High temperature reliability and interfacial reaction of eutectic Sn–0.7Cu/Ni solder joints during isothermal aging

The interfacial reactions and growth kinetics of intermetallic compound (IMC) layers formed between Sn–0.7Cu (wt.%) solder and Au/Ni/Cu substrate were investigated at aging temperatures of 185 and 200 °C for aging times of up to 60 days. After reflow, the IMC formed at the interface was (Cu, Ni)₆Sn₅. After aging at 185 °C for 3 days and at 200 °C for 1 day, two IMCs of (Cu, Ni)₆Sn₅ and (Ni, Cu)₃Sn₄ were observed. The growth of the (Ni, Cu)₃Sn₄ IMC consumed the (Cu, Ni)₆Sn₅ IMC at an aging temperature of 200 °C due to the restriction of supply of Cu atoms from the solder to interface. After aging at 200 °C for 60 days, the Ni layer of the substrate was completely consumed in many parts of the sample, at which point a Cu₃Sn IMC was formed. In the ball shear test, the shear strength decreased with increasing aging temperature and time. Until the aging at 185 °C for 15 days and at 200 °C for 3 days, fractures occurred in the bulk solder. After prolonged aging treatment, fractures partially occurred at the (Cu, Ni)₆Sn₅ + Au/solder interface for aging at 185 °C and at the (Ni, Cu)₃Sn₄/Ni interface for aging at 200 °C, respectively. Consequently, thick IMC layer and thermal loading history significantly affected the integrity of the Sn–0.7Cu/Ni BGA joints.     

Effects of process conditions on reliability, microstructure evolution and failure modes of SnAgCu solder joints

In this study, microstructure evolution at intermetallic interfaces in SnAgCu solder joints of an area array component was investigated at various stages of a thermal cycling test. Failure modes of solder joints were analyzed to determine the effects of process conditions on crack propagation. Lead-free printed-circuit-board (PCB) assemblies were carried out using different foot print designs on PCBs, solder paste deposition volume and reflow profiles. Lead-free SnAgCu plastic-ball-grid-array (PBGA) components were assembled onto PCBs using SnAgCu solder paste. The assembled boards were subjected to the thermal cycling test (−40 °C/+125 °C), and crack initiation and crack propagation during the test were studied. Microstructure analysis and measurements of interface intermetallic growth were conducted using samples after 0, 1000, 2000 and 3000 thermal cycles. Failures were not found before 5700 thermal cycles and the characteristic lives of all solder joints produced using different process and design parameters were more than 7200 thermal cycles, indicating robust solder joints produced with a wide process window. In addition, the intermetallic interfaces were found to have Sn–Ni–Cu. The solder joints consisted of two Ag–Sn compounds exhibiting unique structures of Sn-rich and Ag-rich compounds. A crystalline star-shaped structure of Sn–Ni–Cu–P was also observed in a solder joint. The intermetallic thicknesses were less than 3 μm. The intermetallics growth was about 10% after 3000 thermal cycles. However, these compounds did not affect the reliability of the solder joints. Furthermore, findings in this study were compared with those in previous studies, and the comparison proved the validity of this study.     

Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device

Thick Al wires bonded on chips of power semiconductor devices were examined for thermal cycle tests, then the bonded joints were cut using microtome method, after that those were observed by scanning electron microscope and analyzed by electron back scattered diffraction. Some cracks were observed between Al wires and the chips, unexpectedly the crack lengths were almost constant for −40/150 °C, −40/200 °C and −40/250 °C tests. It is considered that re-crystallization has been progressed during the high temperature side of the thermal cycle tests.Furthermore, joint samples were prepared using high temperature solders such as Zn–Al and Bi with CuAlMn, Direct Bonded Copper insulated substrates and Mo heatsinks. The fabricated samples were evaluated by scanning acoustic microscope before and after thermal cycle tests. Consequently, almost neither serious damages nor delaminations were observed for −40/200 °C and −40/250 °C tests.     

