配网络。通过理论分析与仿真,最后设计并制作了一款频段为1~3.1 GHz的宽带高效率J类功率放大器。测试结果表明,在该频段内漏极效率为61.4%~70.2%,输出功率为39.3~41.7 dBm,增益为9.3~11.7 dB。     

8GHz带有RC稳定网络的AIGaN/GaN HEMTs内匹配功率合成放大器的设计

设计了工作在8GHz的基于AIGaN/GaN HEMTs的内匹配功率合成放大器.输入和输出匹配电路制作在0.381mm厚的氧化铝陶瓷基片上,为了提高整个电路的稳定因子K,在电路输入端增加了片上RC有损网络.在8GHz测出连续波ldB压缩点时的输出功率为PldB=43dBm(20W),线性增益7.3dB,最大PAE为38.1%,合成效率达到70.6%.     

一种双波段可重构功率放大器仿真设计

可重构输入匹配采用一种基于L型的电路结构,通过一个单刀单掷开关电路使该结构接入一段微带线,实现不同工作频率下输入阻抗的自动补偿。输出匹配实现并发双频段工作,在早期三段式微带线的基础上重新进行公式推导,提出了更易实现的四段微带线串联结构。该功率放大器采用了可重构结构与并发双波段匹配网络结合的方式,因此只采用了一个开关。电路结构简单,且开关切换时对电路性能影响较小。仿真结果表明,该功率放大器的匹配状态和性能良好,为现有的可重构功率放大器设计提供了一种思路。     

Status of Lumped Elements in Microwave Integrated Circuits---Present and Future

The use of lumped elements in microwave integrated circuits (MICS) is discussed. The design, fabrication, and performance of networks used in both active and passive circuits are described. Studies on amplifier impedance matching and transforming networks have resulted in the achievement of a 35-dB-gain 6-W-CW 26-percent-efficient amplifier at 2.25 GHz using only lumped elements. Construction of lumped-element low-pass filters and 3-dB quadrature hybrids at S band have produced circuits much smaller than, but with performance comparable to, microstrip distributed circuits. At C band a large-impedance transformer operating as a filter had less than 0.4-dB loss for an impedance transformation close to 20:1. The performance of lumped-element circuits through X band is compared with that of distributed circuits from the standpoint of size, economy, and technological applications. Lumped-element circuits are competitive with distributed circuits through 6 GHz and are practical through 12 GHz.     

An X-band four-way combined GaN solid-state power amplifier

An X-band four-way combined GaN solid-state power amplifier module is fabricated based on a self-developed AlGaN/GaN HEMT with 2.5-mm gate width technology on SiC substrate. The module consists of an Al-GaN/GaN HEMT, Wilkinson power hybrids, a DC-bias circuit and microstrip matching circuits. For the stability of the amplifier module, special RC networks at the input and output, a resistor between the DC power supply and a transistor gate at the input and 3λ/4 Wilkinson power hybrids are used for the cancellation of low frequency self-oscillation and crosstalk of each amplifier. Under V_(ds)= 27 V, V_(gs) = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5 dB with a power added efficiency of 17.9%, and an output power of 42.93 dBm; the power gain compression is 2 dB. For a four-way combined solid-state amplifier, the power combining efficiency is 67.5%. It is concluded that the reduction in combining efficiency results from the non-identical GaN HMET, the loss of the hybrid coupler and the circuit fabricating errors of each one-way amplifier.     

20-GHz Band Monolithic GaAs FET Low-Noise Amplifier

A 20-GHs band monolithic GaAs FET low-noise amplifier has been developed. Design and fabrication were performed by obtaining the transmission properties of the microstrip lines on a semi-insulating GaAs substrate. The developed monolithic amplifier consists of a submicron gate GaAs MESFET and the input and output distributed matching circuits on a semi-insulating GaAs substrate measuring 2.75 mm x 1.45 mm. A noise figure of 6.2dB and an associated gain of 7.5 dB were obtained at 21 GHz without any additional tuning adjustments.     

A 60 GHz Medium Power Amplifier for Radio‐over‐Fiber System

We present the design and fabrication of a 60 GHz medium power amplifier monolithic microwave integrated circuit with excellent gain‐flatness for a 60 GHz radio‐over‐fiber system. The circuit has a 4‐stage structure using microstrip coupled lines instead of metal‐insulator‐metal capacitors for unconditional stability of the amplifier and yield enhancement. The gains of each stage of the amplifier are modified to provide broadband characteristics of input/output matching for the first and fourth stages and to achieve higher gains for the second and third stages to improve the gain‐flatness of the amplifier for wideband.     

Slow-wave directional coupler and its applications

The directional coupler and the traveling-wave directional filter made of coupled slow-wave microstrip lines are proposed and their characteristics discussed. These structures exhibit interesting characteristics not readily available in conventional transmission lines.     

并发双波段可重构功率放大器仿真设计

采用分布式PIN开关和并发双波段阻抗变换网络,实现了一种可重构高效率多波段功率放大器。与其他可重构放大器相比,该功率放大器降低了输出匹配电路的设计复杂度和开关对匹配电路的影响,有效节约了频谱资源,电路结构简单。双扇形开路微带线的使用拓展了高输入阻抗偏置电路的带宽。在进行匹配电路设计时,考虑了晶体管的寄生参数。仿真结果表明,该功率放大器具有高输出效率和良好的增益平坦度,验证了该方案的可行性。     

32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performances of a two-stage and a three-stage 32-GHz HEMT (high-electron-mobility transistor) amplifier were evaluated. The amplifiers utilize quarter-micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable DC biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of ten in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while for the three-stage amplifier it was 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light     

应用史密斯圆图提取慢波微带线特征阻抗方法

慢波微带线的多种不连续性和相邻慢波单元的耦合影响了特征阻抗的准确计算,因此在慢波微带线的设计阶段需要一种手段来提取其特征阻抗。提出一种利用史密斯圆图提取慢波微带线特征阻抗的方法,该方法通过观察慢波微带线的反射系数在史密斯圆图中的图像估计其特征阻抗的大小,并通过反射系数极值计算特征阻抗。以梳状慢波微带线为例检验该方法,特征阻抗的提取结果与利用S参数提取的结果十分接近,从而证明该方法是一种可行的慢波微带线特征阻抗提取方法。     

Radiation from a microstrip amplifier

A full-wave method is presented to investigate radiation from a microstrip amplifier. The spectral-domain dyadic Green's function, which takes into account both radiation and surface waves, is used to formulate an integral equation. The method of moments is then employed to find the current densities in microstrips and, subsequently, the scattering parameters of the amplifier. The radiated space and surface waves that are launched from the amplifier can be further expressed in terms of the dyadic Green's function and current densities. To verify the numerical results of scattering parameters and far-field radiation patterns, a UHF-band microstrip amplifier matching with single stubs has been implemented and measured. The comparison between simulation and measurement shows excellent agreement.     

S波段小型化微带低噪声放大器的研制

对具有极低噪声系数的超小型微带放大器进行了设计和讨论。与以往同类工作有很大不同、为了实现LNA小型化的目的,对匹配电路和直流偏置网络采用多次曲折线的形式。常规的纯电路模型仿真方法失效,而采用场路混合仿真的方法。结果表明：采用多次曲折线的形式使实际样品加工尺寸大大缩小;场路混合仿真的设计方法精度高,样品实测性能大大优于预期指标。