基于光纤环形镜的L-波段掺铒光纤放大器增益的提高

提出了一种基于光纤环形镜作为反射器的反射式L-波段掺铒光纤放大器(EDFA)结构。光纤环形镜不但可以反射后向放大自发辐射(ASE)作为二次抽运源，而且还可以反射信号，使信号得到二次放大。当抽运功率为115mW时。在1570～1605nm波长范围内，反射式L-波段掺铒光纤放大器的平坦小信号增益达到29．14dB，与前向抽运方式L-波段掺铒光纤放大器相比(保持平坦性不变)。增益提高了5．33dB。分别输入波长为1580nm和1600nm的信号，反射式L-波段掺铒光纤放大器的饱和输出功率为7．63和7．6dBm．与前向抽运方式L-波段掺铒光纤放大器相比分别提高了2．98和3dB。     

L-波段掺铒光纤放大器增益谱特性研究

对掺铒光纤放大器 (EDFA)在L 波段 (L Band ,15 70～ 16 10nm)的增益谱特性进行了理论和实验研究。理论和实验研究得出在最佳反转粒子数密度 (N=0 39) 条件下 ,掺铒光纤L Band的平坦增益谱宽为 2 2nm(± 0 5dB) ,抽运功率与输入信号功率呈线性关系。实验测得L BandEDFA单信道小信号增益为 33dB。     

由高双折射光纤环镜构成的可变波长输出的L-波段掺铒光纤激光器

报道了一种结构简单的可变波长输出的L 波段线型腔掺铒光纤激光器。其中的波长选择器件为一包括两段高双折射光纤在内的光纤环镜 ,通过调整环镜内偏振控制器的状态可以改变环镜对不同波长的反射率以获得可变波长输出的效果。线型腔内用 980nm激光抽运铒光纤产生的ASE作二次抽运源 ,使腔内铒光纤的增益谱由C 波段位移到L 波段。实验中观察到波长在 1 5 83～ 1 6 0 0nm范围内可变的稳定激光输出 ,波长调谐范围为 1 7nm     

工作在L-波段的可调谐环形腔掺铒光纤激光器

报道了一种波长调谐范围达 4 5nm的L 波段环形腔掺铒光纤激光器。利用偏振调谐的方法 ,可以使该激光器的工作波长在 15 6 0nm到 16 0 5nm范围内调谐 ,调谐范围几乎覆盖了整个L 波段。环形腔内用两段铒光纤作为增益介质 ,采用二次抽运方式 ,由一 980nm激光器抽运其中一段铒光纤产生的放大自发辐射作二次抽运源 ,再对腔内的两段铒光纤进行抽运 ,使它们的增益谱位移到L 波段 ,获得稳定的激光输出。实验中还对环形腔输出耦合器的输出耦合比对激光功率的影响作了研究     

一种新型低噪声并联C+L波段掺铒光纤放大器

提出并论证了一种新的低噪声系数C+L波段掺铒光纤放大器的结构.在该结构中,利用一个前置放大器以减少噪声系数,并利用一个带有光纤布拉格光栅的双通结构以增加L波段增益,同时减少噪声系数.实验结果表明,新宽带放大器的噪声系数减小了约2 dB,并且在1 525～1 605 nm波长范围内,增益提高到了25 dB以上.     

硫系玻璃基掺铒微结构光纤4.5μm波段中红外信号放大特性

为进一步揭示硫系玻璃基掺Er3+微结构光纤作为中红外光纤放大器增益介质的可行性,数值求解了800 nm泵浦波长下Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤中Er3+离子数速率方程和光功率传输方程组,理论研究了4.5μm波段中红外信号的放大特性。结果显示,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤具有较高的信号增益和很宽的增益谱。在50 cm光纤长度上,最大信号增益超过了40 dB,高于30 dB信号增益的放大带宽达到了280 nm(4 420~4 700 nm)。同时,进一步研究分析了4 500 nm波长信号增益与光纤长度、信号输入功率和泵浦功率的关系。研究表明,Ga5Ge20Sb10S65硫系玻璃基掺Er3+微结构光纤是一种理想的可应用于4.5μm波段中红外宽带放大器的增益介质。     

一种简单的高功率L波段超荧光光源

采用双程前向结构,在一根高浓度掺铒光纤中实现了功率高达13.13mW(11.18dBm)、平均波长为1578.53nm的L波段高功率超荧光输出,在1570nm～1620nm间的功率高于9.38mW。可满足分布式光纤光栅传感、DWDM等由C波段向L波段扩展的带宽及功率需求,同时与C波段光匹配后,可得到功率高于20mW的C+L波段宽带高功率光输出。其中采用普通耦合器制作的光纤圈反射器,将后向的C波段ASE重新引回光纤中,提高了抽运源的利用效率和光纤输出光的稳定性,同时分析了光源的输出功率、平均波长、稳定性等随光纤长度、抽运功率的变化特征,对于光源的应用设计提供参考。     