A comparative study of the kinetics of interfacial reaction between eutectic solders and Cu/Ni/Pd metallization

A comparative study of the kinetics of interfacial reaction between the eutectic solders (Sn-3.5Ag, Sn-57Bi, and Sn-38Pb) and electroplated Ni/Pd on Cu substrate (Cu/Ni/NiPd/Ni/Pd) was performed. The interfacial microstructure was characterized by imaging and energy dispersive x-ray analysis in scanning electron microscope (SEM). For a Pd-layer thickness of less than 75 nm, the presence or the absence of Pd-bearing intermetallic was found to be dependent on the reaction temperature. In the case of Sn-3.5Ag solder, we did not observe any Pd-bearing intermetallic after reaction even at 230°C. In the case of Sn-57Bi solder the PdSn₄ intermetallic was observed after reaction at 150°C and 180°C, while in the case of Sn-38Pb solder the PdSn₄ intermetallic was observed after reaction only at 200°C. The PdSn₄ grains were always dispersed in the bulk solder within about 10 μm from the solder/substrate interface. At higher reaction temperatures, there was no Pd-bearing intermetallic due to increased solubility in the liquid solder. The presence or absence of Pd-bearing intermetallic was correlated with the diffusion path in the calculated Pd-Sn-X (X=Ag, Bi, Pb) isothermal sections. In the presence of unconsumed Ni, only Ni₃Sn₄ intermetallic was observed at the solder-substrate interface by SEM. The presence of Ni₃Sn₄ intermetallic was consistent with the expected diffusion path based on the calculated Ni-Sn-X (X=Ag, Bi, Pb) isothermal sections. Selective etching of solders revealed that Ni₃Sn₄ had a faceted scallop morphology. Both the radial growth and the thickening kinetics of Ni₃Sn₄ intermetallic were studied. In the thickness regime of 0.14 μm to 1.2 μm, the growth kinetics always yielded a time exponent n >3 for liquid-state reaction. The temporal law for coarsening also yielded time exponent m >3. The apparent activation energies for thickening were: 16936J/mol for the Sn-3.5Ag solder, 17804 J/mol for the Sn-57Bi solder, and 25749 J/mol for the Sn-38Pb solder during liquid-state reaction. The corresponding activation energies for coarsening were very similar. However, an apparent activation energy of 37599 J/mol was obtained for the growth of Ni₃Sn₄ intermetallic layer during solid-state aging of the Sn-57Bi/substrate diffusion couples. The kinetic parameters associated with thickening and radial growth were discussed in terms of current theories.     

Properties of low temperature Sn–Ag–Bi–In solder systems

The metallurgical and mechanical properties of Sn–3.5 wt%Ag–0.5 wt%Bi–xwt%In (x = 0–16) alloys and of their joints during 85 °C/85% relative humidity (RH) exposure and heat cycle test (−40–125 °C) were evaluated by microstructure observation, high temperature X-ray diffraction analysis, shear and peeling tests. The exposure of Sn–Ag–Bi–In joints to 85 °C/85%RH for up to 1000 h promotes In–O formation along the free surfaces of the solder fillets. The 85°C/85%RH exposure, however, does not influence the joint strength for 1000 h. Comparing with Sn–Zn–Bi solders, Sn–Ag–Bi–In solders are much stable against moisture, i.e. even at 85 °C/85%RH. Sn–Ag–Bi–In alloys with middle In content show severe deformation under a heat cycles between −40 °C and 125 °C after 2500 cycles, due to the phase transformation from β-Sn to β-Sn + γ-InSn₄ or γ-InSn₄ at 125 °C. Even though such deformation, high joint strength can be maintained for 1000 heat cycles.     

The formation and growth of intermetallic compounds and shear strength at Sn–Zn solder/Au–Ni–Cu interfaces

The microstructures and shear strength of the interface between Sn–Zn lead-free solders and Au/Ni/Cu interface under thermal aging conditions was investigated. The intermetallic compounds (IMCs) at the interface between Sn–Zn solders and Au/Ni/Cu interface were analyzed by field emission scanning electron microscopy and transmission electron microscopy. The results showed the decrease in the shear strength of the interface with aging time and temperature. The solder ball with highly activated flux had about 8.2% increased shear strength than that with BGA/CSP flux. Imperfect wetting and many voids were observed in the fracture surface of the latter flux. The decreased shear strength was influenced by IMC growth and Zn grain coarsening. In the solder layer, Zn reacted with Au and then was transformed to the β-AuZn compound. Although AuZn grew first, three diffusion layers of γ-Ni₅Zn₂₁ compounds were formed after aging for 600 h at 150 °C. The layers divided by Ni₅Zn₂₁ (1), (2), and (3) were formed with the thickness of 0.7 μm, 4 μm, and 2 μm, respectively.     

