Photoluminescence study of the nitrogen content effect on GaAs/GaAs1 − xNx/GaAs/AlGaAs: (Si) quantum well

We study the effect of nitrogen content in modulation-doped GaAs/GaAs_1 − xN_x/GaAs/GaAlAs:(Si) quantum well using low-temperature photoluminescence spectroscopy. The samples were grown on GaAs (001) substrates by molecular-beam epitaxy with different nitrogen compositions. The variation of the nitrogen composition from 0.04% to 0.32% associated to the bi-dimensional electron gas gives a new interaction mode between the nitrogen localized states and the GaAs_1 − xN_x/GaAs energies levels. The red-shift observed in photoluminescence spectra as function of nitrogen content has been interpreted in the frame of the band anticrossing model.     

Coulomb interaction of electron gas in MQWs Si/Si1 − xGex/Si

We present a theoretical analysis of the conduction and valence-band diagrams of SiGe/Si Multiple Quantum Wells (MQWs), having a specific “W” geometry, and designed for emission or photodetection around the 1.55 μm wavelength. Peculiar features have been extrapolated by solving self-consistent Schrödinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection. As a result, Coulomb interaction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces; the injected carrier concentration enhances electron–hole wave functions overlap and the in-plane oscillator strength. These MQWs structures, strain-compensated on relaxed Si_0.75Ge_0.25 pseudo-substrates, are potentially interesting for telecom applications.     

Spectroscopic ellipsometry analysis of GaAs1 − xNx layers grown by molecular beam epitaxy

In this work, we present the effect of nitrogen incorporation on the dielectric function of GaAsN samples, grown by molecular beam epitaxy (MBE) followed by a rapid thermal annealing (for 90 s at 680 °C). The GaAs_1 − xN_x samples with N content up to 1.5% (x = 0.0%, 0.1%, 0.5%, 1.5%), are investigated using room temperature spectroscopic ellipsometry (SE). The optical transitions in the spectral region around 3 eV are analyzed by fitting analytical critical point line shapes to the second derivative of the dielectric function. It was found that the features associated with E₁ and E₁ + Δ₁ transitions are blue-shifted and become less sharp with increasing nitrogen incorporation, in contrast to the case of E₀ transition energy in GaAs_1 − xN_x. An increase of the split-off Δ₁ energy with nitrogen content was also obtained, in agreement to results found with MOVPE GaAs_1 − xN_x grown samples.     

Magnetism in Si1 − xMnx diluted magnetic semiconductor thin films

We have studied the electrical and magnetic properties of p-type semiconductor thin films of Si_1 − xMn_x/Si (x = 0.036 and 0.05) grown by molecular beam epitaxy. Experimental results reveal that the resistivity of the samples decreases gradually with increasing measurement temperature, which can be described well by Mott's variable-range-hopping model. All the samples exhibit the ferromagnetic ordering above room temperature. Among these samples, Si_0.95Mn_0.05 has a higher hole density and magnetization. This indicates an enhancement of hole-mediated ferromagnetic exchange interactions when the Mn-doping concentration is increased.     

Characterization of CuIn1 − xAlxS2 thin films prepared by thermal evaporation

Ingots containing single crystals of the quaternary alloys CuIn_1 − xAl_xS₂ (CIAS) were grown by a horizontal Bridgman method for compositions with x = 0, 0.2 and x = 0.4. (CIAS) thin films were prepared by thermal evaporation technique on to glass substrates. Structural and optical properties of the films were studied in function of the Al content. Band gap, and absorption coefficients were determined from the analysis of the optical spectra (transmittance and reflectance as a function of wavelength) recorded by a spectrophotometer. The samples have direct bandgap energies of 1.95 eV (x = 0), 2.06 eV (x = 0,2) and 2.1 eV (x = 0,4). These optical results were correlated with the structural analysis by X-Ray diffraction.     

Characterization of GaN epitaxial layers on SiC substrates with AlxGa1−xN buffer layers

High quality GaN epitaxial layers were obtained with Al_xGa_1−xN buffer layers on 6H–SiC substrates. The low-pressure metalorganic chemical vapor deposition (LP-MOCVD) method was used. The 500 Å thick buffer layers of Al_xGa_1−xN (0≤x≤1) were deposited on SiC substrates at 1025°C. The FWHM of GaN (0004) X-ray curves are 2–3 arcmin, which vary with the Al content in Al_xGa_1−xN buffer layers. An optimum Al content is found to be 0.18. The best GaN epitaxial film has the mobility and carrier concentration about 564 cm² V⁻¹ s⁻¹ and 1.6×10¹⁷ cm⁻³ at 300 K. The splitting diffraction angle between GaN and Al_xGa_1−xN were also analyzed from X-ray diffraction curves.     

Lattice dynamics of Ga1−xAlxAs studied by ab initio calculations

We have calculated the phonon dispersion and phonon density of states of superlattices of Ga_1−xAl_xAs for x=0.0, 0.25, 0.75 and 1.0 using the ab initio method within the supercell approach and calculating the Hellmann–Feynman forces. A noticeable difference of force constants between Ga–As and Al–As atomic pairs has been found. In any case, Al atoms vibrate in well-separated high-frequency optic modes.     