高增益低噪声L波段掺铒光纤放大器实验研究

针对L波段掺铒光纤放大器(EDFA)增益低、噪声大的缺点,提出了L 波段双级级联双程放大的放大器结构,并对优化设计结果进行了实验验证。实验中前级和后级所用的铒纤长度分别为6.5m 和32.5m,泵浦功率分别为130mW 和119mW。在小信号功率(-30dBm)输入条件下、1568～1602nm 波长范围内,放大器输出增益都大于38.84dB 同时增益平坦度优于2.04dB。其噪声指数在整个L 波段都小于5.29dB(1590nm 处噪声指数仅为3.95dB)。实验结果表明此放大器不仅完全满足预放级放大器高增益、低噪声的要求,而且具有成本低、泵浦效率高的优点。     

C+L波段宽带增益平坦铋基掺铒光纤放大器的设计

基于光纤放大器增益谱的宽带平坦化发展需要,设计了一个两段铋基掺铒光纤(Bi-EDF)级联并携带一个C波段(1 530~1 565 nm)宽带光纤布拉格光栅(FBG)的双通结构型铋基掺铒光纤放大器(Bi-EDFA),从理论上研究了其对输入信号的放大特性。研究表明:FBG的引入可以使C和L波段(1 570~1 620 nm)信号分别经历不同长度Bi-EDF的双向传输,各自获得高增益放大,实现增益谱的宽带平坦化。在200 mW的1 480 nm双向对称泵浦下,第一级和第二级Bi-EDF长度分别为50 cm和170 cm时,对于波长间隔为2 nm、每路功率为-30 dBm的56路C+L波段信号的输入,Bi-EDFA高于30 dB的增益带宽达到了90 nm(1 530~1 620 nm),平均增益为35.7 dB,增益起伏仅为2.3 dB。同时,噪声系数得到明显改善。研究结果对于研制具有宽带、增益平坦的C+L波段Bi-EDFA具有实际指导意义。     

一种双抽运结构C+L波段掺铒光纤宽带光源

介绍了一种结构简单、工作在C+L波段掺铒宽带光源。实验中用3dB宽带耦合器作为光纤反射镜,同时利用功率控制电路让光源输出光稳定,先用两个980nm二极管作为抽运源,将后向的C波段ASE重新引回光纤中,提高了抽运源的利用效率和光纤输出光的稳定性,优化掺铒光纤长度,获得了功率高达26.67mW(14.26dBm)的C+L波段ASE光输出,平均波长1550.887nm。之后采用一个980nm和一个1480nm的激光二极管,在输出相对平坦的情况下,得到了最高功率为23.23mW(13.66dBm),平均波长为1556.46nm的C+L波段ASE光输出,光纤环形镜的使用,不仅改善了光源的平坦度,并且大大提高了光光转化效率。     

Gain enhancement in L-band loop EDFA through C-band signal injection

Gain enhancement provided in L-band erbium-doped fiber amplifier (EDFA) with loop configuration and through C-band signal injection is experimentally demonstrated and compared with conventional single-stage L-band EDFA design. Significant backward amplified spontaneous emission suppression in C-band and pump conversion efficiency increase in L-band were observed for varying C-band seed signal wavelength and power levels. Gain and noise figure (NF) performance of loop design L-EDFA is compared with the conventional bidirectionally pumped single-stage L-EDFA design. Gain and NF measurements in the loop configuration have resulted in an up to 9.5-dB increase in gain and up to 2.6-dB degradation in NF at a moderate signal wavelength of 1585 nm.     

采用Sagnac反馈环的高效率宽带L-波段放大自发辐射源

采用掺铒光纤在L-波段的放大自发辐射(ASE)构成的宽带光信号源在光纤传感、器件测试等方面有着广泛的应用需求,而抽运转换是制作这种光源的关键技术之一.基于C-波段放大自发辐射对L-波段信号具有二次抽运作用的机理,在光纤的一端采用Sagnac反馈环将输出的C-波段放大自发辐射反馈回到掺铒光纤中,这些被反馈的C-波段放大自发辐射像注入的信号光一样消耗上能级粒子数而受到放大并沿光纤的同一方向传输,同时成为L-波段放大自发辐射的抽运源.由于Sagnac反馈环减少了泄漏的C-波段放大自发辐射功率,因而抽运转换效率大大提高.实验中,在不加平坦滤波器的情况下,在125 mW 980 nm抽运光输入时输出L-波段放大自发辐射宽谱功率达到14 dBm,抽运转换效率(PCE)达到20%,1 dB带宽达到31.1 nm(1568.9～1600 nm),获得了高转换效率且宽带平坦的L-波段放大自发辐射谱输出.     