Fatigue analysis of miniaturized lead-free solder contacts based on a novel test concept

The paper presents the method of generating lifetime-prediction-laws on special prepared very stiff specimen. The combination of thin- and thick-film technology allows building up test samples on ceramic very similar to electronic packages including the measurement issues. Influences of pad surface metallurgy, microstructure of solder, ineutectic solder alloys and assembly process parameter are regarded now. The investigation objects provide monitoring of electrical and mechanical damage process of SnAgCu solder bump. Different thermo-mechanical loads will be applied in temperature ranges of 0 to +80 °C, −40 to +125 °C and −50 to +150 °C, where the temperature gradient and cycle frequency also vary. A Variation of four different chip sizes allows the determination of fatigue laws for each temperature profile, to be able to compare in between them. The results of these tests will give universal lifetime-prediction laws for SnAgCu base solder joints. Main goals are to find coefficients for lifetime prediction models such as Coffin–Manson- or Norris–Landzberg-relation, which are transferable in between different electronic packages.     

Effect of Cr additions on interfacial reaction between the Sn-Zn-Bi solder and Cu/electroplated Ni substrates

Intermetallic compounds (IMCs) growth on the Sn-8Zn-3Bi (-Cr) solder joints with Cu and electroplated Ni substrates was investigated after aging at 150 °C. It was found that the IMCs were the Cu₅Zn₈ and Ni₅Zn₂₁ at the solder/Cu and solder/Ni interface, respectively. The IMCs growth rate at the Sn-8Zn-3Bi-Cr/Cu and Ni interface was slower than that at Sn-8Zn-3Bi/Cu interface (about 1/2 times) and Sn-8Zn-3Bi/Ni interface (about 1/4 times) during aging. The reason may be that Cr reacts with Zn and forms the Sn-Zn-Cr phase which block the diffusion of Zn atom to the interface and slow down the IMCs growth rate.     

Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing

In the present study, several under bump metallization (UBM) schemes using either electroplated Ni or electroless Ni (EN) as the solderable layer are investigated. The EN and electroplated Ni are first deposited on Cu/Al₂O₃ substrates, followed by electroplating of thin gold coatings. Joints of 42Sn-58Bi/Au/EN/Cu/Al₂O₃ and 42Sn-58Bi/Au/Ni/Cu/Al₂O₃ are annealed at 145 C and 185CC for 30–180 minutes to investigate the interfacial reaction between the solder and metallized substrates. For 42Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al₂O₃, 42Sn-58Bi/Au/Ni-12.1wt.%P/Cu/Al₂O₃, and 42Sn-58Bi/Au/Ni/CU/Al₂O₃ joints annealed at 145 C, only Ni₃Sn₄ intermetallic compound (IMC) formed at the solder/EN interace. When annealed at an elevated temperature of 185 C, plate-like Ni₃Sn₄ IMC forms at the solder/Ni-5.5wt.%P interface, while a trace of (Ni, Cu)₃Sn₄ IMC is observed at the solder/Ni-12.1wt.%P interface and within the solder region. For the electroplated Ni-based multi-metallization substrate, the Ni₃Sn₄ IMC is present at the solder/Ni interface during annealing at 185 C for a short period of time. In the 42Sn-58Bi/Au/EN/Cu/Al₂O₃ joint, the EN spalls off the EN layer and migrates into the solder region when annealed at 185 C. The interface of the solder/electroplating Ni becomes saw-toothed as the annealing temperature is raised to 185 C. In addition, an enrichment of phosphorus is observed at the interface of the Ni-Sn IMC and EN.     

The microstructure characterization of ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallization

The microstructure of the ultrasmall eutectic Bi-Sn solder bumps on Au/Cu/Ti and Au/Ni/Ti under-bump metallizations (UBMs) was investigated as a function of cooling rate. The ultrasmall eutectic Bi-Sn solder bump, about 50 μm in diameter, was fabricated by using the lift-off method and reflowed at various cooling rates using the rapid thermal annealing system. The microstructure of the solder bump was observed using a backscattered electron (BSE) image and the intermetallic compound was identified using energy dispersive spectroscopy (EDS) and an x-ray diffractometer (XRD). The Bi facet was found at the surface of the ultrasmall Bi-Sn solder bumps on the Au/Cu/Ti UBM in almost all specimens, and the interior microstructure of the bumps was changed with the solidification rate. The faceted and polygonal intermetallic compound was found in the case of the Bi-Sn solder bump on the Au (0.1 μm)/Ni/Ti UBM, and it was confirmed to be the (Au_1−x−yBi_xNi_y)Sn₂ phase by XRD. The intermetallic compounds grown form the Au (0.1 μm)/Ni/Ti UBM interface, and they interrupted the growth of Bi and Sn phases throughout the solder bump. The ultrasmall eutectic Bi-Sn solder bumps on the Au (0.025 μm)/Ni/Ti UBM showed similar microstructures to those on the Au/Cu/Ti UBM.     