Composition dependence of optical constants of Ge1 − xSe2Pbx thin films

Optical constants of vacuum-evaporated thin films in the Ge_1 − xSe₂Pb_x (x = 0, 0.2, 0.4, 0.6) system were calculated from reflectance and transmittance spectra. It is found that the films exhibit a non-direct gap, which decreases with increasing Pb content. The variation in the refractive index and the imaginary part of the dielectric constant with photon energy is reported. The relationship between the optical gap and chemical composition in chalcogenide glasses is discussed in terms of the average heat of atomization.     

The structural and electrical property of CuCr1 − xNixO2 delafossite compounds

A series of CuCr_1 − xNi_xO₂ (0 ≤ x ≤ 0.06) polycrystalline samples was prepared. The electrical conductivity was measured in the temperature range of 160–300 K. It was found that the electrical conductivity (σ) increases rapidly with the doping of Ni²⁺ ions. At room temperature, the σ is 0.047 S cm^− 1 for the sample with x = 0.06, which is two orders of magnitude larger than that of the CuCrO₂ sample (9.49E− 4 S cm^− 1). The Seebeck coefficients are positive for all samples, which indicate p-type conducting of the samples. The experimental results imply that it is possible to get higher electrical conductivity p-type transparent conducting oxides (TCO) from CuMO₂ by doping with divalent ions.     

Study of dielectric, magnetic and ferroelectric properties in Bi1 − xGdxFeO3

Gd-doped BiFeO₃ polycrystalline ceramics were synthesized by solid-state reaction method and their dielectric and magnetic properties were investigated. X-ray diffraction pattern showed that Bi_1 − xGd_xFeO₃ (x = 0, 0.05 and 0.1) ceramics were rhombohedral. The Gd substitution has suppressed the usual impurity peaks present in the parent compound and we obtained single phase Bi_0.9Gd_0.1FeO₃ ceramic. Gd substitution reduced the antiferromagnetic Néel temperature (T_N) in Bi_1 − xGd_x FeO_3. An anomaly in the dielectric constant(ε) and dielectric loss(tan (δ)) in the vicinity of the antiferromagnetic Néel temperature (T_N) was observed. Ferroelectric and magnetic hysteresis loops measured at room temperature indicated the coexistence of ferroelectricity and magnetism. The room temperature magnetic hysteresis loops were not saturated, but the magnetic moment was found to increase with increase in Gd concentration.     

Study of optical constants in CdxSe1−x

Thin films of Cd_xSe_1−x (0<x<1) have been deposited by the vacuum evaporation technique onto ultra clean substrates maintained at 300°C. The optical properties (specially transmission spectra) of these films were studied. The wavelength dependence of refractive index and extinction coefficient of the films along with the variation of these constants with composition was studied.     

Temperature dependence of optical transitions in AlxGa1–xAs/GaAs quantum well structures grown by molecular beam epitaxy

Quantum well (QW) structures of Al_xGa_1–xAs/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl₂-etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 °C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Pässler model.     

High-temperature oxygen non-stoichiometry, conductivity and structure in strontium-rich nickelates La2−xSrxNiO4−δ (x = 1 and 1.4)

Oxygen non-stoichiometry, electrical conductivity and thermal expansion of La_2−xSr_xNiO_4−δ phases with high levels of strontium-substitution (1 ≤ x ≤ 1.4) have been investigated in air and oxygen atmosphere in the temperature range 20–1050 °C. These phases retain the K₂NiF₄-type structure of La₂NiO₄ (tetragonal, space group I4/mmm). The oxygen vacancy fraction was determined independently from thermogravimetric and neutron diffraction experiments, and is found to increase considerably on heating. The electrical resistivity, thermal expansion and cell parameters with temperature show peculiar variations with temperature, and differ notably from La₂NiO_4±δ in this respect. These variations are tentatively correlated with the evolution of nickel oxidation state, which crosses from a Ni³⁺/Ni⁴⁺ to a Ni²⁺/Ni³⁺ equilibrium on heating.     

Bond-lengths of the atomic nearest-neighbor and next-nearest-neighbor in A1−xBxC1−yDy III–V solid solutions

On the basis of the FDUC model and the hypothesis of the constant covalent radii, the expressions of the atomic nearest-neighbor and the next-nearest-neighbor bond-lengths were derived for A_1−xB_xC_1−yD_y III–V quaternary solid solutions. This set of bond-length expressions predicts the averaged bond-lengths and bond angles at any concentration (x, y) for the III–V pseudobinary and quaternary solid solutions, which are only dependent on the lattice parameters and the concentrations of the pure end compounds. When x=0, 1 or y=0, 1, A_1−xB_xC_1−yD_y III–V quaternary solid solutions degenerate into the relative pseudobinary solid solutions, in which the nearest-neighbor and the next-nearest-neighbor bond-lengths agree well with the experimental results. Further discussion and comparison with other theoretical models are also given in this paper.     