一种新型宽带EDFA及其实验研究

文章提出了一种基于三端口增益平坦滤波器、且在拓扑结构上不同于以往并行或串行结构的掺铒光纤放大器（EDFA）的新结构。理论模拟显示，同常规的并行结构EDFA相比，该新型结构在保证C波段EDFA性能的同时亦可将L波段掺铒光纤（EDF）用量减少48％以上，改善L波段泵浦效率55％以上。实验中，我们在C波段使用两只输出功率分别为106．9和109．6mW的980nm泵浦激光器，两段EDF的长度分别为8．5和9．6m，在L波段我们仅用1只80mW的1480nm泵浦激光器，EDF长度为19．8m。试验结果显示，在C＋L波段内得到的信号增益〉23dB，增益平坦度〈0．6dB，噪声指数在C和L波段内分别〈4．4dB和5.6dB。     

Wavelength and power dependence of injected C-band laser on pumpconversion efficiency of L-band EDFA

The effect of wavelength and power of an injected C-band laser on the pump conversion efficiency of a L-band erbium-doped fiber amplifier was studied via numerical simulation and experiment. In the studied C-band wavelength range of 1530-1560 nm, for higher injected power with longer wavelength, the backward output amplified spontaneous emission power is compressed more; but the residual laser power is greater due to the smaller emission coefficient at longer wavelength. Thus there is a best choice for injection wavelength and power. With an injection of -2 dBm at 1550 nm, 4.3 and 2.5 dB of gain enhancement for -12 and -2.6 dBm input at 1586 nm were achieved, respectively     

Gain control in L-band EDFAs by monitoring backward travelingC-band ASE

A novel and simple technique for gain flatness control is reported for gain shifted, long wavelength band (L-band) erbium-doped fiber amplifiers (EDFAs). Utilization of the backward traveling amplified spontaneous emission (ASE) in the C-band is analyzed with respect to controlling the gain tilt observed in the L-band when the total input power of the EDFA is changed. It is shown that a gain flatness of 0.6 dB/30 nm can be achieved over a dynamic range greater than 10 dB by using the backward traveling ASE power in the C-band as a monitor to adjust the copropagating pump power of the EDFA. The proposed technique eliminates the need to extract the output signals from the monitored ASE signal, demonstrating the suitability and simplicity of the proposed technique for wavelength division multiplexed applications     

Coupled structure for wide-band EDFA with gain and noise figureimprovements from C to L-band ASE injection

We propose a novel structure for C plus L-band silica based wide-band erbium-doped fiber amplifiers (W-EDFA's), which use backward amplified spontaneous emission from the C-band EDFA as the pump-mediating injection source for the L-band amplifier unit. Experimental results show gain and noise figure improvements of over 2.6 dB and 0.6 dB, respectively, at -3.5 dBm of L-band input signal power. Spatially resolved numerical analysis confirms the pump-mediating effect of C-band backward ASE in the L-band EDFA for the gain and noise figure improvement, which also provides better understanding on the dynamics of C-band injection seed methods     

Gain clamping in two-stage L-band EDFA using a broadband FBG

A gain-clamped long wavelength band erbium-doped fiber amplifier (L-band EDFA) with an improved gain characteristic is demonstrated by simply adding a broadband conventional band (C-band) fiber Bragg grating (FBG) in a two-stage amplifier system. The FBG reflects backward C-band amplified spontaneous emission (ASE) from the second stage back into the system to clamp the gain. The gain is clamped at about 22.4 dB with a gain variation below 0.4 dB for input signal powers of -40 to -15 dBm. Compared with an unclamped amplifier of similar noise figure values, the small signal gain has improved by 2.4 dB due to the FBG which blocks the backward propagating ASE. At wavelengths from 1570 to 1600 nm, gain of the clamped amplifier varies from 19.4 to 26.7 dB. The corresponding noise figure varies by /spl plusmn/0.35 dB around 5 dB, which is not much different compared to that of the unclamped amplifier.     

A 105-nm ultrawide-band gain-flattened amplifier combining C- and L-band dual-core EDFAs in a parallel configuration

A novel structure for ultrawide-band gain-flattened amplifier by combining two pieces of C- and L-band dual-core erbium-doped fibers is reported. This novel amplifier has a flat gain of 15 dB over a wavelength range of 105 nm (1515-1620 nm). The gain variation for the C-band flat gain region (1515-1555 nm) is 1.3 dB, and for the L-band flat gain region (1562-1620 nm) is 1.5 dB. The noise figure varies from 4.5 to 4.8 dB over the whole bandwidth. The structure of the design is simple without the need of additional expensive components.     

Band selection in broadband loop ASE source using seed signal injection

Band selection in a broadband (C+L) loop amplified spontaneous emission (ASE) source using C-band seed signal injection is experimentally demonstrated and compared with conventional double-pass bidirectionally pumped ASE source designs. Significant suppression in C-band and increase in L-band ASE powers were observed for increasing C-band seed signal power. This enables C-, C+L-, and L-band operations in the loop ASE source with the seed signal power of less than -12 dBm, between -12 and -3 dBm, and higher than -3 dBm, respectively.