Electromigration of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite flip–chip solder bumps with Ti/Ni(V)/Cu under bump metallurgy

We examine electromigration fatigue reliability and morphological patterns of Sn–37Pb and Sn–3Ag–1.5Cu/Sn–3Ag–0.5Cu composite solder bumps in a flip–chip package assembly with Ti/Ni(V)/Cu UBM. The flip–chip test vehicle was subjected to test conditions of five combinations of applied electric currents and ambient temperatures, namely, 0.4 A/150 °C, 0.5 A/150 °C, 0.6 A/125 °C, 0.6 A/135 °C, and 0.6 A/150 °C. The electrothermal coupling analysis was employed to investigate the current crowding effect and maximum temperature in the solder bump in order to correlate with the experimental electromigration reliability using the Black’s equation as a reliability model. From available electromigration reliability models, we also present a comparison between fatigue lives of Sn–37Pb solder bumps with Ti/Ni(V)/Cu and those with Al/Ni(V)/Cu UBM under different current stressing conditions.     

Electromigration Behaviors and Effects of Addition Elements on the Formation of a Bi-rich Layer in Sn58Bi-Based Solders

This study investigates the electromigration (EM) behaviors and effects of the addition elements on the formation of a Bi-rich layer in Sn58Bi-based solders including Sn58Bi (SB), Sn58Bi0.5Ag (SBA) and Sn58Bi0.5Ag0.1Cu0.07Ni0.01Ge (SBACNG) solders. The EM tests were conducted at a relatively high temperature of 373 K and at a current density of 30 kA/cm². Although the dominant diffusing atom was Bi, hillocks were formed from Sn more easily than from Bi. The electrical resistance increased in the solder during the current stressing, and the dominant factor was attributed to the formation of a Bi-rich layer. SBACNG solder showed the highest resistance to the formation of a Bi-rich layer, followed by SBA, and then SB solder. The possible addition elements enhancing the resistance of SBACNG solder are Ag, Ni and Ge. The effects of the addition elements are summarized as follows: (1) Ag distributes in the Sn phase as Ag₃Sn intermetallic compounds (IMCs) that enhance the mechanical strength of Sn; (2) Ni distribution in Bi as Ni-Bi IMCs stabilizes Bi and suppresses its migration; and (3) Ge may distribute in Bi, stabilizing Bi, or Ge exists at the phase boundaries as a precipitate that inhibits Bi migration.     

Effect of displacement rate on ball shear properties for Sn–37Pb and Sn–3.5Ag BGA solder joints during isothermal aging

The interfacial reactions and ball shear properties of ball grid array (BGA) solder joints aged at 170 °C for up to 21 days were investigated with different displacement rates. Two different kinds of solders, Sn–37Pb and Sn–3.5Ag (all wt.%), and an electroplated Ni/Au BGA substrate were employed in this work. A continuous Ni₃Sn₄ intermetallic compound (IMC) layer was formed at the interfaces between both the Sn–37Pb and Sn–3.5Ag solders and the substrate during reflow. After aging, two different reaction layers, consisting of (Au_xNi_1−x)Sn₄ IMC and Pb-rich phase, were additionally observed between the Sn–37Pb solder and the Ni₃Sn₄ IMC layer. The thicknesses of these interfacial reaction layers increased with increasing aging time. After reflow, all the fractures occurred inside the bulk solder. The fracture location of the Sn–37Pb solder joints was shifted toward the solder/Ni interface with increasing aging time and displacement rate, whereas the fracture of the Sn–3.5Ag solder joints mainly occurred inside the bulk solder, irrespective of the aging time and displacement rate. Consequently, the shear properties of the Sn–37Pb solder joints significantly decreased with increasing aging time, whereas those of the Sn–3.5Ag solder joints slightly decreased. The tendency toward brittle fracture of the Sn–37Pb solder joints was intensified with increasing displacement rate. The shear properties of the ductile solder joints increased with increasing displacement rate, while the displacement until fracture, deformation energy and displacement rate sensitivity of the brittle solder joints significantly decreased with increasing displacement rate.     