Photoelectrochemical investigations of n-CdSe1−xTex thin film electrodes

An electrode/electrolyte interface has been formed between an n-type CdSe_1−xTe_x (0≤x≤1) alloyed/mixed type semiconductor and a sulphide/polysulphide redox electrolyte. It has been investigated through the current–voltage, capacitance–voltage and spectrally selective properties. The dependence of the dark current through the junction and the junction capacitance on the voltage across the junction have been examined and analysed. It appeared that the current transport mechanism across the junction is strongly influenced by the recombination mechanism at the interface and series resistance effects. Upon illumination of the interface with a light of 20 mW cm⁻², an open circuit voltage of the order of 0.35 V and a short circuit current of 212 μA cm⁻² have been developed (for x=0.2), yielding an efficiency of energy conversion equal to 0.2% and a form factor of 45%. The action spectra in the 450–1000 nm wavelength range showed presence of the interface states at the electrode/electrolyte interface. The magnitudes of the barrier heights at the interfaces were also determined. It has been seen that a significant improvement in the electrochemical performance of a cell is noticed for the electrode composition with x=0.2.     

Strong magnetoelastic effect in Pr1−xCaxMnO3

Manganese oxides with distorted perovskite structure have attracted much attention during the last decade due to their colossal magnetoresistance (CMR), and the strong correlations among the various degrees of freedom involved. In particular, Pr_1−xCa_xMnO₃ compounds present in a wide Ca-doping range a charge ordering phenomenon, consisting of real space ordering of Mn³⁺ and Mn⁴⁺ in alternate lattice sites below a certain temperature T_CO. This ordering brings about a lattice distortion and a large hardening of the sound velocity below T_CO. Tomioka et al. have observed that an applied magnetic field can melt this charge ordered state and induce a transition from an insulating to a metallic state. In order to study the effects of this charge order melting, ultrasonic longitudinal sound velocity measurements were performed on polycrystalline Pr_1−xCa_xMnO₃ (x=0.35 and 0.5) as a function of magnetic field and temperature. Interesting anomalies were found related to the melting of the charge ordered phase into a metal-like state even at low temperatures.     

Photoconductors based on ZnxCd1−xS and CdSe1−ySy thin films, fabricated with multilayer structure

Photoconductors based on evaporated Zn_xCd_1−xS and CdSe_1−yS_y thin films, with a novel multilayer structure, were fabricated and characterized through spectral response measurements. The device structure is constituted by several layers of different energy gaps, sequentially deposited side by side and interconnected in series or in parallel. The influence of the preparation conditions, number of layers and electrode configuration, on the performance of the photoconductors was determined. Photoresistors with a detection range between 400 and 750 nm were developed, using four layers with energy gaps varying between 1.8 eV and 2.8 eV and interconnected in parallel.     

Magnetoresistance effect in thin films of Eu1−xSmxO on silicon

In the present study, the temperature-dependence of magnetic field effect on the resistance of films of oxides of rare earth elements (Gd, Eu, and Eu-Sm solid solution) prepared by vacuum thermal evaporation was considered and analyzed at approximately the Curie temperature. It was demonstrated that the temperature range of the effect, its sign and magnitude are determined by the dependence of the magnetic moment of magnetic clusters on both the external magnetic field strength and film parameters such as the spin of the magnetic ion, exchange energy, defect density, etc.     

Phase relations, lattice thermal expansion in Ce1−xEuxO2−x/2 and Ce1−xSmxO2−x/2 systems and stabilization of cubic RE2O3 (RE: Eu, Sm)

The phase relations in CeO₂–Eu₂O₃ and CeO₂–Sm₂O₃ systems have been established under slow-cooled conditions from 1400 °C. The two-phase relations differ as the CeO₂–Eu₂O₃ system showed only two monophasic phase fields, namely F-type cubic and C-type cubic, whereas CeO₂–Sm₂O₃ system showed three phase fields namely F-type cubic, C-type cubic and a biphasic field comprising of C-type cubic and monoclinic phase. An interesting observation of this investigation is the stabilization of C-type rare-earth oxide after Ce⁴⁺ substitution, which is attributed to decrease in average cationic size on Ce⁴⁺ substitution at RE³⁺ site. The lattice thermal expansion behavior of F-type solid solution and C-type solid solution in CeO₂–Eu₂O₃ system was investigated by high-temperature XRD.     

Combinatorial synthesis and rapid characterization of Mo1−xSnx (0x1) thin films

Thin films of Mo_1−xSn_x, continuously and linearly mapped for 0<x<1, have been prepared by d.c. magnetron sputter deposition under various growth conditions. X-ray diffraction results indicate that as x in high-pressure deposited Mo_1−xSn_x increases from 0 to approximately 0.45, the bcc lattice expands and no new phases are formed. At low deposition pressures, Mo₃Sn, a β-tungsten structured phase, is formed along with the bcc Mo–Sn solid solution for 0.1<x<0.3. The variation of the lattice parameter for this intermetallic phase also indicates that solid solutions, possibly of the form Mo_3+ySn, are being formed. These materials are of special interest as anode candidates in lithium-ion batteries.