Temperature profile effects in accelerated thermal cycling of SnPb and Pb-free solder joints

Accelerated thermal cycling (ATC) has been widely used in the microelectronics industry for reliability assessment. ATC testing decreases life cycle test time by one or more of the following means: increasing the heating and cooling rate, decreasing the hold time, or increasing the range of the applied temperature. The relative effect of each of these cycle parameters and the failure mechanisms they induce has been the subject of many studies; however uncertainty remains, particularly regarding the role of the heating and cooling rate. In this research, three conditions with two ramp rates (14 °C/min and 95 °C/min) and two temperature ranges (ΔT = 0–100 °C and −40 to 125 °C) were applied to resistor 2512 and PBGA 256 test vehicles assembled with SnPb and Pb-free solders. The test results showed that the higher ramp rate reduced the testing time while retaining the same failure modes, and that the damage per cycle increased with the temperature difference. For the resistors, the Pb-free solder joints lasted longer than the SnPb joints at the smaller ΔT, but were inferior at the larger ΔT. In contrast, the Pb-free solder joints in the PBGA test vehicles lasted longer than the SnPb solder under both conditions.     

Effects of TMF heating rates on damage accumulation and resultant mechanical behavior of Sn–Ag based solder joints

Solder joint reliability depends on several service parameters such as temperature extremes encountered, dwell times at these temperatures, and the ramp-rates representing the rate at which the temperature changes are imposed. TMF of Sn–Ag based solder alloy joints of realistic dimensions were carried out with dwell of 115 min and 20 min at 150 °C and −15 °C, respectively. Different heating rates were obtained by controlling the power input during heating part of TMF cycles. Surface damage and residual mechanical strength of these solder joints were characterized after 0, 250, 500, and 1000 TMF cycles to evaluate the role of TMF heating rate on the solder joint integrity.     

Reliability study of board-level lead-free interconnections under sequential thermal cycling and drop impact

The sequential thermal cycling (TC) and drop impact test are more reasonable to evaluate the reliability of lead-free solder interconnections compared with separate TC test or drop impact test. In this paper, sequential TC (−40 °C/125 °C, 13 min of soak time, 12 min of dwell time, totally 50 min of cycle time) and drop impact test (a sine impact pulse with a peak acceleration of 1500g and a duration time of 0.5 ms) were conducted to study the failure mechanism of solder interconnections under sequential TC and drop impact test. The TC load has larger effect on the Cu/solder interface at the PCB side than that of Ni (P)/solder interface at the component side. For the thermally cycled samples, the failure location of solder interconnections under drop impact has changed from initiation and propagation along the thin reaction layer (mode 1) between intermetallic compound (IMC) layer and Ni (P) pad at the component side to initiation at the bulk solder and propagation along the Cu₃Sn IMC layer (mode 2) or entirely through the bulk solder (mode 3) at the PCB side. The failure mechanism has also changed from the entirely brittle crack to the mixture of fatigue crack and brittle crack.     

Reliability and RF performance of BGA solder joints with plastic-core solder balls in LTCC/PWB assemblies

In this paper board-level reliability of low-temperature co-fired ceramic (LTCC) modules with thermo-mechanically enhanced ball-grid-array (BGA) solder joint structure mounted on a printed wiring board (PWB) was experimentally investigated by thermal cycling tests in the 0–100 °C and −40 to 125 °C temperature ranges. The enhanced joint structure comprised solder mask defined (SMD) AgPt pad metallization, eutectic solder and plastic-core solder balls (PCSB). Similar daisy-chained LTCC modules with non-collapsible 90Pb10Sn solder spheres were used for a reference test set. The reliability of the joint structures was analyzed by resistance measurements, X-ray microscopy, scanning acoustic microscopy (SAM) and SEM/EDS investigation. In addition, a full-wave electromagnetic analysis was performed to study effects of the plastic-core material on the RF performance of the LTCC/BGA package transition up to millimeter-wave frequencies. Thermal cycling results of the modules with PCSBs demonstrated excellent fatigue performance over that of the reference. In the harsher cycling test, Weibull’s shape factor β values of 7.9 and 4.8, and characteristic lifetime θ values of 1378 and 783 were attained for the modules with PCSBs and 90Pb10Sn solder spheres, respectively. The primary failure mode in all test assemblies was fatigue cracking in eutectic solder on the ceramic side.     

Evaluation of displacement rate effect in shear test of Sn–3Ag–0.5Cu solder bump for flip chip application

An experimental investigation was combined with a non-linear finite element analysis using an elastic–viscoplastic constitutive model to study the effect of ball shear speed on the shear forces of flip chip solder bumps. A solder composition used in this study was Sn–3mass%Ag–0.5mass%Cu. A low cost bumping process has been employed using electroless Ni and immersion Au followed by solder paste stencil printing. A thin layer of intermetallic compound, (Ni_1−xCu_x)₃Sn₄, was formed by the reaction between the solder and electroless Ni with a thickness of about 1.4 μm, while some discontinuous (Cu_1−yNi_y)₆Sn₅ particles were also formed at the interface. The compositions of the resulting compounds were identified using energy dispersive spectrometer (EDS) and electron microprobe analysis (EPMA). Shear tests were carried out over a shear speed range from 20 to 400 μm/s at a shear ram height of 20 μm. The shear force was observed to linearly increase with shear speed and reach the maximum value at the fastest shear speed in both experimental and computational results. The optimum shear speeds for the shear test of solder bumped flip chip were recommended to be not exceeding 200 μm/s. The failure mechanisms were discussed in terms of von Mises stresses and plastic strain energy density distributions.     

Effect of substrate metallization on interfacial reactions and reliability of Sn-Zn-Bi solder joints

The scope of this paper covers a comprehensive study of the lead-free Sn-Zn-Bi solder system, on Cu, electrolytic Ni/Au and electroless Ni(P)/Au surface finishes. This includes a study of the shear properties, intermetallic compounds at the substrate-ball interface and dissolution of the under bump metallization. The Sn-8Zn-3Bi (wt.%) solder/Cu system exhibited a low shear load with thick IMCs formation at the interface. The dissolution of the Cu layer in the Sn-Zn-3Bi solder is higher than that of the other two Ni metallizations. It was found that the formation of a thick Ni-Zn intermetallic compound (IMC) layer at the solder interface of the electrolytic Ni bond pad reduced the mechanical strength of the joints during high temperature long time liquid state annealing. The solder ball shear-load for the Ni(P) system during extended reflow increased with an increase of reflow time. No spalling was noticed at the interface of the Sn-Zn-3Bi solder/Ni(P) system. Sn-8Zn-3Bi solder with electroless Ni(P) metallization appeared as a good combination in soldering technology.     

The influence of Sn–Cu–Ni(Au) and Sn–Au intermetallic compounds on the solder joint reliability of flip chips on low temperature co-fired ceramic substrates

The formation of intermetallic compounds in the solder joint of a flip chip or chip scale package depends on the under bump metallurgy (UBM), the substrate top surface metallisation, the solder alloy and the application conditions. To evaluate the influence of intermetallic compounds on the solder joint reliability, a detailed study on the influence of the UBM, the gold finish thickness of the substrate top surface metallisation, the solder alloy and the aging conditions has been conducted. Flip chips bumped with different solder alloys were reflow-mounted on low temperature co-fired ceramic substrates. The flip chip package was then aged at high temperature and a bump shear test followed to examine the shear strength of the solder joint at certain aging intervals. It was found that the type of UBM has a great impact on the solder joint reliability. With Ni(P)/Au as the UBM, well-documented gold embrittlement was observed when the gold concentration in the eutectic SnPb solder was about 3 wt%. When Al/Ni(V)/Cu was used as the UBM, the solder joint reliability was substantially improved. Copper dissolution from the UBM into the solder gives different intermetallic formations compared to Ni(P)/Au as UBM. The addition of a small amount of copper in the solder alloy changed the mechanical property of the intermetallic compound, which is attributed to the formation of Sn–Cu–Ni(Au) intermetallic compounds. This could be used in solving the problem of the AuSn₄ embrittlement. The formation and the influence of this Sn–Cu–Ni(Au) intermetallic phase are discussed. The gold concentration in the solder joint plays a role in the formation of intermetallic compounds and consequently the solder joint reliability, especially for the Sn–Ag–Cu soldered flip chip package.